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Igbt Moduliai IGBT Module 200A 1700V
- FF200R17KE4
- Infineon Technologies
-
1:
150,41 €
-
12Prieinamumas
-
20Tikėtina 2027-01-07
|
„Mouser“ Dalies Nr.
641-FF200R17KE4
|
Infineon Technologies
|
Igbt Moduliai IGBT Module 200A 1700V
|
|
12Prieinamumas
20Tikėtina 2027-01-07
|
|
Min.: 1
Daugkart.: 1
|
|
|
|
|
Lygintuvai 200V 30A TO-263 Fred Pt
- VS-30CTH02S-M3
- Vishay Semiconductors
-
1:
3,18 €
-
9 807Prieinamumas
|
„Mouser“ Dalies Nr.
78-VS-30CTH02S-M3
|
Vishay Semiconductors
|
Lygintuvai 200V 30A TO-263 Fred Pt
|
|
9 807Prieinamumas
|
|
Min.: 1
Daugkart.: 1
|
|
|
|
|
Lygintuvai 200V 20A TO-220 Fred Pt
- VS-MUR2020CT-M3
- Vishay Semiconductors
-
1:
0,783 €
-
8 466Prieinamumas
|
„Mouser“ Dalies Nr.
78-VS-MUR2020CT-M3
|
Vishay Semiconductors
|
Lygintuvai 200V 20A TO-220 Fred Pt
|
|
8 466Prieinamumas
|
|
Min.: 1
Daugkart.: 1
|
|
|
|
|
Igbt Moduliai IPM MODULE V1-SERIES
- PM400DV1A060#300G
- Mitsubishi Electric
-
Ribotas Prieinamumas
|
„Mouser“ Dalies Nr.
917-PM400DV1A060
|
Mitsubishi Electric
|
Igbt Moduliai IPM MODULE V1-SERIES
|
|
|
|
|
|
|
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Igbt Moduliai 1200 V, 600 A dual IGBT module
- FF600R12KE4PBOSA1
- Infineon Technologies
-
1:
180,15 €
-
61Prieinamumas
|
„Mouser“ Dalies Nr.
726-FF600R12KE4PBOSA
|
Infineon Technologies
|
Igbt Moduliai 1200 V, 600 A dual IGBT module
|
|
61Prieinamumas
|
|
Min.: 1
Daugkart.: 1
|
|
|
|
|
Lygintuvai RECT 800V 10A SM SUPER FST
- RFN10NS8DFHTL
- ROHM Semiconductor
-
1:
3,31 €
-
1 329Prieinamumas
|
„Mouser“ Dalies Nr.
755-RFN10NS8DFHTL
|
ROHM Semiconductor
|
Lygintuvai RECT 800V 10A SM SUPER FST
|
|
1 329Prieinamumas
|
|
Min.: 1
Daugkart.: 1
:
1 000
|
|
|
|
|
Igbt Moduliai 1200 V, 600 A common emitter IGBT module
- FF600R12KE7EHPSA1
- Infineon Technologies
-
1:
153,07 €
-
26Prieinamumas
|
„Mouser“ Dalies Nr.
726-FF600R12KE7EHPSA
|
Infineon Technologies
|
Igbt Moduliai 1200 V, 600 A common emitter IGBT module
|
|
26Prieinamumas
|
|
Min.: 1
Daugkart.: 1
|
|
|
|
|
Igbt Moduliai 1700 V, 1800 A dual IGBT module
- FF1800R17IP5
- Infineon Technologies
-
1:
1 189,72 €
-
2Prieinamumas
|
„Mouser“ Dalies Nr.
641-FF1800R17IP5
|
Infineon Technologies
|
Igbt Moduliai 1700 V, 1800 A dual IGBT module
|
|
2Prieinamumas
|
|
Min.: 1
Daugkart.: 1
|
|
|
|
|
SCHOTTKY Diodes ir Lygintuvai RECT 100V 10A SM SCHOTTKY
- V10KM100CHM3/H
- Vishay Semiconductors
-
1:
1,44 €
-
2 754Prieinamumas
|
„Mouser“ Dalies Nr.
