|
|
MOSFETs 600V Vds 30V Vgs TO-247AC
- SIHG22N60E-E3
- Vishay / Siliconix
-
1:
4,53 €
-
1 371Prieinamumas
|
„Mouser“ Dalies Nr.
781-SIHG22N60E-E3
|
Vishay / Siliconix
|
MOSFETs 600V Vds 30V Vgs TO-247AC
|
|
1 371Prieinamumas
|
|
|
4,53 €
|
|
|
2,66 €
|
|
|
2,19 €
|
|
|
1,97 €
|
|
Min.: 1
Daugkart.: 1
|
|
|
Si
|
Through Hole
|
TO-247-3
|
N-Channel
|
1 Channel
|
600 V
|
21 A
|
180 mOhms
|
- 30 V, 30 V
|
4 V
|
57 nC
|
- 55 C
|
+ 150 C
|
227 W
|
Enhancement
|
|
|
Tube
|
|
|
|
MOSFETs 900V N-Channel Adv Q-FET C-Series
- FQP9N90C
- onsemi
-
1:
4,32 €
-
1 533Prieinamumas
|
„Mouser“ Dalies Nr.
512-FQP9N90C
|
onsemi
|
MOSFETs 900V N-Channel Adv Q-FET C-Series
|
|
1 533Prieinamumas
|
|
|
4,32 €
|
|
|
2,24 €
|
|
|
2,05 €
|
|
|
1,89 €
|
|
|
1,81 €
|
|
Min.: 1
Daugkart.: 1
|
|
|
Si
|
Through Hole
|
TO-220-3
|
N-Channel
|
1 Channel
|
900 V
|
8 A
|
1.4 Ohms
|
- 30 V, 30 V
|
3 V
|
58 nC
|
- 55 C
|
+ 150 C
|
205 W
|
Enhancement
|
|
QFET
|
Tube
|
|
|
|
MOSFETs 650V Vds; 30V Vgs TO-247AC
- SIHG039N60E-GE3
- Vishay Semiconductors
-
1:
9,96 €
-
1 415Prieinamumas
|
„Mouser“ Dalies Nr.
78-SIHG039N60E-GE3
|
Vishay Semiconductors
|
MOSFETs 650V Vds; 30V Vgs TO-247AC
|
|
1 415Prieinamumas
|
|
Min.: 1
Daugkart.: 1
|
|
|
Si
|
Through Hole
|
TO-247-3
|
N-Channel
|
1 Channel
|
600 V
|
63 A
|
39 mOhms
|
- 30 V, 30 V
|
3 V
|
126 nC
|
- 55 C
|
+ 150 C
|
357 W
|
Enhancement
|
|
|
Tube
|
|
|
|
MOSFETs TO247 600V 8.4A N-CH MOSFET
- SIHG186N60EF-GE3
- Vishay / Siliconix
-
1:
3,59 €
-
832Prieinamumas
|
„Mouser“ Dalies Nr.
78-SIHG186N60EF-GE3
|
Vishay / Siliconix
|
MOSFETs TO247 600V 8.4A N-CH MOSFET
|
|
832Prieinamumas
|
|
|
3,59 €
|
|
|
3,49 €
|
|
|
2,66 €
|
|
|
2,25 €
|
|
|
Peržiūrėti
|
|
|
1,91 €
|
|
|
1,63 €
|
|
Min.: 1
Daugkart.: 1
|
|
|
Si
|
Through Hole
|
TO-247-3
|
N-Channel
|
1 Channel
|
650 V
|
8.4 A
|
168 mOhms
|
- 30 V, 30 V
|
5 V
|
32 nC
|
- 55 C
|
+ 150 C
|
156 W
|
Enhancement
|
|
|
Tube
|
|
|
|
MOSFETs 200V Vds 20V Vgs D2PAK (TO-263)
- SUM90140E-GE3
- Vishay Semiconductors
-
1:
3,49 €
-
1 107Prieinamumas
|
„Mouser“ Dalies Nr.
