|
|
MOSFETs 40 V, N-Ch, 2.56 m?, Automotive Power MOSFET, SSO8 HB (5x6), OptiMOS-7
- IAUCN04S7L025AHATMA1
- Infineon Technologies
-
1:
1,19 €
-
5 880Prieinamumas
-
Naujas Produktas
|
„Mouser“ Dalies Nr.
726-IAUCN04S7L025AHA
Naujas Produktas
|
Infineon Technologies
|
MOSFETs 40 V, N-Ch, 2.56 m?, Automotive Power MOSFET, SSO8 HB (5x6), OptiMOS-7
|
|
5 880Prieinamumas
|
|
|
1,19 €
|
|
|
0,782 €
|
|
|
0,65 €
|
|
|
0,625 €
|
|
|
0,604 €
|
|
|
0,593 €
|
|
Min.: 1
Daugkart.: 1
:
5 000
|
|
|
|
|
MOSFETs OptiMOS 7 Power-Transistor
- IAUCN04S7L050HATMA1
- Infineon Technologies
-
1:
1,66 €
-
5 289Prieinamumas
-
Naujas Produktas
|
„Mouser“ Dalies Nr.
726-IAUCN04S7L050HAT
Naujas Produktas
|
Infineon Technologies
|
MOSFETs OptiMOS 7 Power-Transistor
|
|
5 289Prieinamumas
|
|
|
1,66 €
|
|
|
1,06 €
|
|
|
0,707 €
|
|
|
0,559 €
|
|
|
0,478 €
|
|
|
0,446 €
|
|
Min.: 1
Daugkart.: 1
:
5 000
|
|
|
|
|
GaN FET Two 140 mohm / 650 V GaN transistors in half-bridge configuration
- IGI65D1414A3MSXUMA1
- Infineon Technologies
-
1:
6,40 €
-
2 970Prieinamumas
-
Naujas Produktas
|
„Mouser“ Dalies Nr.
726-IGI65D1414A3MSXU
Naujas Produktas
|
Infineon Technologies
|
GaN FET Two 140 mohm / 650 V GaN transistors in half-bridge configuration
|
|
2 970Prieinamumas
|
|
|
6,40 €
|
|
|
4,33 €
|
|
|
3,16 €
|
|
|
3,08 €
|
|
|
2,69 €
|
|
|
2,61 €
|
|
Min.: 1
Daugkart.: 1
:
3 000
|
|
|
|
|
MOSFET moduliai 1200V, 106A, Half-bridge, SiC Power Module
- SCZ4011KTAC23
- ROHM Semiconductor
-
1:
62,00 €
-
223Prieinamumas
-
Naujas Produktas
|
„Mouser“ Dalies Nr.
755-SCZ4011KTAC23
Naujas Produktas
|
ROHM Semiconductor
|
MOSFET moduliai 1200V, 106A, Half-bridge, SiC Power Module
|
|
223Prieinamumas
|
|
Min.: 1
Daugkart.: 1
|
|
|
|
|
MOSFETs DUAL P-CHANNEL 60-V (D-S) 175C MOSFET
- SQ4961CEY-T1_GE3
- Vishay Semiconductors
-
1:
1,34 €
-
4 950Prieinamumas
-
Naujas Produktas
|
„Mouser“ Dalies Nr.
78-SQ4961CEY-T1_GE3
Naujas Produktas
|
Vishay Semiconductors
|
MOSFETs DUAL P-CHANNEL 60-V (D-S) 175C MOSFET
|
|
4 950Prieinamumas
|
|
|
1,34 €
|
|
|
0,825 €
|
|
|
0,544 €
|
|
|
0,427 €
|
|
|
Peržiūrėti
|
|
|
0,376 €
|
|
|
0,318 €
|
|
|
0,293 €
|
|
|
0,283 €
|
|
|
0,278 €
|
|
Min.: 1
Daugkart.: 1
|
|
|
|
|
MOSFETs NFET DFN8 60V 58A 13MOHM
- NVMFD5873NLWFT1G-UM
- onsemi
-
1:
2,80 €
-
1 919Prieinamumas
-
1 500Tikėtina 2026-10-23
-
Naujas Produktas
|
„Mouser“ Dalies Nr.