78-V10KM100CHM3/H
|
Vishay Semiconductors
|
SCHOTTKY Diodes ir Lygintuvai RECT 100V 10A SM SCHOTTKY
|
|
2 754Prieinamumas
|
|
Min.: 1
Daugkart.: 1
:
1 500
|
|
|
|
|
Mažų signalų perjungimo diodai 75V 1A 200mA 3 Pin CER Signal or Computer Diode
- 1N4148UBD
- Microchip Technology
-
1:
21,96 €
-
1 933Prieinamumas
|
„Mouser“ Dalies Nr.
494-1N4148UBD
|
Microchip Technology
|
Mažų signalų perjungimo diodai 75V 1A 200mA 3 Pin CER Signal or Computer Diode
|
|
1 933Prieinamumas
|
|
Min.: 1
Daugkart.: 1
|
Ne
|
|
|
|
MOSFETs T6 40V LL S08FL DS
- NVMFD5C466NLT1G
- onsemi
-
1:
2,60 €
-
27 819Prieinamumas
-
NRND
|
„Mouser“ Dalies Nr.
863-NVMFD5C466NLT1G
NRND
|
onsemi
|
MOSFETs T6 40V LL S08FL DS
|
|
27 819Prieinamumas
|
|
Min.: 1
Daugkart.: 1
:
1 500
|
|
|
|
|
Lygintuvai RECT 800V 10A SM SUPER FST
- RFN10NS8DTL
- ROHM Semiconductor
-
1:
2,90 €
-
1 626Prieinamumas
|
„Mouser“ Dalies Nr.
755-RFN10NS8DTL
|
ROHM Semiconductor
|
Lygintuvai RECT 800V 10A SM SUPER FST
|
|
1 626Prieinamumas
|
|
Min.: 1
Daugkart.: 1
:
1 000
|
|
|
|
|
Lygintuvai Super Fast Recovery Diode
- RFN16T2DNZC9
- ROHM Semiconductor
-
1:
2,24 €
-
1 710Prieinamumas
|
„Mouser“ Dalies Nr.
755-RFN16T2DNZC9
|
ROHM Semiconductor
|
Lygintuvai Super Fast Recovery Diode
|
|
1 710Prieinamumas
|
|
Min.: 1
Daugkart.: 1
|
|
|
|
|
Mažų signalų perjungimo diodai 200V 6A ULTRAFAST DUAL DIODES
- RURD620CCS9A-F085
- onsemi
-
1:
1,49 €
-
4 432Prieinamumas
|
„Mouser“ Dalies Nr.
512-RURD620CCS9AF085
|
onsemi
|
Mažų signalų perjungimo diodai 200V 6A ULTRAFAST DUAL DIODES
|
|
4 432Prieinamumas
|
|
Min.: 1
Daugkart.: 1
Maks.: 2 500
:
2 500
|
|
|
|
|
MOSFETs 20V PCH NexFET Pwr M OSFET A 595-CSD7520 A 595-CSD75208W1015
- CSD75208W1015T
- Texas Instruments
-
1:
1,56 €
-
8 784Prieinamumas
|
„Mouser“ Dalies Nr.
595-CSD75208W1015T
|
Texas Instruments
|
MOSFETs 20V PCH NexFET Pwr M OSFET A 595-CSD7520 A 595-CSD75208W1015
|
|
8 784Prieinamumas
|
|
Min.: 1
Daugkart.: 1
:
250
|
|
|
|
|
MOSFETs 30V Vds 20V Vgs PowerPAIR 6 x 5F
- SIZF918DT-T1-GE3
- Vishay Semiconductors
-
1:
0,72 €
-
5 059Prieinamumas
|
„Mouser“ Dalies Nr.
78-SIZF918DT-T1-GE3
|
Vishay Semiconductors
|
MOSFETs 30V Vds 20V Vgs PowerPAIR 6 x 5F
|
|
5 059Prieinamumas
|
|
Min.: 1
Daugkart.: 1
:
3 000
|
|
|
|
|
Igbt Moduliai IGBT MODULE T-SERIES NX TYPE DUAL
- CM450DX-24T#110G
- Mitsubishi Electric
-
Ribotas Prieinamumas
|
„Mouser“ Dalies Nr.
