|
|
Igbt Moduliai 950 V, 600 A 3-level IGBT module
- F3L600R10W4S7FC22BPSA1
- Infineon Technologies
-
1:
188,66 €
-
11Prieinamumas
|
„Mouser“ Dalies Nr.
726-R10W4S7FC22BPSA1
|
Infineon Technologies
|
Igbt Moduliai 950 V, 600 A 3-level IGBT module
|
|
11Prieinamumas
|
|
Min.: 1
Daugkart.: 1
|
|
|
|
|
|
|
|
|
|
|
|
|
Tray
|
|
|
|
Igbt Moduliai 1200 V, 35 A PIM IGBT module
- FP35R12W2T4PB11BPSA1
- Infineon Technologies
-
1:
47,63 €
-
33Prieinamumas
|
„Mouser“ Dalies Nr.
726-FP35R12W2T4PB11B
|
Infineon Technologies
|
Igbt Moduliai 1200 V, 35 A PIM IGBT module
|
|
33Prieinamumas
|
|
|
47,63 €
|
|
|
39,45 €
|
|
|
36,15 €
|
|
Min.: 1
Daugkart.: 1
|
|
|
IGBT Silicon Modules
|
3-Phase Inverter
|
1.2 kV
|
1.85 V
|
35 A
|
100 nA
|
|
|
- 40 C
|
+ 150 C
|
Tray
|
|
|
|
Igbt Moduliai 1200 V, 100 A sixpack IGBT module
- FS100R12W2T7BOMA1
- Infineon Technologies
-
1:
58,47 €
-
156Prieinamumas
|
„Mouser“ Dalies Nr.
726-FS100R12W2T7BOMA
|
Infineon Technologies
|
Igbt Moduliai 1200 V, 100 A sixpack IGBT module
|
|
156Prieinamumas
|
|
Min.: 1
Daugkart.: 1
|
|
|
IGBT Silicon Modules
|
6-Pack
|
1.2 kV
|
1.5 V
|
70 A
|
100 nA
|
|
|
- 40 C
|
+ 175 C
|
Tray
|
|
|
|
Igbt Moduliai 1200 V, 25 A PIM IGBT module
- FP25R12W2T4PB11BPSA1
- Infineon Technologies
-
1:
49,85 €
-
7Prieinamumas
|
„Mouser“ Dalies Nr.
726-FP25R12W2T4PB11B
|
Infineon Technologies
|
Igbt Moduliai 1200 V, 25 A PIM IGBT module
|
|
7Prieinamumas
|
|
Min.: 1
Daugkart.: 1
|
|
|
IGBT Silicon Modules
|
3-Phase Inverter
|
1.2 kV
|
1.85 V
|
25 A
|
100 nA
|
|
|
- 40 C
|
+ 150 C
|
Tray
|
|
|
|
Igbt Moduliai 1200 V, 35 A sixpack IGBT module
- FS35R12W1T7BOMA1
- Infineon Technologies
-
1:
32,87 €
-
19Prieinamumas
|
„Mouser“ Dalies Nr.
726-FS35R12W1T7BOMA1
|
Infineon Technologies
|
Igbt Moduliai 1200 V, 35 A sixpack IGBT module
|
|
19Prieinamumas
|
|
|
32,87 €
|
|
|
23,12 €
|
|
|
19,29 €
|
|
Min.: 1
Daugkart.: 1
|
|
|
IGBT Silicon Modules
|
6-Pack
|
1.2 kV
|
1.6 V
|
35 A
|
100 nA
|
|
|
- 40 C
|
+ 175 C
|
Tray
|
|
|
|
Igbt Moduliai 1200 V, 25 A sixpack IGBT module
- FS25R12W1T7PB11BPSA1
- Infineon Technologies
-
1:
30,93 €
-
87Prieinamumas
|
„Mouser“ Dalies Nr.
726-FS25R12W1T7PB111
|
Infineon Technologies
|
Igbt Moduliai 1200 V, 25 A sixpack IGBT module
|
|
87Prieinamumas
|
|
Min.: 1
Daugkart.: 1
|
|
|
IGBT Silicon Modules
|
6-Pack
|
1.2 kV
|
1.6 V
|
25 A
|
100 nA
|
|
|
- 40 C
|
+ 175 C
|
Tray
|
|
|
|
Igbt Moduliai 1200 V, 50 A PIM IGBT module
- FP50R12W2T7BPSA1
- Infineon Technologies
-
1:
44,31 €
-
26Prieinamumas
|
„Mouser“ Dalies Nr.