78-SUM90140E-GE3
|
Vishay Semiconductors
|
MOSFETs 200V Vds 20V Vgs D2PAK (TO-263)
|
|
1 107Prieinamumas
|
|
|
3,49 €
|
|
|
2,34 €
|
|
|
1,74 €
|
|
|
1,40 €
|
|
Min.: 1
Daugkart.: 1
|
|
|
Si
|
SMD/SMT
|
D2PAK-3 (TO-263-3)
|
N-Channel
|
1 Channel
|
200 V
|
90 A
|
13.8 mOhms
|
- 20 V, 20 V
|
2 V
|
96 nC
|
- 55 C
|
+ 175 C
|
375 W
|
Enhancement
|
|
ThunderFET
|
Tube
|
|
|
|
MOSFETs TO220 100V 11A P-CH MOSFET
- IRFI9540GPBF
- Vishay Semiconductors
-
1:
3,70 €
-
1 604Prieinamumas
|
„Mouser“ Dalies Nr.
844-IRFI9540GPBF
|
Vishay Semiconductors
|
MOSFETs TO220 100V 11A P-CH MOSFET
|
|
1 604Prieinamumas
|
|
|
3,70 €
|
|
|
2,16 €
|
|
|
1,88 €
|
|
|
1,60 €
|
|
Min.: 1
Daugkart.: 1
|
|
|
Si
|
Through Hole
|
TO-220-3
|
P-Channel
|
1 Channel
|
100 V
|
13 A
|
200 mOhms
|
- 20 V, 20 V
|
4 V
|
61 nC
|
- 55 C
|
+ 175 C
|
42 W
|
Enhancement
|
|
|
Tube
|
|
|
|
MOSFETs TO251 200V 3.6A P-CH MOSFET
- IRFU9220PBF
- Vishay Semiconductors
-
1:
2,73 €
-
7 242Prieinamumas
|
„Mouser“ Dalies Nr.
844-IRFU9220PBF
|
Vishay Semiconductors
|
MOSFETs TO251 200V 3.6A P-CH MOSFET
|
|
7 242Prieinamumas
|
|
|
2,73 €
|
|
|
1,76 €
|
|
|
1,26 €
|
|
|
1,06 €
|
|
|
Peržiūrėti
|
|
|
0,98 €
|
|
|
0,912 €
|
|
Min.: 1
Daugkart.: 1
|
|
|
Si
|
Through Hole
|
TO-251-3
|
P-Channel
|
1 Channel
|
200 V
|
3.6 A
|
1.5 Ohms
|
- 20 V, 20 V
|
4 V
|
20 nC
|
- 55 C
|
+ 150 C
|
42 W
|
Enhancement
|
|
|
Tube
|
|
|
|
MOSFETs 900V N-Chan Advance Q-FET C-Series
- FQPF9N90CT
- onsemi
-
1:
4,35 €
-
2 315Prieinamumas
|
„Mouser“ Dalies Nr.
512-FQPF9N90CT
|
onsemi
|
MOSFETs 900V N-Chan Advance Q-FET C-Series
|
|
2 315Prieinamumas
|
|
|
4,35 €
|
|
|
2,30 €
|
|
|
2,10 €
|
|
|
1,88 €
|
|
|
1,87 €
|
|
Min.: 1
Daugkart.: 1
|
|
|
Si
|
Through Hole
|
TO-220-3
|
N-Channel
|
1 Channel
|
900 V
|
8 A
|
1.4 Ohms
|
- 30 V, 30 V
|
3 V
|
58 nC
|
- 55 C
|
+ 150 C
|
68 W
|
Enhancement
|
|
|
Tube
|
|
|
|
MOSFETs LOW POWER_NEW
- IPP60R360P7XKSA1
- Infineon Technologies
-
1:
1,47 €
-
5 835Prieinamumas
|
„Mouser“ Dalies Nr.
