|
|
SiC MOSFET CoolSiC 1200 V, 14 mohm SiC Trench MOSFET in TO247-3 package
- IMW120R014M1HXKSA1
- Infineon Technologies
-
1:
25,49 €
-
1 202Prieinamumas
-
NRND
|
„Mouser“ Dalies Nr.
726-IMW120R014M1HXKS
NRND
|
Infineon Technologies
|
SiC MOSFET CoolSiC 1200 V, 14 mohm SiC Trench MOSFET in TO247-3 package
|
|
1 202Prieinamumas
|
|
Min.: 1
Daugkart.: 1
|
|
SiC MOSFETS
|
|
Through Hole
|
|
N-Channel
|
|
|
|
SiC MOSFET SiC, MOSFET, 75m, 1200V, TO-247-4, 175C capable, Industrial
- C3M0075120K-A
- Wolfspeed
-
1:
8,18 €
-
670Prieinamumas
|
„Mouser“ Dalies Nr.
941-C3M0075120K-A
|
Wolfspeed
|
SiC MOSFET SiC, MOSFET, 75m, 1200V, TO-247-4, 175C capable, Industrial
|
|
670Prieinamumas
|
|
Min.: 1
Daugkart.: 1
|
|
SiC MOSFETS
|
|
Through Hole
|
TO-247-4
|
N-Channel
|
|
|
|
SiC MOSFET SiC, MOSFET, 40mohm, 1200V, TO-263-7XL, Industrial
- C3M0040120J1
- Wolfspeed
-
1:
11,16 €
-
661Prieinamumas
|
„Mouser“ Dalies Nr.
941-C3M0040120J1
|
Wolfspeed
|
SiC MOSFET SiC, MOSFET, 40mohm, 1200V, TO-263-7XL, Industrial
|
|
661Prieinamumas
|
|
Min.: 1
Daugkart.: 1
|
|
SiC MOSFETS
|
|
SMD/SMT
|
|
N-Channel
|
|
|
|
SiC MOSFET SiC, MOSFET 45mohm, 650V TO-263-7XL, Industrial
- C3M0045065J1
- Wolfspeed
-
1:
9,20 €
-
601Prieinamumas
|
„Mouser“ Dalies Nr.
941-C3M0045065J1
|
Wolfspeed
|
SiC MOSFET SiC, MOSFET 45mohm, 650V TO-263-7XL, Industrial
|
|
601Prieinamumas
|
|
Min.: 1
Daugkart.: 1
|
|
SiC MOSFETS
|
|
SMD/SMT
|
|
N-Channel
|
|
|
|
SiC MOSFET SILICON CARBIDE MOSFET
- IMBG65R163M1HXTMA1
- Infineon Technologies
-
1:
5,36 €
-
1 000Prieinamumas
-
NRND
|
„Mouser“ Dalies Nr.
726-IMBG65R163M1HXTM
NRND
|
Infineon Technologies
|
SiC MOSFET SILICON CARBIDE MOSFET
|
|
1 000Prieinamumas
|
|
Min.: 1
Daugkart.: 1
:
1 000
|
|
SiC MOSFETS
|
|
SMD/SMT
|
|
N-Channel
|
|
|
|
SiC MOSFET CoolSiC 1200 V, 40 mohm SiC Trench MOSFET in TO247-4 package
- IMZA120R040M1HXKSA1
- Infineon Technologies
-
1:
12,21 €
-
947Prieinamumas
-
NRND
|
„Mouser“ Dalies Nr.
726-IMZA120R040M1HXK
NRND
|
Infineon Technologies
|
SiC MOSFET CoolSiC 1200 V, 40 mohm SiC Trench MOSFET in TO247-4 package
|
|
947Prieinamumas
|
|
Min.: 1
Daugkart.: 1
|
|
SiC MOSFETS
|
|
Through Hole
|
TO-247-4
|
N-Channel
|
|
|
|
SiC MOSFET SILICON CARBIDE MOSFET
- IMBG65R022M1HXTMA1
- Infineon Technologies
-
1:
15,67 €
-
643Prieinamumas
-
NRND
|
„Mouser“ Dalies Nr.
