Rezultatai: 72
Pasirinkite Vaizdas Dalies Nr. Gam. Aprašymas Duomenų Lapas Prieinamumas Kainodara (EUR) Filtruokite lentelėje pateiktus rezultatus pagal vieneto kainą, remdamiesi kiekiu. Qty. RoHS ECAD modelis Technologijos Montavimo stilius Pakuotė / Korpusas Tranzistoriaus poliškumas Kanalų skaičius Vds - nutekėjimo-šaltinio pramušimo įtampa svar. – nuolatinio išleidimo srovė RDS On - Drain-Source Varža Vgs - užtūros-šaltinio įtampa Vgs th - užtūros-šaltinio slenkstinė įtampa Qg – vartų krūvis Minimali darbinė temperatūra Didžiausia darbinė temperatūra Pd - skaidos galia Kanalas Mode Prekinis pavadinimas Pakavimas
IXYS MOSFETs DiscMSFT NChUltrJnctX3Class TO-220AB/FP 3 528Prieinamumas
Min.: 1
Daugkart.: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 200 V 72 A 20 mOhms - 20 V, 20 V 2.5 V 55 nC - 55 C + 150 C 320 W Enhancement HiPerFET Tube
IXYS MOSFETs 250V UltraJunc X3 Pwr MOSFET 939Prieinamumas
Min.: 1
Daugkart.: 1

Si Through Hole TO-264-3 N-Channel 1 Channel 250 V 240 A 4.1 mOhms - 20 V, 20 V 2.5 V 345 nC - 55 C + 150 C 1.25 kW Enhancement HiPerFET Tube

IXYS MOSFETs 250V/80A Ultra Junct ion X3-Class MOSFET 394Prieinamumas
Min.: 1
Daugkart.: 1

Si Through Hole TO-247-3 N-Channel 1 Channel 250 V 80 A 16 mOhms - 20 V, 20 V 2.5 V 83 nC - 55 C + 150 C 390 W Enhancement HiPerFET Tube

IXYS MOSFETs N-Ch 200V Enh FET 200Vdgr 300A 4mOhm 260Prieinamumas
Min.: 1
Daugkart.: 1

Si Through Hole TO-247-PLUS-3 N-Channel 1 Channel 200 V 300 A 4 mOhms - 20 V, 20 V 2.5 V 375 nC - 55 C + 150 C 1.25 mW Enhancement HiPerFET Tube
IXYS MOSFETs TO220 300V 72A N-CH X3CLASS 974Prieinamumas
Min.: 1
Daugkart.: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 300 V 72 A 19 mOhms - 20 V, 20 V 2.5 V 82 nC - 55 C + 150 C 36 W Enhancement HiPerFET Tube
IXYS MOSFETs DiscMSFT NChUltrJnctn X3Class TO-252D 661Prieinamumas
Min.: 1
Daugkart.: 1

Si SMD/SMT TO-252-3 N-Channel 1 Channel 250 V 30 A 60 mOhms - 20 V, 20 V 2.5 V 21 nC - 55 C + 150 C 170 W Enhancement HiPerFET Tube
IXYS MOSFETs TO247 250V 120A N-CH X3CLASS 1 067Prieinamumas
Min.: 1
Daugkart.: 1

Si Through Hole TO-247-3 N-Channel 1 Channel 250 V 120 A 12 mOhms - 20 V, 20 V 2.5 V 122 nC - 55 C + 150 C 480 W Enhancement HiPerFET Tube
IXYS MOSFETs N-Ch 200V Enh FET 200Vdgr 300A 4mOhm 265Prieinamumas
Min.: 1
Daugkart.: 1

Si Through Hole TO-264-3 N-Channel 1 Channel 200 V 300 A 4 mOhms - 20 V, 20 V 2.5 V 375 nC - 55 C + 150 C 1.25 kW Enhancement HiPerFET Tube
IXYS MOSFETs TO252 200V 36A N-CH X3CLASS 1 798Prieinamumas
Min.: 1
Daugkart.: 1

Si SMD/SMT TO-252-3 N-Channel 1 Channel 200 V 36 A 38 mOhms - 20 V, 20 V 2.5 V 21 nC - 55 C + 150 C 170 W Enhancement HiPerFET Tube
IXYS MOSFETs TO220 300V 56A N-CH X3CLASS 519Prieinamumas
Min.: 1
Daugkart.: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 300 V 56 A 27 mOhms - 20 V, 20 V 2.5 V 56 nC - 55 C + 150 C 320 W Enhancement HiPerFET Tube
IXYS MOSFETs TO247 300V 72A N-CH X3CLASS 235Prieinamumas
Min.: 1
Daugkart.: 1

Si Through Hole TO-247-3 N-Channel 1 Channel 300 V 72 A 19 mOhms - 30 V, 30 V 2.5 V 82 nC - 55 C + 150 C 390 W Enhancement HiPerFET Tube

IXYS MOSFETs DiscMSFT NChUltrJnctn X3Class TO-247AD 298Prieinamumas
Min.: 1
Daugkart.: 1

