High-Speed IGBT4 Power Modules

Microchip Technology High-Speed IGBT4 Power Modules feature low voltage drop, low leakage current, and low switching losses. These modules operate at 1200V collector-emitter voltage (VCES) and provide very low stray inductance, Kelvin emitter/source for an easy drive, and extended temperature range. The benefits of IGBT4 modules are high-efficiency converters, offer outstanding performance at high-frequency operation, low profile, and low junction-to-heatsink thermal resistance. These modules are used in applications like high-reliability power systems, AC switches, high-efficiency AC/DC and DC/AC converters, and motor control.

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Pasirinkite Vaizdas Dalies Nr. Gam. Aprašymas Duomenų Lapas Prieinamumas Kainodara (EUR) Filtruokite lentelėje pateiktus rezultatus pagal vieneto kainą, remdamiesi kiekiu. Qty. RoHS ECAD modelis Gaminys Configuration Collector- Emitter Voltage VCEO Max Kolektoriaus ir Emiterio Stoties Įtampa Nuolatinė kolektoriaus srovė esant 25 C Užtvaro sklaidos įrenginio nuotėkio srovė Pd - skaidos galia Minimali darbinė temperatūra Didžiausia darbinė temperatūra
Microchip Technology Igbt Moduliai PM-IGBT-SBD-BL3 12Prieinamumas
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IGBT Modules Full Bridge 1.2 kV 2.4 V 160 A 150 nA 470 W - 55 C + 175 C
Microchip Technology Igbt Moduliai PM-IGBT-SBD-BL3 4Prieinamumas
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Daugkart.: 1

IGBT Modules Double Dual Common Source 1.2 kV 2.4 V 160 A 150 nA 470 W - 55 C + 175 C
Microchip Technology Igbt Moduliai PM-IGBT-SBD-BL1 9Prieinamumas
Min.: 1
Daugkart.: 1
IGBT Modules Half Bridge 1.2 kV 2.4 V 110 A 150 nA 375 W - 55 C + 175 C
Microchip Technology Igbt Moduliai PM-IGBT-SBD-BL2 7Prieinamumas
Min.: 1
Daugkart.: 1
IGBT Modules Asymmetrical Bridge 1.2 kV 2.4 V 110 A 150 nA 375 W - 55 C + 175 C
Microchip Technology Igbt Moduliai PM-IGBT-SBD-BL1 9Prieinamumas
Min.: 1
Daugkart.: 1
IGBT Modules Dual Common Source 1.2 kV 2.4 V 110 A 150 nA 375 W - 55 C + 175 C
Microchip Technology Igbt Moduliai PM-IGBT-SBD-BL2 6Prieinamumas
Min.: 1
Daugkart.: 1
IGBT Modules Double Dual Common Source 1.2 kV 2.4 V 110 A 150 nA 375 W - 55 C + 175 C
Microchip Technology Igbt Moduliai PM-IGBT-SBD-BL2
3Tikėtina 2026-03-16
Min.: 1
Daugkart.: 1
IGBT Modules Full Bridge 1.2 kV 2.4 V 110 A 150 nA 375 W - 55 C + 175 C