Experience the Difference in Power

Infineon is the leader in the power semiconductor market. With more than 20 years of experience and as the innovator of the revolutionary CoolMOS™ super junction MOSFET technology, Infineon continues pioneering in the power management field. Customers can select based on individual design/system requirements from the industry's broadest silicon-based SJ MOSFET portfolio. As one of the few manufacturers mastering all three main power technologies, Infineon complements this assortment with a groundbreaking wide bandgap (WBG) offering. This offering comprises silicon-carbide-based CoolSiC™ MOSFETs, matching diodes, and gallium-nitride-based CoolGaN™ e-mode HEMTs. Solutions are available, ranging from exceptional price performance through unrivaled robustness to best-in-class devices. This enables customers to build more efficient, environmentally friendly, sustainable applications.

Rezultatai: 340
Pasirinkite Vaizdas Dalies Nr. Gam. Aprašymas Duomenų Lapas Prieinamumas Kainodara (EUR) Filtruokite lentelėje pateiktus rezultatus pagal vieneto kainą, remdamiesi kiekiu. Qty. RoHS

Infineon Technologies Gate Tvarkyklės 600V 3-Phase,0.375A BSD, OCP, EN & FAULT 1 047Prieinamumas
Min.: 1
Daugkart.: 1
: 1 000


Infineon Technologies Gate Tvarkyklės 600V 3-Phase,0.375A BSD, OCP, EN & FAULT 1 369Prieinamumas
Min.: 1
Daugkart.: 1
: 1 000

Infineon Technologies MOSFETs LOW POWER_NEW 1 579Prieinamumas
Min.: 1
Daugkart.: 1

Infineon Technologies MOSFETs HIGH POWER_NEW 2 966Prieinamumas
Min.: 1
Daugkart.: 1
: 3 000

Infineon Technologies MOSFETs HIGH POWER_NEW 1 578Prieinamumas
Min.: 1
Daugkart.: 1
: 3 000

Infineon Technologies Gate Tvarkyklės DRIVER-IC 890Prieinamumas
Min.: 1
Daugkart.: 1
: 1 000

Infineon Technologies Gate Tvarkyklės Dual Channel IGBT Driver IC +/-1200V 822Prieinamumas
Min.: 1
Daugkart.: 1
: 1 000

Infineon Technologies SiC SCHOTTKY diodai SIC DIODES 567Prieinamumas
Min.: 1
Daugkart.: 1

Infineon Technologies MOSFETs HIGH POWER_NEW 688Prieinamumas
Min.: 1
Daugkart.: 1

Infineon Technologies SiC SCHOTTKY diodai SIC DIODES 2 695Prieinamumas
Min.: 1
Daugkart.: 1
: 2 500

Infineon Technologies MOSFETs HIGH POWER_NEW 2 061Prieinamumas
Min.: 1
Daugkart.: 1
: 1 000

Infineon Technologies Gate Tvarkyklės 1200V Isolated 1-CH, 9.4A, UL, SEP Outpu 813Prieinamumas
Min.: 1
Daugkart.: 1
: 1 000

Infineon Technologies SiC SCHOTTKY diodai SIC DIODES 1 798Prieinamumas
Min.: 1
Daugkart.: 1
: 2 500

Infineon Technologies SiC MOSFET SILICON CARBIDE MOSFET 432Prieinamumas
Min.: 1
Daugkart.: 1

Infineon Technologies Gate Tvarkyklės 1200V Isolated 1-CH, 9.4A, SEP Output 1 274Prieinamumas
Min.: 1
Daugkart.: 1
: 1 000

Infineon Technologies SiC SCHOTTKY diodai SIC DIODES 4 541Prieinamumas
Min.: 1
Daugkart.: 1
: 2 500

Infineon Technologies Gate Tvarkyklės 1200V Isolated 1-CH, 3.5A, UL, SEP Outpu 2 250Prieinamumas
Min.: 1
Daugkart.: 1
: 1 000

Infineon Technologies Gate Tvarkyklės 1200V Isolated 1-CH, 9.4A, SEP Output 4 894Prieinamumas
Min.: 1
Daugkart.: 1
: 1 000

Infineon Technologies SiC MOSFET SILICON CARBIDE MOSFET 437Prieinamumas
Min.: 1
Daugkart.: 1

Infineon Technologies MOSFETs LOW POWER_NEW 4 532Prieinamumas
Min.: 1
Daugkart.: 1
: 3 000

Infineon Technologies MOSFETs LOW POWER_NEW 2 153Prieinamumas
Min.: 1
Daugkart.: 1

Infineon Technologies 6ED003L02-F2
Infineon Technologies Gate Tvarkyklės 200V 3-Phase,0.375A OCP, Enable & FAULT 2 360Prieinamumas
Min.: 1
Daugkart.: 1
: 3 000

Infineon Technologies Gate Tvarkyklės LOW SIDE DRIVERS 2 211Prieinamumas
Min.: 1
Daugkart.: 1
: 2 500

Infineon Technologies MOSFETs LOW POWER_NEW 2 485Prieinamumas
Min.: 1
Daugkart.: 1
: 2 500

Infineon Technologies MOSFETs HIGH POWER_NEW 831Prieinamumas
Min.: 1
Daugkart.: 1
: 1 000