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|
MOSFETs N-CHANNEL DEPLETION MODE
- DN2625DK6-G
- Microchip Technology
-
1:
2,41 €
-
20 063Prieinamumas
|
„Mouser“ Dalies Nr.
689-DN2625DK6-G
|
Microchip Technology
|
MOSFETs N-CHANNEL DEPLETION MODE
|
|
20 063Prieinamumas
|
|
Min.: 1
Daugkart.: 1
|
|
|
|
|
MOSFETs 30V Vds 20V Vgs PowerPAK 1212-8
- SISA88DN-T1-GE3
- Vishay / Siliconix
-
1:
0,843 €
-
203 292Prieinamumas
|
„Mouser“ Dalies Nr.
78-SISA88DN-T1-GE3
|
Vishay / Siliconix
|
MOSFETs 30V Vds 20V Vgs PowerPAK 1212-8
|
|
203 292Prieinamumas
|
|
Min.: 1
Daugkart.: 1
Maks.: 6 000
:
3 000
|
|
|
|
|
MOSFETs 40V Vds 20V Vgs PowerPAK SO-8
- SIR470DP-T1-GE3
- Vishay Semiconductors
-
1:
3,23 €
-
23 648Prieinamumas
|
„Mouser“ Dalies Nr.
781-SIR470DP-T1-GE3
|
Vishay Semiconductors
|
MOSFETs 40V Vds 20V Vgs PowerPAK SO-8
|
|
23 648Prieinamumas
|
|
Min.: 1
Daugkart.: 1
:
3 000
|
|
|
|
|
Operaciniai Stiprintuvai - Optiniai Stiprintuvai IC, Linear, Comparators, 2CH, Ground Sense, +3.0 36.0V, 8-Pin
- LM2904EYFVM-CTR
- ROHM Semiconductor
-
1:
1,14 €
-
5 145Prieinamumas
|
„Mouser“ Dalies Nr.
755-LM2904EYFVM-CTR
|
ROHM Semiconductor
|
Operaciniai Stiprintuvai - Optiniai Stiprintuvai IC, Linear, Comparators, 2CH, Ground Sense, +3.0 36.0V, 8-Pin
|
|
5 145Prieinamumas
|
|
Min.: 1
Daugkart.: 1
:
3 000
|
|
|
|
|
SCHOTTKY Diodes ir Lygintuvai Schottky Barrier Diode (AEC-Q101 Qualified)
- RB238T150HZC9
- ROHM Semiconductor
-
1:
4,15 €
-
1 800Prieinamumas
|
„Mouser“ Dalies Nr.
755-RB238T150HZC9
|
ROHM Semiconductor
|
SCHOTTKY Diodes ir Lygintuvai Schottky Barrier Diode (AEC-Q101 Qualified)
|
|
1 800Prieinamumas
|
|
Min.: 1
Daugkart.: 1
|
|
|
|
|
MOSFETs 30V NCh PowerTrench MOSFET
- FDMS7694
- onsemi
-
1:
0,92 €
-
164 623Prieinamumas
|
„Mouser“ Dalies Nr.
512-FDMS7694
|
onsemi
|
MOSFETs 30V NCh PowerTrench MOSFET
|
|
164 623Prieinamumas
|
|
Min.: 1
Daugkart.: 1
:
3 000
|
|
|
|
|
Gate Tvarkyklės 2A HS Inverting
- TPS2818DBVR
- Texas Instruments
-
1:
2,49 €
-
16 958Prieinamumas
|
„Mouser“ Dalies Nr.
595-TPS2818DBVR
|
Texas Instruments
|
Gate Tvarkyklės 2A HS Inverting
|
|
16 958Prieinamumas
|
|
Min.: 1
Daugkart.: 1
:
3 000
|
|
|
|
|
Gate Tvarkyklės 4A/4A Sgl Ch Hi-Spd Lo-side Gate Drvr A A 595-UCC27516DRSR
- UCC27516DRST
- Texas Instruments
-
1:
0,955 €
-
42 586Prieinamumas
|
„Mouser“ Dalies Nr.
595-UCC27516DRST
|
Texas Instruments
|
Gate Tvarkyklės 4A/4A Sgl Ch Hi-Spd Lo-side Gate Drvr A A 595-UCC27516DRSR
|
|
42 586Prieinamumas
|
|
Min.: 1
Daugkart.: 1
:
250
|
|
|
|
|
MOSFETs DIFFERENTIATED MOSFETS
- IPB024N10N5ATMA1
- Infineon Technologies
-
1:
4,46 €
-
41 698Prieinamumas
|
„Mouser“ Dalies Nr.
