|
|
SCHOTTKY Diodes ir Lygintuvai 20A, 200V, SlimDPAK, DUAL TMBS RECT
- V20PW22CHM3_A/I
- Vishay
-
1:
2,72 €
-
4 435Prieinamumas
|
„Mouser“ Dalies Nr.
78-V20PW22CHM3_A/I
|
Vishay
|
SCHOTTKY Diodes ir Lygintuvai 20A, 200V, SlimDPAK, DUAL TMBS RECT
|
|
4 435Prieinamumas
|
|
Min.: 1
Daugkart.: 1
:
4 500
|
|
|
|
|
Igbt Moduliai 50A 600V IGBT MTP PWR MODULE
- VS-50MT060TFT
- Vishay
-
1:
51,43 €
-
105Prieinamumas
|
„Mouser“ Dalies Nr.
78-VS-50MT060TFT
|
Vishay
|
Igbt Moduliai 50A 600V IGBT MTP PWR MODULE
|
|
105Prieinamumas
|
|
Min.: 1
Daugkart.: 1
:
15
|
|
|
|
|
RD sistema luste – SoC FG23, Sub-GHz, 512kB Flash, 64kB RAM, +20 dBm, Secure Vault-High, +125C, QFN48
- EFR32FG23B020F512IM48-C
- Silicon Labs
-
1:
6,05 €
-
7 350Prieinamumas
-
4 900Tikėtina 2026-10-27
|
„Mouser“ Dalies Nr.
634-FG23B20F512IM48C
|
Silicon Labs
|
RD sistema luste – SoC FG23, Sub-GHz, 512kB Flash, 64kB RAM, +20 dBm, Secure Vault-High, +125C, QFN48
|
|
7 350Prieinamumas
4 900Tikėtina 2026-10-27
|
|
Min.: 1
Daugkart.: 1
|
|
|
|
|
SCHOTTKY Diodes ir Lygintuvai Schottky Barrier Diode (AEC-Q101 Qualified)
- RB225T-40HZC9
- ROHM Semiconductor
-
1:
3,28 €
-
1 939Prieinamumas
|
„Mouser“ Dalies Nr.
755-RB225T-40HZC9
|
ROHM Semiconductor
|
SCHOTTKY Diodes ir Lygintuvai Schottky Barrier Diode (AEC-Q101 Qualified)
|
|
1 939Prieinamumas
|
|
Min.: 1
Daugkart.: 1
|
|
|
|
|
SCHOTTKY Diodes ir Lygintuvai RECT 200V 15A SM TMBS
- V15P22-M3/H
- Vishay Semiconductors
-
1:
2,07 €
-
3 821Prieinamumas
|
„Mouser“ Dalies Nr.
78-V15P22-M3/H
|
Vishay Semiconductors
|
SCHOTTKY Diodes ir Lygintuvai RECT 200V 15A SM TMBS
|
|
3 821Prieinamumas
|
|
Min.: 1
Daugkart.: 1
:
1 500
|
|
|
|
|
SCHOTTKY Diodes ir Lygintuvai RECT 100V 30A SM SCHOTTKY
- V30KM100HM3/H
- Vishay Semiconductors
-
1:
2,01 €
-
8 138Prieinamumas
|
„Mouser“ Dalies Nr.
78-V30KM100HM3/H
|
Vishay Semiconductors
|
SCHOTTKY Diodes ir Lygintuvai RECT 100V 30A SM SCHOTTKY
|
|
8 138Prieinamumas
|
|
Min.: 1
Daugkart.: 1
:
1 500
|
|
|
|
|
SCHOTTKY Diodes ir Lygintuvai 120V, Schottky, TO-277C, 15A
- MBR15H120PC-AU_R2_007A1
- Panjit
-
1:
0,783 €
-
8 205Prieinamumas
|
„Mouser“ Dalies Nr.
241-MBR15H120PCAR27A
|
Panjit
|
SCHOTTKY Diodes ir Lygintuvai 120V, Schottky, TO-277C, 15A
|
|
8 205Prieinamumas
|
|
Min.: 1
Daugkart.: 1
:
5 000
|
|
|
|
|
SCHOTTKY Diodes ir Lygintuvai Schottky Barrier Diode (AEC-Q101 Qualified)
- RB085T-90HZC9
- ROHM Semiconductor
-
1:
2,31 €
-
1 880Prieinamumas
|
„Mouser“ Dalies Nr.
755-RB085T-90HZC9
|
ROHM Semiconductor
|
SCHOTTKY Diodes ir Lygintuvai Schottky Barrier Diode (AEC-Q101 Qualified)
|
|
1 880Prieinamumas
|
|
Min.: 1
Daugkart.: 1
|
|
|
|
|
SCHOTTKY Diodes ir Lygintuvai Schottky Barrier Diode (AEC-Q101 Qualified)
- RB228T150HZC9
- ROHM Semiconductor
-
1:
3,33 €
-
1 965Prieinamumas
|
„Mouser“ Dalies Nr.