726-IPP60R360P7XKSA1
|
Infineon Technologies
|
MOSFETs LOW POWER_NEW
|
|
5 835Prieinamumas
|
|
|
1,47 €
|
|
|
0,809 €
|
|
|
0,709 €
|
|
|
0,605 €
|
|
|
0,521 €
|
|
Min.: 1
Daugkart.: 1
|
|
|
Si
|
Through Hole
|
TO-220-3
|
N-Channel
|
1 Channel
|
600 V
|
9 A
|
305 mOhms
|
- 20 V, 20 V
|
3 V
|
13 nC
|
- 55 C
|
+ 150 C
|
41 W
|
Enhancement
|
|
CoolMOS
|
Tube
|
|
|
|
MOSFETs HIGH POWER_NEW
- IPW60R045P7XKSA1
- Infineon Technologies
-
1:
6,78 €
-
380Prieinamumas
|
„Mouser“ Dalies Nr.
726-IPW60R045P7XKSA1
|
Infineon Technologies
|
MOSFETs HIGH POWER_NEW
|
|
380Prieinamumas
|
|
|
6,78 €
|
|
|
3,95 €
|
|
|
3,32 €
|
|
Min.: 1
Daugkart.: 1
|
|
|
Si
|
Through Hole
|
TO-247-3
|
N-Channel
|
1 Channel
|
650 V
|
61 A
|
45 mOhms
|
- 20 V, 20 V
|
3.5 V
|
90 nC
|
- 55 C
|
+ 150 C
|
201 W
|
Enhancement
|
|
CoolMOS
|
Tube
|
|
|
|
MOSFETs HIGH POWER_LEGACY
- IPW60R160P6
- Infineon Technologies
-
1:
3,78 €
-
849Prieinamumas
|
„Mouser“ Dalies Nr.
726-IPW60R160P6
|
Infineon Technologies
|
MOSFETs HIGH POWER_LEGACY
|
|
849Prieinamumas
|
|
|
3,78 €
|
|
|
2,53 €
|
|
|
1,94 €
|
|
|
1,72 €
|
|
|
1,53 €
|
|
Min.: 1
Daugkart.: 1
|
|
|
Si
|
Through Hole
|
TO-247-3
|
N-Channel
|
1 Channel
|
600 V
|
23.8 A
|
144 mOhms
|
- 20 V, 20 V
|
3.5 V
|
44 nC
|
- 55 C
|
+ 150 C
|
176 W
|
Enhancement
|
|
CoolMOS
|
Tube
|
|
|
|
MOSFETs 600V Vds 30V Vgs TO-220AB
- SIHP28N60EF-GE3
- Vishay / Siliconix
-
1:
5,82 €
-
950Prieinamumas
|
„Mouser“ Dalies Nr.
78-SIHP28N60EF-GE3
|
Vishay / Siliconix
|
MOSFETs 600V Vds 30V Vgs TO-220AB
|
|
950Prieinamumas
|
|
|
5,82 €
|
|
|
3,12 €
|
|
|
2,86 €
|
|
|
2,46 €
|
|
Min.: 1
Daugkart.: 1
|
|
|
Si
|
Through Hole
|
TO-220-3
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
Tube
|
|
|
|
MOSFETs P-Chan 60V 8.8 Amp
- IRFR9024PBF
- Vishay Semiconductors
-
1:
1,61 €
-
5 318Prieinamumas
|
„Mouser“ Dalies Nr.