726-IPB024N10N5ATMA1
|
Infineon Technologies
|
MOSFETs DIFFERENTIATED MOSFETS
|
|
41 698Prieinamumas
|
|
Min.: 1
Daugkart.: 1
:
1 000
|
|
|
|
|
MOSFETs 30V Vds 20V Vgs TSOP-6
- SI3424CDV-T1-GE3
- Vishay Semiconductors
-
1:
0,602 €
-
347 967Prieinamumas
|
„Mouser“ Dalies Nr.
78-SI3424CDV-T1-GE3
|
Vishay Semiconductors
|
MOSFETs 30V Vds 20V Vgs TSOP-6
|
|
347 967Prieinamumas
|
|
Min.: 1
Daugkart.: 1
:
3 000
|
|
|
|
|
MOSFETs 650V Vds; 30V Vgs TO-220AB
- SIHP100N60E-GE3
- Vishay Semiconductors
-
1:
4,69 €
-
11 728Prieinamumas
|
„Mouser“ Dalies Nr.
78-SIHP100N60E-GE3
|
Vishay Semiconductors
|
MOSFETs 650V Vds; 30V Vgs TO-220AB
|
|
11 728Prieinamumas
|
|
Min.: 1
Daugkart.: 1
|
|
|
|
|
MOSFETs -60V Vds 20V Vgs SO-8
- SI4948BEY-T1-E3
- Vishay Semiconductors
-
1:
1,56 €
-
68 326Prieinamumas
|
„Mouser“ Dalies Nr.
781-SI4948BEY-T1-E3
|
Vishay Semiconductors
|
MOSFETs -60V Vds 20V Vgs SO-8
|
|
68 326Prieinamumas
|
|
Min.: 1
Daugkart.: 1
:
2 500
|
|
|
|
|
MOSFETs -200V Vds 20V Vgs PowerPAK 1212-8
- SI7119DN-T1-GE3
- Vishay Semiconductors
-
1:
1,41 €
-
87 215Prieinamumas
|
„Mouser“ Dalies Nr.
781-SI7119DN-GE3
|
Vishay Semiconductors
|
MOSFETs -200V Vds 20V Vgs PowerPAK 1212-8
|
|
87 215Prieinamumas
|
|
Min.: 1
Daugkart.: 1
:
3 000
|
|
|
|
|
Gate Tvarkyklės Tiny 7A MOSFET Gate Dvr A 926-LM5112MYX/ A 926-LM5112MYX/NOPB
- LM5112MY/NOPB
- Texas Instruments
-
1:
1,54 €
-
15 992Prieinamumas
|
„Mouser“ Dalies Nr.
926-LM5112MY/NOPB
|
Texas Instruments
|
Gate Tvarkyklės Tiny 7A MOSFET Gate Dvr A 926-LM5112MYX/ A 926-LM5112MYX/NOPB
|
|
15 992Prieinamumas
|
|
Min.: 1
Daugkart.: 1
:
1 000
|
|
|
|
|
SCHOTTKY Diodes ir Lygintuvai 100V 5A, TO-252, Ultra low IR SBD: RB078BM10SFNS is a ultra low IR schottky barrier diode, suitable for Switching power supply.
- RB078BM10SFNSTL
- ROHM Semiconductor
-
1:
2,06 €
-
2 424Prieinamumas
|
„Mouser“ Dalies Nr.
755-RB078BM10SFNSTL
|
ROHM Semiconductor
|
SCHOTTKY Diodes ir Lygintuvai 100V 5A, TO-252, Ultra low IR SBD: RB078BM10SFNS is a ultra low IR schottky barrier diode, suitable for Switching power supply.
|
|
2 424Prieinamumas
|
|
Min.: 1
Daugkart.: 1
:
2 500
|
|
|
|
|
SCHOTTKY Diodes ir Lygintuvai Schottky Barrier Diode (AEC-Q101 Qualified)
- RB088T-30HZC9
- ROHM Semiconductor
-
1:
2,07 €
-
1 996Prieinamumas
|
„Mouser“ Dalies Nr.
755-RB088T-30HZC9
|
ROHM Semiconductor
|
SCHOTTKY Diodes ir Lygintuvai Schottky Barrier Diode (AEC-Q101 Qualified)
|
|
1 996Prieinamumas
|
|
Min.: 1
Daugkart.: 1
|
|
|
|
|
SCHOTTKY Diodes ir Lygintuvai Schottky Barrier Diode (AEC-Q101 Qualified)
- RB088T-60HZC9
- ROHM Semiconductor
-
1:
2,18 €
-
1 982Prieinamumas
|
„Mouser“ Dalies Nr.