726-IMBG65R022M1HXTM
NRND
|
Infineon Technologies
|
SiC MOSFET SILICON CARBIDE MOSFET
|
|
643Prieinamumas
|
|
Min.: 1
Daugkart.: 1
:
1 000
|
|
SiC MOSFETS
|
|
SMD/SMT
|
|
N-Channel
|
|
|
|
GaN FET LEGACY GAN SYSTEMS
- GS-065-011-1-L-MR
- Infineon Technologies
-
1:
4,96 €
-
2 437Prieinamumas
-
Netinkama eksploatuoti
|
„Mouser“ Dalies Nr.
499-GS-065-011-1-L
Netinkama eksploatuoti
|
Infineon Technologies
|
GaN FET LEGACY GAN SYSTEMS
|
|
2 437Prieinamumas
|
|
Min.: 1
Daugkart.: 1
:
250
|
|
GaN FETs
|
GaN-on-Si
|
SMD/SMT
|
PDFN-6
|
N-Channel
|
|
|
|
SiC MOSFET SILICON CARBIDE MOSFET
- IMBG65R057M1HXTMA1
- Infineon Technologies
-
1:
8,08 €
-
1 995Prieinamumas
-
NRND
|
„Mouser“ Dalies Nr.
726-IMBG65R057M1HXTM
NRND
|
Infineon Technologies
|
SiC MOSFET SILICON CARBIDE MOSFET
|
|
1 995Prieinamumas
|
|
Min.: 1
Daugkart.: 1
:
1 000
|
|
SiC MOSFETS
|
|
SMD/SMT
|
|
N-Channel
|
|
|
|
SiC MOSFET 1200V 12mohm TO-247-4 G3R SiC MOSFET
- G3R12MT12K
- GeneSiC Semiconductor
-
1:
55,91 €
-
1 674Prieinamumas
|
„Mouser“ Dalies Nr.
905-G3R12MT12K
|
GeneSiC Semiconductor
|
SiC MOSFET 1200V 12mohm TO-247-4 G3R SiC MOSFET
|
|
1 674Prieinamumas
|
|
Min.: 1
Daugkart.: 1
|
|
SiC MOSFETS
|
|
Through Hole
|
TO-247-4
|
N-Channel
|
|
|
|
SiC MOSFET 1700V Through-Hole MOSFET N-Channel SiC
- CDMS24740-170 SL PBFREE
- Central Semiconductor
-
1:
34,01 €
-
17Prieinamumas
-
Naujas Produktas
|
„Mouser“ Dalies Nr.
610-CDMS24740-170SL
Naujas Produktas
|
Central Semiconductor
|
SiC MOSFET 1700V Through-Hole MOSFET N-Channel SiC
|
|
17Prieinamumas
|
|
Min.: 1
Daugkart.: 1
|
|
SiC MOSFETS
|
|
Through Hole
|
TO-247-3
|
N-Channel
|
|
|
|
SiC MOSFET SiC, MOSFET, 40m, 1200V, TO-263-7XL T&R, Industrial
- C3M0040120J1-TR
- Wolfspeed
-
1:
11,16 €
-
644Prieinamumas
|
„Mouser“ Dalies Nr.
941-C3M0040120J1TR
|
Wolfspeed
|
SiC MOSFET SiC, MOSFET, 40m, 1200V, TO-263-7XL T&R, Industrial
|
|
644Prieinamumas
|
|
Min.: 1
Daugkart.: 1
:
800
|
|
SiC MOSFETS
|
|
SMD/SMT
|
|
N-Channel
|
|
|
|
SiC MOSFET SILICON CARBIDE MOSFET
- IMBG65R048M1HXTMA1
- Infineon Technologies
-
1:
8,72 €
-
1 019Prieinamumas
-
NRND
|
„Mouser“ Dalies Nr.
726-IMBG65R048M1HXTM
NRND
|
Infineon Technologies
|
SiC MOSFET SILICON CARBIDE MOSFET
|
|
1 019Prieinamumas
|
|
Min.: 1
Daugkart.: 1
:
1 000
|
|
SiC MOSFETS
|
|
SMD/SMT
|
|
N-Channel
|
|
|
|
SiC MOSFET SILICON CARBIDE MOSFET
- IMBG65R072M1HXTMA1
- Infineon Technologies
-
1:
6,64 €
-
861Prieinamumas
-
NRND
|
„Mouser“ Dalies Nr.
