|
|
SiC MOSFET CoolSiC 1200 V SiC MOSFET G2 : Silicon Carbide MOSFET with .XT interconnection technology
- IMZC120R007M2HXKSA1
- Infineon Technologies
-
1:
34,52 €
-
67Prieinamumas
-
240Tikėtina 2026-04-08
-
Naujas Produktas
|
„Mouser“ Dalies Nr.
726-IMZC120R007M2HXK
Naujas Produktas
|
Infineon Technologies
|
SiC MOSFET CoolSiC 1200 V SiC MOSFET G2 : Silicon Carbide MOSFET with .XT interconnection technology
|
|
67Prieinamumas
240Tikėtina 2026-04-08
|
|
|
34,52 €
|
|
|
24,42 €
|
|
|
23,15 €
|
|
Min.: 1
Daugkart.: 1
|
|
|
Through Hole
|
PG-TO247-4-U07
|
N-Channel
|
1 Channel
|
1.2 kV
|
201 A
|
20 mOhms
|
- 10 V, + 25 V
|
5.1 V
|
176 nC
|
- 55 C
|
+ 175 C
|
711 W
|
|
CoolSiC
|
|
|
|
SiC MOSFET CoolSiC Automotive MOSFET 750 V G2 in Q-DPAK
- AIMDQ75R007M2HXTMA1
- Infineon Technologies
-
1:
29,74 €
-
24Prieinamumas
-
750Tikėtina 2026-07-02
-
Naujas Produktas
|
„Mouser“ Dalies Nr.
726-AIMDQ75R007M2HXT
Naujas Produktas
|
Infineon Technologies
|
SiC MOSFET CoolSiC Automotive MOSFET 750 V G2 in Q-DPAK
|
|
24Prieinamumas
750Tikėtina 2026-07-02
|
|
Min.: 1
Daugkart.: 1
|
|
|
SMD/SMT
|
PG-HDSOP-22
|
N-Channel
|
1 Channel
|
750 V
|
220 A
|
9 mOhms
|
- 7 V, + 23 V
|
5.6 V
|
164 nC
|
- 55 C
|
+ 175 C
|
789 W
|
Enhancement
|
CoolSiC
|
|
|
|
SiC MOSFET Automotive SiC MOSFET, 750 V
- AIMZA75R033M2HXKSA1
- Infineon Technologies
-
1:
11,01 €
-
25Prieinamumas
-
Naujas Produktas
|
„Mouser“ Dalies Nr.
726-AIMZA75R033M2HXK
Naujas Produktas
|
Infineon Technologies
|
SiC MOSFET Automotive SiC MOSFET, 750 V
|
|
25Prieinamumas
|
|
|
11,01 €
|
|
|
8,62 €
|
|
|
7,18 €
|
|
|
6,40 €
|
|
|
5,97 €
|
|
Min.: 1
Daugkart.: 1
|
|
|
Through Hole
|
PG-TO-247-4
|
N-Channel
|
1 Channel
|
750 V
|
47 A
|
41.3 mOhms
|
- 7 V, + 23 V
|
5.6 V
|
37 nC
|
- 55 C
|
+ 175 C
|
164 W
|
Enhancement
|
CoolSiC
|
|
|
|
SiC MOSFET CoolSiC MOSFET 750 V G2
- IMBG75R033M2HXTMA1
- Infineon Technologies
-
1:
9,11 €
-
118Prieinamumas
-
Naujas Produktas
|
„Mouser“ Dalies Nr.
726-IMBG75R033M2HXTM
Naujas Produktas
|
Infineon Technologies
|
SiC MOSFET CoolSiC MOSFET 750 V G2
|
|
118Prieinamumas
|
|
|
9,11 €
|
|
|
7,13 €
|
|
|
5,94 €
|
|
|
5,35 €
|
|
|
4,95 €
|
|
Min.: 1
Daugkart.: 1
|
|
|
SMD/SMT
|
TO-263-7
|
N-Channel
|
1 Channel
|
750 V
|
50 A
|
41.3 mOhms
|
- 7 V, 23 V
|
5.6 V
|
37 nC
|
- 55 C
|
+ 175 C
|
189 W
|
Enhancement
|
CoolSiC
|
|
|
|
SiC MOSFET CoolSiC MOSFET 750 V G2
- IMBG75R060M2HXTMA1
- Infineon Technologies
-
1:
6,25 €
-
134Prieinamumas
-
Naujas Produktas
|
„Mouser“ Dalies Nr.
