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SiC MOSFET

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Dalies Nr.

SiC MOSFET Automotive-grade silicon carbide Power MOSFET 1200 V, 19.2 mOhm typ., 90 A

SCT019HU120G3AG
STMicroelectronics
1: 19,02 €
12Prieinamumas
600Tikėtina 2027-04-02
Naujas Produktas

Gam. dalies Nr.
SCT019HU120G3AG

„Mouser“ Dalies Nr.
511-SCT019HU120G3AG

Naujas Produktas

STMicroelectronics

SiC MOSFET Automotive-grade silicon carbide Power MOSFET 1200 V, 19.2 mOhm typ., 90 A

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Duomenų Lapas

12Prieinamumas

600Tikėtina 2027-04-02

Pjaunama Juosta

19,02 €

14,21 €

10,91 €

Ritė

10,86 €

Min.: 1
Daugkart.: 1

: 600

AEC-Q100

SiC MOSFET Automotive-grade silicon carbide Power MOSFET 1200 V, 75 mOhm typ., 33 A in an H

SCTW40N120G2VAG
STMicroelectronics
1: 16,61 €
551Prieinamumas

Gam. dalies Nr.
SCTW40N120G2VAG

„Mouser“ Dalies Nr.
511-SCTW40N120G2VAG

STMicroelectronics

SiC MOSFET Automotive-grade silicon carbide Power MOSFET 1200 V, 75 mOhm typ., 33 A in an H

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Duomenų Lapas

551Prieinamumas

16,61 €

10,74 €

9,18 €

9,16 €

Min.: 1
Daugkart.: 1

Through Hole

HiP-247-3

N-Channel

1 Channel

1.2 kV

36 A

100 mOhms

- 10 V, + 22 V

4.9 V

61 nC

- 55 C

+ 200 C

278 W

Enhancement

AEC-Q101

SiC MOSFET Silicon carbide Power MOSFET 650 V, 18 mOhm typ., 40 A in a PowerFLAT 8x8 HV pac

SCTL90N65G2V
STMicroelectronics
1: 26,83 €
1 597Prieinamumas

Gam. dalies Nr.
SCTL90N65G2V

„Mouser“ Dalies Nr.
511-SCTL90N65G2V

STMicroelectronics

SiC MOSFET Silicon carbide Power MOSFET 650 V, 18 mOhm typ., 40 A in a PowerFLAT 8x8 HV pac

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Duomenų Lapas

1 597Prieinamumas

Pjaunama Juosta

26,83 €

19,62 €

19,17 €

19,13 €

17,93 €

Ritė

17,91 €

„MouseReel“ galima

Min.: 1
Daugkart.: 1

: 3 000

SMD/SMT

PowerFLAT-5

N-Channel

1 Channel

650 V

40 A

18 mOhms

- 10 V, + 22 V

5 V

157 nC

- 55 C

+ 175 C

935 W

Enhancement

SiC MOSFET Silicon carbide Power MOSFET 650 V, 55 mOhm typ., 40 A in a PowerFLAT 8x8 HV pac

SCTL35N65G2V
STMicroelectronics
1: 14,75 €
2 311Prieinamumas

Gam. dalies Nr.
SCTL35N65G2V

„Mouser“ Dalies Nr.
511-SCTL35N65G2V

STMicroelectronics

SiC MOSFET Silicon carbide Power MOSFET 650 V, 55 mOhm typ., 40 A in a PowerFLAT 8x8 HV pac

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Duomenų Lapas

2 311Prieinamumas

Pjaunama Juosta

14,75 €

10,42 €

8,94 €

8,36 €

Ritė

8,36 €

„MouseReel“ galima

Min.: 1
Daugkart.: 1

: 3 000

SMD/SMT

PowerFLAT-5

N-Channel

1 Channel

650 V

40 A

67 mOhms

- 10 V, + 22 V

5 V

73 nC

- 55 C

+ 175 C

417 W

Enhancement

SiC MOSFET Automotive-grade silicon carbide Power MOSFET 900 V, 12 mOhm typ., 110 A in an HiP247-4 package

SCT012W90G3-4AG
STMicroelectronics
1: 19,09 €
632Prieinamumas
Naujas Produktas

Gam. dalies Nr.
SCT012W90G3-4AG

„Mouser“ Dalies Nr.
511-SCT012W90G3-4AG

Naujas Produktas

STMicroelectronics

SiC MOSFET Automotive-grade silicon carbide Power MOSFET 900 V, 12 mOhm typ., 110 A in an HiP247-4 package