726-IMBG65R072M1HXTM
NRND
|
Infineon Technologies
|
SiC MOSFET SILICON CARBIDE MOSFET
|
|
861Prieinamumas
|
|
Min.: 1
Daugkart.: 1
:
1 000
|
|
SiC MOSFETS
|
|
SMD/SMT
|
|
N-Channel
|
|
|
|
SiC MOSFET SILICON CARBIDE MOSFET
- IMBG65R107M1HXTMA1
- Infineon Technologies
-
1:
5,80 €
-
753Prieinamumas
-
NRND
|
„Mouser“ Dalies Nr.
726-IMBG65R107M1HXTM
NRND
|
Infineon Technologies
|
SiC MOSFET SILICON CARBIDE MOSFET
|
|
753Prieinamumas
|
|
Min.: 1
Daugkart.: 1
:
1 000
|
|
SiC MOSFETS
|
|
SMD/SMT
|
|
N-Channel
|
|
|
|
SiC MOSFET CoolSiC MOSFET 650 V, 33 mohm G2
- IMZA65R033M2HXKSA1
- Infineon Technologies
-
1:
11,38 €
-
3 297Prieinamumas
-
240Tikėtina 2027-06-17
-
Naujas Produktas
|
„Mouser“ Dalies Nr.
726-IMZA65R033M2HXKS
Naujas Produktas
|
Infineon Technologies
|
SiC MOSFET CoolSiC MOSFET 650 V, 33 mohm G2
|
|
3 297Prieinamumas
240Tikėtina 2027-06-17
|
|
Min.: 1
Daugkart.: 1
|
|
SiC MOSFETS
|
|
Through Hole
|
TO-247-4
|
N-Channel
|
|
|
|
SiC MOSFET TO263 1.2KV 75A N-CH SIC
- SCT4018KWATL
- ROHM Semiconductor
-
1:
23,99 €
-
994Prieinamumas
-
Naujas Produktas
|
„Mouser“ Dalies Nr.
755-SCT4018KWATL
Naujas Produktas
|
ROHM Semiconductor
|
SiC MOSFET TO263 1.2KV 75A N-CH SIC
|
|
994Prieinamumas
|
|
Min.: 1
Daugkart.: 1
:
1 000
|
|
SiC MOSFETS
|
|
SMD/SMT
|
TO-263-7LA
|
|
|
|
|
SiC MOSFET Gen3 1200V, 20mohm SiC MOSFET, TO-247-4L
- GP3T020A120H
- SemiQ
-
1:
10,82 €
-
391Prieinamumas
-
Naujas Produktas
|
„Mouser“ Dalies Nr.
148-GP3T020A120H
Naujas Produktas
|
SemiQ
|
SiC MOSFET Gen3 1200V, 20mohm SiC MOSFET, TO-247-4L
|
|
391Prieinamumas
|
|
Min.: 1
Daugkart.: 1
|
|
SiC MOSFETS
|
|
Through Hole
|
TO-247-4L
|
N-Channel
|
|
|
|
SiC MOSFET SiC, MOSFET, 900m, 1700V, TO-263-7 T&R, Industrial
- C3M0900170J-TR
- Wolfspeed
-
1:
5,10 €
-
2 444Prieinamumas
-
Naujas Produktas
|
„Mouser“ Dalies Nr.
941-C3M0900170J-TR
Naujas Produktas
|
Wolfspeed
|
SiC MOSFET SiC, MOSFET, 900m, 1700V, TO-263-7 T&R, Industrial
|
|
2 444Prieinamumas
|
|
Min.: 1
Daugkart.: 1
:
800
|
|
SiC MOSFETS
|
|
SMD/SMT
|
TO-263-7
|
N-Channel
|
|
|
|
SiC MOSFET CoolSiC MOSFET discrete 1200 V G2 in top-side cooled Q-DPAK package
- IMCQ120R026M2HXTMA1
- Infineon Technologies
-
1:
12,32 €
-
1 710Prieinamumas
-
Naujas Produktas
|
„Mouser“ Dalies Nr.
