Experience the Difference in Power

Infineon is the leader in the power semiconductor market. With more than 20 years of experience and as the innovator of the revolutionary CoolMOS™ super junction MOSFET technology, Infineon continues pioneering in the power management field. Customers can select based on individual design/system requirements from the industry's broadest silicon-based SJ MOSFET portfolio. As one of the few manufacturers mastering all three main power technologies, Infineon complements this assortment with a groundbreaking wide bandgap (WBG) offering. This offering comprises silicon-carbide-based CoolSiC™ MOSFETs, matching diodes, and gallium-nitride-based CoolGaN™ e-mode HEMTs. Solutions are available, ranging from exceptional price performance through unrivaled robustness to best-in-class devices. This enables customers to build more efficient, environmentally friendly, sustainable applications.

Rezultatai: 340
Pasirinkite Vaizdas Dalies Nr. Gam. Aprašymas Duomenų Lapas Prieinamumas Kainodara (EUR) Filtruokite lentelėje pateiktus rezultatus pagal vieneto kainą, remdamiesi kiekiu. Qty. RoHS
Infineon Technologies SCHOTTKY Diodes ir Lygintuvai CoolSiC Schottky diode 2000 V, 25 A G5 in a TO-247PLUS-4 HCC package 48Prieinamumas
Min.: 1
Daugkart.: 1

Infineon Technologies Gate Tvarkyklės 1200V Isolated 1-CH, 2A,MillerClamp,DESA 577Prieinamumas
Min.: 1
Daugkart.: 1
: 1 000

Infineon Technologies Gate Tvarkyklės 25V 1-CH low-side,2A OCP, Enable & FAULT 13 383Prieinamumas
12 500Tikėtina 2026-09-14
Min.: 1
Daugkart.: 1
: 2 500

Infineon Technologies Gate Tvarkyklės 1200V Isolated 1-CH, 4A, UL, Miller clam 1 601Prieinamumas
10 000Tikėtina 2026-10-22
Min.: 1
Daugkart.: 1
: 2 500

Infineon Technologies Gate Tvarkyklės 1200V Isolated 1-CH, 3.5A,Separate Output 6 048Prieinamumas
15 000Tikėtina 2027-02-04
Min.: 1
Daugkart.: 1
: 2 500

Infineon Technologies Gate Tvarkyklės 1200V Isolated 1-CH, 6.8A, UL, SEP Outpu 2 771Prieinamumas
Min.: 1
Daugkart.: 1
: 2 500

Infineon Technologies Gate Tvarkyklės LOW SIDE DRIVERS 14 968Prieinamumas
9 000Tikėtina 2027-07-22
Min.: 1
Daugkart.: 1
: 3 000

Infineon Technologies Gate Tvarkyklės LOW SIDE DRIVERS 33 071Prieinamumas
Min.: 1
Daugkart.: 1
: 3 000

Infineon Technologies Gate Tvarkyklės 1200V Isolated 2-CH, 2A,MillerClamp,DESA 2 161Prieinamumas
Min.: 1
Daugkart.: 1
: 1 000

Infineon Technologies Gate Tvarkyklės LOW SIDE DRIVERS 11 368Prieinamumas
Min.: 1
Daugkart.: 1
: 4 000

Infineon Technologies Gate Tvarkyklės LOW SIDE DRIVERS 4 229Prieinamumas
Min.: 1
Daugkart.: 1
: 4 000

Infineon Technologies Gate Tvarkyklės 200V 3-Phase,0.375A OCP, Enable & FAULT 3 642Prieinamumas
Min.: 1
Daugkart.: 1
: 3 000

Infineon Technologies Gate Tvarkyklės 200V 3-Phase,0.375A BSD, OCP, EN & FAULT 3 128Prieinamumas
3 000Tikėtina 2026-08-25
Min.: 1
Daugkart.: 1
: 3 000

Infineon Technologies Gate Tvarkyklės ISOLATED DRIVER 1 170Prieinamumas
Min.: 1
Daugkart.: 1
: 1 000

Infineon Technologies SiC SCHOTTKY diodai SIC DIODES 2 399Prieinamumas
Min.: 1
Daugkart.: 1

Infineon Technologies SiC SCHOTTKY diodai SIC DIODES 1 224Prieinamumas
1 000Pagal užsakymą
Min.: 1
Daugkart.: 1

Infineon Technologies SiC SCHOTTKY diodai SIC CHIP/DISCRETE 3 894Prieinamumas
Min.: 1
Daugkart.: 1

Infineon Technologies SiC SCHOTTKY diodai SIC DIODES 1 496Prieinamumas
Min.: 1
Daugkart.: 1

Infineon Technologies SiC SCHOTTKY diodai SIC CHIP/DISCRETE 1 409Prieinamumas
2 500Tikėtina 2027-01-28
Min.: 1
Daugkart.: 1
: 2 500

Infineon Technologies SiC SCHOTTKY diodai SIC DISCRETE 5 045Prieinamumas
Min.: 1
Daugkart.: 1
: 2 500

Infineon Technologies SiC SCHOTTKY diodai SIC CHIP/DISCRETE 700Prieinamumas
Min.: 1
Daugkart.: 1


Infineon Technologies SiC SCHOTTKY diodai SIC DIODES 700Prieinamumas
Min.: 1
Daugkart.: 1

Infineon Technologies SiC SCHOTTKY diodai SIC DISCRETE 473Prieinamumas
Min.: 1
Daugkart.: 1

Infineon Technologies MOSFETs HIGH POWER_NEW 2 993Prieinamumas
Min.: 1
Daugkart.: 1

Infineon Technologies MOSFETs HIGH POWER_NEW 824Prieinamumas
Min.: 1
Daugkart.: 1