SiC MOSFET SIC MOS D2PAK-7L 40MOHM 1200V
NTBG040N120SC1
onsemi
1:
16,97 €
990 Prieinamumas
„Mouser“ Dalies Nr.
863-NTBG040N120SC1
onsemi
SiC MOSFET SIC MOS D2PAK-7L 40MOHM 1200V
990 Prieinamumas
1
16,97 €
10
13,26 €
100
13,17 €
500
12,72 €
800
12,72 €
Pirkti
Min.: 1
Daugkart.: 1
Reel :
800
Išsami Informacija
SMD/SMT
D2PAK-7
N-Channel
1 Channel
1.2 kV
60 A
56 mOhms
- 15 V, + 25 V
4.3 V
106 nC
- 55 C
+ 175 C
357 W
Enhancement
EliteSiC
SiC MOSFET SIC MOS TO247-4L 40MOHM 1200V
+1 vaizdas
NTH4L040N120SC1
onsemi
1:
16,16 €
1 458 Prieinamumas
„Mouser“ Dalies Nr.
863-NTH4L040N120SC1
onsemi
SiC MOSFET SIC MOS TO247-4L 40MOHM 1200V
1 458 Prieinamumas
Pirkti
Min.: 1
Daugkart.: 1
Išsami Informacija
Through Hole
TO-247-4
N-Channel
1 Channel
1.2 kV
58 A
56 mOhms
- 15 V, + 25 V
4.3 V
106 nC
- 55 C
+ 175 C
319 W
Enhancement
EliteSiC
SiC MOSFET SIC MOS TO247-3L 160MOHM 1200V
+1 vaizdas
NVHL160N120SC1
onsemi
1:
10,62 €
2 422 Prieinamumas
„Mouser“ Dalies Nr.
863-NVHL160N120SC1
onsemi
SiC MOSFET SIC MOS TO247-3L 160MOHM 1200V
2 422 Prieinamumas
1
10,62 €
10
6,58 €
120
6,16 €
Pirkti
Min.: 1
Daugkart.: 1
Išsami Informacija
Through Hole
TO-247-3
N-Channel
1 Channel
1.2 kV
17 A
224 mOhms
- 15 V, + 25 V
4.3 V
34 nC
- 55 C
+ 175 C
119 W
Enhancement
EliteSiC
SiC MOSFET 20MW 1200V
+1 vaizdas
NVHL020N120SC1
onsemi
1:
34,13 €
937 Prieinamumas
„Mouser“ Dalies Nr.
863-NVHL020N120SC1
onsemi
SiC MOSFET 20MW 1200V
937 Prieinamumas
Pirkti
Min.: 1
Daugkart.: 1
Išsami Informacija
Through Hole
TO-247-3
N-Channel
1 Channel
1.2 kV
103 A
28 mOhms
- 15 V, + 25 V
4.3 V
203 nC
- 55 C
+ 175 C
535 W
Enhancement
AEC-Q101
EliteSiC
SiC MOSFET SIC MOS D2PAK-7L 80MOHM 1200V
NTBG080N120SC1
onsemi
1:
9,04 €
626 Prieinamumas
„Mouser“ Dalies Nr.
863-NTBG080N120SC1
onsemi
SiC MOSFET SIC MOS D2PAK-7L 80MOHM 1200V
626 Prieinamumas
1
9,04 €
10
7,28 €
100
6,78 €
500
6,54 €
800
6,54 €
Pirkti
Min.: 1
Daugkart.: 1
Reel :
800
Išsami Informacija
SMD/SMT
D2PAK-7
N-Channel
1 Channel
1.2 kV
30 A
110 mOhms
- 15 V, + 25 V
4.3 V
56 nC
- 55 C
+ 175 C
179 W
Enhancement
EliteSiC
SiC MOSFET SIC MOS TO247-3L 80MOHM 1200V
+1 vaizdas
NTHL080N120SC1A
onsemi
1:
11,12 €
1 208 Prieinamumas
„Mouser“ Dalies Nr.
863-NTHL080N120SC1A
onsemi
SiC MOSFET SIC MOS TO247-3L 80MOHM 1200V
1 208 Prieinamumas
1
11,12 €
10
6,73 €
120
6,42 €
Pirkti
Min.: 1
Daugkart.: 1
Išsami Informacija
Through Hole
TO-247-3
N-Channel
1 Channel
1.2 kV
31 A
110 mOhms
- 15 V, + 25 V
4.3 V
56 nC
- 55 C
+ 175 C
178 W
Enhancement
EliteSiC
SiC MOSFET SIC MOS TO247-4L 80MOHM 1200V
+1 vaizdas
NTH4L080N120SC1
onsemi
1:
10,45 €
253 Prieinamumas
„Mouser“ Dalies Nr.