726-IMCQ120R026M2HXT
Naujas Produktas
|
Infineon Technologies
|
SiC MOSFET CoolSiC MOSFET discrete 1200 V G2 in top-side cooled Q-DPAK package
|
|
1 710Prieinamumas
|
|
Min.: 1
Daugkart.: 1
:
750
|
|
SiC MOSFETS
|
|
SMD/SMT
|
PG-HDSOP-22-U03
|
N-Channel
|
|
|
|
SiC MOSFET CoolSiC MOSFET discrete 1200 V G2 in top-side cooled Q-DPAK package
- IMCQ120R034M2HXTMA1
- Infineon Technologies
-
1:
10,35 €
-
1 081Prieinamumas
-
750Tikėtina 2027-05-20
-
Naujas Produktas
|
„Mouser“ Dalies Nr.
726-IMCQ120R034M2HXT
Naujas Produktas
|
Infineon Technologies
|
SiC MOSFET CoolSiC MOSFET discrete 1200 V G2 in top-side cooled Q-DPAK package
|
|
1 081Prieinamumas
750Tikėtina 2027-05-20
|
|
Min.: 1
Daugkart.: 1
:
750
|
|
SiC MOSFETS
|
|
SMD/SMT
|
PG-HDSOP-22-U03
|
N-Channel
|
|
|
|
SiC MOSFET CoolSiC MOSFET discrete 1200 V G2 in top-side cooled Q-DPAK package
- IMCQ120R040M2HXTMA1
- Infineon Technologies
-
1:
9,69 €
-
911Prieinamumas
-
Naujas Produktas
|
„Mouser“ Dalies Nr.
726-IMCQ120R040M2HXT
Naujas Produktas
|
Infineon Technologies
|
SiC MOSFET CoolSiC MOSFET discrete 1200 V G2 in top-side cooled Q-DPAK package
|
|
911Prieinamumas
|
|
Min.: 1
Daugkart.: 1
:
750
|
|
SiC MOSFETS
|
|
SMD/SMT
|
PG-HDSOP-22-U03
|
N-Channel
|
|
|
|
SiC MOSFET CoolSiC MOSFET discrete 1200 V G2 in top-side cooled Q-DPAK package
- IMCQ120R078M2HXTMA1
- Infineon Technologies
-
1:
7,38 €
-
2 299Prieinamumas
-
Naujas Produktas
|
„Mouser“ Dalies Nr.
726-IMCQ120R078M2HXT
Naujas Produktas
|
Infineon Technologies
|
SiC MOSFET CoolSiC MOSFET discrete 1200 V G2 in top-side cooled Q-DPAK package
|
|
2 299Prieinamumas
|
|
Min.: 1
Daugkart.: 1
:
750
|
|
SiC MOSFETS
|
|
SMD/SMT
|
PG-HDSOP-22-U03
|
N-Channel
|
|
|
|
SiC MOSFET Leverages switching performance while enabling the benefits of top-side cooling
- IMLT65R033M2HXTMA1
- Infineon Technologies
-
1:
9,80 €
-
909Prieinamumas
-
1 800Tikėtina 2027-06-03
-
Naujas Produktas
|
„Mouser“ Dalies Nr.
726-IMLT65R033M2HXTM
Naujas Produktas
|
Infineon Technologies
|
SiC MOSFET Leverages switching performance while enabling the benefits of top-side cooling
|
|
909Prieinamumas
1 800Tikėtina 2027-06-03
|
|
Min.: 1
Daugkart.: 1
:
1 800
|
|
SiC MOSFETS
|
|
SMD/SMT
|
|
N-Channel
|
|
|
|
SiC MOSFET CoolSiC MOSFET 650 V, 10 mohm G2
- IMW65R010M2HXKSA1
- Infineon Technologies
-
1:
22,16 €
-
191Prieinamumas
-
240Tikėtina 2026-10-22
-
Naujas Produktas
|
„Mouser“ Dalies Nr.
726-IMW65R010M2HXKSA
Naujas Produktas
|
Infineon Technologies
|
SiC MOSFET CoolSiC MOSFET 650 V, 10 mohm G2
|
|
191Prieinamumas
240Tikėtina 2026-10-22
|
|
Min.: 1
Daugkart.: 1
|
|
SiC MOSFETS
|
|
Through Hole
|
TO-247-3
|
N-Channel
|
|