863-FD5873NLWFT1G-UM
Naujas Produktas
|
onsemi
|
MOSFETs NFET DFN8 60V 58A 13MOHM
|
|
1 919Prieinamumas
1 500Tikėtina 2026-10-23
|
|
|
2,80 €
|
|
|
1,81 €
|
|
|
1,26 €
|
|
|
1,26 €
|
|
Min.: 1
Daugkart.: 1
Maks.: 150
:
1 500
|
|
|
|
|
Igbt Moduliai IGBT Module 300A 1700V
Infineon Technologies FF300R17KE3_S4
- FF300R17KE3_S4
- Infineon Technologies
-
1:
174,45 €
-
10Prieinamumas
|
„Mouser“ Dalies Nr.
641-FF300R17KE3_S4
|
Infineon Technologies
|
Igbt Moduliai IGBT Module 300A 1700V
|
|
10Prieinamumas
|
|
Min.: 1
Daugkart.: 1
|
|
|
|
|
Skaitmeniniai Transistors SSP SOT563 DUAL 2.2/2.2K
onsemi NSBC123EPDXV6T1G
- NSBC123EPDXV6T1G
- onsemi
-
1:
0,439 €
-
3 838Prieinamumas
|
„Mouser“ Dalies Nr.
863-NSBC123EPDXV6T1G
|
onsemi
|
Skaitmeniniai Transistors SSP SOT563 DUAL 2.2/2.2K
|
|
3 838Prieinamumas
|
|
|
0,439 €
|
|
|
0,316 €
|
|
|
0,287 €
|
|
|
0,181 €
|
|
|
Peržiūrėti
|
|
|
0,057 €
|
|
|
0,158 €
|
|
|
0,093 €
|
|
|
0,057 €
|
|
Min.: 1
Daugkart.: 1
:
4 000
|
|
|
|
|
SiC SCHOTTKY diodai 650V SiC Schottky Barrier Diode
- PCDH2065CCG1_T0_00601
- Panjit
-
1:
5,69 €
-
1 498Prieinamumas
-
NRND
|
„Mouser“ Dalies Nr.
241-PCDH2065CG1T0601
NRND
|
Panjit
|
SiC SCHOTTKY diodai 650V SiC Schottky Barrier Diode
|
|
1 498Prieinamumas
|
|
Min.: 1
Daugkart.: 1
|
|
|
|
|
SiC SCHOTTKY diodai 650V SiC Schottky Barrier Diode
- PCDH4065CCG1_T0_00601
- Panjit
-
1:
9,18 €
-
1 490Prieinamumas
-
NRND
|
„Mouser“ Dalies Nr.
241-PCDH4065CG1T0601
NRND
|
Panjit
|
SiC SCHOTTKY diodai 650V SiC Schottky Barrier Diode
|
|
1 490Prieinamumas
|
|
Min.: 1
Daugkart.: 1
|
|
|
|
|
Tiristorių moduliai 2600V 800A DUAL
Infineon Technologies TT400N26KOF
- TT400N26KOF
- Infineon Technologies
-
1:
425,17 €
-
1Prieinamumas
|
„Mouser“ Dalies Nr.
641-TT400N26KOF
|
Infineon Technologies
|
Tiristorių moduliai 2600V 800A DUAL
|
|
1Prieinamumas
|
|
Min.: 1
Daugkart.: 1
|
|
|
|
|
Dvipoliai tranzistoriai – BJT SS GP XSTR NPN 40V
onsemi NSVT3904DXV6T1G
- NSVT3904DXV6T1G
- onsemi
-
1:
0,645 €
-
3 995Prieinamumas
|
„Mouser“ Dalies Nr.
863-NSVT3904DXV6T1G
|
onsemi
|
Dvipoliai tranzistoriai – BJT SS GP XSTR NPN 40V
|
|
3 995Prieinamumas
|
|
|
0,645 €
|
|
|
0,446 €
|
|
|
0,421 €
|
|
|
0,262 €
|
|
|
Peržiūrėti
|
|
|
0,078 €
|
|
|
0,194 €
|
|
|
0,125 €
|
|
|
0,078 €
|
|
Min.: 1
Daugkart.: 1
:
4 000
|
|
|
|
|
Dvipoliai tranzistoriai – BJT SS GP XSTR PNP 40V
onsemi NSVT3906DXV6T1G
- NSVT3906DXV6T1G
- onsemi
-
1:
0,499 €
-
1 283Prieinamumas
|
„Mouser“ Dalies Nr.
