CoolSiC SiC MOSFET

Rezultatai: 213
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Infineon Technologies SiC MOSFET CoolSiC 1200 V SiC MOSFET G2 : Silicon Carbide MOSFET with .XT interconnection technology 67Prieinamumas
240Tikėtina 2026-04-08
Min.: 1
Daugkart.: 1

Through Hole PG-TO247-4-U07 N-Channel 1 Channel 1.2 kV 201 A 20 mOhms - 10 V, + 25 V 5.1 V 176 nC - 55 C + 175 C 711 W CoolSiC
Infineon Technologies SiC MOSFET CoolSiC Automotive MOSFET 750 V G2 in Q-DPAK 24Prieinamumas
750Tikėtina 2026-07-02
Min.: 1
Daugkart.: 1
Reel: 750

SMD/SMT PG-HDSOP-22 N-Channel 1 Channel 750 V 220 A 9 mOhms - 7 V, + 23 V 5.6 V 164 nC - 55 C + 175 C 789 W Enhancement CoolSiC
Infineon Technologies SiC MOSFET Automotive SiC MOSFET, 750 V 25Prieinamumas
Min.: 1
Daugkart.: 1
Through Hole PG-TO-247-4 N-Channel 1 Channel 750 V 47 A 41.3 mOhms - 7 V, + 23 V 5.6 V 37 nC - 55 C + 175 C 164 W Enhancement CoolSiC
Infineon Technologies SiC MOSFET CoolSiC MOSFET 750 V G2 118Prieinamumas
Min.: 1
Daugkart.: 1
Reel: 1 000

SMD/SMT TO-263-7 N-Channel 1 Channel 750 V 50 A 41.3 mOhms - 7 V, 23 V 5.6 V 37 nC - 55 C + 175 C 189 W Enhancement CoolSiC
Infineon Technologies SiC MOSFET CoolSiC MOSFET 750 V G2 134Prieinamumas
Min.: 1
Daugkart.: 1
Reel: 1 000

SMD/SMT TO-263-7 N-Channel 1 Channel 750 V 29 A 78 mOhms - 7 V, 23 V 5.6 V 20 nC - 55 C + 175 C 116 W Enhancement CoolSiC
Infineon Technologies SiC MOSFET CoolSiC Automotive Power Device 750 V G2 35Prieinamumas
Min.: 1
Daugkart.: 1
Reel: 750

SMD/SMT PG-HDSOP-22 N-Channel 1 Channel 750 V 86 A 25 mOhms -7 V to + 23 V 4.5 V 59 nC - 55 C + 175 C 340 W Enhancement CoolSiC
Infineon Technologies SiC MOSFET Automotive SiC MOSFET, 750 V 15Prieinamumas
Min.: 1
Daugkart.: 1
Through Hole PG-TO-247-4 N-Channel 1 Channel 750 V 172 A 9 mOhms - 11 V, + 25 V 5.6 V 169 nC - 55 C + 175 C 263 W Enhancement CoolSiC
Infineon Technologies SiC MOSFET CoolSiC MOSFET 750 V G2 112Prieinamumas
Min.: 1
Daugkart.: 1
Reel: 1 000

SMD/SMT TO-263-7 N-Channel 1 Channel 750 V 64 A 31 mOhms - 7 V, 23 V 5.6 V 49 nC - 55 C + 175 C 234 W Enhancement CoolSiC
Infineon Technologies SiC MOSFET CoolSiC Automotive MOSFET 750 V G2 in Q-DPAK 49Prieinamumas
Min.: 1
Daugkart.: 1
Reel: 750

SMD/SMT PG-HDSOP-22 N-Channel 1 Channel 750 V 36 A 65 mOhms - 7 V, + 23 V 5.6 V 24 nC - 55 C + 175 C 148 W Enhancement CoolSiC
Infineon Technologies SiC MOSFET Automotive SiC MOSFET, 750 V 25Prieinamumas
Min.: 1
Daugkart.: 1
Through Hole PG-TO-247-4 N-Channel 1 Channel 750 V 72 A 25 mOhms - 7 V, + 23 V 5.6 V 59 nC - 55 C + 175 C 234 W Enhancement CoolSiC
Infineon Technologies SiC MOSFET CoolSiC MOSFET 750 V G2 140Prieinamumas
Min.: 1
Daugkart.: 1
Reel: 1 000

SMD/SMT TO-263-7 N-Channel 1 Channel 750 V 42 A 50 mOhms - 7 V, 23 V 5.6 V 30 nC - 55 C + 175 C 156 W Enhancement CoolSiC
Infineon Technologies SiC MOSFET SILICON CARBIDE MOSFET 63Prieinamumas
750Tikėtina 2026-04-10
Min.: 1
Daugkart.: 1
Reel: 750