755-RB228T150HZC9
|
ROHM Semiconductor
|
SCHOTTKY Diodes ir Lygintuvai Schottky Barrier Diode (AEC-Q101 Qualified)
|
|
1 965Prieinamumas
|
|
Min.: 1
Daugkart.: 1
|
|
|
|
|
SCHOTTKY Diodes ir Lygintuvai Schottky Barrier Diode (AEC-Q101 Qualified)
- RB238T-60HZC9
- ROHM Semiconductor
-
1:
3,40 €
-
1 692Prieinamumas
|
„Mouser“ Dalies Nr.
755-RB238T-60HZC9
|
ROHM Semiconductor
|
SCHOTTKY Diodes ir Lygintuvai Schottky Barrier Diode (AEC-Q101 Qualified)
|
|
1 692Prieinamumas
|
|
Min.: 1
Daugkart.: 1
|
|
|
|
|
SCHOTTKY Diodes ir Lygintuvai RECT 200V 3A SM SKY BARRI
- RSX058BM2SFHTL
- ROHM Semiconductor
-
1:
1,57 €
-
4 845Prieinamumas
|
„Mouser“ Dalies Nr.
755-RSX058BM2SFHTL
|
ROHM Semiconductor
|
SCHOTTKY Diodes ir Lygintuvai RECT 200V 3A SM SKY BARRI
|
|
4 845Prieinamumas
|
|
Min.: 1
Daugkart.: 1
:
2 500
|
|
|
|
|
SCHOTTKY Diodes ir Lygintuvai RECT 200V 5A SM SKY BARRI
- RSX078BM2SFHTL
- ROHM Semiconductor
-
1:
1,62 €
-
4 144Prieinamumas
|
„Mouser“ Dalies Nr.
755-RSX078BM2SFHTL
|
ROHM Semiconductor
|
SCHOTTKY Diodes ir Lygintuvai RECT 200V 5A SM SKY BARRI
|
|
4 144Prieinamumas
|
|
Min.: 1
Daugkart.: 1
:
2 500
|
|
|
|
|
MOSFETs S-TOGL N-CH 40V 160A
- XPJ1R004PB,LXHQ
- Toshiba
-
1:
2,92 €
-
2 404Prieinamumas
|
„Mouser“ Dalies Nr.
757-XPJ1R004PBLXHQ
|
Toshiba
|
MOSFETs S-TOGL N-CH 40V 160A
|
|
2 404Prieinamumas
|
|
Min.: 1
Daugkart.: 1
:
1 500
|
|
|
|
|
SCHOTTKY Diodes ir Lygintuvai RECT 45V 30A SM SCHOTTKY
- V30KM45-M3/H
- Vishay Semiconductors
-
1:
1,82 €
-
4 350Prieinamumas
|
„Mouser“ Dalies Nr.
78-V30KM45-M3/H
|
Vishay Semiconductors
|
SCHOTTKY Diodes ir Lygintuvai RECT 45V 30A SM SCHOTTKY
|
|
4 350Prieinamumas
|
|
Min.: 1
Daugkart.: 1
:
1 500
|
|
|
|
|
Didelio Greičio Operaciniai Stiprintuvai Ultra-Wideband Curre nt Feedback A 595-O A 595-OPA695ID
- OPA695IDR
- Texas Instruments
-
1:
4,79 €
-
5 024Prieinamumas
|
„Mouser“ Dalies Nr.
595-OPA695IDR
|
Texas Instruments
|
Didelio Greičio Operaciniai Stiprintuvai Ultra-Wideband Curre nt Feedback A 595-O A 595-OPA695ID
|
|
5 024Prieinamumas
|
|
Min.: 1
Daugkart.: 1
:
2 500
|
|
|
|
|
RD sistema luste – SoC Mighty Gecko, QFN32, 2.4G, 6dB, Mesh, 512kB, 32kB(RAM), 18 GPIO
- EFR32MG22C224F512IM32-CR
- Silicon Labs
-
1:
3,90 €
-
18 665Prieinamumas
|
„Mouser“ Dalies Nr.
634-ER32MG22512IM3CR
|
Silicon Labs
|
RD sistema luste – SoC Mighty Gecko, QFN32, 2.4G, 6dB, Mesh, 512kB, 32kB(RAM), 18 GPIO
|
|
18 665Prieinamumas
|
|
Min.: 1
Daugkart.: 1
:
2 500
|
|
|
|
|
RD siųstuvas-imtuvas +13/-116 dBm sub-GHz transceiver
- SI4455-C2A-GMR
- Silicon Labs
-
1:
5,09 €
-
38 006Prieinamumas
|
„Mouser“ Dalies Nr.