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Duomenų Lapas

632Prieinamumas

19,09 €

12,03 €

11,65 €

Min.: 1
Daugkart.: 1

Through Hole

HiP247-3

N-Channel

1 Channel

900 V

110 A

15.8 mOhms

- 10 V, + 22 V

3.1 V

138 nC

- 55 C

+ 200 C

625 W

Enhancement

AEC-Q101

SiC MOSFET Automotive-grade silicon carbide Power MOSFET 1200 V, 16 mOhm typ., 112 A in an H2PAK-7 package

SCT016H120G3AG
STMicroelectronics
1: 21,47 €
491Prieinamumas
Naujas Produktas

Gam. dalies Nr.
SCT016H120G3AG

„Mouser“ Dalies Nr.
511-SCT016H120G3AG

Naujas Produktas

STMicroelectronics

SiC MOSFET Automotive-grade silicon carbide Power MOSFET 1200 V, 16 mOhm typ., 112 A in an H2PAK-7 package

Sužinokite Daugiau

Duomenų Lapas

491Prieinamumas

Pjaunama Juosta

21,47 €

15,52 €

15,29 €

14,77 €

Ritė

13,53 €

„MouseReel“ galima

Min.: 1
Daugkart.: 1

: 1 000

SMD/SMT

H2PAK-7

N-Channel

1 Channel

1.2 kV

112 A

22 mOhms

- 10 V, + 22 V

3 V

150 nC

- 55 C

+ 175 C

652 W

Enhancement

AEC-Q101

SiC MOSFET Automotive-grade silicon carbide Power MOSFET 1200 V, 18.5 mOhm typ., 100 A in an HU3PAK package

SCT020HU120G3AG
STMicroelectronics
1: 19,57 €
254Prieinamumas
600Tikėtina 2026-09-25
Naujas Produktas

Gam. dalies Nr.
SCT020HU120G3AG

„Mouser“ Dalies Nr.
511-SCT020HU120G3AG

Naujas Produktas

STMicroelectronics

SiC MOSFET Automotive-grade silicon carbide Power MOSFET 1200 V, 18.5 mOhm typ., 100 A in an HU3PAK package

Sužinokite Daugiau

Duomenų Lapas

254Prieinamumas

600Tikėtina 2026-09-25

Pjaunama Juosta

19,57 €

14,62 €

12,64 €

Ritė

11,19 €

„MouseReel“ galima

Min.: 1
Daugkart.: 1

: 600

SMD/SMT

HU3PAK-7

N-Channel

1 Channel

1.2 kV

100 A

28 mOhms

- 10 V, + 22 V

3 V

121 nC

- 55 C

555 W

Enhancement

AEC-Q101

SiC MOSFET Automotive-grade silicon carbide Power MOSFET 650 V, 29 mOhm typ., 60 A in an H2PAK-7 package

SCT027H65G3AG
STMicroelectronics
1: 11,70 €
943Prieinamumas
Naujas Produktas

Gam. dalies Nr.
SCT027H65G3AG

„Mouser“ Dalies Nr.
511-SCT027H65G3AG

Naujas Produktas

STMicroelectronics

SiC MOSFET Automotive-grade silicon carbide Power MOSFET 650 V, 29 mOhm typ., 60 A in an H2PAK-7 package

Sužinokite Daugiau

Duomenų Lapas

943Prieinamumas

Pjaunama Juosta

11,70 €

8,17 €

6,64 €

Ritė

6,20 €

Min.: 1
Daugkart.: 1

: 1 000

SMD/SMT

H2PAK-7

N-Channel

1 Channel

650 V

60 A

39.3 mOhms

- 10 V, + 22 V

3 V

48.6 nC

- 55 C

+ 175 C

300 W

Enhancement

AEC-Q101

SiC MOSFET Silicon carbide Power MOSFET 650 V, 58 mOhm typ., 30 A in a TO-LL package

SCT055TO65G3
STMicroelectronics
1: 7,87 €
1 754Prieinamumas
Naujas Produktas

Gam. dalies Nr.
SCT055TO65G3

„Mouser“ Dalies Nr.
511-SCT055TO65G3

Naujas Produktas

STMicroelectronics

SiC MOSFET Silicon carbide Power MOSFET 650 V, 58 mOhm typ., 30 A in a TO-LL package

