X2-Class Power MOSFETs with HiPerFET™

IXYS X2-Class Power MOSFETs with HiPerFET™ are designed for high-efficiency and high-speed power switching applications. The Ultra-Junction X2-Class MOSFETs offer low gate charge and excellent ruggedness with a fast intrinsic diode. These MOSFETs are available in many standard industrial packages, including isolated types. Typical applications are switch-mode and resonant-mode power supplies, DC-DC converters, PFC circuits, AC and DC motor drives, and robotics and servo controls.

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Qty. RoHS ECAD modelis Technologijos
Montavimo stilius
Pakuotė / Korpusas
Tranzistoriaus poliškumas
Kanalų skaičius
Vds - nutekėjimo-šaltinio pramušimo įtampa
svar. – nuolatinio išleidimo srovė
RDS On - Drain-Source Varža
Vgs - užtūros-šaltinio įtampa
Vgs th - užtūros-šaltinio slenkstinė įtampa
Qg – vartų krūvis
Minimali darbinė temperatūra
Didžiausia darbinė temperatūra
Pd - skaidos galia
Kanalas Mode
Prekinis pavadinimas
Pakavimas
IXYS MOSFETs TO247 650V 24A N-CH X2CLASS
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586Prieinamumas
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Daugkart.: 1

Si Through Hole TO-247-3 N-Channel 1 Channel 650 V 24 A 145 mOhms - 30 V, 30 V 3 V - 55 C + 150 C 390 W Enhancement HiPerFET Tube

IXYS MOSFETs MOSFET 650V/46A Ultra Junction X2
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403Prieinamumas
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Si Through Hole TO-247-3 N-Channel 1 Channel 650 V 46 A 76 mOhms - 30 V, 30 V 2.7 V 75 nC - 55 C + 150 C 660 W Enhancement HiPerFET Tube
IXYS MOSFETs TO247 650V 62A N-CH X2CLASS
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204Prieinamumas
Min.: 1
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Si Through Hole TO-247-3 N-Channel 1 Channel 650 V 62 A 50 mOhms - 30 V, 30 V 2.7 V 100 nC - 55 C + 150 C 780 W Enhancement HiPerFET Tube
IXYS MOSFETs DiscMSFT NChUltraJnctn X2Class TO-264(3)
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240Prieinamumas
Min.: 1
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Si Through Hole TO-264-3 N-Channel 1 Channel 650 V 102 A 30 mOhms - 30 V, 30 V 3 V 152 nC - 55 C + 150 C 1.04 kW Enhancement HiPerFET Tube

IXYS MOSFETs MOSFET 650V/80A Ultra Junction X2
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851Prieinamumas
Min.: 1
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Si Through Hole TO-247-3 N-Channel 1 Channel 650 V 80 A 40 mOhms - 30 V, 30 V 2.7 V 143 nC - 55 C + 150 C 890 W Enhancement HiPerFET Tube

IXYS MOSFETs MOSFET 650V/60A Ultra Junction X2
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889Prieinamumas
Min.: 1
Daugkart.: 1
Si Through Hole TO-247-3 N-Channel 1 Channel 650 V 60 A 52 mOhms - 30 V, 30 V 2.7 V 107 nC - 55 C + 150 C 780 W Enhancement HiPerFET Tube

IXYS MOSFETs MOSFET 650V/34A Ultra Junction X2
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670Prieinamumas
Min.: 1
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Si Through Hole TO-247-3 N-Channel 1 Channel 650 V 34 A 105 mOhms - 30 V, 30 V 2.7 V 56 nC - 55 C + 150 C 540 W Enhancement HiPerFET Tube
IXYS MOSFETs MOSFET 650V/22A Ultra Junction X2
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729Prieinamumas
Min.: 1
Daugkart.: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 650 V 22 A 160 mOhms - 30 V, 30 V 2.7 V 38 nC - 55 C + 150 C 390 W Enhancement HiPerFET Tube
IXYS MOSFETs TO247 650V 80A N-CH X2CLASS
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239Prieinamumas
Min.: 1
Daugkart.: 1

Si Through Hole TO-247-3 N-Channel 1 Channel 650 V 80 A 38 mOhms - 30 V, 30 V 2.7 V 137 nC - 55 C + 150 C 890 W Enhancement HiPerFET Tube
IXYS MOSFETs 650V/80A TO-247-4L
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509Prieinamumas
Min.: 1
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Si Through Hole TO-247-4 N-Channel 1 Channel 650 V 80 A 38 mOhms - 30 V, 30 V 3.5 V 140 nC - 55 C + 150 C 890 W Enhancement HiPerFET Tube

IXYS MOSFETs PLUS247 650V 120A N-CH X2CLASS
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213Prieinamumas
Min.: 1
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Si Through Hole TO-247-3 N-Channel 1 Channel 650 V 120 A 23 mOhms - 30 V, 30 V 3 V 230 nC - 55 C + 150 C 1.25 mW Enhancement HiPerFET Tube
IXYS MOSFETs TO220 650V 8A N-CH X2CLASS
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28Prieinamumas
Min.: 1
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Si Through Hole TO-220-3 N-Channel 1 Channel 650 V 8 A 500 mOhms - 30 V, 30 V 3 V 12 nC - 55 C + 150 C 150 W Enhancement HiPerFET Tube

