Intelligent Outlet Solutions

Littelfuse Intelligent Outlet Solutions components feature smart outlets and light dimmers that are controlled through apps or virtual assistance. The Littelfuse Intelligent Outlet Applications product line includes PICO® II 473 Slo-Blo® Fuses, UltraMOV 14mm Varistors, SJ SCR Switching Thyristors, Thyristor Triacs, IX4340 Gate Drivers, and 650V X2 MOSFETs. The intelligent outlets plug into or replace traditional outlets and allow users to control what is plugged into them through an app or virtual assistance. The smart light dimmers are also remotely controlled. Instead of diverting energy from the light bulb into a resistor, the modern light bulb circuit is switched off many times per second around the fluctuation of household alternating current for efficiency.

Rezultatai: 72
Pasirinkite Vaizdas Dalies Nr.
 Gam.
Aprašymas Duomenų Lapas Prieinamumas Kainodara (EUR) Filtruokite lentelėje pateiktus rezultatus pagal vieneto kainą, remdamiesi kiekiu.
Qty. RoHS ECAD modelis Technologijos
Montavimo stilius
Pakuotė / Korpusas
Tranzistoriaus poliškumas
Kanalų skaičius
Vds - nutekėjimo-šaltinio pramušimo įtampa
svar. – nuolatinio išleidimo srovė
RDS On - Drain-Source Varža
Vgs - užtūros-šaltinio įtampa
Vgs th - užtūros-šaltinio slenkstinė įtampa
Qg – vartų krūvis
Minimali darbinė temperatūra
Didžiausia darbinė temperatūra
Pd - skaidos galia
Kanalas Mode
Prekinis pavadinimas
Pakavimas
IXYS MOSFETs TO247 650V 24A N-CH X2CLASS
Duomenų Lapas
586Prieinamumas
Min.: 1
Daugkart.: 1

Si Through Hole TO-247-3 N-Channel 1 Channel 650 V 24 A 145 mOhms - 30 V, 30 V 3 V - 55 C + 150 C 390 W Enhancement HiPerFET Tube
IXYS MOSFETs TO247 650V 80A N-CH X2CLASS
Duomenų Lapas
239Prieinamumas
Min.: 1
Daugkart.: 1

Si Through Hole TO-247-3 N-Channel 1 Channel 650 V 80 A 38 mOhms - 30 V, 30 V 2.7 V 137 nC - 55 C + 150 C 890 W Enhancement HiPerFET Tube

IXYS MOSFETs MOSFET 650V/34A Ultra Junction X2
Duomenų Lapas
705Prieinamumas
Min.: 1
Daugkart.: 1

Si Through Hole TO-247-3 N-Channel 1 Channel 650 V 34 A 105 mOhms - 30 V, 30 V 2.7 V 56 nC - 55 C + 150 C 540 W Enhancement HiPerFET Tube

IXYS MOSFETs MOSFET 650V/46A Ultra Junction X2
Duomenų Lapas
403Prieinamumas
Min.: 1
Daugkart.: 1
Si Through Hole TO-247-3 N-Channel 1 Channel 650 V 46 A 76 mOhms - 30 V, 30 V 2.7 V 75 nC - 55 C + 150 C 660 W Enhancement HiPerFET Tube
IXYS MOSFETs TO247 650V 62A N-CH X2CLASS
Duomenų Lapas
206Prieinamumas
Min.: 1
Daugkart.: 1

Si Through Hole TO-247-3 N-Channel 1 Channel 650 V 62 A 50 mOhms - 30 V, 30 V 2.7 V 100 nC - 55 C + 150 C 780 W Enhancement HiPerFET Tube
IXYS MOSFETs TO264 650V 102A N-CH X2CLASS
Duomenų Lapas
251Prieinamumas
Min.: 1
Daugkart.: 1

Si Through Hole TO-264-3 N-Channel 1 Channel 650 V 102 A 30 mOhms - 30 V, 30 V 3 V 152 nC - 55 C + 150 C 1.04 kW Enhancement HiPerFET Tube

IXYS MOSFETs PLUS247 650V 120A N-CH X2CLASS
Duomenų Lapas
213Prieinamumas
Min.: 1
Daugkart.: 1

Si Through Hole TO-247-3 N-Channel 1 Channel 650 V 120 A 23 mOhms - 30 V, 30 V 3 V 230 nC - 55 C + 150 C 1.25 mW Enhancement HiPerFET Tube

IXYS MOSFETs MOSFET 650V/60A Ultra Junction X2
Duomenų Lapas
889Prieinamumas
Min.: 1
Daugkart.: 1
Si Through Hole TO-247-3 N-Channel 1 Channel 650 V 60 A 52 mOhms - 30 V, 30 V 2.7 V 107 nC - 55 C + 150 C 780 W Enhancement HiPerFET Tube

IXYS MOSFETs TO264 650V 120A N-CH X2CLASS
Duomenų Lapas
410Prieinamumas
Min.: 1
Daugkart.: 1

Si Through Hole TO-247-3 N-Channel 1 Channel 650 V 120 A 23 mOhms - 30 V, 30 V 3 V 230 nC - 55 C + 150 C 1.25 mW Enhancement HiPerFET Tube
IXYS MOSFETs TO220 650V 8A N-CH X2CLASS
Duomenų Lapas
28Prieinamumas
Min.: 1
Daugkart.: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 650 V 8 A 500 mOhms - 30 V, 30 V 3 V 12 nC - 55 C + 150 C 150 W Enhancement HiPerFET Tube
IXYS MOSFETs MOSFET 650V/150A Ultra Junction X2
Duomenų Lapas
51Prieinamumas
Min.: 1
Daugkart.: 1