Sužinokite Daugiau

Duomenų Lapas

1 754Prieinamumas

Pjaunama Juosta

7,87 €

5,38 €

4,44 €

4,03 €

3,69 €

Ritė

3,69 €

Min.: 1
Daugkart.: 1

: 1 800

SMD/SMT

TOLL-8

N-Channel

1 Channel

650 V

30 A

72 mOhms

- 10 V, + 22 V

3 V

31 nC

- 55 C

+ 175 C

234 W

Enhancement

SiC MOSFET Automotive-grade silicon carbide Power MOSFET 650 V, 20 mOhm typ., 55 A in an HiP247-4 package

SCT018W65G3-4AG
STMicroelectronics
1: 16,53 €
465Prieinamumas

Gam. dalies Nr.
SCT018W65G3-4AG

„Mouser“ Dalies Nr.
511-SCT018W65G3-4AG

STMicroelectronics

SiC MOSFET Automotive-grade silicon carbide Power MOSFET 650 V, 20 mOhm typ., 55 A in an HiP247-4 package

Sužinokite Daugiau

Duomenų Lapas

465Prieinamumas

16,53 €

12,18 €

9,31 €

8,09 €

Min.: 1
Daugkart.: 1

Through Hole

HiP-247-4

N-Channel

1 Channel

650 V

55 A

27 mOhms

- 18 V, + 18 V

4.2 V

77 nC

- 55 C

+ 200 C

398 W

Enhancement

AEC-Q101

SiC MOSFET Automotive-grade silicon carbide Power MOSFET 1200 V, 18.5 mOhm typ., 100 A in an HiP247-4 package

SCT020W120G3-4AG
STMicroelectronics
1: 17,40 €
362Prieinamumas

Gam. dalies Nr.
SCT020W120G3-4AG

„Mouser“ Dalies Nr.
511-SCT020W120G3-4AG

STMicroelectronics

SiC MOSFET Automotive-grade silicon carbide Power MOSFET 1200 V, 18.5 mOhm typ., 100 A in an HiP247-4 package

Sužinokite Daugiau

Duomenų Lapas

362Prieinamumas

17,40 €

10,88 €

10,35 €

Min.: 1
Daugkart.: 1

Through Hole

Hip247-4

N-Channel

1 Channel

1.2 kV

100 A

28 mOhms

- 10 V, + 22 V

3 V

121 nC

- 55 C

+ 200 C

541 W

Enhancement

AEC-Q101

SiC MOSFET Automotive-grade silicon carbide Power MOSFET 1200 V, 27 mOhm typ., 56 A in an HiP247-4 package

SCT025W120G3-4AG
STMicroelectronics
1: 17,51 €
305Prieinamumas
1 200Tikėtina 2026-08-31

Gam. dalies Nr.
SCT025W120G3-4AG

„Mouser“ Dalies Nr.
511-SCT025W120G3-4AG

STMicroelectronics

SiC MOSFET Automotive-grade silicon carbide Power MOSFET 1200 V, 27 mOhm typ., 56 A in an HiP247-4 package

Sužinokite Daugiau

Duomenų Lapas

305Prieinamumas

1 200Tikėtina 2026-08-31

17,51 €

12,52 €

10,79 €

9,58 €

Min.: 1
Daugkart.: 1

Through Hole

HiP-247-4

N-Channel

1 Channel

1.2 kV

56 A

37 mOhms

- 18 V, + 18 V

4.2 V

73 nC

- 55 C

+ 200 C

388 W

Enhancement

AEC-Q101

SiC MOSFET Automotive-grade silicon carbide Power MOSFET 1200 V, 27 mOhm typ., 56 A in an HiP247 package

SCT025W120G3AG
STMicroelectronics
1: 16,30 €
424Prieinamumas

Gam. dalies Nr.
SCT025W120G3AG

„Mouser“ Dalies Nr.
511-SCT025W120G3AG

STMicroelectronics

SiC MOSFET Automotive-grade silicon carbide Power MOSFET 1200 V, 27 mOhm typ., 56 A in an HiP247 package