IXYS MOSFETs DiscMSFT NChUltraJnctn X2Class TO-264(3)
Duomenų Lapas
410Prieinamumas
Min.: 1
Daugkart.: 1

Si Through Hole TO-247-3 N-Channel 1 Channel 650 V 120 A 23 mOhms - 30 V, 30 V 3 V 230 nC - 55 C + 150 C 1.25 mW Enhancement HiPerFET Tube
IXYS MOSFETs TO247 650V 34A N-CH X2CLASS
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214Prieinamumas
Min.: 1
Daugkart.: 1

Si Through Hole TO-247-3 N-Channel 1 Channel 650 V 34 A 96 mOhms - 30 V, 30 V 3 V 54 nC - 55 C + 150 C 540 W Enhancement HiPerFET Tube
IXYS MOSFETs MOSFET 650V/150A Ultra Junction X2
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51Prieinamumas
Min.: 1
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Si Through Hole PLUS-264-3 N-Channel 1 Channel 650 V 150 A 17 mOhms - 30 V, 30 V 2.7 V 430 nC - 55 C + 150 C 1.56 kW Enhancement HiPerFET Tube
IXYS MOSFETs MOSFET 650V/100A Ultra Junction X2
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534Prieinamumas
Min.: 1
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Si Through Hole TO-264-3 N-Channel 1 Channel 650 V 100 A 30 mOhms - 30 V, 30 V 2.7 V 180 nC - 55 C + 150 C 1.04 kW Enhancement HiPerFET Tube
IXYS MOSFETs 650V/34A Ultra Junction X2-Class
Duomenų Lapas
503Prieinamumas
Min.: 1
Daugkart.: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 650 V 34 A 105 mOhms - 30 V, 30 V 2.7 V 56 nC - 55 C + 150 C 540 W Enhancement HiPerFET Tube
IXYS MOSFETs 650V/80A TO-268HV
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315Prieinamumas
Min.: 1
Daugkart.: 1

Si SMD/SMT D3PAK-3 (TO-268-3) N-Channel 1 Channel 650 V 80 A 38 mOhms - 30 V, 30 V 3.5 V 140 nC - 55 C + 150 C 890 W Enhancement HiPerFET Tube

IXYS MOSFETs MOSFET 650V/100A Ultra Junction X2
Duomenų Lapas
120Prieinamumas
Min.: 1
Daugkart.: 1

Si Through Hole TO-247-3 N-Channel 1 Channel 650 V 100 A 30 mOhms - 30 V, 30 V 2.7 V 180 nC - 55 C + 150 C 1.04 kW Enhancement HiPerFET Tube

IXYS MOSFETs MOSFET 650V/120A Ultra Junction X2
Duomenų Lapas
144Prieinamumas
Min.: 1
Daugkart.: 1

Si Through Hole TO-247-3 N-Channel 1 Channel 650 V 120 A 24 mOhms - 30 V, 30 V 2.7 V 225 nC - 55 C + 150 C 1.25 kW Enhancement HiPerFET Tube
IXYS MOSFETs TO247 650V 48A N-CH X2CLASS
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356Prieinamumas
Min.: 1
Daugkart.: 1
Si Through Hole TO-247-3 N-Channel 1 Channel 650 V 48 A 65 mOhms - 30 V, 30 V 3 V 76 nC - 55 C + 150 C 660 W Enhancement HiPerFET Tube
IXYS MOSFETs MOSFET 650V/22A Ultra Junction X2
Duomenų Lapas
41Prieinamumas
250Tikėtina 2026-09-23
Min.: 1
Daugkart.: 1

Si SMD/SMT TO-263-3 N-Channel 1 Channel 650 V 22 A 160 mOhms - 30 V, 30 V 2.7 V 38 nC - 55 C + 150 C 360 W Enhancement HiPerFET Tube

IXYS MOSFETs MOSFET 650V/22A Ultra Junction X2
Duomenų Lapas
185Prieinamumas
Min.: 1
Daugkart.: 1

Si Through Hole TO-247-3 N-Channel 1 Channel 650 V 22 A 160 mOhms - 30 V, 30 V 2.7 V 38 nC - 55 C + 150 C 390 W Enhancement HiPerFET Tube
IXYS MOSFETs 650V/12A TO-220
Duomenų Lapas
172Prieinamumas
Min.: 1
Daugkart.: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 650 V 12 A 310 mOhms - 30 V, 30 V 3 V 18.5 nC - 55 C + 150 C 180 W Enhancement HiPerFET Tube
IXYS MOSFETs 650V/22A OVERMOLDED TO-220
Duomenų Lapas
261Prieinamumas
Min.: 1
Daugkart.: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 650 V 22 A 145 mOhms - 30 V, 30 V 3.5 V 37 nC - 55 C + 150 C 37 W Enhancement HiPerFET Tube