|
|
Igbt Moduliai 950 V, 600 A 3-level IGBT module
- F3L600R10W4S7FC22BPSA1
- Infineon Technologies
-
1:
207,31 €
-
11Prieinamumas
|
„Mouser“ Dalies Nr.
726-R10W4S7FC22BPSA1
|
Infineon Technologies
|
Igbt Moduliai 950 V, 600 A 3-level IGBT module
|
|
11Prieinamumas
|
|
Min.: 1
Daugkart.: 1
|
|
|
|
|
|
|
|
|
|
|
|
|
Tray
|
|
|
|
Igbt Moduliai IGBT Module 50A 600V
- FS50R06W1E3_B11
- Infineon Technologies
-
1:
28,14 €
-
264Prieinamumas
|
„Mouser“ Dalies Nr.
641-FS50R06W1E3_B11
|
Infineon Technologies
|
Igbt Moduliai IGBT Module 50A 600V
|
|
264Prieinamumas
|
|
Min.: 1
Daugkart.: 1
|
|
|
IGBT Modules
|
6-Pack
|
600 V
|
1.45 V
|
70 A
|
400 nA
|
205 W
|
Module
|
- 40 C
|
+ 150 C
|
Tray
|
|
|
|
Igbt Moduliai 1200 V, 100 A sixpack IGBT module
- FS100R12W2T7BOMA1
- Infineon Technologies
-
1:
58,50 €
-
156Prieinamumas
|
„Mouser“ Dalies Nr.
726-FS100R12W2T7BOMA
|
Infineon Technologies
|
Igbt Moduliai 1200 V, 100 A sixpack IGBT module
|
|
156Prieinamumas
|
|
Min.: 1
Daugkart.: 1
|
|
|
IGBT Silicon Modules
|
6-Pack
|
1.2 kV
|
1.5 V
|
70 A
|
100 nA
|
|
|
- 40 C
|
+ 175 C
|
Tray
|
|
|
|
Igbt Moduliai 1200 V, 35 A sixpack IGBT module
- FS35R12W1T7BOMA1
- Infineon Technologies
-
1:
30,13 €
-
19Prieinamumas
|
„Mouser“ Dalies Nr.
726-FS35R12W1T7BOMA1
|
Infineon Technologies
|
Igbt Moduliai 1200 V, 35 A sixpack IGBT module
|
|
19Prieinamumas
|
|
|
30,13 €
|
|
|
23,55 €
|
|
|
21,20 €
|
|
Min.: 1
Daugkart.: 1
|
|
|
IGBT Silicon Modules
|
6-Pack
|
1.2 kV
|
1.6 V
|
35 A
|
100 nA
|
|
|
- 40 C
|
+ 175 C
|
Tray
|
|
|
|
Igbt Moduliai 1200 V, 25 A sixpack IGBT module
- FS25R12W1T7PB11BPSA1
- Infineon Technologies
-
1:
30,93 €
-
87Prieinamumas
|
„Mouser“ Dalies Nr.
726-FS25R12W1T7PB111
|
Infineon Technologies
|
Igbt Moduliai 1200 V, 25 A sixpack IGBT module
|
|
87Prieinamumas
|
|
|
30,93 €
|
|
|
24,36 €
|
|
|
23,30 €
|
|
Min.: 1
Daugkart.: 1
|
|
|
IGBT Silicon Modules
|
6-Pack
|
1.2 kV
|
1.6 V
|
25 A
|
100 nA
|
|
|
- 40 C
|
+ 175 C
|
Tray
|
|
|
|
Igbt Moduliai IGBT 1200V 50A
- FS50R12W2T4
- Infineon Technologies
-
1:
38,26 €
-
30Prieinamumas
|
„Mouser“ Dalies Nr.
641-FS50R12W2T4
|
Infineon Technologies
|
Igbt Moduliai IGBT 1200V 50A
|
|
30Prieinamumas
|
|
Min.: 1
Daugkart.: 1
|
|
|
IGBT Modules
|
6-Pack
|
1.2 kV
|
1.85 V
|
83 A
|
100 nA
|
335 W
|
Module
|
- 40 C
|
+ 150 C
|
Tray
|
|
|
|
Igbt Moduliai 650 V, 100 A booster IGBT module
- DF100R07W1H5FPB54BPSA2
- Infineon Technologies
-
1:
31,52 €
-
30Prieinamumas
|
„Mouser“ Dalies Nr.