844-IRFR9024PBF
|
Vishay Semiconductors
|
MOSFETs P-Chan 60V 8.8 Amp
|
|
5 318Prieinamumas
|
|
|
1,61 €
|
|
|
0,681 €
|
|
|
0,509 €
|
|
|
0,466 €
|
|
|
0,396 €
|
|
Min.: 1
Daugkart.: 1
|
|
|
Si
|
SMD/SMT
|
DPAK-3 (TO-252-3)
|
P-Channel
|
1 Channel
|
60 V
|
8.8 A
|
280 mOhms
|
- 20 V, 20 V
|
2 V
|
19 nC
|
- 55 C
|
+ 150 C
|
42 W
|
Enhancement
|
|
|
Tube
|
|
|
|
MOSFETs MOSFET 10ns RT A 595 -TPS1100DR A 595-TP A 595-TPS1100DR
- TPS1100D
- Texas Instruments
-
1:
2,57 €
-
2 660Prieinamumas
|
„Mouser“ Dalies Nr.
595-TPS1100D
|
Texas Instruments
|
MOSFETs MOSFET 10ns RT A 595 -TPS1100DR A 595-TP A 595-TPS1100DR
|
|
2 660Prieinamumas
|
|
|
2,57 €
|
|
|
1,20 €
|
|
|
1,01 €
|
|
|
0,903 €
|
|
Min.: 1
Daugkart.: 1
|
|
|
Si
|
SMD/SMT
|
SOIC-8
|
P-Channel
|
1 Channel
|
15 V
|
1.6 A
|
180 mOhms
|
- 15 V, 2 V
|
1.5 V
|
5.45 nC
|
- 40 C
|
+ 150 C
|
791 mW
|
Enhancement
|
|
|
Tube
|
|
|
|
MOSFETs N-Ch 650V 46A TO220-3 CoolMOS C7
- IPP65R045C7XKSA1
- Infineon Technologies
-
1:
6,76 €
-
334Prieinamumas
|
„Mouser“ Dalies Nr.
726-IPP65R045C7XKSA1
|
Infineon Technologies
|
MOSFETs N-Ch 650V 46A TO220-3 CoolMOS C7
|
|
334Prieinamumas
|
|
|
6,76 €
|
|
|
4,71 €
|
|
|
4,62 €
|
|
Min.: 1
Daugkart.: 1
|
|
|
Si
|
Through Hole
|
TO-220-3
|
N-Channel
|
1 Channel
|
650 V
|
46 A
|
40 mOhms
|
- 20 V, 20 V
|
3 V
|
93 nC
|
- 55 C
|
+ 150 C
|
227 W
|
Enhancement
|
|
CoolMOS
|
Tube
|
|
|
|
MOSFETs DiscMosfet NCh Std-VeryHiVolt TO-268AA
- IXTT1N250HV
- IXYS
-
1:
36,99 €
-
305Prieinamumas
|
„Mouser“ Dalies Nr.
747-IXTT1N250HV
|
IXYS
|
MOSFETs DiscMosfet NCh Std-VeryHiVolt TO-268AA
|
|
305Prieinamumas
|
|
Min.: 1
Daugkart.: 1
|
|
|
Si
|
SMD/SMT
|
D3PAK-3 (TO-268-3)
|
N-Channel
|
1 Channel
|
2.5 kV
|
1.5 A
|
40 Ohms
|
- 20 V, 20 V
|
2 V
|
41 nC
|
- 55 C
|
+ 150 C
|
250 W
|
Enhancement
|
|
|
Tube
|
|
|
|
MOSFETs 600V Vds 30V Vgs TO-220AB
- SIHP12N60E-GE3
- Vishay / Siliconix
-
1:
2,98 €
-
1 254Prieinamumas
|
„Mouser“ Dalies Nr.