863-NTH4L080N120SC1
onsemi
SiC MOSFET SIC MOS TO247-4L 80MOHM 1200V
253 Prieinamumas
1
10,45 €
10
6,28 €
120
5,88 €
Pirkti
Min.: 1
Daugkart.: 1
Išsami Informacija
Through Hole
TO-247-4
N-Channel
1 Channel
1.2 kV
29 A
110 mOhms
- 15 V, + 25 V
4.3 V
56 nC
- 55 C
+ 175 C
170 W
Enhancement
EliteSiC
SiC MOSFET SIC MOS D2PAK-7L 80MOHM 1200V
NVBG080N120SC1
onsemi
1:
9,75 €
1 971 Prieinamumas
„Mouser“ Dalies Nr.
863-NVBG080N120SC1
onsemi
SiC MOSFET SIC MOS D2PAK-7L 80MOHM 1200V
1 971 Prieinamumas
1
9,75 €
10
6,77 €
100
5,72 €
500
5,66 €
800
5,34 €
Pirkti
Min.: 1
Daugkart.: 1
Reel :
800
Išsami Informacija
SMD/SMT
D2PAK-7
N-Channel
1 Channel
1.2 kV
30 A
110 mOhms
- 15 V, + 25 V
4.3 V
56 nC
- 55 C
+ 175 C
179 W
Enhancement
AEC-Q101
EliteSiC
SiC MOSFET SIC MOS TO247-3L 40MOHM 1200V
+1 vaizdas
NTHL040N120SC1
onsemi
1:
16,55 €
608 Prieinamumas
„Mouser“ Dalies Nr.
863-NTHL040N120SC1
onsemi
SiC MOSFET SIC MOS TO247-3L 40MOHM 1200V
608 Prieinamumas
Pirkti
Min.: 1
Daugkart.: 1
Išsami Informacija
Through Hole
TO-247-3
N-Channel
1 Channel
1.2 kV
60 A
56 mOhms
- 15 V, + 25 V
4.3 V
106 nC
- 55 C
+ 175 C
348 W
Enhancement
EliteSiC
SiC MOSFET SIC MOS TO247-4L 20MOHM 1200V
+1 vaizdas
NTH4L020N120SC1
onsemi
1:
24,70 €
256 Prieinamumas
„Mouser“ Dalies Nr.
863-NTH4L020N120SC1
onsemi
SiC MOSFET SIC MOS TO247-4L 20MOHM 1200V
256 Prieinamumas
Pirkti
Min.: 1
Daugkart.: 1
Išsami Informacija
Through Hole
TO-247-4
N-Channel
1 Channel
1.2 kV
102 A
28 mOhms
- 15 V, + 25 V
4.3 V
220 nC
- 55 C
+ 175 C
510 W
Enhancement
EliteSiC
SiC MOSFET SIC MOS D2PAK-7L 160MOHM 1200V
NTBG160N120SC1
onsemi
1:
5,89 €
2 050 Prieinamumas
„Mouser“ Dalies Nr.
863-NTBG160N120SC1
onsemi
SiC MOSFET SIC MOS D2PAK-7L 160MOHM 1200V
2 050 Prieinamumas
1
5,89 €
10
4,76 €
100
4,27 €
500
4,15 €
800
4,15 €
Pirkti
Min.: 1
Daugkart.: 1
Reel :
800
Išsami Informacija
SMD/SMT
D2PAK-7
N-Channel
1 Channel
1.2 kV
19.5 A
224 mOhms
- 15 V, + 25 V
4.3 V
33.8 nC
- 55 C
+ 175 C
136 W
Enhancement
EliteSiC
SiC MOSFET SIC MOS TO247-4L 1200V 160MOHM INDUSTRY PART
+1 vaizdas
NTH4L160N120SC1
onsemi
1:
5,62 €
2 153 Prieinamumas
„Mouser“ Dalies Nr.
863-NTH4L160N120SC1
onsemi
SiC MOSFET SIC MOS TO247-4L 1200V 160MOHM INDUSTRY PART
2 153 Prieinamumas
Pirkti
Min.: 1
Daugkart.: 1
Išsami Informacija
Through Hole
TO-247-4
N-Channel
1 Channel
1.2 kV
17.3 A
224 mOhms
- 15 V, + 25 V
4.3 V
34 nC
- 55 C
+ 175 C
111 W
Enhancement
EliteSiC
SiC MOSFET SIC MOS 80MW 1200 V 80 mOhms 44A
+1 vaizdas
NVHL080N120SC1
onsemi
1:
13,80 €
1 182 Prieinamumas
NRND
„Mouser“ Dalies Nr.