726-DFW1H5FPB54BPSA2
|
Infineon Technologies
|
Igbt Moduliai 650 V, 100 A booster IGBT module
|
|
30Prieinamumas
|
|
|
31,52 €
|
|
|
24,91 €
|
|
|
23,87 €
|
|
Min.: 1
Daugkart.: 1
|
|
|
SiC IGBT Modules
|
Dual
|
650 V
|
1.35 V
|
40 A
|
100 nA
|
|
Module
|
- 40 C
|
+ 150 C
|
Tray
|
|
|
|
Igbt Moduliai N-CH 600V 100A
- F4-75R06W1E3
- Infineon Technologies
-
1:
30,87 €
-
Ne Sandėlyje Esančių Prekių Pristatymo Laikas 13 Savaičių
-
Netinkama eksploatuoti
|
„Mouser“ Dalies Nr.
641-F4-75R06W1E3
Netinkama eksploatuoti
|
Infineon Technologies
|
Igbt Moduliai N-CH 600V 100A
|
|
Ne Sandėlyje Esančių Prekių Pristatymo Laikas 13 Savaičių
|
|
Min.: 1
Daugkart.: 1
|
|
|
IGBT Silicon Modules
|
4-Pack
|
600 V
|
1.45 V
|
100 A
|
400 nA
|
275 W
|
EASY1B
|
- 40 C
|
+ 150 C
|
Tray
|
|
|
|
Igbt Moduliai EASY PLUS
- F3L500R12W3H7H11BPSA1
- Infineon Technologies
-
1:
117,91 €
-
14Prieinamumas
-
Naujas Produktas
|
„Mouser“ Dalies Nr.
726-F3L500R12W3H7H11
Naujas Produktas
|
Infineon Technologies
|
Igbt Moduliai EASY PLUS
|
|
14Prieinamumas
|
|
|
117,91 €
|
|
|
103,04 €
|
|
|
98,13 €
|
|
Min.: 1
Daugkart.: 1
|
|
|
EasyPACK Module
|
|
1.2 kV
|
2.23 V
|
325 A
|
100 nA
|
20 mW
|
56.7 mm x 48 mm x 12 mm
|
- 40 C
|
+ 175 C
|
Tray
|
|
|
|
Igbt Moduliai EASY
- FS3L40R07W2H5FB70BPSA1
- Infineon Technologies
-
1:
68,98 €
-
10Prieinamumas
-
Naujas Produktas
|
„Mouser“ Dalies Nr.
726-FS3L40R07W2H5FB7
Naujas Produktas
|
Infineon Technologies
|
Igbt Moduliai EASY
|
|
10Prieinamumas
|
|
Min.: 1
Daugkart.: 1
|
|
|
|
|
|
|
|
|
|
|
|
|
Tray
|
|
|
|
Igbt Moduliai EASY
- F3L200R07W2S5PB95BPSA1
- Infineon Technologies
-
1:
63,07 €
-
36Prieinamumas
-
"Mouser Naujiena"
|
„Mouser“ Dalies Nr.
726-F3L200R07W2S5PB5
"Mouser Naujiena"
|
Infineon Technologies
|
Igbt Moduliai EASY
|
|
36Prieinamumas
|
|
Min.: 1
Daugkart.: 1
|
|
|
|
|
|
|
|
|
|
|
|
|
Tray
|
|
|
|
Igbt Moduliai EASY
- F3L75R07W2S5PB96BPSA1
- Infineon Technologies
-
1:
61,77 €
-
36Prieinamumas
-
"Mouser Naujiena"
|
„Mouser“ Dalies Nr.
726-F3L75R07W2S5PB96
"Mouser Naujiena"
|
Infineon Technologies
|
Igbt Moduliai EASY
|
|
36Prieinamumas
|
|
Min.: 1
Daugkart.: 1
|
|
|
|
|
|
|
|
|
|
|
|
|
Tray
|
|
|
|
Igbt Moduliai EASY
- FS3L40R12W2H7PB11BPSA1
- Infineon Technologies
-
1:
61,90 €
-
13Prieinamumas
-
"Mouser Naujiena"
|
„Mouser“ Dalies Nr.
726-FS3L40R12W2H7PB1
"Mouser Naujiena"
|
Infineon Technologies
|
Igbt Moduliai EASY
|
|
13Prieinamumas
|
|
Min.: 1
Daugkart.: 1
|
|
|
EasyPACK 2B Module
|
|
1.2 kV
|
2.25 V
|
25 A
|
100 nA
|
20 mW
|
56.7 mm x 48 mm x 12 mm
|
- 40 C
|
+ 175 C
|
Tray
|
|
|
|
Igbt Moduliai IGBT 1200V 50A
- FS50R12W2T4_B11
- Infineon Technologies
-
1:
38,26 €
-
43Prieinamumas
|
„Mouser“ Dalies Nr.
