Tube RD MOSFET tranzistoriai

Rezultatai: 44
Pasirinkite Vaizdas Dalies Nr. Gam. Aprašymas Duomenų Lapas Prieinamumas Kainodara (EUR) Filtruokite lentelėje pateiktus rezultatus pagal vieneto kainą, remdamiesi kiekiu. Qty. RoHS ECAD modelis Tranzistoriaus poliškumas Technologijos svar. – nuolatinio išleidimo srovė Vds - nutekėjimo-šaltinio pramušimo įtampa RDS On - Drain-Source Varža Darbinis Dažnis Gain Išvesties Galia Minimali darbinė temperatūra Didžiausia darbinė temperatūra Montavimo stilius Pakuotė / Korpusas Pakavimas
STMicroelectronics RD MOSFET tranzistoriai RF Pwr Transistors LDMOST Plastic N Ch 1 549Prieinamumas
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N-Channel Si 5 A 25 V 1 GHz 11.5 dB 8 W - 65 C + 150 C SMD/SMT PowerSO-10RF-Formed-4 Tube
STMicroelectronics RD MOSFET tranzistoriai RF Pwr Transistors LDMOST Plastic Fam 872Prieinamumas
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N-Channel Si 7 A 65 V 1 GHz 14.3 dB 60 W - 65 C + 150 C SMD/SMT PowerSO-10RF-Formed-4 Tube
STMicroelectronics RD MOSFET tranzistoriai RF POWER TRANS 6 627Prieinamumas
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N-Channel Si 2.5 A 40 V 1 GHz 17 dB 3 W - 65 C + 150 C SMD/SMT PowerSO-10RF-Formed-4 Tube
STMicroelectronics RD MOSFET tranzistoriai RF POWER TRANS 1 497Prieinamumas
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N-Channel Si 4 A 40 V 1 GHz 17 dB 8 W - 65 C + 150 C SMD/SMT PowerSO-10RF-Formed-4 Tube
STMicroelectronics RD MOSFET tranzistoriai POWER R.F. N-Ch Trans 613Prieinamumas
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N-Channel Si 8 A 40 V 870 MHz 14.9 dB 35 W - 65 C + 165 C SMD/SMT PowerSO-12 Tube

Microchip Technology RD MOSFET tranzistoriai RF MOSFET (VDMOS) 1000 V 150 W 65 MHz TO-247 Common Source 70Prieinamumas
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N-Channel Si 6.5 A 1 kV 65 MHz 13 dB 150 W - 55 C + 150 C Through Hole TO-247-3 Tube
STMicroelectronics RD MOSFET tranzistoriai RF Pwr Transistors LDMOST Plastic N Ch 214Prieinamumas
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N-Channel Si 7 A 40 V 1 GHz 14.5 dB 25 W - 65 C + 150 C SMD/SMT PowerSO-10RF-Formed-4 Tube
Microchip Technology ARF465AG
Microchip Technology RD MOSFET tranzistoriai RF MOSFET (VDMOS) 1200 V 150 W 60 MHz TO-247 Common Source 281Prieinamumas
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N-Channel Si 6 A 1.2 kV 60 MHz 13 dB 150 W - 55 C + 150 C Through Hole Tube
STMicroelectronics RD MOSFET tranzistoriai POWER RF Transistor 148Prieinamumas
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N-Channel Si 7 A 40 V 1 GHz 14.5 dB 25 W - 65 C + 150 C SMD/SMT PowerSO-10RF-Straight-4 Tube
STMicroelectronics RD MOSFET tranzistoriai RF POWER transistor LDMOST family N-Chan 115Prieinamumas
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N-Channel Si 4 A 25 V 1 GHz 12 dB 3 W - 65 C + 150 C SMD/SMT PowerSO-10RF-Formed-4 Tube
STMicroelectronics RD MOSFET tranzistoriai POWER R.F. 472Prieinamumas
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N-Channel Si 2.5 A 40 V 1 GHz 17 dB 3 W - 65 C + 150 C SMD/SMT PowerSO-10RF-Straight-4 Tube
Microchip Technology ARF468AG
Microchip Technology RD MOSFET tranzistoriai RF MOSFET (VDMOS) 500 V 270 W 45 MHz TO-264 26Prieinamumas
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Si Tube
Microchip Technology ARF465BG
Microchip Technology RD MOSFET tranzistoriai RF MOSFET (VDMOS) 1200 V 150 W 60 MHz TO-247 Common Source 27Prieinamumas
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N-Channel Si 6 A 1.2 kV 60 MHz 13 dB 150 W - 55 C + 150 C Through Hole Tube