863-NVHL080N120SC1
NRND
onsemi
SiC MOSFET SIC MOS 80MW 1200 V 80 mOhms 44A
1 182 Prieinamumas
1
13,80 €
10
9,98 €
120
9,43 €
510
9,00 €
Pirkti
Min.: 1
Daugkart.: 1
Išsami Informacija
Through Hole
TO-247-3
N-Channel
1 Channel
1.2 kV
31 A
110 mOhms
- 15 V, + 25 V
4.3 V
56 nC
- 55 C
+ 175 C
178 W
Enhancement
AEC-Q101
EliteSiC
SiC MOSFET SIC MOS TO247-4L 80MOHM 1200V
+1 vaizdas
NVH4L080N120SC1
onsemi
1:
10,23 €
689 Prieinamumas
„Mouser“ Dalies Nr.
863-NVH4L080N120SC1
onsemi
SiC MOSFET SIC MOS TO247-4L 80MOHM 1200V
689 Prieinamumas
Pirkti
Min.: 1
Daugkart.: 1
Išsami Informacija
Through Hole
TO-247-4
N-Channel
1 Channel
1.2 kV
29 A
80 mOhms
- 15 V, + 25 V
4.3 V
56 nC
- 55 C
+ 175 C
170 W
Enhancement
EliteSiC
SiC MOSFET SIC MOS TO247-4L 20MOHM 1200V
+1 vaizdas
NVH4L020N120SC1
onsemi
1:
37,91 €
282 Prieinamumas
„Mouser“ Dalies Nr.
863-NVH4L020N120SC1
onsemi
SiC MOSFET SIC MOS TO247-4L 20MOHM 1200V
282 Prieinamumas
Pirkti
Min.: 1
Daugkart.: 1
Išsami Informacija
Through Hole
TO-247-4
N-Channel
1 Channel
1.2 kV
102 A
28 mOhms
- 15 V, + 25 V
4.3 V
220 nC
- 55 C
+ 175 C
510 W
Enhancement
EliteSiC
SiC MOSFET SIC MOS TO247-4L 1200V 40MOHM AUTO PART
+1 vaizdas
NVH4L040N120SC1
onsemi
1:
17,81 €
224 Prieinamumas
„Mouser“ Dalies Nr.
863-NVH4L040N120SC1
onsemi
SiC MOSFET SIC MOS TO247-4L 1200V 40MOHM AUTO PART
224 Prieinamumas
Pirkti
Min.: 1
Daugkart.: 1
Išsami Informacija
Through Hole
TO-247-4
N-Channel
1 Channel
1.2 kV
58 A
56 mOhms
- 15 V, + 25 V
4.3 V
106 nC
- 55 C
+ 175 C
319 W
Enhancement
EliteSiC
SiC MOSFET SIC MOS TO247-4L 1200V 160MOHM AUTO PART
+1 vaizdas
NVH4L160N120SC1
onsemi
1:
7,71 €
181 Prieinamumas
„Mouser“ Dalies Nr.
863-NVH4L160N120SC1
onsemi
SiC MOSFET SIC MOS TO247-4L 1200V 160MOHM AUTO PART
181 Prieinamumas
Pirkti
Min.: 1
Daugkart.: 1
Išsami Informacija
Through Hole
TO-247-4
N-Channel
1 Channel
1.2 kV
17.3 A
224 mOhms
- 15 V, + 25 V
4.3 V
34 nC
- 55 C
+ 175 C
111 W
Enhancement
EliteSiC
SiC MOSFET SIC MOS 20MW 1200V
NTBG020N120SC1
onsemi
1:
31,31 €
1 090 Prieinamumas
800 Tikėtina 2026-05-06
„Mouser“ Dalies Nr.
863-NTBG020N120SC1
onsemi
SiC MOSFET SIC MOS 20MW 1200V
1 090 Prieinamumas
800 Tikėtina 2026-05-06
1
31,31 €
10
25,34 €
100
25,30 €
500
24,83 €
800
23,66 €
Pirkti
Min.: 1
Daugkart.: 1
Reel :
800
Išsami Informacija
SMD/SMT
D2PAK-7
N-Channel
1 Channel
1.2 kV
98 A
28 mOhms
- 15 V, + 25 V
4.3 V
220 nC
- 55 C
+ 175 C
468 W
Enhancement
EliteSiC
SiC MOSFET 20MW 1200V
+1 vaizdas
NTHL020N120SC1
onsemi
1:
28,96 €
1 001 Prieinamumas
„Mouser“ Dalies Nr.
863-NTHL020N120SC1
onsemi
SiC MOSFET 20MW 1200V
1 001 Prieinamumas
Pirkti
Min.: 1
Daugkart.: 1
Išsami Informacija
Through Hole
TO-247-3
N-Channel
1 Channel
1.2 kV
103 A
28 mOhms
- 15 V, + 25 V
4.3 V
203 nC
- 55 C
+ 175 C
535 W
Enhancement
EliteSiC
SiC MOSFET SIC MOS TO247-3L 160MOHM 1200V
+1 vaizdas
NTHL160N120SC1
onsemi
1:
7,27 €
990 Prieinamumas
„Mouser“ Dalies Nr.