726-FP50R12W2T7BPSA1
|
Infineon Technologies
|
Igbt Moduliai 1200 V, 50 A PIM IGBT module
|
|
26Prieinamumas
|
|
Min.: 1
Daugkart.: 1
|
|
|
IGBT Silicon Modules
|
3-Phase Inverter
|
1.2 kV
|
1.5 V
|
50 A
|
100 nA
|
|
|
- 40 C
|
+ 175 C
|
Tray
|
|
|
|
Igbt Moduliai 650 V, 100 A booster IGBT module
- DF100R07W1H5FPB54BPSA2
- Infineon Technologies
-
1:
31,52 €
-
30Prieinamumas
|
„Mouser“ Dalies Nr.
726-DFW1H5FPB54BPSA2
|
Infineon Technologies
|
Igbt Moduliai 650 V, 100 A booster IGBT module
|
|
30Prieinamumas
|
|
Min.: 1
Daugkart.: 1
|
|
|
SiC IGBT Modules
|
Dual
|
650 V
|
1.35 V
|
40 A
|
100 nA
|
|
Module
|
- 40 C
|
+ 150 C
|
Tray
|
|
|
|
Igbt Moduliai 1200 V, 25 A PIM IGBT module
- FP25R12W2T4PBPSA1
- Infineon Technologies
-
1:
45,00 €
-
23Prieinamumas
-
Netinkama eksploatuoti
|
„Mouser“ Dalies Nr.
726-FP25R12W2T4PBPSA
Netinkama eksploatuoti
|
Infineon Technologies
|
Igbt Moduliai 1200 V, 25 A PIM IGBT module
|
|
23Prieinamumas
|
|
Min.: 1
Daugkart.: 1
|
|
|
IGBT Silicon Modules
|
3-Phase Inverter
|
1.2 kV
|
1.85 V
|
25 A
|
100 nA
|
|
|
- 40 C
|
+ 150 C
|
Tray
|
|
|
|
Igbt Moduliai 1200 V, 10 A PIM IGBT module
- FP10R12W1T4PB11BPSA1
- Infineon Technologies
-
1:
32,91 €
-
36Prieinamumas
-
Netinkama eksploatuoti
|
„Mouser“ Dalies Nr.
726-FP10R12W1T4PB11B
Netinkama eksploatuoti
|
Infineon Technologies
|
Igbt Moduliai 1200 V, 10 A PIM IGBT module
|
|
36Prieinamumas
|
|
Min.: 1
Daugkart.: 1
|
|
|
IGBT Silicon Modules
|
3-Phase Inverter
|
1.2 kV
|
1.85 V
|
10 A
|
100 nA
|
|
|
- 40 C
|
+ 150 C
|
Tray
|
|
|
|
Igbt Moduliai 1200 V, 15 A PIM IGBT module
- FP15R12W1T4PBPSA1
- Infineon Technologies
-
1:
34,67 €
-
30Prieinamumas
|
„Mouser“ Dalies Nr.
726-FP15R12W1T4PBPSA
|
Infineon Technologies
|
Igbt Moduliai 1200 V, 15 A PIM IGBT module
|
|
30Prieinamumas
|
|
Min.: 1
Daugkart.: 1
|
|
|
IGBT Silicon Modules
|
3-Phase Inverter
|
1.2 kV
|
1.85 V
|
15 A
|
100 nA
|
|
|
- 40 C
|
+ 150 C
|
Tray
|
|
|
|
Igbt Moduliai 1200 V, 25 A 3-level IGBT module
- F3L25R12W1T4B27BOMA1
- Infineon Technologies
-
1:
28,50 €
-
167Prieinamumas
-
168Tikėtina 2026-02-25
|
„Mouser“ Dalies Nr.
726-F3L25R12W1T4B27B
|
Infineon Technologies
|
Igbt Moduliai 1200 V, 25 A 3-level IGBT module
|
|
167Prieinamumas
168Tikėtina 2026-02-25
|
|
Min.: 1
Daugkart.: 1
|
|
|
IGBT Silicon Modules
|
3-Phase Inverter
|
1.2 kV
|
1.85 V
|
25 A
|
100 nA
|
215 W
|
EasyPack1B
|
- 40 C
|
+ 150 C
|
Tray
|
|
|
|
Igbt Moduliai 650 V, 30 A 3-level IGBT module
- FS3L30R07W2H3FB11BPSA2
- Infineon Technologies
-
1:
43,68 €
-
14Prieinamumas
-
Netinkama eksploatuoti
|
„Mouser“ Dalies Nr.