Si Through Hole TO-247-PLUS-3 N-Channel 1 Channel 300 V 210 A 5.5 mOhms - 20 V, 20 V 2.5 V 375 nC - 55 C + 150 C 1.25 mW Enhancement HiPerFET Tube
IXYS MOSFETs DiscMSFT NChUltrJnctn X3Class TO-252D 1 956Prieinamumas
Min.: 1
Daugkart.: 1

Si SMD/SMT TO-252-3 N-Channel 1 Channel 300 V 26 A 66 mOhms - 20 V, 20 V 2.5 V 22 nC - 55 C + 150 C 170 W Enhancement HiPerFET Tube
IXYS MOSFETs TO268 200V 220A N-CH X3CLASS 26Prieinamumas
300Tikėtina 2026-06-02
Min.: 1
Daugkart.: 1

Si SMD/SMT D3PAK-3 (TO-268-3) N-Channel 1 Channel 200 V 220 A 6.2 mOhms - 20 V, 20 V 2.5 V 204 nC - 55 C + 150 C 890 W Enhancement HiPerFET Tube

IXYS MOSFETs DiscMSFT NChUltrJnctn X3Class TO-247AD 239Prieinamumas
Min.: 1
Daugkart.: 1

Si Through Hole TO-247-PLUS-3 N-Channel 1 Channel 250 V 240 A 5 mOhms - 20 V, 20 V 2.5 V 345 nC - 55 C + 150 C 1.25 mW Enhancement HiPerFET Tube
IXYS MOSFETs DiscMSFT NChUltrJnctn X3Class TO-263D2 547Prieinamumas
Min.: 1
Daugkart.: 1

Si SMD/SMT TO-263-3 N-Channel 1 Channel 250 V 30 A 60 mOhms - 20 V, 20 V 2.5 V 21 nC - 55 C + 150 C 170 W Enhancement HiPerFET Tube
IXYS MOSFETs DiscMSFT NChUltrJnctn X3Class TO-3P (3) 292Prieinamumas
Min.: 1
Daugkart.: 1

Si Through Hole TO-3P-3 N-Channel 1 Channel 300 V 72 A 19 mOhms - 20 V, 20 V 2.5 V 82 nC - 55 C + 150 C 390 W Enhancement HiPerFET Tube
IXYS MOSFETs 200V/90A X3-Class HiPerFET 269Prieinamumas
Min.: 1
Daugkart.: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 200 V 90 A 12.8 mOhms - 20 V, 20 V 2.5 V 78 nC - 55 C + 150 C 390 W Enhancement HiPerFET Tube
IXYS MOSFETs DiscMSFT NChUltrJnctX3Class TO-220AB/FP 286Prieinamumas
Min.: 1
Daugkart.: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 250 V 30 A 60 mOhms - 20 V, 20 V 2.5 V 21 nC - 55 C + 150 C 170 W Enhancement HiPerFET Tube
IXYS MOSFETs DiscMSFT NChUltrJnctn X3Class TO-247AD 95Prieinamumas
Min.: 1
Daugkart.: 1

Si Through Hole TO-247-3 N-Channel 1 Channel 200 V 140 A 9.6 mOhms - 20 V, 20 V 2.5 V 127 nC - 55 C + 150 C 480 W Enhancement HiPerFET Tube
IXYS MOSFETs TO268 300V 120A N-CH X3CLASS 2 487Prieinamumas
Min.: 1
Daugkart.: 1

Si SMD/SMT D3PAK-3 (TO-268-3) N-Channel 1 Channel 300 V 120 A 11 mOhms - 20 V, 20 V 4.5 V 170 nC - 55 C + 150 C 735 W Enhancement HiPerFET Tube
IXYS MOSFETs DiscMSFT NChUltrJnctn X3Class TO-263D2 2 204Prieinamumas
Min.: 1
Daugkart.: 1

Si SMD/SMT TO-263-3 N-Channel 1 Channel 300 V 26 A 66 mOhms - 20 V, 20 V 2.5 V 22 nC - 55 C + 150 C 170 W Enhancement HiPerFET Tube

IXYS MOSFETs 250V/170A Ultra Junc tion X3-Class MOSFE 124Prieinamumas
Min.: 1
Daugkart.: 1

Si Through Hole TO-247-3 N-Channel 1 Channel 250 V 170 A 6.1 mOhms - 20 V, 20 V 2.5 V 190 nC - 55 C + 150 C 960 W Enhancement HiPerFET Tube
IXYS MOSFETs DiscMSFT NChUltrJnctn X3Class TO-247AD 130Prieinamumas
Min.: 1
Daugkart.: 1

Si Through Hole TO-247-3 N-Channel 1 Channel 200 V 220 A 6.2 mOhms - 20 V, 20 V 2.5 V 204 nC - 55 C + 150 C 890 W Enhancement HiPerFET Tube
IXYS MOSFETs DiscMSFT NChUltrJnctn X3Class TO-247AD 398Prieinamumas
Min.: 1
Daugkart.: 1

Si Through Hole TO-247-3 N-Channel 1 Channel 200 V 90 A 12.8 mOhms - 20 V, 20 V 2.5 V 78 nC - 55 C + 150 C 390 W Enhancement HiPerFET Tube