863-NSVT3906DXV6T1G
|
onsemi
|
Dvipoliai tranzistoriai – BJT SS GP XSTR PNP 40V
|
|
1 283Prieinamumas
|
|
|
0,499 €
|
|
|
0,446 €
|
|
|
0,421 €
|
|
|
0,262 €
|
|
|
Peržiūrėti
|
|
|
0,078 €
|
|
|
0,194 €
|
|
|
0,119 €
|
|
|
0,078 €
|
|
Min.: 1
Daugkart.: 1
:
4 000
|
|
|
|
|
MOSFETs MOSFET, SO-8, -60V, -4.7A, 150C, P
- DI4A7P06SQ2
- Diotec Semiconductor
-
1:
0,972 €
-
3 936Prieinamumas
|
„Mouser“ Dalies Nr.
637-DI4A7P06SQ2
|
Diotec Semiconductor
|
MOSFETs MOSFET, SO-8, -60V, -4.7A, 150C, P
|
|
3 936Prieinamumas
|
|
|
0,972 €
|
|
|
0,715 €
|
|
|
0,457 €
|
|
|
0,366 €
|
|
|
0,252 €
|
|
|
Peržiūrėti
|
|
|
0,329 €
|
|
|
0,253 €
|
|
|
0,232 €
|
|
|
0,228 €
|
|
Min.: 1
Daugkart.: 1
:
4 000
|
|
|
|
|
Įvairiaspalviai šviesos diodai LED, SMD, PLCC4, Red/Green, 631nm/570nm, 180mcd/90mcd, Water Clear Lens, 120 Deg Viewing Angle.
- SMTL4-SBC
- Bivar
-
1:
1,08 €
-
9 940Prieinamumas
|
„Mouser“ Dalies Nr.
749-SMTL4-SBC
|
Bivar
|
Įvairiaspalviai šviesos diodai LED, SMD, PLCC4, Red/Green, 631nm/570nm, 180mcd/90mcd, Water Clear Lens, 120 Deg Viewing Angle.
|
|
9 940Prieinamumas
|
|
|
1,08 €
|
|
|
0,76 €
|
|
|
0,567 €
|
|
|
0,482 €
|
|
|
0,415 €
|
|
|
Peržiūrėti
|
|
|
0,453 €
|
|
|
0,391 €
|
|
|
0,378 €
|
|
|
0,373 €
|
|
Min.: 1
Daugkart.: 1
:
2 000
|
|
|
|
|
Igbt Moduliai 650 V, 100 A booster IGBT module
- DF100R07W1H5FPB53BPSA2
- Infineon Technologies
-
1:
29,89 €
-
30Prieinamumas
|
„Mouser“ Dalies Nr.
726-DFW1H5FPB53BPSA2
|
Infineon Technologies
|
Igbt Moduliai 650 V, 100 A booster IGBT module
|
|
30Prieinamumas
|
|
|
29,89 €
|
|
|
23,22 €
|
|
|
21,24 €
|
|
Min.: 1
Daugkart.: 1
|
|
|
|
|
JFETs Low Noise, Low Capacitance, Monolithic Dual, N-Channel JFET
- LSK489A-TO-71-6L-BK
- Linear Integrated Systems
-
1:
10,39 €
-
250Prieinamumas
|
„Mouser“ Dalies Nr.
722-LSK489ATO716LBK
|
Linear Integrated Systems
|
JFETs Low Noise, Low Capacitance, Monolithic Dual, N-Channel JFET
|
|
250Prieinamumas
|
|
|
10,39 €
|
|
|
7,52 €
|
|
|
6,39 €
|
|
|
5,43 €
|
|
|
5,25 €
|
|
Min.: 1
Daugkart.: 1
|
|
|
|
|
SiC SCHOTTKY diodai 1200V SiC Schottky Barrier Diode
- PCDH20120CCG1_T0_00601
- Panjit
-
1:
8,96 €
-
1 493Prieinamumas
-
NRND
|
„Mouser“ Dalies Nr.
241-PCDH2012CG1T0601
NRND
|
Panjit
|
SiC SCHOTTKY diodai 1200V SiC Schottky Barrier Diode
|
|
1 493Prieinamumas
|
|
Min.: 1
Daugkart.: 1
|
|
|
|
|
SiC SCHOTTKY diodai 1200V/10ASICDIODEDUAL
- UJ3D1210KSD
- onsemi
-
1:
8,98 €
-
1 070Prieinamumas
-
NRND
|
„Mouser“ Dalies Nr.