641-FS50R12W2T4_B11
|
Infineon Technologies
|
Igbt Moduliai IGBT 1200V 50A
|
|
43Prieinamumas
|
|
|
38,26 €
|
|
|
34,64 €
|
|
|
30,35 €
|
|
Min.: 1
Daugkart.: 1
|
|
|
IGBT Modules
|
6-Pack
|
1.2 kV
|
1.85 V
|
83 A
|
100 nA
|
335 W
|
|
- 40 C
|
+ 150 C
|
Tray
|
|
|
|
Igbt Moduliai IGBT 1200V 75A
- FS75R12W2T4
- Infineon Technologies
-
1:
46,65 €
-
36Prieinamumas
|
„Mouser“ Dalies Nr.
641-FS75R12W2T4
|
Infineon Technologies
|
Igbt Moduliai IGBT 1200V 75A
|
|
36Prieinamumas
|
|
|
46,65 €
|
|
|
40,89 €
|
|
|
38,74 €
|
|
Min.: 1
Daugkart.: 1
|
|
|
IGBT Modules
|
6-Pack
|
1.2 kV
|
1.85 V
|
107 A
|
100 nA
|
375 W
|
|
- 40 C
|
+ 150 C
|
Tray
|
|
|
|
Igbt Moduliai 1200 V, 25 A 3-level IGBT module
- F3L25R12W1T4B27BOMA1
- Infineon Technologies
-
1:
28,50 €
-
335Prieinamumas
|
„Mouser“ Dalies Nr.
726-F3L25R12W1T4B27B
|
Infineon Technologies
|
Igbt Moduliai 1200 V, 25 A 3-level IGBT module
|
|
335Prieinamumas
|
|
Min.: 1
Daugkart.: 1
|
|
|
IGBT Silicon Modules
|
3-Phase Inverter
|
1.2 kV
|
1.85 V
|
25 A
|
100 nA
|
215 W
|
EasyPack1B
|
- 40 C
|
+ 150 C
|
Tray
|
|
|
|
Igbt Moduliai N-CH 600V 45A
- FS30R06W1E3
- Infineon Technologies
-
1:
23,03 €
-
280Prieinamumas
|
„Mouser“ Dalies Nr.
641-FS30R06W1E3
|
Infineon Technologies
|
Igbt Moduliai N-CH 600V 45A
|
|
280Prieinamumas
|
|
Min.: 1
Daugkart.: 1
|
|
|
IGBT Silicon Modules
|
6-Pack
|
600 V
|
1.55 V
|
45 A
|
400 nA
|
150 W
|
EASY1B
|
- 40 C
|
+ 150 C
|
Tray
|
|
|
|
Igbt Moduliai 1200 V, 120 A booster IGBT module
- DF120R12W2H3_B27
- Infineon Technologies
-
1:
36,83 €
-
6Prieinamumas
-
Netinkama eksploatuoti
|
„Mouser“ Dalies Nr.
641-DF120R12W2H3_B27
Netinkama eksploatuoti
|
Infineon Technologies
|
Igbt Moduliai 1200 V, 120 A booster IGBT module
|
|
6Prieinamumas
|
|
Min.: 1
Daugkart.: 1
|
|
|
IGBT Silicon Modules
|
3-Phase Inverter
|
1.2 kV
|
2.05 V
|
50 A
|
100 nA
|
180 W
|
|
- 40 C
|
+ 150 C
|
Tray
|
|
|
|
Igbt Moduliai 650 V, 30 A 3-level IGBT module
- FS3L30R07W2H3FB11BPSA2
- Infineon Technologies
-
1:
43,68 €
-
14Prieinamumas
-
Netinkama eksploatuoti
|
„Mouser“ Dalies Nr.
726-FS3L30R07W2H3FB1
Netinkama eksploatuoti
|
Infineon Technologies
|
Igbt Moduliai 650 V, 30 A 3-level IGBT module
|
|
14Prieinamumas
|
|
Min.: 1
Daugkart.: 1
|
|
|
SiC IGBT Modules
|
3-Phase Inverter
|
650 V
|
1.5 V
|
30 A
|
100 nA
|
|
Module
|
- 40 C
|
+ 150 C
|
Tray
|
|
|
|
Igbt Moduliai 1200 V, 160 A booster IGBT module
- DF160R12W2H3F_B11
- Infineon Technologies
-
1:
75,77 €
-
13Prieinamumas
|
„Mouser“ Dalies Nr.