Sužinokite Daugiau

Duomenų Lapas

424Prieinamumas

16,30 €

10,14 €

9,51 €

Min.: 1
Daugkart.: 1

Through Hole

HiP247-3

N-Channel

1 Channel

1.2 kV

56 A

37 mOhms

- 10 V, + 22 V

3 V

73 nC

- 55 C

+ 200 C

388 W

Enhancement

AEC-Q101

SiC MOSFET Automotive-grade silicon carbide Power MOSFET 650 V, 29 mOhm typ., 60 A

SCT027W65G3-4AG
STMicroelectronics
1: 13,37 €
261Prieinamumas

Gam. dalies Nr.
SCT027W65G3-4AG

„Mouser“ Dalies Nr.
511-SCT027W65G3-4AG

STMicroelectronics

SiC MOSFET Automotive-grade silicon carbide Power MOSFET 650 V, 29 mOhm typ., 60 A

Sužinokite Daugiau

Duomenų Lapas

261Prieinamumas

13,37 €

9,98 €

7,55 €

6,35 €

Min.: 1
Daugkart.: 1

Through Hole

HiP-247-4

N-Channel

1 Channel

650 V

60 A

29 mOhms

- 18 V, + 18 V

4.2 V

51 nC

- 55 C

+ 200 C

313 W

Enhancement

AEC-Q100

SiC MOSFET Automotive-grade silicon carbide Power MOSFET 1200 V, 40 mOhm typ., 40 A

SCT040W120G3-4AG
STMicroelectronics
1: 12,10 €
377Prieinamumas

Gam. dalies Nr.
SCT040W120G3-4AG

„Mouser“ Dalies Nr.
511-SCT040W120G3-4AG

STMicroelectronics

SiC MOSFET Automotive-grade silicon carbide Power MOSFET 1200 V, 40 mOhm typ., 40 A

Sužinokite Daugiau

Duomenų Lapas

377Prieinamumas

12,10 €

8,46 €

6,47 €

Min.: 1
Daugkart.: 1

Through Hole

HiP-247-4

N-Channel

1 Channel

1.2 kV

40 A

54 mOhms

- 18 V, + 18 V

4.2 V

56 nC

- 55 C

+ 200 C

312 W

Enhancement

AEC-Q100

SiC MOSFET Automotive-grade silicon carbide Power MOSFET 1200 V, 40 mOhm typ., 40 A in an HiP247 package

SCT040W120G3AG
STMicroelectronics
1: 11,95 €
505Prieinamumas

Gam. dalies Nr.
SCT040W120G3AG

„Mouser“ Dalies Nr.
511-SCT040W120G3AG

STMicroelectronics

SiC MOSFET Automotive-grade silicon carbide Power MOSFET 1200 V, 40 mOhm typ., 40 A in an HiP247 package

Sužinokite Daugiau

Duomenų Lapas

505Prieinamumas

11,95 €

8,39 €

6,41 €

Min.: 1
Daugkart.: 1

Through Hole

HiP-247-3

N-Channel

1 Channel

1.2 kV

40 A

54 mOhms

- 18 V, + 18 V

4.2 V

56 nC

- 55 C

+ 200 C

312 W

Enhancement

AEC-Q101

SiC MOSFET Silicon carbide Power MOSFET 650 V, 45 mOhm typ., 30 A in an HiP247-4 package

SCT040W65G3-4
STMicroelectronics
1: 9,93 €
527Prieinamumas

Gam. dalies Nr.
SCT040W65G3-4

„Mouser“ Dalies Nr.
511-SCT040W65G3-4

STMicroelectronics

SiC MOSFET Silicon carbide Power MOSFET 650 V, 45 mOhm typ., 30 A in an HiP247-4 package

Sužinokite Daugiau

Duomenų Lapas

527Prieinamumas

9,93 €

5,96 €

5,31 €

5,05 €

Min.: 1
Daugkart.: 1

Through Hole

HiP247-4

N-Channel

1 Channel

650 V

30 A

63 mOhms

- 10 V, + 22 V

3 V

37.5 nC

- 55 C

+ 200 C

240 W

Enhancement

SiC MOSFET Automotive-grade silicon carbide Power MOSFET 650 V, 45 mOhm typ., 30 A in an HiP247-4 package

SCT040W65G3-4AG
STMicroelectronics
1: 11,54 €
481Prieinamumas

Gam. dalies Nr.
SCT040W65G3-4AG

„Mouser“ Dalies Nr.
511-SCT040W65G3-4AG

STMicroelectronics

SiC MOSFET Automotive-grade silicon carbide Power MOSFET 650 V, 45 mOhm typ., 30 A in an HiP247-4 package

