750V TRENCHSTOP™ IGBT7 H7 Discrete Transistors

Infineon 750V TRENCHSTOP™ IGBT7 H7 Discrete Transistors feature a DTO247 package and replace multiple lower-current transistors in standard TO247 packages connected in parallel. The DTO247 package is twice the size of a standard TO247 and is compatible with DTO247- and TO247-based architectures within the same system for improved flexibility and customization. The TRENCHSTOP DTO247 design enables high power density while bridging the gap between TO247-based designs and module architectures. The 2mm wide leads provide optimal conduction, while the 10mm creepage distance offers enhanced safety and reliability. The package includes a 7mm pin-to-pin clearance and an integrated Kelvin emitter pin for faster, more efficient switching. These 750V transistors from Infineon are designed to simplify and shorten the development time of cost-effective, scalable architectures for high-current applications, including solar inverters, energy storage systems (ESS), and uninterruptible power supplies (UPS).

Rezultatai: 2
Pasirinkite Vaizdas Dalies Nr. Gam. Aprašymas Duomenų Lapas Prieinamumas Kainodara (EUR) Filtruokite lentelėje pateiktus rezultatus pagal vieneto kainą, remdamiesi kiekiu. Qty. RoHS ECAD modelis Technologijos Pakuotė / Korpusas Montavimo stilius Configuration Collector- Emitter Voltage VCEO Max Kolektoriaus ir Emiterio Stoties Įtampa Didžiausia vartų emiterio įtampa Nuolatinė kolektoriaus srovė esant 25 C Pd - skaidos galia Minimali darbinė temperatūra Didžiausia darbinė temperatūra Pakavimas
Infineon Technologies IGBT High speed and low saturation voltage 750 V TRENCHSTOP IGBT7 technology 200Prieinamumas
Min.: 1
Daugkart.: 1

Si TO-247-4 Through Hole Single 750 V 1.45 V 20 V 160 A 625 W - 40 C + 175 C Tube
Infineon Technologies IGBT High speed and low saturation voltage 750 V TRENCHSTOP IGBT7 technology 200Prieinamumas
Min.: 1
Daugkart.: 1

Si TO-247-4 Through Hole Single 750 V 1.45 V 20 V 160 A 500 W - 40 C + 175 C Tube