SMD/SMT PG-HDSOP-22 N-Channel 1 Channel 750 V 36 A 65 mhms - 7 V, + 23 V 5.6 V 24 nC - 55 C + 175 C 148 W Enhancement CoolSiC
Infineon Technologies SiC MOSFET Automotive SiC MOSFET, 750 V 15Prieinamumas
Min.: 1
Daugkart.: 1
Through Hole PG-TO-247-4 N-Channel 1 Channel 750 V 116 A 13.8 mOhms - 7 V, + 25 V 5.6 V 106 nC - 55 C + 175 C 333 W Enhancement CoolSiC
Infineon Technologies SiC MOSFET SILICON CARBIDE MOSFET 70Prieinamumas
Min.: 1
Daugkart.: 1
Reel: 750

SMD/SMT PG-HDSOP-22 N-Channel 1 Channel 750 V 45 A 50 mOhms - 7 V, + 23 V 5.6 V 30 nC - 55 C + 175 C 182 W Enhancement CoolSiC
Infineon Technologies SiC MOSFET Automotive SiC MOSFET, 750 V 25Prieinamumas
Min.: 1
Daugkart.: 1
Through Hole PG-TO-247-4 N-Channel 1 Channel 750 V 60 A 31 mOhms - 7 V, + 23 V 5.6 V 49 nC - 55 C + 175 C 202 W Enhancement CoolSiC
Infineon Technologies SiC MOSFET SILICON CARBIDE MOSFET 100Prieinamumas
Min.: 1
Daugkart.: 1
Reel: 750

SMD/SMT PG-HDSOP-22 N-Channel 1 Channel 750 V 53 A 41.3 mOhms - 7 V, + 23 V 5.6 V 37 nC - 55 C + 175 C 217 W Enhancement CoolSiC
Infineon Technologies SiC MOSFET SIC_DISCRETE 771Prieinamumas
Min.: 1
Daugkart.: 1

Through Hole TO-247-3 N-Channel 1 Channel 1.2 kV 36 A 60 mOhms - 7 V, + 23 V 5.7 V 31 nC - 55 C + 175 C 150 mW Enhancement CoolSiC
Infineon Technologies SiC MOSFET SIC_DISCRETE 1 346Prieinamumas
Min.: 1
Daugkart.: 1
Reel: 1 000

SMD/SMT TO-263-7 N-Channel 1 Channel 1.2 kV 27 A 80 mOhms - 20 V, + 20 V 4.5 V - 55 C + 175 C 714 W Enhancement CoolSiC


Infineon Technologies SiC MOSFET SILICON CARBIDE MOSFET 3 984Prieinamumas
Min.: 1
Daugkart.: 1
Reel: 1 000

SMD/SMT N-Channel 1 Channel 650 V 39 A 74 mOhms - 5 V, + 23 V 5.7 V 28 nC - 55 C + 175 C 161 W Enhancement CoolSiC
Infineon Technologies SiC MOSFET SIC_DISCRETE 829Prieinamumas
Min.: 1
Daugkart.: 1

Through Hole TO-247-3 N-Channel 1 Channel 1.2 kV 52 A 59 mOhms - 7 V, + 20 V 5.7 V 57 nC - 55 C + 175 C 228 W Enhancement CoolSiC
Infineon Technologies SiC MOSFET CoolSiC 1200 V SiC Trench MOSFET in TO-263-7 package 651Prieinamumas
Min.: 1
Daugkart.: 1
Reel: 1 000

SMD/SMT TO-263-7 N-Channel 1 Channel 1.2 kV 47 A 45 mOhms - 7 V, + 20 V 5.1 V 46 nC - 55 C + 175 C 227 W Enhancement CoolSiC


Infineon Technologies SiC MOSFET SILICON CARBIDE MOSFET 739Prieinamumas
Min.: 1
Daugkart.: 1
Reel: 1 000

SMD/SMT N-Channel 1 Channel 650 V 17 A 217 mOhms - 5 V, + 23 V 5.7 V 27 nC - 55 C + 175 C 85 W Enhancement CoolSiC
Infineon Technologies SiC MOSFET CoolSiC 1200 V SiC Trench MOSFET in TO-263-7 package 340Prieinamumas
Min.: 1
Daugkart.: 1
Reel: 1 000

SMD/SMT TO-263-7 N-Channel 1 Channel 1.2 kV 36 A 83 mOhms - 7 V, + 20 V 5.1 V 34 nC - 55 C + 175 C 181 W Enhancement CoolSiC


Infineon Technologies SiC MOSFET SILICON CARBIDE MOSFET 753Prieinamumas
Min.: 1
Daugkart.: 1
Reel: 1 000

SMD/SMT N-Channel 1 Channel 650 V 24 A 141 mOhms - 5 V, + 23 V 5.7 V 35 nC - 55 C + 175 C 110 W Enhancement CoolSiC
Infineon Technologies SiC MOSFET SIC_DISCRETE 279Prieinamumas
Min.: 1
Daugkart.: 1

Through Hole TO-247-3 N-Channel 1 Channel 1.2 kV 52 A 35 mOhms - 7 V, + 23 V 4.5 V 59 nC - 55 C + 175 C 228 W Enhancement CoolSiC