726-FS3L30R07W2H3FB1
Netinkama eksploatuoti
|
Infineon Technologies
|
Igbt Moduliai 650 V, 30 A 3-level IGBT module
|
|
14Prieinamumas
|
|
|
43,68 €
|
|
|
33,88 €
|
|
|
32,51 €
|
|
Min.: 1
Daugkart.: 1
|
|
|
SiC IGBT Modules
|
3-Phase Inverter
|
650 V
|
1.5 V
|
30 A
|
100 nA
|
|
Module
|
- 40 C
|
+ 150 C
|
Tray
|
|
|
|
Igbt Moduliai EASY
- DF200R07W2H3B77BPSA1
- Infineon Technologies
-
1:
46,46 €
-
2Prieinamumas
|
„Mouser“ Dalies Nr.
726-DF200R07W2H3B77B
|
Infineon Technologies
|
Igbt Moduliai EASY
|
|
2Prieinamumas
|
|
Min.: 1
Daugkart.: 1
|
|
|
IGBT Silicon Modules
|
3-Phase Inverter
|
650 V
|
1.46 V
|
100 A
|
100 nA
|
|
|
- 40 C
|
+ 150 C
|
Tray
|
|
|
|
Igbt Moduliai EASY
- F3L100R07W2H3B11BPSA1
- Infineon Technologies
-
1:
45,73 €
-
4Prieinamumas
|
„Mouser“ Dalies Nr.
726-F3L100R07W2H3B11
|
Infineon Technologies
|
Igbt Moduliai EASY
|
|
4Prieinamumas
|
|
Min.: 1
Daugkart.: 1
|
|
|
IGBT Silicon Modules
|
3-Phase Inverter
|
650 V
|
1.68 V
|
70 A
|
100 nA
|
|
|
- 40 C
|
+ 150 C
|
Tray
|
|
|
|
Igbt Moduliai EASY
- F3L150R07W2H3B11BPSA1
- Infineon Technologies
-
1:
57,86 €
-
11Prieinamumas
|
„Mouser“ Dalies Nr.
726-F3L150R07W2H3B11
|
Infineon Technologies
|
Igbt Moduliai EASY
|
|
11Prieinamumas
|
|
|
57,86 €
|
|
|
45,83 €
|
|
|
39,53 €
|
|
Min.: 1
Daugkart.: 1
|
|
|
IGBT Silicon Modules
|
3-Phase Inverter
|
650 V
|
1.68 V
|
150 A
|
100 nA
|
|
|
- 40 C
|
+ 150 C
|
Tray
|
|
|
|
Igbt Moduliai 650 V, 400 A 3-level IGBT module
- F3L400R07W3S5B59BPSA1
- Infineon Technologies
-
1:
84,35 €
-
4Prieinamumas
|
„Mouser“ Dalies Nr.
726-F3L400R07W3S5B59
|
Infineon Technologies
|
Igbt Moduliai 650 V, 400 A 3-level IGBT module
|
|
4Prieinamumas
|
|
Min.: 1
Daugkart.: 1
|
|
|
IGBT Silicon Modules
|
3-Phase Inverter
|
650 V
|
880 mV
|
255 A
|
100 nA
|
|
|
- 40 C
|
+ 150 C
|
Tray
|
|
|
|
Igbt Moduliai 1200 V, 100 A PIM IGBT module
- FP100R12W3T7B11BPSA1
- Infineon Technologies
-
1:
81,19 €
-
5Prieinamumas
|
„Mouser“ Dalies Nr.
726-FP100R12W3T7B111
|
Infineon Technologies
|
Igbt Moduliai 1200 V, 100 A PIM IGBT module
|
|
5Prieinamumas
|
|
Min.: 1
Daugkart.: 1
|
|
|
IGBT Silicon Modules
|
3-Phase Inverter
|
1.2 kV
|
1.5 V
|
100 A
|
100 nA
|
|
|
- 40 C
|
+ 175 C
|
Tray
|
|
|
|
Igbt Moduliai 1200 V, 25 A PIM IGBT module
- FP25R12W1T7B11BPSA1
- Infineon Technologies
-
1:
33,16 €
-
17Prieinamumas
|
„Mouser“ Dalies Nr.
726-FP25R12W1T7B11BP
|
Infineon Technologies
|
Igbt Moduliai 1200 V, 25 A PIM IGBT module
|
|
17Prieinamumas
|
|
|
33,16 €
|
|
|
25,08 €
|
|
|
24,06 €
|
|
Min.: 1
Daugkart.: 1
|
|
|
IGBT Silicon Modules
|
3-Phase Inverter
|
1.2 kV
|
1.6 V
|
25 A
|
100 nA
|
|
AG-EASY1B-2
|
- 40 C
|
+ 175 C
|
Tray
|
|
|
|
Igbt Moduliai 1200 V, 100 A sixpack IGBT module
- FS100R12W2T7B11BOMA1
- Infineon Technologies
-
1:
67,40 €
-
2Prieinamumas
|
„Mouser“ Dalies Nr.