726-IMBG75R060M2HXTM
Naujas Produktas
|
Infineon Technologies
|
SiC MOSFET CoolSiC MOSFET 750 V G2
|
|
134Prieinamumas
|
|
|
6,25 €
|
|
|
4,67 €
|
|
|
3,78 €
|
|
|
3,38 €
|
|
|
2,97 €
|
|
Min.: 1
Daugkart.: 1
|
|
|
SMD/SMT
|
TO-263-7
|
N-Channel
|
1 Channel
|
750 V
|
29 A
|
78 mOhms
|
- 7 V, 23 V
|
5.6 V
|
20 nC
|
- 55 C
|
+ 175 C
|
116 W
|
Enhancement
|
CoolSiC
|
|
|
|
SiC MOSFET CoolSiC Automotive Power Device 750 V G2
- AIMDQ75R020M2HXTMA1
- Infineon Technologies
-
1:
13,79 €
-
35Prieinamumas
-
Naujas Produktas
|
„Mouser“ Dalies Nr.
726-AIMDQ75R020M2HXT
Naujas Produktas
|
Infineon Technologies
|
SiC MOSFET CoolSiC Automotive Power Device 750 V G2
|
|
35Prieinamumas
|
|
Min.: 1
Daugkart.: 1
|
|
|
SMD/SMT
|
PG-HDSOP-22
|
N-Channel
|
1 Channel
|
750 V
|
86 A
|
25 mOhms
|
-7 V to + 23 V
|
4.5 V
|
59 nC
|
- 55 C
|
+ 175 C
|
340 W
|
Enhancement
|
CoolSiC
|
|
|
|
SiC MOSFET Automotive SiC MOSFET, 750 V
- AIMZA75R007M2HXKSA1
- Infineon Technologies
-
1:
30,81 €
-
15Prieinamumas
-
Naujas Produktas
|
„Mouser“ Dalies Nr.
726-AIMZA75R007M2HXK
Naujas Produktas
|
Infineon Technologies
|
SiC MOSFET Automotive SiC MOSFET, 750 V
|
|
15Prieinamumas
|
|
Min.: 1
Daugkart.: 1
|
|
|
Through Hole
|
PG-TO-247-4
|
N-Channel
|
1 Channel
|
750 V
|
172 A
|
9 mOhms
|
- 11 V, + 25 V
|
5.6 V
|
169 nC
|
- 55 C
|
+ 175 C
|
263 W
|
Enhancement
|
CoolSiC
|
|
|
|
SiC MOSFET CoolSiC MOSFET 750 V G2
- IMBG75R025M2HXTMA1
- Infineon Technologies
-
1:
10,60 €
-
112Prieinamumas
-
Naujas Produktas
|
„Mouser“ Dalies Nr.
726-IMBG75R025M2HXTM
Naujas Produktas
|
Infineon Technologies
|
SiC MOSFET CoolSiC MOSFET 750 V G2
|
|
112Prieinamumas
|
|
|
10,60 €
|
|
|
8,63 €
|
|
|
7,20 €
|
|
|
6,48 €
|
|
|
5,99 €
|
|
Min.: 1
Daugkart.: 1
|
|
|
SMD/SMT
|
TO-263-7
|
N-Channel
|
1 Channel
|
750 V
|
64 A
|
31 mOhms
|
- 7 V, 23 V
|
5.6 V
|
49 nC
|
- 55 C
|
+ 175 C
|
234 W
|
Enhancement
|
CoolSiC
|
|
|
|
SiC MOSFET CoolSiC Automotive MOSFET 750 V G2 in Q-DPAK
- AIMDQ75R050M2HXTMA1
- Infineon Technologies
-
1:
6,84 €
-
49Prieinamumas
-
Naujas Produktas
|
„Mouser“ Dalies Nr.
