TK100A10N1,S4X
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Žr. produkto specifikacijas
Žr. produkto specifikacijas
757-TK100A10N1S4X
TK100A10N1,S4X
Gam.:
Aprašymas:
MOSFETs MOSFET NCh 3.1ohm VGS10V10uAVDS100V
MOSFETs MOSFET NCh 3.1ohm VGS10V10uAVDS100V
Duomenų Lapas:
Prieinamumas: 141
-
Turime sandėlyje:
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141 Galime išsiųsti iš kartoĮvyko netikėta klaida. Prašome pabandyti vėliau.
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Gamintojo numatytas pristatymo laikas
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20 Savaičių Apytikriai apskaičiuotas gamybos laikas gamykloje, jei dalių kiekis didesnis nei nurodyta.
Kainodara (EUR)
| Qty. | Vieneto kaina |
Plėt. Kaina
|
|---|---|---|
| 4,82 € | 4,82 € | |
| 2,55 € | 25,50 € | |
| 2,37 € | 237,00 € | |
| 1,99 € | 995,00 € |
Duomenų Lapas
Application Notes
- Impacts of the dv/dt Rate on MOSFETs
- Impacts of the dv/dt Rate on MOSFETs
- MOSFET Avalanche Ruggedness
- MOSFET Avalanche Ruggedness
- MOSFET Gate Driver Circuit
- MOSFET Gate Driver Circuit
- MOSFET Parallening (Parasitic Oscillation Between Parallel Power MOSFETs)
- MOSFET Parallening (Parasitic Oscillation Between Parallel Power MOSFETs)
- Parasitic Oscillation and Ringing of Power MOSFETs
- Parasitic Oscillation and Ringing of Power MOSFETs
- Power MOSFET Electrical Characteristics
- Power MOSFET Electrical Characteristics
- Power MOSFET Maximum Ratings
- Power MOSFET Maximum Ratings
- Power MOSFET Selecting MOSFETs and Consideration for Circuit Design
- Power MOSFET Selecting MOSFETs and Consideration for Circuit Design
- Power MOSFET Structure and Characteristics
- Power MOSFET Structure and Characteristics
- Power MOSFET Thermal Design and Attachment of a Thermal Fin
- Power MOSFET Thermal Design and Attachment of a Thermal Fin
Models
Product Catalogs
Test/Quality Data
- TARIC:
- 8541290000
- CNHTS:
- 8541290000
- CAHTS:
- 8541290000
- USHTS:
- 8541290065
- JPHTS:
- 8541290100
- KRHTS:
- 8541299000
- MXHTS:
- 85412999
- ECCN:
- EAR99
