MOSFET Puslaidininkiai

Rezultatai: 92
Pasirinkite Vaizdas Dalies Nr. Gam. Aprašymas Duomenų Lapas Prieinamumas Kainodara (EUR) Filtruokite lentelėje pateiktus rezultatus pagal vieneto kainą, remdamiesi kiekiu. Qty. RoHS
STMicroelectronics MOSFET moduliai N-channel 650 V, 0.012 Ohm typ., 143 A MDmesh M5 Power MOSFET in an ISOTOP packa 760Prieinamumas
Min.: 1
Daugkart.: 1

Microchip Technology APT50M50JFLL
Microchip Technology MOSFET moduliai FREDFET MOS 7 500 V 50 mOhm SOT-227 35Prieinamumas
Min.: 1
Daugkart.: 1

Microchip Technology APT80M60J
Microchip Technology MOSFET moduliai MOSFET MOS 8 600 V 80 A SOT-227 9Prieinamumas
Min.: 1
Daugkart.: 1

Advanced Linear Devices Kitos Kūrimo Priemonės 6-CHANNEL SAB PCB WITH ALD910027SALI 4Prieinamumas
Min.: 1
Daugkart.: 1
Infineon Technologies MOSFET moduliai EasyPACK 2C CoolSiC MOSFET M2 .XT, 3-level module 1200 V, 8 mOhm with NTC temperature sensor and high current PressFIT contact technology 33Prieinamumas
Min.: 1
Daugkart.: 1

Infineon Technologies MOSFET moduliai EasyPACK 2C CoolSiC MOSFET M2 .XT, 3-level module 1200 V, 8 mOhm with NTC temperature sensor, pre-applied thermal interface material 2.0 and high current PressFIT contact technology 16Prieinamumas
Min.: 1
Daugkart.: 1

Infineon Technologies MOSFET moduliai EasyPACK 1C CoolSiC MOSFET M2 .XT, fourpack module 1200 V, 13 mOhm with NTC temperature sensor and high current PressFIT contact technology 45Prieinamumas
Min.: 1
Daugkart.: 1

Infineon Technologies MOSFET moduliai EasyPACK 1C CoolSiC MOSFET M2 .XT, fourpack module 1200 V, 13 mOhm with NTC temperature sensor, pre-applied thermal interface material 2.0 and high current PressFIT contact technology 30Prieinamumas
Min.: 1
Daugkart.: 1

Infineon Technologies MOSFET moduliai EasyPACK 2C CoolSiC MOSFET M2 .XT, fourpack module 1200 V, 8 mOhm with NTC temperature sensor and high current PressFIT contact technology 23Prieinamumas
Min.: 1
Daugkart.: 1

Infineon Technologies MOSFET moduliai EasyPACK 2C CoolSiC MOSFET M2 .XT, fourpack module 1200 V, 8 mOhm with NTC temperature sensor, pre-applied thermal interface material 2.0 and high current PressFIT contact technology 33Prieinamumas
Min.: 1
Daugkart.: 1

Infineon Technologies MOSFET moduliai MEDIUM POWER 62MM 14Prieinamumas
Min.: 1
Daugkart.: 1

Infineon Technologies SiC MOSFET SILICON CARBIDE MOSFET 788Prieinamumas
Min.: 1
Daugkart.: 1
: 1 000

Infineon Technologies SiC MOSFET SILICON CARBIDE MOSFET 814Prieinamumas
Min.: 1
Daugkart.: 1
: 1 800

Infineon Technologies SiC MOSFET SILICON CARBIDE MOSFET 701Prieinamumas
Min.: 1
Daugkart.: 1
: 2 000

Infineon Technologies SiC MOSFET SILICON CARBIDE MOSFET 486Prieinamumas
Min.: 1
Daugkart.: 1


Coherent SiC MOSFET 1200V SIC Mosfet 20mOHm 200C Temp TO247-4 AEC-Q101 54Prieinamumas
Min.: 1
Daugkart.: 1

Infineon Technologies MOSFET moduliai MEDIUM POWER 62MM 6Prieinamumas
Min.: 1
Daugkart.: 1

Infineon Technologies SiC MOSFET SILICON CARBIDE MOSFET 101Prieinamumas
240Pagal užsakymą
Min.: 1
Daugkart.: 1

Microchip Technology SiC MOSFET MOSFET SIC 1200 V 80 mOhm TO-247-4 Notch 67Prieinamumas
Min.: 1
Daugkart.: 1

Microchip Technology MOSFET moduliai MOSFET MOS 7 500 V 38 mOhm SOT-227 300Prieinamumas
Min.: 1
Daugkart.: 1

Vishay Semiconductors MOSFET moduliai 200V, 3.3mOhm, 270A SOT-227 Pwr Mod 382Prieinamumas
Min.: 1
Daugkart.: 1

Vishay Semiconductors MOSFET moduliai 100V 435A Module SOT-227 713Prieinamumas
1 280Tikėtina 2026-10-09
Min.: 1
Daugkart.: 1

Infineon Technologies Kitos Kūrimo Priemonės 48V disconnect switch demo board with 80V OptiMOS 5 Dual Gate MOSFETs 3Prieinamumas
Min.: 1
Daugkart.: 1
Vishay Semiconductors MOSFET moduliai 150V, 1.93mOhm, 400A SOT-227 Pwr Mod 220Prieinamumas
160Tikėtina 2026-12-04
Min.: 1
Daugkart.: 1

Microchip Technology APT10M07JVFR
Microchip Technology MOSFET moduliai FREDFET MOS 5 100 V 7 mOhm SOT-227 36Prieinamumas
Min.: 1
Daugkart.: 1