STMicroelectronics RD MOSFET tranzistoriai N-Ch MOS HF/VHF/ RF 300W 15dB 175MHz 132Prieinamumas
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N-Channel Si 40 A 125 V 250 MHz 16 dB 300 W + 150 C SMD/SMT M244 Tube
NXP Semiconductors RD MOSFET tranzistoriai Wideband RF Power LDMOS Transistor, 100 W CW over 1.8-250 MHz, 50 V 3 591Prieinamumas
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N-Channel Si 8.8 A 133 V 1.8 MHz to 250 MHz 21.1 dB 115 W - 40 C + 150 C Through Hole TO-220-3 Tube
NXP Semiconductors RD MOSFET tranzistoriai RF Power LDMOS Transistor, 300 W CW over 1.8-250 MHz, 50 V 355Prieinamumas
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N-Channel Si 30 A 133 V 1.8 MHz to 250 MHz 20.4 dB 330 W - 40 C + 150 C Through Hole TO-247-3 Tube

Microchip Technology RD MOSFET tranzistoriai RF MOSFET (VDMOS) 500 V 150 W 65 MHz TO-247 Common Source 121Prieinamumas
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Daugkart.: 1

N-Channel Si 14 A 500 V 65 MHz 13 dB 150 W - 55 C + 150 C Through Hole TO-247-3 Tube

Microchip Technology RD MOSFET tranzistoriai RF MOSFET (VDMOS) 500 V 150 W 65 MHz TO-247 Common Source 70Prieinamumas
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N-Channel Si 14 A 500 V 65 MHz 13 dB 150 W - 55 C + 150 C Through Hole TO-247-3 Tube
STMicroelectronics RD MOSFET tranzistoriai POWER RF Transistor 167Prieinamumas
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N-Channel Si 5 A 40 V 1 GHz 14 dB 15 W - 65 C + 150 C SMD/SMT PowerSO-10RF-Formed-4 Tube
STMicroelectronics RD MOSFET tranzistoriai POWER RF Transistor 186Prieinamumas
400Tikėtina 2026-03-05
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N-Channel Si 2.5 A 65 V 760 mOhms 1 GHz 16.5 dB 18 W - 65 C + 150 C SMD/SMT PowerSO-10RF-Formed-4 Tube
STMicroelectronics RD MOSFET tranzistoriai RF Pwr Transistors LDMOST Plastic N Ch 266Prieinamumas
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Daugkart.: 1

N-Channel Si 4 A 65 V 1 GHz 14 dB 30 W - 65 C + 150 C SMD/SMT PowerSO-10RF-Formed-4 Tube
STMicroelectronics RD MOSFET tranzistoriai RF PWR N-Ch MOS 350W 15dB 175MHz 78Prieinamumas
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N-Channel Si 40 A 130 V 175 MHz 15 dB 350 W + 200 C Screw Mount Tube
NXP Semiconductors RD MOSFET tranzistoriai Wideband RF Power LDMOS Transistor, 100 W CW over 1.8-250 MHz, 50 V 252Prieinamumas
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Ne
N-Channel Si 8.8 A 133 V 1.8 MHz to 250 MHz 21.1 dB 115 W - 40 C + 150 C Through Hole TO-220-3 Tube
Microchip Technology ARF461BG
Microchip Technology RD MOSFET tranzistoriai RF MOSFET (VDMOS) 1000 V 150 W 65 MHz TO-247 Common Source 54Prieinamumas
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Daugkart.: 1

N-Channel Si 6.5 A 1 kV 65 MHz 13 dB 150 W - 55 C + 150 C Through Hole Tube
NXP Semiconductors MHT1803B
NXP Semiconductors RD MOSFET tranzistoriai 300W 200MHZ TO-247-3L 341Prieinamumas
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N-Channel Si 1.8 MHz to 50 MHz 28.2 dB 300 W + 150 C Through Hole TO-247-3 Tube