726-AIMDQ75R050M2HXT
Naujas Produktas
|
Infineon Technologies
|
SiC MOSFET CoolSiC Automotive MOSFET 750 V G2 in Q-DPAK
|
|
49Prieinamumas
|
|
|
6,84 €
|
|
|
4,98 €
|
|
|
4,15 €
|
|
|
3,64 €
|
|
|
3,45 €
|
|
Min.: 1
Daugkart.: 1
|
|
|
SMD/SMT
|
PG-HDSOP-22
|
N-Channel
|
1 Channel
|
750 V
|
36 A
|
65 mOhms
|
- 7 V, + 23 V
|
5.6 V
|
24 nC
|
- 55 C
|
+ 175 C
|
148 W
|
Enhancement
|
CoolSiC
|
|
|
|
SiC MOSFET Automotive SiC MOSFET, 750 V
- AIMZA75R020M2HXKSA1
- Infineon Technologies
-
1:
15,28 €
-
25Prieinamumas
-
Naujas Produktas
|
„Mouser“ Dalies Nr.
726-AIMZA75R020M2HXK
Naujas Produktas
|
Infineon Technologies
|
SiC MOSFET Automotive SiC MOSFET, 750 V
|
|
25Prieinamumas
|
|
|
15,28 €
|
|
|
12,44 €
|
|
|
10,36 €
|
|
|
9,24 €
|
|
|
8,63 €
|
|
Min.: 1
Daugkart.: 1
|
|
|
Through Hole
|
PG-TO-247-4
|
N-Channel
|
1 Channel
|
750 V
|
72 A
|
25 mOhms
|
- 7 V, + 23 V
|
5.6 V
|
59 nC
|
- 55 C
|
+ 175 C
|
234 W
|
Enhancement
|
CoolSiC
|
|
|
|
SiC MOSFET CoolSiC MOSFET 750 V G2
- IMBG75R040M2HXTMA1
- Infineon Technologies
-
1:
7,65 €
-
140Prieinamumas
-
Naujas Produktas
|
„Mouser“ Dalies Nr.
726-IMBG75R040M2HXTM
Naujas Produktas
|
Infineon Technologies
|
SiC MOSFET CoolSiC MOSFET 750 V G2
|
|
140Prieinamumas
|
|
|
7,65 €
|
|
|
5,56 €
|
|
|
4,64 €
|
|
|
4,28 €
|
|
|
3,86 €
|
|
Min.: 1
Daugkart.: 1
|
|
|
SMD/SMT
|
TO-263-7
|
N-Channel
|
1 Channel
|
750 V
|
42 A
|
50 mOhms
|
- 7 V, 23 V
|
5.6 V
|
30 nC
|
- 55 C
|
+ 175 C
|
156 W
|
Enhancement
|
CoolSiC
|
|
|
|
SiC MOSFET SILICON CARBIDE MOSFET
- IMDQ75R050M2HXTMA1
- Infineon Technologies
-
1:
6,41 €
-
63Prieinamumas
-
750Tikėtina 2026-04-10
-
Naujas Produktas
|
„Mouser“ Dalies Nr.
726-IMDQ75R050M2HXTM
Naujas Produktas
|
Infineon Technologies
|
SiC MOSFET SILICON CARBIDE MOSFET
|
|
63Prieinamumas
750Tikėtina 2026-04-10
|
|
|
6,41 €
|
|
|
4,52 €
|
|
|
3,77 €
|
|
|
3,31 €
|
|
|
3,14 €
|
|
Min.: 1
Daugkart.: 1
|
|
|
SMD/SMT
|
PG-HDSOP-22
|
N-Channel
|
1 Channel
|
750 V
|
36 A
|
65 mhms
|
- 7 V, + 23 V
|
5.6 V
|
24 nC
|
- 55 C
|
+ 175 C
|
148 W
|
Enhancement
|
CoolSiC
|
|
|
|
SiC MOSFET Automotive SiC MOSFET, 750 V
- AIMZA75R011M2HXKSA1
- Infineon Technologies
-
1:
23,84 €
-
15Prieinamumas
-
Naujas Produktas
|
„Mouser“ Dalies Nr.