726-FS100R12W2T7B11B
|
Infineon Technologies
|
Igbt Moduliai 1200 V, 100 A sixpack IGBT module
|
|
2Prieinamumas
|
|
|
67,40 €
|
|
|
56,06 €
|
|
|
50,12 €
|
|
Min.: 1
Daugkart.: 1
|
|
|
IGBT Silicon Modules
|
6-Pack
|
1.2 kV
|
1.5 V
|
70 A
|
100 nA
|
|
|
- 40 C
|
+ 175 C
|
Tray
|
|
|
|
Igbt Moduliai 1200 V, 25 A sixpack IGBT module
- FS25R12W1T7B11BOMA1
- Infineon Technologies
-
1:
25,61 €
-
2Prieinamumas
|
„Mouser“ Dalies Nr.
726-FS25R12W1T7B11BO
|
Infineon Technologies
|
Igbt Moduliai 1200 V, 25 A sixpack IGBT module
|
|
2Prieinamumas
|
|
|
25,61 €
|
|
|
17,05 €
|
|
|
16,73 €
|
|
Min.: 1
Daugkart.: 1
|
|
|
IGBT Silicon Modules
|
6-Pack
|
1.2 kV
|
1.6 V
|
25 A
|
100 nA
|
|
|
- 40 C
|
+ 175 C
|
Tray
|
|
|
|
Igbt Moduliai 1200 V, 25 A sixpack IGBT module
- FS25R12W1T7BOMA1
- Infineon Technologies
-
1:
25,60 €
-
1Prieinamumas
|
„Mouser“ Dalies Nr.
726-FS25R12W1T7BOMA1
|
Infineon Technologies
|
Igbt Moduliai 1200 V, 25 A sixpack IGBT module
|
|
1Prieinamumas
|
|
|
25,60 €
|
|
|
17,05 €
|
|
|
16,73 €
|
|
Min.: 1
Daugkart.: 1
|
|
|
IGBT Silicon Modules
|
6-Pack
|
1.2 kV
|
1.6 V
|
25 A
|
100 nA
|
|
|
- 40 C
|
+ 175 C
|
Tray
|
|
|
|
Igbt Moduliai 1200 V, 35 A sixpack IGBT module
- FS35R12W1T7B11BOMA1
- Infineon Technologies
-
1:
28,67 €
-
26Prieinamumas
|
„Mouser“ Dalies Nr.
726-FS35R12W1T7B11BO
|
Infineon Technologies
|
Igbt Moduliai 1200 V, 35 A sixpack IGBT module
|
|
26Prieinamumas
|
|
|
28,67 €
|
|
|
23,12 €
|
|
|
19,29 €
|
|
Min.: 1
Daugkart.: 1
|
|
|
IGBT Silicon Modules
|
6-Pack
|
1.2 kV
|
1.6 V
|
35 A
|
100 nA
|
|
|
- 40 C
|
+ 175 C
|
Tray
|
|
|
|
Igbt Moduliai 650 V, 40 A 3-level IGBT module
- FS3L40R07W2H5FB11BOMA1
- Infineon Technologies
-
1:
69,81 €
-
9Prieinamumas
|
„Mouser“ Dalies Nr.
726-FS3L40R07W2H5FB1
|
Infineon Technologies
|
Igbt Moduliai 650 V, 40 A 3-level IGBT module
|
|
9Prieinamumas
|
|
|
69,81 €
|
|
|
55,93 €
|
|
|
48,11 €
|
|
Min.: 1
Daugkart.: 1
|
|
|
SiC IGBT Modules
|
3-Phase Inverter
|
650 V
|
1.4 V
|
20 A
|
100 nA
|
|
|
- 40 C
|
+ 150 C
|
Tray
|
|
|
|
Igbt Moduliai 650 V, 50 A 3-level IGBT module
- FS3L50R07W2H3FB11BPSA1
- Infineon Technologies
-
1:
52,74 €
-
14Prieinamumas
|
„Mouser“ Dalies Nr.
726-FS3L50R07W2H3FB1
|
Infineon Technologies
|
Igbt Moduliai 650 V, 50 A 3-level IGBT module
|
|
14Prieinamumas
|
|
|
52,74 €
|
|
|
43,50 €
|
|
|
35,72 €
|
|
Min.: 1
Daugkart.: 1
|
|
|
SiC IGBT Modules
|
3-Phase Inverter
|
650 V
|
1.45 V
|
50 A
|
100 nA
|
20 mW
|
Module
|
- 40 C
|
+ 150 C
|
Tray
|
|