78-SIHP12N60E-GE3
|
Vishay / Siliconix
|
MOSFETs 600V Vds 30V Vgs TO-220AB
|
|
1 254Prieinamumas
|
|
|
2,98 €
|
|
|
1,93 €
|
|
|
1,48 €
|
|
|
1,24 €
|
|
|
Peržiūrėti
|
|
|
1,07 €
|
|
|
0,972 €
|
|
Min.: 1
Daugkart.: 1
|
|
|
Si
|
Through Hole
|
TO-220-3
|
N-Channel
|
1 Channel
|
600 V
|
12 A
|
380 mOhms
|
- 30 V, 30 V
|
4 V
|
29 nC
|
- 55 C
|
+ 150 C
|
147 W
|
Enhancement
|
|
|
Tube
|
|
|
|
MOSFETs 600V Vds 30V Vgs TO-220AB
- SIHP35N60E-GE3
- Vishay Semiconductors
-
1:
5,50 €
-
760Prieinamumas
|
„Mouser“ Dalies Nr.
78-SIHP35N60E-GE3
|
Vishay Semiconductors
|
MOSFETs 600V Vds 30V Vgs TO-220AB
|
|
760Prieinamumas
|
|
|
5,50 €
|
|
|
4,21 €
|
|
|
3,41 €
|
|
|
3,03 €
|
|
|
2,67 €
|
|
Min.: 1
Daugkart.: 1
|
|
|
Si
|
Through Hole
|
TO-220-3
|
N-Channel
|
1 Channel
|
600 V
|
32 A
|
82 mOhms
|
- 30 V, 30 V
|
4 V
|
88 nC
|
- 55 C
|
+ 150 C
|
250 W
|
Enhancement
|
|
|
Tube
|
|
|
|
MOSFETs 80V Vds 20V Vgs TO-220
- SUP60030E-GE3
- Vishay Semiconductors
-
1:
3,47 €
-
1 084Prieinamumas
|
„Mouser“ Dalies Nr.
78-SUP60030E-GE3
|
Vishay Semiconductors
|
MOSFETs 80V Vds 20V Vgs TO-220
|
|
1 084Prieinamumas
|
|
|
3,47 €
|
|
|
1,78 €
|
|
|
1,61 €
|
|
|
1,57 €
|
|
|
Peržiūrėti
|
|
|
1,45 €
|
|
|
1,37 €
|
|
Min.: 1
Daugkart.: 1
|
|
|
Si
|
Through Hole
|
TO-220-3
|
N-Channel
|
1 Channel
|
80 V
|
120 A
|
2.8 mOhms
|
- 20 V, 20 V
|
2 V
|
141 nC
|
- 55 C
|
+ 175 C
|
375 W
|
Enhancement
|
|
TrenchFET
|
Tube
|
|
|
|
MOSFETs TO220 400V 5.4A N-CH MOSFET
- IRFI740GPBF
- Vishay Semiconductors
-
1:
2,53 €
-
2 516Prieinamumas
|
„Mouser“ Dalies Nr.
844-IRFI740GPBF
|
Vishay Semiconductors
|
MOSFETs TO220 400V 5.4A N-CH MOSFET
|
|
2 516Prieinamumas
|
|
|
2,53 €
|
|
|
1,41 €
|
|
|
1,40 €
|
|
|
1,20 €
|
|
Min.: 1
Daugkart.: 1
|
|
|
Si
|
Through Hole
|
TO-220-3
|
N-Channel
|
1 Channel
|
400 V
|
5.4 A
|
550 mOhms
|
- 20 V, 20 V
|
2 V
|
66 nC
|
- 55 C
|
+ 150 C
|
40 W
|
Enhancement
|
|
|
Tube
|
|
|
|
MOSFETs TO247 250V 15A N-CH MOSFET
- IRFP244PBF
- Vishay Semiconductors
-
1:
2,61 €
-
966Prieinamumas
|
„Mouser“ Dalies Nr.