726-AIMZA75R011M2HXK
Naujas Produktas
|
Infineon Technologies
|
SiC MOSFET Automotive SiC MOSFET, 750 V
|
|
15Prieinamumas
|
|
Min.: 1
Daugkart.: 1
|
|
|
Through Hole
|
PG-TO-247-4
|
N-Channel
|
1 Channel
|
750 V
|
116 A
|
13.8 mOhms
|
- 7 V, + 25 V
|
5.6 V
|
106 nC
|
- 55 C
|
+ 175 C
|
333 W
|
Enhancement
|
CoolSiC
|
|
|
|
SiC MOSFET SILICON CARBIDE MOSFET
- IMDQ75R040M2HXTMA1
- Infineon Technologies
-
1:
7,23 €
-
70Prieinamumas
-
Naujas Produktas
|
„Mouser“ Dalies Nr.
726-IMDQ75R040M2HXTM
Naujas Produktas
|
Infineon Technologies
|
SiC MOSFET SILICON CARBIDE MOSFET
|
|
70Prieinamumas
|
|
|
7,23 €
|
|
|
5,26 €
|
|
|
4,39 €
|
|
|
3,84 €
|
|
|
3,65 €
|
|
Min.: 1
Daugkart.: 1
|
|
|
SMD/SMT
|
PG-HDSOP-22
|
N-Channel
|
1 Channel
|
750 V
|
45 A
|
50 mOhms
|
- 7 V, + 23 V
|
5.6 V
|
30 nC
|
- 55 C
|
+ 175 C
|
182 W
|
Enhancement
|
CoolSiC
|
|
|
|
SiC MOSFET Automotive SiC MOSFET, 750 V
- AIMZA75R025M2HXKSA1
- Infineon Technologies
-
1:
12,59 €
-
25Prieinamumas
-
Naujas Produktas
|
„Mouser“ Dalies Nr.
726-AIMZA75R025M2HXK
Naujas Produktas
|
Infineon Technologies
|
SiC MOSFET Automotive SiC MOSFET, 750 V
|
|
25Prieinamumas
|
|
|
12,59 €
|
|
|
10,25 €
|
|
|
8,54 €
|
|
|
7,61 €
|
|
|
7,10 €
|
|
Min.: 1
Daugkart.: 1
|
|
|
Through Hole
|
PG-TO-247-4
|
N-Channel
|
1 Channel
|
750 V
|
60 A
|
31 mOhms
|
- 7 V, + 23 V
|
5.6 V
|
49 nC
|
- 55 C
|
+ 175 C
|
202 W
|
Enhancement
|
CoolSiC
|
|
|
|
SiC MOSFET SILICON CARBIDE MOSFET
- IMDQ75R033M2HXTMA1
- Infineon Technologies
-
1:
8,62 €
-
100Prieinamumas
-
Naujas Produktas
|
„Mouser“ Dalies Nr.
726-IMDQ75R033M2HXTM
Naujas Produktas
|
Infineon Technologies
|
SiC MOSFET SILICON CARBIDE MOSFET
|
|
100Prieinamumas
|
|
|
8,62 €
|
|
|
6,74 €
|
|
|
5,62 €
|
|
|
4,93 €
|
|
|
4,68 €
|
|
Min.: 1
Daugkart.: 1
|
|
|
SMD/SMT
|
PG-HDSOP-22
|
N-Channel
|
1 Channel
|
750 V
|
53 A
|
41.3 mOhms
|
- 7 V, + 23 V
|
5.6 V
|
37 nC
|
- 55 C
|
+ 175 C
|
217 W
|
Enhancement
|
CoolSiC
|
|
|
|
SiC MOSFET SIC_DISCRETE
- AIMW120R060M1HXKSA1
- Infineon Technologies
-
1:
20,93 €
-
771Prieinamumas
|
„Mouser“ Dalies Nr.