Sužinokite Daugiau

Duomenų Lapas

481Prieinamumas

11,54 €

8,37 €

7,16 €

6,09 €

Min.: 1
Daugkart.: 1

Through Hole

HiP247-4

N-Channel

1 Channel

650 V

30 A

63 mOhms

- 10 V, + 22 V

3 V

37.5 nC

- 55 C

+ 200 C

240 W

Enhancement

AEC-Q101

SiC MOSFET Automotive-grade silicon carbide Power MOSFET 650 V, 58 mOhm typ., 30 A

SCT055HU65G3AG
STMicroelectronics
1: 11,64 €
1 080Prieinamumas

Gam. dalies Nr.
SCT055HU65G3AG

„Mouser“ Dalies Nr.
511-SCT055HU65G3AG

STMicroelectronics

SiC MOSFET Automotive-grade silicon carbide Power MOSFET 650 V, 58 mOhm typ., 30 A

Sužinokite Daugiau

Duomenų Lapas

1 080Prieinamumas

Pjaunama Juosta

11,64 €

8,87 €

7,39 €

Ritė

6,45 €

6,15 €

„MouseReel“ galima

Min.: 1
Daugkart.: 1

: 600

SMD/SMT

HU3PAK-7

N-Channel

1 Channel

650 V

30 A

72 mOhms

- 10 V, + 22 V

4.2 V

29 nC

- 55 C

+ 175 C

185 W

Enhancement

AEC-Q101

SiC MOSFET Automotive-grade silicon carbide Power MOSFET 1200 V, 63 mOhm typ., 30 A in an HiP247-4 package

SCT070W120G3-4AG
STMicroelectronics
1: 11,63 €
301Prieinamumas
1 200Tikėtina 2026-08-10

Gam. dalies Nr.
SCT070W120G3-4AG

„Mouser“ Dalies Nr.
511-SCT070W120G3-4AG

STMicroelectronics

SiC MOSFET Automotive-grade silicon carbide Power MOSFET 1200 V, 63 mOhm typ., 30 A in an HiP247-4 package

Sužinokite Daugiau

Duomenų Lapas

301Prieinamumas

1 200Tikėtina 2026-08-10

11,63 €

9,37 €

7,35 €

6,15 €

Min.: 1
Daugkart.: 1

Through Hole

HiP-247-4

N-Channel

1 Channel

1.2 kV

30 A

87 mOhms

- 18 V, + 18 V

4.2 V

41 nC

- 55 C

+ 200 C

236 W

Enhancement

AEC-Q101

SiC MOSFET Automotive-grade silicon carbide Power MOSFET 900 V, 12 mOhm typ., 110 A in an H2PAK-7 package

SCT012H90G3AG
STMicroelectronics
1: 18,93 €
49Prieinamumas
1 000Tikėtina 2026-08-17

Gam. dalies Nr.
SCT012H90G3AG

„Mouser“ Dalies Nr.
511-SCT012H90G3AG

STMicroelectronics

SiC MOSFET Automotive-grade silicon carbide Power MOSFET 900 V, 12 mOhm typ., 110 A in an H2PAK-7 package

Sužinokite Daugiau

Duomenų Lapas

49Prieinamumas

1 000Tikėtina 2026-08-17

Pjaunama Juosta

18,93 €

13,58 €

12,33 €

12,32 €

Ritė

11,52 €

Min.: 1
Daugkart.: 1

: 1 000

SMD/SMT

H2PAK-7

N-Channel

1 Channel

900 V

110 A

12 mOhms

- 18 V, + 18 V

4.2 V

138 nC

- 55 C

+ 175 C

625 W

Enhancement

AEC-Q101

SiC MOSFET Automotive-grade silicon carbide Power MOSFET 650 V, 20 mOhm typ., 55 A in an H2PAK-7 package

SCT018H65G3AG
STMicroelectronics
1: 14,25 €
72Prieinamumas

Gam. dalies Nr.
SCT018H65G3AG

„Mouser“ Dalies Nr.
511-SCT018H65G3AG

STMicroelectronics

SiC MOSFET Automotive-grade silicon carbide Power MOSFET 650 V, 20 mOhm typ., 55 A in an H2PAK-7 package