Si Through Hole PLUS-264-3 N-Channel 1 Channel 650 V 150 A 17 mOhms - 30 V, 30 V 2.7 V 430 nC - 55 C + 150 C 1.56 kW Enhancement HiPerFET Tube
IXYS MOSFETs TO247 650V 34A N-CH X2CLASS
Duomenų Lapas
214Prieinamumas
Min.: 1
Daugkart.: 1

Si Through Hole TO-247-3 N-Channel 1 Channel 650 V 34 A 96 mOhms - 30 V, 30 V 3 V 54 nC - 55 C + 150 C 540 W Enhancement HiPerFET Tube
IXYS MOSFETs 650V/80A TO-247-4L
Duomenų Lapas
509Prieinamumas
Min.: 1
Daugkart.: 1

Si Through Hole TO-247-4 N-Channel 1 Channel 650 V 80 A 38 mOhms - 30 V, 30 V 3.5 V 140 nC - 55 C + 150 C 890 W Enhancement HiPerFET Tube

IXYS MOSFETs MOSFET 650V/80A Ultra Junction X2
Duomenų Lapas
861Prieinamumas
Min.: 1
Daugkart.: 1

Si Through Hole TO-247-3 N-Channel 1 Channel 650 V 80 A 40 mOhms - 30 V, 30 V 2.7 V 143 nC - 55 C + 150 C 890 W Enhancement HiPerFET Tube
IXYS MOSFETs MOSFET 650V/100A Ultra Junction X2
Duomenų Lapas
534Prieinamumas
Min.: 1
Daugkart.: 1

Si Through Hole TO-264-3 N-Channel 1 Channel 650 V 100 A 30 mOhms - 30 V, 30 V 2.7 V 180 nC - 55 C + 150 C 1.04 kW Enhancement HiPerFET Tube
IXYS MOSFETs 650V/80A TO-268HV
Duomenų Lapas
331Prieinamumas
Min.: 1
Daugkart.: 1

Si SMD/SMT D3PAK-3 (TO-268-3) N-Channel 1 Channel 650 V 80 A 38 mOhms - 30 V, 30 V 3.5 V 140 nC - 55 C + 150 C 890 W Enhancement HiPerFET Tube

IXYS MOSFETs MOSFET 650V/100A Ultra Junction X2
Duomenų Lapas
120Prieinamumas
Min.: 1
Daugkart.: 1

Si Through Hole TO-247-3 N-Channel 1 Channel 650 V 100 A 30 mOhms - 30 V, 30 V 2.7 V 180 nC - 55 C + 150 C 1.04 kW Enhancement HiPerFET Tube

IXYS MOSFETs MOSFET 650V/120A Ultra Junction X2
Duomenų Lapas
154Prieinamumas
Min.: 1
Daugkart.: 1

Si Through Hole TO-247-3 N-Channel 1 Channel 650 V 120 A 24 mOhms - 30 V, 30 V 2.7 V 225 nC - 55 C + 150 C 1.25 kW Enhancement HiPerFET Tube
IXYS MOSFETs TO247 650V 48A N-CH X2CLASS
Duomenų Lapas
356Prieinamumas
Min.: 1
Daugkart.: 1
Si Through Hole TO-247-3 N-Channel 1 Channel 650 V 48 A 65 mOhms - 30 V, 30 V 3 V 76 nC - 55 C + 150 C 660 W Enhancement HiPerFET Tube
IXYS MOSFETs MOSFET 650V/22A Ultra Junction X2
Duomenų Lapas
41Prieinamumas
250Tikėtina 2026-09-23
Min.: 1
Daugkart.: 1

Si SMD/SMT TO-263-3 N-Channel 1 Channel 650 V 22 A 160 mOhms - 30 V, 30 V 2.7 V 38 nC - 55 C + 150 C 360 W Enhancement HiPerFET Tube

IXYS MOSFETs MOSFET 650V/22A Ultra Junction X2
Duomenų Lapas
185Prieinamumas
Min.: 1
Daugkart.: 1

Si Through Hole TO-247-3 N-Channel 1 Channel 650 V 22 A 160 mOhms - 30 V, 30 V 2.7 V 38 nC - 55 C + 150 C 390 W Enhancement HiPerFET Tube
IXYS MOSFETs 650V/12A TO-220
Duomenų Lapas
172Prieinamumas
Min.: 1
Daugkart.: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 650 V 12 A 310 mOhms - 30 V, 30 V 3 V 18.5 nC - 55 C + 150 C 180 W Enhancement HiPerFET Tube
IXYS MOSFETs MOSFET 650V/22A Ultra Junction X2
Duomenų Lapas
739Prieinamumas
Min.: 1
Daugkart.: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 650 V 22 A 160 mOhms - 30 V, 30 V 2.7 V 38 nC - 55 C + 150 C 390 W Enhancement HiPerFET Tube
IXYS MOSFETs 650V/22A OVERMOLDED TO-220
Duomenų Lapas
263Prieinamumas
Min.: 1
Daugkart.: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 650 V 22 A 145 mOhms - 30 V, 30 V 3.5 V 37 nC - 55 C + 150 C 37 W Enhancement HiPerFET Tube
IXYS MOSFETs 650V/34A Ultra Junction X2-Class
Duomenų Lapas
203Prieinamumas
300Tikėtina 2026-03-27
Min.: 1
Daugkart.: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 650 V 34 A 105 mOhms - 30 V, 30 V 2.7 V 56 nC - 55 C + 150 C 540 W Enhancement HiPerFET Tube