726-W120R060M1HXKSA1
|
Infineon Technologies
|
SiC MOSFET SIC_DISCRETE
|
|
771Prieinamumas
|
|
Min.: 1
Daugkart.: 1
|
|
|
Through Hole
|
TO-247-3
|
N-Channel
|
1 Channel
|
1.2 kV
|
36 A
|
60 mOhms
|
- 7 V, + 23 V
|
5.7 V
|
31 nC
|
- 55 C
|
+ 175 C
|
150 mW
|
Enhancement
|
CoolSiC
|
|
|
|
SiC MOSFET SIC_DISCRETE
- AIMBG120R080M1XTMA1
- Infineon Technologies
-
1:
6,61 €
-
1 346Prieinamumas
|
„Mouser“ Dalies Nr.
726-AIMBG120R080M1X1
|
Infineon Technologies
|
SiC MOSFET SIC_DISCRETE
|
|
1 346Prieinamumas
|
|
|
6,61 €
|
|
|
4,25 €
|
|
|
3,72 €
|
|
|
3,72 €
|
|
Min.: 1
Daugkart.: 1
|
|
|
SMD/SMT
|
TO-263-7
|
N-Channel
|
1 Channel
|
1.2 kV
|
27 A
|
80 mOhms
|
- 20 V, + 20 V
|
4.5 V
|
|
- 55 C
|
+ 175 C
|
714 W
|
Enhancement
|
CoolSiC
|
|
|
|
SiC MOSFET SILICON CARBIDE MOSFET
- IMBG65R057M1HXTMA1
- Infineon Technologies
-
1:
6,15 €
-
3 984Prieinamumas
|
„Mouser“ Dalies Nr.
726-IMBG65R057M1HXTM
|
Infineon Technologies
|
SiC MOSFET SILICON CARBIDE MOSFET
|
|
3 984Prieinamumas
|
|
|
6,15 €
|
|
|
3,87 €
|
|
|
3,35 €
|
|
|
3,35 €
|
|
Min.: 1
Daugkart.: 1
|
|
|
SMD/SMT
|
|
N-Channel
|
1 Channel
|
650 V
|
39 A
|
74 mOhms
|
- 5 V, + 23 V
|
5.7 V
|
28 nC
|
- 55 C
|
+ 175 C
|
161 W
|
Enhancement
|
CoolSiC
|
|
|
|
SiC MOSFET SIC_DISCRETE
- AIMW120R045M1XKSA1
- Infineon Technologies
-
1:
18,21 €
-
829Prieinamumas
|
„Mouser“ Dalies Nr.
726-AIMW120R045M1XKS
|
Infineon Technologies
|
SiC MOSFET SIC_DISCRETE
|
|
829Prieinamumas
|
|
Min.: 1
Daugkart.: 1
|
|
|
Through Hole
|
TO-247-3
|
N-Channel
|
1 Channel
|
1.2 kV
|
52 A
|
59 mOhms
|
- 7 V, + 20 V
|
5.7 V
|
57 nC
|
- 55 C
|
+ 175 C
|
228 W
|
Enhancement
|
CoolSiC
|
|
|
|
SiC MOSFET CoolSiC 1200 V SiC Trench MOSFET in TO-263-7 package
- IMBG120R045M1HXTMA1
- Infineon Technologies
-
1:
9,86 €
-
651Prieinamumas
|
„Mouser“ Dalies Nr.