Sužinokite Daugiau

Duomenų Lapas

72Prieinamumas

Pjaunama Juosta

14,25 €

10,05 €

9,61 €

8,57 €

Ritė

8,00 €

„MouseReel“ galima

Min.: 1
Daugkart.: 1

: 1 000

SMD/SMT

H2PAK-7

N-Channel

1 Channel

650 V

55 A

27 mOhms

- 18 V, + 18 V

4.2 V

79.4 nC

- 55 C

+ 175 C

385 W

Enhancement

AEC-Q101

SiC MOSFET Automotive-grade silicon carbide Power MOSFET 650 V, 40 mOhm typ., 30 A

SCT040HU65G3AG
STMicroelectronics
1: 11,72 €
115Prieinamumas

Gam. dalies Nr.
SCT040HU65G3AG

„Mouser“ Dalies Nr.
511-SCT040HU65G3AG

STMicroelectronics

SiC MOSFET Automotive-grade silicon carbide Power MOSFET 650 V, 40 mOhm typ., 30 A

Sužinokite Daugiau

Duomenų Lapas

115Prieinamumas

Pjaunama Juosta

11,72 €

8,18 €

6,65 €

Ritė

6,21 €

„MouseReel“ galima

Min.: 1
Daugkart.: 1

: 600

SMD/SMT

H2PAK-2

N-Channel

1 Channel

650 V

7 A

40 mOhms

- 30 V, + 30 V

5 V

36 nC

- 55 C

+ 150 C

266 W

Enhancement

AEC-Q101

SiC MOSFET Automotive-grade silicon carbide Power MOSFET 1200 V, 63 mOhm typ., 30 A in an H2PAK-7 package

SCT070H120G3AG
STMicroelectronics
1: 11,25 €
76Prieinamumas

Gam. dalies Nr.
SCT070H120G3AG

„Mouser“ Dalies Nr.
511-SCT070H120G3AG

STMicroelectronics

SiC MOSFET Automotive-grade silicon carbide Power MOSFET 1200 V, 63 mOhm typ., 30 A in an H2PAK-7 package

Sužinokite Daugiau

Duomenų Lapas

76Prieinamumas

Pjaunama Juosta

11,25 €

7,83 €

6,30 €

Ritė

5,89 €

Min.: 1
Daugkart.: 1

: 1 000

SMD/SMT

H2PAK-7

N-Channel

1 Channel

1.2 kV

30 A

87 mOhms

- 18 V, + 18 V

4.2 V

37 nC

- 55 C

+ 175 C

223 W

Enhancement

AEC-Q101

SiC MOSFET Automotive-grade silicon carbide Power MOSFET 650 V 40 mOhm typ. 30 A

SCT040H65G3AG
STMicroelectronics
1: 10,41 €
867Prieinamumas

Gam. dalies Nr.
SCT040H65G3AG

„Mouser“ Dalies Nr.
511-SCT040H65G3AG

STMicroelectronics

SiC MOSFET Automotive-grade silicon carbide Power MOSFET 650 V 40 mOhm typ. 30 A

Sužinokite Daugiau

Duomenų Lapas

867Prieinamumas

Pjaunama Juosta

10,41 €

7,22 €

5,70 €

Ritė

5,32 €

„MouseReel“ galima

Min.: 1
Daugkart.: 1

: 1 000

SMD/SMT

N-Channel

1 Channel

650 V

30 A

40 mOhms

- 10 V, + 22 V

4.2 V

39.5 nC

- 55 C

+ 175 C

221 W

Enhancement

AEC-Q101

SiC MOSFET

klientų aptarnavimas

Įmonė

Ištekliai

Pagalba

10.5 nC
10.5 mOhms
12 mOhms
15 mOhms
15.8 mOhms
18 mOhms
22 mOhms
26 mOhms
27 mOhms
28 mOhms
29 mOhms
37 mOhms
39.3 mOhms
40 mOhms
54 mOhms
63 mOhms
67 mOhms
72 mOhms
87 mOhms
100 mOhms

14 nC
22 nC
29 nC
31 nC
32 nC
36 nC
37 nC
37.5 nC
39.5 nC
41 nC
42.5 nC
45 nC
48.6 nC
51 nC
54 nC
56 nC
61 nC
73 nC
76 nC
77 nC

120 W
150 W
175 W
185 W
210 W
221 W
223 W
234 W
236 W
240 W
266 W
278 W
288 W
300 W
312 W
313 W
375 W
385 W
388 W
398 W