863-NTHL160N120SC1
onsemi
SiC MOSFET SIC MOS TO247-3L 160MOHM 1200V
990 Prieinamumas
1
7,27 €
10
4,70 €
510
4,45 €
1 020
4,30 €
Pirkti
Min.: 1
Daugkart.: 1
Išsami Informacija
Through Hole
TO-247-3
N-Channel
1 Channel
1.2 kV
17 A
224 mOhms
- 15 V, + 25 V
4.3 V
34 nC
- 55 C
+ 175 C
119 W
Enhancement
EliteSiC
SiC MOSFET SIC MOS D2PAK-7L 20MOHM 1
NVBG020N120SC1
onsemi
1:
41,99 €
84 Prieinamumas
„Mouser“ Dalies Nr.
863-NVBG020N120SC1
onsemi
SiC MOSFET SIC MOS D2PAK-7L 20MOHM 1
84 Prieinamumas
1
41,99 €
10
36,46 €
100
36,10 €
500
34,05 €
800
34,05 €
Pirkti
Min.: 1
Daugkart.: 1
Reel :
800
SMD/SMT
D2PAK-7
N-Channel
1 Channel
1.2 kV
98 A
28 mOhms
- 15 V, + 25 V
4.3 V
220 nC
- 55 C
+ 175 C
468 W
Enhancement
AEC-Q101
EliteSiC
SiC MOSFET SIC MOS TO247-3L 40MOHM 1200V
+1 vaizdas
NVHL040N120SC1
onsemi
1:
22,15 €
195 Prieinamumas
„Mouser“ Dalies Nr.
863-NVHL040N120SC1
onsemi
SiC MOSFET SIC MOS TO247-3L 40MOHM 1200V
195 Prieinamumas
Pirkti
Min.: 1
Daugkart.: 1
Išsami Informacija
Through Hole
TO-247-3
N-Channel
1 Channel
1.2 kV
60 A
56 mOhms
- 15 V, + 25 V
4.3 V
106 nC
- 55 C
+ 175 C
348 W
Enhancement
EliteSiC
SiC MOSFET SIC MOS D2PAK-7L 160MOHM 1200V
NVBG160N120SC1
onsemi
1:
10,44 €
29 Prieinamumas
800 Tikėtina 2026-07-21
„Mouser“ Dalies Nr.
863-NVBG160N120SC1
onsemi
SiC MOSFET SIC MOS D2PAK-7L 160MOHM 1200V
29 Prieinamumas
800 Tikėtina 2026-07-21
1
10,44 €
10
7,28 €
100
6,27 €
500
6,04 €
800
5,85 €
Pirkti
Min.: 1
Daugkart.: 1
Reel :
800
Išsami Informacija
SMD/SMT
D2PAK-7
N-Channel
1 Channel
1.2 kV
19.5 A
224 mOhms
- 15 V, + 25 V
4.3 V
33.8 nC
- 55 C
+ 175 C
136 W
Enhancement
AEC-Q101
EliteSiC
SiC MOSFET SIC MOS D2PAK-7L 40MOHM 1200V
NVBG040N120SC1
onsemi
1:
22,88 €
53 Prieinamumas
„Mouser“ Dalies Nr.
863-NVBG040N120SC1
onsemi
SiC MOSFET SIC MOS D2PAK-7L 40MOHM 1200V
53 Prieinamumas
1
22,88 €
10
17,77 €
100
16,95 €
500
15,38 €
800
15,38 €
Pirkti
Min.: 1
Daugkart.: 1
Reel :
800
Išsami Informacija
SMD/SMT
D2PAK-7
N-Channel
1 Channel
1.2 kV
60 A
56 mOhms
- 15 V, + 25 V
4.3 V
106 nC
- 55 C
+ 175 C
357 W
Enhancement
EliteSiC
SiC MOSFET SIC MOSFET 900V TO247-4L 60MOHM
+1 vaizdas
NVH4L060N090SC1
onsemi
1:
14,90 €
14 Prieinamumas
„Mouser“ Dalies Nr.
863-NVH4L060N090SC1
onsemi
SiC MOSFET SIC MOSFET 900V TO247-4L 60MOHM
14 Prieinamumas
Pirkti
Min.: 1
Daugkart.: 1
Išsami Informacija
Through Hole
TO-247-4
N-Channel
1 Channel
900 V
46 A
84 mOhms
- 10 V, + 19 V
4.3 V
87 nC
- 55 C
+ 175 C
221 W
Enhancement
EliteSiC