634-SI4455-C2A-GMR
|
Silicon Labs
|
RD siųstuvas-imtuvas +13/-116 dBm sub-GHz transceiver
|
|
38 006Prieinamumas
|
|
Min.: 1
Daugkart.: 1
:
2 500
|
|
|
|
|
MOSFETs N-CHANNEL 100+
- IPB120N10S405ATMA1
- Infineon Technologies
-
1:
3,62 €
-
14 041Prieinamumas
|
„Mouser“ Dalies Nr.
726-IPB120N10S405ATM
|
Infineon Technologies
|
MOSFETs N-CHANNEL 100+
|
|
14 041Prieinamumas
|
|
Min.: 1
Daugkart.: 1
:
1 000
|
|
|
|
|
MOSFETs N-Ch 75V 30A DPAK-2 OptiMOS
- IPD30N08S2L21ATMA1
- Infineon Technologies
-
1:
2,30 €
-
36 563Prieinamumas
|
„Mouser“ Dalies Nr.
726-IPD30N08S2L21ATM
|
Infineon Technologies
|
MOSFETs N-Ch 75V 30A DPAK-2 OptiMOS
|
|
36 563Prieinamumas
|
|
Min.: 1
Daugkart.: 1
:
2 500
|
|
|
|
|
MOSFETs -20V Vds 12V Vgs PowerPAK SC-70
- SIA459EDJ-T1-GE3
- Vishay / Siliconix
-
1:
0,783 €
-
105 509Prieinamumas
|
„Mouser“ Dalies Nr.
78-SIA459EDJ-T1-GE3
|
Vishay / Siliconix
|
MOSFETs -20V Vds 12V Vgs PowerPAK SC-70
|
|
105 509Prieinamumas
|
|
Min.: 1
Daugkart.: 1
:
3 000
|
|
|
|
|
MOSFETs 30V Vds 20V Vgs PowerPAK 1212-8
- SIS476DN-T1-GE3
- Vishay Semiconductors
-
1:
1,62 €
-
58 295Prieinamumas
|
„Mouser“ Dalies Nr.
78-SIS476DN-T1-GE3
|
Vishay Semiconductors
|
MOSFETs 30V Vds 20V Vgs PowerPAK 1212-8
|
|
58 295Prieinamumas
|
|
Min.: 1
Daugkart.: 1
:
3 000
|
|
|
|
|
SCHOTTKY Diodes ir Lygintuvai 7A, 60V, DFN3820A TRENCH SKY RECT.
- V7NL63HM3/I
- Vishay Semiconductors
-
1:
1,04 €
-
35 614Prieinamumas
|
„Mouser“ Dalies Nr.
625-V7NL63HM3/I
|
Vishay Semiconductors
|
SCHOTTKY Diodes ir Lygintuvai 7A, 60V, DFN3820A TRENCH SKY RECT.
|
|
35 614Prieinamumas
|
|
Min.: 1
Daugkart.: 1
:
14 000
|
|
|
|
|
SCHOTTKY Diodes ir Lygintuvai RECT 60V 20A SM TMBS
- V20PM63HM3/H
- Vishay Semiconductors
-
1:
1,78 €
-
2 690Prieinamumas
|
„Mouser“ Dalies Nr.
78-V20PM63HM3/H
|
Vishay Semiconductors
|
SCHOTTKY Diodes ir Lygintuvai RECT 60V 20A SM TMBS
|
|
2 690Prieinamumas
|
|
Min.: 1
Daugkart.: 1
:
1 500
|
|
|
|
|
Operaciniai Stiprintuvai - Optiniai Stiprintuvai Automotive-grade du al 5.5-V 1-MHz 4-
- LMV358AQDGKRQ1
- Texas Instruments
-
1:
0,679 €
-
47 780Prieinamumas
|
„Mouser“ Dalies Nr.
595-LMV358AQDGKRQ1
|
Texas Instruments
|
Operaciniai Stiprintuvai - Optiniai Stiprintuvai Automotive-grade du al 5.5-V 1-MHz 4-
|
|
47 780Prieinamumas
|
|
Min.: 1
Daugkart.: 1
:
2 500
|
|
|
|
|
RD sistema luste – SoC Mighty Gecko SoC QFN48 2.4 G 10 dB mesh multi-protocol 512 kB 64 kB (RAM) 31GPIO
- EFR32MG13P632F512GM48-DR
- Silicon Labs
-
1:
4,75 €
-
203 370Prieinamumas
|
„Mouser“ Dalies Nr.
634-MGP632F512GM48DR
|
Silicon Labs
|
RD sistema luste – SoC Mighty Gecko SoC QFN48 2.4 G 10 dB mesh multi-protocol 512 kB 64 kB (RAM) 31GPIO
|
|
203 370Prieinamumas
|
|
Min.: 1
Daugkart.: 1
:
2 500
|
|
|