917-CM450DX-24T
|
Mitsubishi Electric
|
Igbt Moduliai IGBT MODULE T-SERIES NX TYPE DUAL
|
|
|
|
|
|
|
|
|
MOSFETs 30-V N channel sync hronous buck NexFET A 595-CSD87335Q3D
- CSD87335Q3DT
- Texas Instruments
-
1:
2,62 €
-
8 140Prieinamumas
|
„Mouser“ Dalies Nr.
595-CSD87335Q3DT
|
Texas Instruments
|
MOSFETs 30-V N channel sync hronous buck NexFET A 595-CSD87335Q3D
|
|
8 140Prieinamumas
|
|
Min.: 1
Daugkart.: 1
:
250
|
|
|
|
|
Lygintuvai Output & SW Modules - SOT-227 FRED
- VS-UFB211FA40
- Vishay Semiconductors
-
1:
20,64 €
-
170Prieinamumas
|
„Mouser“ Dalies Nr.
78-VS-UFB211FA40
|
Vishay Semiconductors
|
Lygintuvai Output & SW Modules - SOT-227 FRED
|
|
170Prieinamumas
|
|
Min.: 1
Daugkart.: 1
|
|
|
|
|
MOSFETs MOSFET BVDSS: 25V-30V PowerDI3333-8 T&R 2K
- DMT26M0LDG-7
- Diodes Incorporated
-
1:
1,81 €
-
2 000Prieinamumas
|
„Mouser“ Dalies Nr.
621-DMT26M0LDG-7
|
Diodes Incorporated
|
MOSFETs MOSFET BVDSS: 25V-30V PowerDI3333-8 T&R 2K
|
|
2 000Prieinamumas
|
|
Min.: 1
Daugkart.: 1
:
2 000
|
|
|
|
|
MOSFETs N-Ch 30V 7.7A DSO-8 OptiMOS 3M
- BSO220N03MDGXUMA1
- Infineon Technologies
-
1:
1,08 €
-
54 985Prieinamumas
-
Netinkama eksploatuoti
|
„Mouser“ Dalies Nr.
726-BSO220N03MDGXUMA
Netinkama eksploatuoti
|
Infineon Technologies
|
MOSFETs N-Ch 30V 7.7A DSO-8 OptiMOS 3M
|
|
54 985Prieinamumas
|
|
Min.: 1
Daugkart.: 1
Maks.: 5 000
:
2 500
|
|
|
|
|
Lygintuvai THYR / DIODE MODULE DK
- DD600N16KXPSA1
- Infineon Technologies
-
1:
315,98 €
-
4Prieinamumas
-
22Tikėtina 2027-05-04
|
„Mouser“ Dalies Nr.
726-DD600N16KXPSA1
|
Infineon Technologies
|
Lygintuvai THYR / DIODE MODULE DK
|
|
4Prieinamumas
22Tikėtina 2027-05-04
|
|
Min.: 1
Daugkart.: 1
|
|
|
|
|
Igbt Moduliai IGBT MODULE T-SERIES STANDARD TYPE DUAL
- CM200DY-13T
- Mitsubishi Electric
-
Ribotas Prieinamumas
|
„Mouser“ Dalies Nr.
917-CM200DY-13T
|
Mitsubishi Electric
|
Igbt Moduliai IGBT MODULE T-SERIES STANDARD TYPE DUAL
|
|
|
|
|
|
|
|
|
MOSFETs BSS Family SOT563 T&R 3K
- DMP68D1LV-7
- Diodes Incorporated
-
1:
0,542 €
-
2 697Prieinamumas
-
3 000Tikėtina 2027-08-16
|
„Mouser“ Dalies Nr.
621-DMP68D1LV-7
|
Diodes Incorporated
|
MOSFETs BSS Family SOT563 T&R 3K
|
|
2 697Prieinamumas
3 000Tikėtina 2027-08-16
|
|
Min.: 1
Daugkart.: 1
:
3 000
|
|
|
|
|
MOSFETs 30-V N channel sync hronous buck NexFET A 595-CSD87335Q3DT
- CSD87335Q3D
- Texas Instruments
-
1:
2,06 €
-
3 509Prieinamumas
|
„Mouser“ Dalies Nr.
595-CSD87335Q3D
|
Texas Instruments
|
MOSFETs 30-V N channel sync hronous buck NexFET A 595-CSD87335Q3DT
|
|
3 509Prieinamumas
|
|
Min.: 1
Daugkart.: 1
:
2 500
|
|
|