High-Temperature Products

Vishay offers high-temperature resistors, capacitors, inductors, and semiconductors. In oil and gas drilling, the instrumentation is exposed to harsh environments, including extreme temperatures, pressure, moisture, shock, and vibration. Once commissioned, the instrumentation must be relied upon to function for 5 to 10 years, and be powered at very high temperatures with no maintenance. The components used for this instrumentation must be able to withstand these harsh conditions while maintaining accuracy. Failure of the data would necessitate its removal for repairs, causing costly delays. Vishay helps to avoid this possibility by offering several high-reliability and high-precision resistors, capacitors, inductors, and semiconductors.

Rezultatai: 12
Pasirinkite Vaizdas Dalies Nr. Gam. Aprašymas Duomenų Lapas Prieinamumas Kainodara (EUR) Filtruokite lentelėje pateiktus rezultatus pagal vieneto kainą, remdamiesi kiekiu. Qty. RoHS ECAD modelis Technologijos Montavimo stilius Pakuotė / Korpusas Tranzistoriaus poliškumas Kanalų skaičius Vds - nutekėjimo-šaltinio pramušimo įtampa svar. – nuolatinio išleidimo srovė RDS On - Drain-Source Varža Vgs - užtūros-šaltinio įtampa Vgs th - užtūros-šaltinio slenkstinė įtampa Qg – vartų krūvis Minimali darbinė temperatūra Didžiausia darbinė temperatūra Pd - skaidos galia Kanalas Mode Pakavimas
Vishay Semiconductors MOSFETs TO220 600V 5.5A N-CH MOSFET 5 252Prieinamumas
Min.: 1
Daugkart.: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 600 V 5.5 A 750 mOhms - 30 V, 30 V 2 V 49 nC - 55 C + 150 C 60 W Enhancement Tube
Vishay Semiconductors MOSFETs TO220 800V 1.4A N-CH MOSFET 2 175Prieinamumas
Min.: 1
Daugkart.: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 800 V 1.4 A 6.5 Ohms - 20 V, 20 V 2 V 38 nC - 55 C + 150 C 30 W Enhancement Tube
Vishay Semiconductors MOSFETs TO220 600V 1.7A N-CH 791Prieinamumas
Min.: 1
Daugkart.: 1

Si Tube
Vishay Semiconductors MOSFETs TO220 500V 6.6A N-CH MOSFET 1 039Prieinamumas
Min.: 1
Daugkart.: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 500 V 6.6 A 520 mOhms - 30 V, 30 V 2 V 52 nC - 55 C + 150 C 60 W Enhancement Tube
Vishay Semiconductors MOSFETs TO220 900V 1.9A N-CH MOSFET 1 956Prieinamumas
Min.: 1
Daugkart.: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 900 V 1.9 A 3.7 Ohms - 20 V, 20 V 2 V 78 nC - 55 C + 150 C 35 W Enhancement Tube
Vishay Semiconductors MOSFETs N-Chan 600V 2.0 Amp 7 212Prieinamumas
Min.: 1
Daugkart.: 1
Reel: 3 000

Si SMD/SMT DPAK-3 (TO-252-3) N-Channel 1 Channel 600 V 2 A 4.4 Ohms - 20 V, 20 V 4 V 18 nC - 55 C + 150 C 42 W Enhancement Reel, Cut Tape, MouseReel
Vishay Semiconductors MOSFETs TO252 600V 2A N-CH 2 588Prieinamumas
3 000Tikėtina 2026-04-06
Min.: 1
Daugkart.: 1

Si SMD/SMT DPAK-3 (TO-252-3) N-Channel 1 Channel 600 V 2 A 4.4 Ohms - 20 V, 20 V 2 V 18 nC - 55 C + 150 C 42 W Enhancement Tube
Vishay Semiconductors MOSFETs TO252 600V 2A N-CH MOSFET 2 594Prieinamumas
Min.: 1
Daugkart.: 1
Reel: 2 000

Si SMD/SMT DPAK-3 (TO-252-3) N-Channel 1 Channel 600 V 2 A 4.4 Ohms - 20 V, 20 V 4 V 18 nC - 55 C + 150 C 42 W Enhancement Reel, Cut Tape, MouseReel
Vishay Semiconductors MOSFETs TO220 800V 2.1A N-CH MOSFET 715Prieinamumas
Min.: 1
Daugkart.: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 800 V 2.1 A 3 Ohms - 20 V, 20 V 2 V 78 nC - 55 C + 150 C 35 W Enhancement Tube
Vishay Semiconductors MOSFETs TO220 900V 1.2A N-CH MOSFET 515Prieinamumas
Min.: 1
Daugkart.: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 900 V 1.2 A 8 Ohms - 20 V, 20 V 2 V 38 nC - 55 C + 150 C 30 W Enhancement Tube
Vishay / Siliconix MOSFETs MOSFET N-CHANNEL 600V Ne Sandėlyje Esantys
Min.: 1 000
Daugkart.: 1 000

Si Tube
Vishay Semiconductors MOSFETs MOSFET N-CHANNEL 600V Ne Sandėlyje Esantys
Min.: 3 000
Daugkart.: 3 000
Reel: 3 000

Si SMD/SMT DPAK-3 (TO-252-3) N-Channel 1 Channel 600 V 2 A 4.4 Ohms - 20 V, 20 V 2 V 18 nC - 55 C + 150 C 42 W Enhancement Reel