726-IMBG120R045M1HXT
|
Infineon Technologies
|
SiC MOSFET CoolSiC 1200 V SiC Trench MOSFET in TO-263-7 package
|
|
651Prieinamumas
|
|
|
9,86 €
|
|
|
7,46 €
|
|
|
6,46 €
|
|
|
5,94 €
|
|
|
5,55 €
|
|
Min.: 1
Daugkart.: 1
|
|
|
SMD/SMT
|
TO-263-7
|
N-Channel
|
1 Channel
|
1.2 kV
|
47 A
|
45 mOhms
|
- 7 V, + 20 V
|
5.1 V
|
46 nC
|
- 55 C
|
+ 175 C
|
227 W
|
Enhancement
|
CoolSiC
|
|
|
|
SiC MOSFET SILICON CARBIDE MOSFET
- IMBG65R163M1HXTMA1
- Infineon Technologies
-
1:
4,28 €
-
739Prieinamumas
|
„Mouser“ Dalies Nr.
726-IMBG65R163M1HXTM
|
Infineon Technologies
|
SiC MOSFET SILICON CARBIDE MOSFET
|
|
739Prieinamumas
|
|
|
4,28 €
|
|
|
2,60 €
|
|
|
2,03 €
|
|
|
1,92 €
|
|
|
1,79 €
|
|
Min.: 1
Daugkart.: 1
|
|
|
SMD/SMT
|
|
N-Channel
|
1 Channel
|
650 V
|
17 A
|
217 mOhms
|
- 5 V, + 23 V
|
5.7 V
|
27 nC
|
- 55 C
|
+ 175 C
|
85 W
|
Enhancement
|
CoolSiC
|
|
|
|
SiC MOSFET CoolSiC 1200 V SiC Trench MOSFET in TO-263-7 package
- IMBG120R060M1HXTMA1
- Infineon Technologies
-
1:
7,83 €
-
340Prieinamumas
|
„Mouser“ Dalies Nr.
726-IMBG120R060M1HXT
|
Infineon Technologies
|
SiC MOSFET CoolSiC 1200 V SiC Trench MOSFET in TO-263-7 package
|
|
340Prieinamumas
|
|
|
7,83 €
|
|
|
5,40 €
|
|
|
4,33 €
|
|
|
4,32 €
|
|
|
4,03 €
|
|
Min.: 1
Daugkart.: 1
|
|
|
SMD/SMT
|
TO-263-7
|
N-Channel
|
1 Channel
|
1.2 kV
|
36 A
|
83 mOhms
|
- 7 V, + 20 V
|
5.1 V
|
34 nC
|
- 55 C
|
+ 175 C
|
181 W
|
Enhancement
|
CoolSiC
|
|
|
|
SiC MOSFET SILICON CARBIDE MOSFET
- IMBG65R107M1HXTMA1
- Infineon Technologies
-
1:
5,01 €
-
753Prieinamumas
|
„Mouser“ Dalies Nr.
726-IMBG65R107M1HXTM
|
Infineon Technologies
|
SiC MOSFET SILICON CARBIDE MOSFET
|
|
753Prieinamumas
|
|
|
5,01 €
|
|
|
3,59 €
|
|
|
2,59 €
|
|
|
2,58 €
|
|
|
2,41 €
|
|
Min.: 1
Daugkart.: 1
|
|
|
SMD/SMT
|
|
N-Channel
|
1 Channel
|
650 V
|
24 A
|
141 mOhms
|
- 5 V, + 23 V
|
5.7 V
|
35 nC
|
- 55 C
|
+ 175 C
|
110 W
|
Enhancement
|
CoolSiC
|
|
|
|
SiC MOSFET SIC_DISCRETE
- AIMW120R035M1HXKSA1
- Infineon Technologies
-
1:
28,96 €
-
279Prieinamumas
-
Netinkama eksploatuoti
|
„Mouser“ Dalies Nr.
726-W120R035M1HXKSA1
Netinkama eksploatuoti
|
Infineon Technologies
|
SiC MOSFET SIC_DISCRETE
|
|
279Prieinamumas
|
|
Min.: 1
Daugkart.: 1
|
|
|
Through Hole
|
TO-247-3
|
N-Channel
|
1 Channel
|
1.2 kV
|
52 A
|
35 mOhms
|
- 7 V, + 23 V
|
4.5 V
|
59 nC
|
- 55 C
|
+ 175 C
|
228 W
|
Enhancement
|
CoolSiC
|
|