641-DF160R12W2H3FB11
|
Infineon Technologies
|
Igbt Moduliai 1200 V, 160 A booster IGBT module
|
|
13Prieinamumas
|
|
|
75,77 €
|
|
|
69,93 €
|
|
|
69,92 €
|
|
Min.: 1
Daugkart.: 1
|
|
|
SiC IGBT Modules
|
Quad
|
1.2 kV
|
1.55 V
|
20 A
|
100 nA
|
20 mW
|
Module
|
- 40 C
|
+ 150 C
|
Tray
|
|
|
|
Igbt Moduliai 1200 V, 100 A 3-level IGBT module
- F3L100R12W2H3_B11
- Infineon Technologies
-
1:
46,79 €
-
14Prieinamumas
|
„Mouser“ Dalies Nr.
641-F3L100R12W2H3_B1
|
Infineon Technologies
|
Igbt Moduliai 1200 V, 100 A 3-level IGBT module
|
|
14Prieinamumas
|
|
Min.: 1
Daugkart.: 1
|
|
|
IGBT Silicon Modules
|
3-Phase Inverter
|
1.2 kV
|
1.55 V
|
50 A
|
100 nA
|
375 W
|
|
- 40 C
|
+ 150 C
|
Tray
|
|
|
|
Igbt Moduliai IGBT MODULES 650V 150A
- F3L150R07W2E3_B11
- Infineon Technologies
-
1:
67,03 €
-
19Prieinamumas
|
„Mouser“ Dalies Nr.
641-F3L150R07W2E3B11
|
Infineon Technologies
|
Igbt Moduliai IGBT MODULES 650V 150A
|
|
19Prieinamumas
|
|
Min.: 1
Daugkart.: 1
|
|
|
IGBT Modules
|
3-Phase Inverter
|
650 V
|
1.45 V
|
150 A
|
400 nA
|
335 W
|
Module
|
- 40 C
|
+ 150 C
|
Tray
|
|
|
|
Igbt Moduliai 1200 V, 200 A 3-level IGBT module
- F3L200R12W2H3_B11
- Infineon Technologies
-
1:
57,70 €
-
21Prieinamumas
|
„Mouser“ Dalies Nr.
641-F3L200R12W2H3_B1
|
Infineon Technologies
|
Igbt Moduliai 1200 V, 200 A 3-level IGBT module
|
|
21Prieinamumas
|
|
Min.: 1
Daugkart.: 1
|
|
|
IGBT Silicon Modules
|
3-Phase Inverter
|
1.2 kV
|
1.55 V
|
200 A
|
100 nA
|
600 W
|
|
- 40 C
|
+ 150 C
|
Tray
|
|
|
|
Igbt Moduliai IGBT MODULES 650V 75A
- F3L75R07W2E3_B11
- Infineon Technologies
-
1:
37,67 €
-
Ne Sandėlyje Esančių Prekių Pristatymo Laikas 10 Savaičių
|
„Mouser“ Dalies Nr.
641-F3L75R07W2E3_B11
|
Infineon Technologies
|
Igbt Moduliai IGBT MODULES 650V 75A
|
|
Ne Sandėlyje Esančių Prekių Pristatymo Laikas 10 Savaičių
|
|
Min.: 1
Daugkart.: 1
|
|
|
IGBT Modules
|
3-Phase Inverter
|
650 V
|
1.45 V
|
95 A
|
400 nA
|
250 W
|
|
- 40 C
|
+ 150 C
|
Tray
|
|
|
|
Igbt Moduliai 1200 V, 75 A 3-level IGBT module
- F3L75R12W1H3_B27
- Infineon Technologies
-
1:
26,19 €
-
48Prieinamumas
|
„Mouser“ Dalies Nr.
641-F3L75R12W1H3_B27
|
Infineon Technologies
|
Igbt Moduliai 1200 V, 75 A 3-level IGBT module
|
|
48Prieinamumas
|
|
Min.: 1
Daugkart.: 1
|
|
|
IGBT Silicon Modules
|
3-Phase Inverter
|
1.2 kV
|
1.45 V
|
45 A
|
100 nA
|
275 W
|
EasyPack1B
|
- 40 C
|
+ 150 C
|
Tray
|
|