755-RB088T-60HZC9
|
ROHM Semiconductor
|
SCHOTTKY Diodes ir Lygintuvai Schottky Barrier Diode (AEC-Q101 Qualified)
|
|
1 982Prieinamumas
|
|
Min.: 1
Daugkart.: 1
|
|
|
|
|
SCHOTTKY Diodes ir Lygintuvai Schottky Barrier Diode (AEC-Q101 Qualified)
- RB095T-90HZC9
- ROHM Semiconductor
-
1:
2,31 €
-
1 989Prieinamumas
|
„Mouser“ Dalies Nr.
755-RB095T-90HZC9
|
ROHM Semiconductor
|
SCHOTTKY Diodes ir Lygintuvai Schottky Barrier Diode (AEC-Q101 Qualified)
|
|
1 989Prieinamumas
|
|
Min.: 1
Daugkart.: 1
|
|
|
|
|
SCHOTTKY Diodes ir Lygintuvai Automotive Schottky Barrier Diode (AEC-Q101 Qualified)
- RBQ30TB45BHZC9
- ROHM Semiconductor
-
1:
3,11 €
-
1 225Prieinamumas
|
„Mouser“ Dalies Nr.
755-RBQ30TB45BHZC9
|
ROHM Semiconductor
|
SCHOTTKY Diodes ir Lygintuvai Automotive Schottky Barrier Diode (AEC-Q101 Qualified)
|
|
1 225Prieinamumas
|
|
Min.: 1
Daugkart.: 1
|
|
|
|
|
Operaciniai Stiprintuvai - Optiniai Stiprintuvai High EMC Performance, Single Supply, Operational Amplifier
- NJM2902BVB4T1-TE1
- Nisshinbo
-
1:
1,63 €
-
1 932Prieinamumas
|
„Mouser“ Dalies Nr.
848-NJM2902BVB4T1TE1
|
Nisshinbo
|
Operaciniai Stiprintuvai - Optiniai Stiprintuvai High EMC Performance, Single Supply, Operational Amplifier
|
|
1 932Prieinamumas
|
|
Min.: 1
Daugkart.: 1
:
2 000
|
|
|
|
|
SCHOTTKY Diodes ir Lygintuvai 150V, Schottky, TO-277C, 5A
- MBR5H150PC-AU_R2_007A1
- Panjit
-
1:
0,576 €
-
9 948Prieinamumas
|
„Mouser“ Dalies Nr.
241-MBR5H150PCAUR27A
|
Panjit
|
SCHOTTKY Diodes ir Lygintuvai 150V, Schottky, TO-277C, 5A
|
|
9 948Prieinamumas
|
|
Min.: 1
Daugkart.: 1
:
5 000
|
|
|
|
|
MOSFETs IFX FET 60V
- IPF016N06NF2SATMA1
- Infineon Technologies
-
1:
4,86 €
-
5 751Prieinamumas
|
„Mouser“ Dalies Nr.
726-IPF016N06NF2SATM
|
Infineon Technologies
|
MOSFETs IFX FET 60V
|
|
5 751Prieinamumas
|
|
Min.: 1
Daugkart.: 1
:
800
|
|
|
|
|
SCHOTTKY Diodes ir Lygintuvai Schottky Barrier Diode (AEC-Q101 Qualified)
- RB088T150HZC9
- ROHM Semiconductor
-
1:
2,43 €
-
1 961Prieinamumas
|
„Mouser“ Dalies Nr.
755-RB088T150HZC9
|
ROHM Semiconductor
|
SCHOTTKY Diodes ir Lygintuvai Schottky Barrier Diode (AEC-Q101 Qualified)
|
|
1 961Prieinamumas
|
|
Min.: 1
Daugkart.: 1
|
|
|
|
|
SCHOTTKY Diodes ir Lygintuvai Schottky Barrier Diode (AEC-Q101 Qualified)
- RB095T-40HZC9
- ROHM Semiconductor
-
1:
2,22 €
-
1 910Prieinamumas
|
„Mouser“ Dalies Nr.
755-RB095T-40HZC9
|
ROHM Semiconductor
|
SCHOTTKY Diodes ir Lygintuvai Schottky Barrier Diode (AEC-Q101 Qualified)
|
|
1 910Prieinamumas
|
|
Min.: 1
Daugkart.: 1
|
|
|
|
|
RD siųstuvas-imtuvas 2.4GHz, Zigbee Transceiver
- AT86RF231-ZUR
- Microchip Technology
-
1:
3,43 €
-
3 343Prieinamumas
|
„Mouser“ Dalies Nr.
556-AT86RF231-ZUR
|
Microchip Technology
|
RD siųstuvas-imtuvas 2.4GHz, Zigbee Transceiver
|
|
3 343Prieinamumas
|
|
Min.: 1
Daugkart.: 1
:
5 000
|
|
|