431-UJ3D1210KSD
NRND
|
onsemi
|
SiC SCHOTTKY diodai 1200V/10ASICDIODEDUAL
|
|
1 070Prieinamumas
|
|
|
8,98 €
|
|
|
5,38 €
|
|
|
5,29 €
|
|
|
4,71 €
|
|
|
4,00 €
|
|
Min.: 1
Daugkart.: 1
|
|
|
|
|
SCHOTTKY Diodes ir Lygintuvai Power Schottky
Microchip Technology SD241
- SD241
- Microchip Technology
-
1:
57,44 €
-
100Prieinamumas
|
„Mouser“ Dalies Nr.
494-SD241
|
Microchip Technology
|
SCHOTTKY Diodes ir Lygintuvai Power Schottky
|
|
100Prieinamumas
|
|
Min.: 1
Daugkart.: 1
|
Ne
|
|
|
|
Lygintuvai 8 Amps 800V
- DSP8-08S
- IXYS
-
1:
5,50 €
-
351Prieinamumas
|
„Mouser“ Dalies Nr.
747-DSP8-08S
|
IXYS
|
Lygintuvai 8 Amps 800V
|
|
351Prieinamumas
|
|
|
5,50 €
|
|
|
3,60 €
|
|
|
2,65 €
|
|
|
Peržiūrėti
|
|
|
2,12 €
|
|
|
2,36 €
|
|
|
2,12 €
|
|
Min.: 1
Daugkart.: 1
:
800
|
|
|
|
|
MOSFET moduliai SiC MOSFET phaseleg 25mO SMPD-B
- MCB40P1200LB-TUB
- IXYS
-
1:
237,40 €
-
26Prieinamumas
|
„Mouser“ Dalies Nr.
747-MCB40P1200LB-TUB
|
IXYS
|
MOSFET moduliai SiC MOSFET phaseleg 25mO SMPD-B
|
|
26Prieinamumas
|
|
Min.: 1
Daugkart.: 1
|
|
|
|
|
MOSFETs 40V Nch+Nch Power MOSFET
- SH8K25GZ0TB1
- ROHM Semiconductor
-
1:
1,44 €
-
6 013Prieinamumas
-
NRND
|
„Mouser“ Dalies Nr.
755-SH8K25GZ0TB1
NRND
|
ROHM Semiconductor
|
MOSFETs 40V Nch+Nch Power MOSFET
|
|
6 013Prieinamumas
|
|
|
1,44 €
|
|
|
0,92 €
|
|
|
0,612 €
|
|
|
0,482 €
|
|
|
0,436 €
|
|
|
Peržiūrėti
|
|
|
0,441 €
|
|
|
0,42 €
|
|
|
0,405 €
|
|
|
0,404 €
|
|
Min.: 1
Daugkart.: 1
:
2 500
|
|
|
|
|
Mažų signalų perjungimo diodai Silicon Switch Diode FOR HI-SPEED
- BAV99UE6327HTSA1
- Infineon Technologies
-
1:
0,877 €
-
11 347Prieinamumas
-
Netinkama eksploatuoti
|
„Mouser“ Dalies Nr.
726-BAV99UE6327HTSA1
Netinkama eksploatuoti
|
Infineon Technologies
|
Mažų signalų perjungimo diodai Silicon Switch Diode FOR HI-SPEED
|
|
11 347Prieinamumas
|
|
|
0,877 €
|
|
|
0,608 €
|
|
|
0,385 €
|
|
|
0,238 €
|
|
|
0,151 €
|
|
|
Peržiūrėti
|
|
|
0,176 €
|
|
|
0,134 €
|
|
|
0,092 €
|
|
Min.: 1
Daugkart.: 1
:
3 000
|
|
|
|
|
MOSFETs Nch+Pch 45V Vds 4.5A 0.046Rds(on) 6.8Qg
- SP8M24FRATB
- ROHM Semiconductor
-
1:
1,73 €
-
2 381Prieinamumas
-
NRND
|
„Mouser“ Dalies Nr.
755-SP8M24FRATB
NRND
|
ROHM Semiconductor
|
MOSFETs Nch+Pch 45V Vds 4.5A 0.046Rds(on) 6.8Qg
|
|
2 381Prieinamumas
|
|
|
1,73 €
|
|
|
1,01 €
|
|
|
0,903 €
|
|
|
0,858 €
|
|
|
Peržiūrėti
|
|
|
0,759 €
|
|
|
0,751 €
|
|
|
0,739 €
|
|
Min.: 1
Daugkart.: 1
:
2 500
|
|
|
