Rezultatai: 8
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Qty. RoHS ECAD modelis Darbinis Dažnis
Darbinė Maitinimo Įtampa
Darbinė Maitinimo Srovė
Gain
NF - triukšmo koeficientas
Tipas
Montavimo stilius
Pakuotė / Korpusas
Technologijos
P1dB - suspaudimo taškas
OIP3 – trečiosios eilės perėmimas
Minimali darbinė temperatūra
Didžiausia darbinė temperatūra
Marki Microwave RF Stiprintuvas The ADM-8350PSM is a high-linearity, low noise amplifier capable of providing +22 dBm output power up to 6 GHz. The ADM-8350PSM can serve either as a linear signal amplifier, or as a saturated driver amplifier for H- or S-diode mixers.
Duomenų Lapas
10Prieinamumas
Min.: 1
Daugkart.: 1

90 MHz to 6 GHz 5 VDC 84 mA 23 dB 1.8 dB, 2.5 dB Low Noise Amplifiers SMD/SMT DFN 22 dBm 40 dBm - 40 C + 85 C
Marki Microwave RF Stiprintuvas A high-linearity low noise amplifier capable of providing +23 dBm output power up to 6 GHz. The ADM-8096PSM can serve either as a linear signal amplifier, or as a saturated driver amplifier for H- or S-diode mixers.
Duomenų Lapas
20Prieinamumas
Min.: 1
Daugkart.: 1

90 MHz to 6 GHz 5 VDC 58 mA 22 dB 1.5 dB, 1.9 dB Low Noise Amplifiers SMD/SMT DFN 21 dBm 11 dBm - 40 C + 85 C
Marki Microwave RF Stiprintuvas A high-linearity low noise amplifier capable of providing +20 dBm output power up to 10 GHz. The ADM-8095PSM can serve either as a linear signal amplifier, or as a saturated driver amplifier for H- or S-diode mixers.
Duomenų Lapas
50Prieinamumas
Min.: 1
Daugkart.: 1

90 MHz to 10 GHz 5 VDC 39 mA 18 dB 1.2 dB, 1.5 dB Low Noise Amplifiers SMD/SMT DFN 18 dB 30 dBm - 40 C + 85 C
Marki Microwave RF Stiprintuvas A broadband, efficient GaAs PHEMT distributed amplifier in a 4mm QFN surface mount package. It is designed to provide optimal LO drive for T3 mixers and offers 13 dB typical gain and 20 dBm typical saturated output power for 165 mA of current.
Duomenų Lapas
23Prieinamumas
Min.: 1
Daugkart.: 1

DC to 26.5 GHz 26.5 mA 13 dB 5.5 dB Driver Amplifiers SMD/SMT QFN GaAs 15 dBm 26 dBm - 55 C + 85 C
Marki Microwave RF Stiprintuvas The ADM2-0035PA is an LO driver amplifier module with 2 internally connected wideband gain stages and equalization. It is designed to provide sufficient gain and output power for Marki S-diode mixers below 35 GHz with an input power of 0-5 dBm.
Duomenų Lapas
3Prieinamumas
Min.: 1
Daugkart.: 1

100 MHz to 35 GHz 7 VDC 320 mA 23 dB 5 dB 13 dB, 18 dB 30 dBm - 55 C + 85 C
Marki Microwave RF Stiprintuvas The APM-6849SM is a single stage broadband, low phase noise pre-amplifier designed to provide 11 dB typical gain packaged in a 3 mm QFN with low current consumption.
Duomenų Lapas
25Prieinamumas
Min.: 1
Daugkart.: 1

2 GHz to 30 GHz 5 V 21 mA 11 dB 26.5 dB Low Noise Amplifiers SMD/SMT QFN GaAs 14 dBm, 20 dBm 20 dBm - 40 C + 85 C
Marki Microwave RF Stiprintuvas A high-linearity, high gain, low noise distributed amplifier capable of providing +22 dBm output power up to 30 GHz. When driven with an input power of 0 to +5 dBm, it can provide sufficient LO drive to power all H and most S diode mixers to 30GHz.
Duomenų Lapas
25Tikėtina 2026-03-06
Min.: 1
Daugkart.: 1

2 GHz to 30 GHz 5 VDC 237 mA 23 dB 2.7 dB Low Noise Amplifiers SMD/SMT QFN 21 dBm 9 dBm - 40 C + 85 C
Marki Microwave RF Stiprintuvas A high-linearity, high gain, low noise distributed amplifier capable of providing +23 dBm output power up to 38 GHz. When driven with an input power of 0 to +5 dBm, it can provide sufficient LO drive to power all H and most S diode mixers to 40GHz.
Duomenų Lapas
25Tikėtina 2026-03-06
Min.: 1
Daugkart.: 1

5 V 237 mA 40 dB 4 dB Low Noise Amplifiers SMD/SMT QFN 27 dBm, 40 dBm 27 dBm, 40 dBm - 40 C + 85 C