844-IRFP244PBF
|
Vishay Semiconductors
|
MOSFETs TO247 250V 15A N-CH MOSFET
|
|
966Prieinamumas
|
|
|
2,61 €
|
|
|
2,01 €
|
|
|
1,77 €
|
|
|
1,48 €
|
|
|
1,29 €
|
|
Min.: 1
Daugkart.: 1
|
|
|
Si
|
Through Hole
|
TO-247-3
|
N-Channel
|
1 Channel
|
250 V
|
15 A
|
280 mOhms
|
- 20 V, 20 V
|
2 V
|
63 nC
|
- 55 C
|
+ 150 C
|
150 W
|
Enhancement
|
|
|
Tube
|
|
|
|
MOSFETs N-Chan 100V 4.3 Amp
- IRFR110PBF
- Vishay Semiconductors
-
1:
0,886 €
-
5 778Prieinamumas
|
„Mouser“ Dalies Nr.
844-IRFR110PBF
|
Vishay Semiconductors
|
MOSFETs N-Chan 100V 4.3 Amp
|
|
5 778Prieinamumas
|
|
|
0,886 €
|
|
|
0,44 €
|
|
|
0,351 €
|
|
|
0,298 €
|
|
Min.: 1
Daugkart.: 1
|
|
|
Si
|
SMD/SMT
|
DPAK-3 (TO-252-3)
|
N-Channel
|
1 Channel
|
100 V
|
4.3 A
|
540 mOhms
|
- 20 V, 20 V
|
4 V
|
8.3 nC
|
- 55 C
|
+ 150 C
|
25 W
|
Enhancement
|
|
|
Tube
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MOSFETs N-Chan 600V 1.4 Amp
- IRFR1N60APBF
- Vishay Semiconductors
-
1:
2,07 €
-
2 742Prieinamumas
|
„Mouser“ Dalies Nr.
844-IRFR1N60APBF
|
Vishay Semiconductors
|
MOSFETs N-Chan 600V 1.4 Amp
|
|
2 742Prieinamumas
|
|
|
2,07 €
|
|
|
0,776 €
|
|
|
0,672 €
|
|
|
0,571 €
|
|
Min.: 1
Daugkart.: 1
|
|
|
Si
|
SMD/SMT
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DPAK-3 (TO-252-3)
|
N-Channel
|
1 Channel
|
600 V
|
1.4 A
|
7 Ohms
|
- 30 V, 30 V
|
4 V
|
14 nC
|
- 55 C
|
+ 150 C
|
36 W
|
Enhancement
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|
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Tube
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MOSFETs Trench HiperFET Power MOSFET
- IXFT94N30T
- IXYS
-
1:
18,33 €
-
170Prieinamumas
-
120Tikėtina 2026-07-22
|
„Mouser“ Dalies Nr.
747-IXFT94N30T
|
IXYS
|
MOSFETs Trench HiperFET Power MOSFET
|
|
170Prieinamumas
120Tikėtina 2026-07-22
|
|
|
18,33 €
|
|
|
15,67 €
|
|
|
12,62 €
|
|
Min.: 1
Daugkart.: 1
|
|
|
Si
|
SMD/SMT
|
D3PAK-3 (TO-268-3)
|
N-Channel
|
1 Channel
|
300 V
|
94 A
|
36 mOhms
|
|
|
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HiPerFET
|
Tube
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MOSFETs 1000V 32A TO-264 Power MOSFET
- IXFK32N100X
- IXYS
-
1:
20,86 €
-
255Prieinamumas
|
„Mouser“ Dalies Nr.
747-IXFK32N100X
|
IXYS
|
MOSFETs 1000V 32A TO-264 Power MOSFET
|
|
255Prieinamumas
|
|
|
20,86 €
|
|
|
15,97 €
|
|
|
14,70 €
|
|
Min.: 1
Daugkart.: 1
|
|
|
Si
|
Through Hole
|
TO-264-3
|
N-Channel
|
1 Channel
|
1 kV
|
32 A
|
220 mOhms
|
- 30 V, 30 V
|
3.5 V
|
130 nC
|
- 55 C
|
+ 150 C
|
890 W
|
Enhancement
|
|
HiPerFET
|
Tube
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Lietuva
