Silicon Carbide Power MOSFETs

STMicroelectronics Silicon Carbide Power MOSFETs bring wide bandgap materials' advanced efficiency and reliability to a broader range of energy-conscious applications. These applications include inverters for electric/hybrid vehicles, solar or wind power generation, high-efficiency drives, power supplies, and smart-grid equipment. An extended voltage range from 650V to 1700V features excellent switching performance combined with very low on-state resistance RDS(on) per area Figure Of Merit. ST SiC MOSFETs allow the design of more efficient and compact systems. The STMicro 1200V SiC MOSFETs exhibit an outstanding temperature rating of 200°C for improved thermal design of power electronics systems. Compared to silicon MOSFET, SiC MOSFET also features significantly reduced switching losses with minimal variation versus the temperature.  

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STMicroelectronics SiC MOSFET Automotive-grade silicon carbide Power MOSFET 1200 V, 19.2 mOhm typ., 90 A
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12Prieinamumas
600Tikėtina 2027-03-26
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: 600

SiC MOSFETS
STMicroelectronics SiC MOSFET Silicon carbide Power MOSFET 650 V, 18 mOhm typ., 40 A in a PowerFLAT 8x8 HV pac
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1 597Prieinamumas
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SiC MOSFETS SiC SMD/SMT PowerFLAT-5 N-Channel
STMicroelectronics SiC MOSFET Silicon carbide Power MOSFET 650 V, 55 mOhm typ., 40 A in a PowerFLAT 8x8 HV pac
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2 311Prieinamumas
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SiC MOSFETS SiC SMD/SMT PowerFLAT-5 N-Channel
STMicroelectronics SiC MOSFET Automotive-grade silicon carbide Power MOSFET 1200 V, 16 mOhm typ., 112 A in an H2PAK-7 package
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448Prieinamumas
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: 1 000

SiC MOSFETS SiC SMD/SMT H2PAK-7 N-Channel
STMicroelectronics SiC MOSFET Automotive-grade silicon carbide Power MOSFET 1200 V, 18.5 mOhm typ., 100 A in an HU3PAK package
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239Prieinamumas
600Tikėtina 2026-09-25
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: 600

SiC MOSFETS SiC SMD/SMT HU3PAK-7 N-Channel
STMicroelectronics SiC MOSFET Automotive-grade silicon carbide Power MOSFET 650 V, 29 mOhm typ., 60 A in an H2PAK-7 package
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872Prieinamumas
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: 1 000

SiC MOSFETS SiC SMD/SMT H2PAK-7 N-Channel
STMicroelectronics SiC MOSFET Silicon carbide Power MOSFET 650 V, 58 mOhm typ., 30 A in a TO-LL package
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1 754Prieinamumas
Min.: 1
Daugkart.: 1
: 1 800

SiC MOSFETS SiC SMD/SMT TOLL-8 N-Channel
STMicroelectronics SiC MOSFET Automotive-grade silicon carbide Power MOSFET 1200 V, 15 mOhm typ., 129 A in an HiP247-4 package
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600Prieinamumas
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SiC MOSFETS SiC Through Hole HiP-247-4 N-Channel


STMicroelectronics SiC MOSFET Automotive-grade silicon carbide Power MOSFET 650 V, 20 mOhm typ., 55 A in an HiP247-4 package
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465Prieinamumas
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SiC MOSFETS SiC Through Hole HiP-247-4 N-Channel


STMicroelectronics SiC MOSFET Automotive-grade silicon carbide Power MOSFET 1200 V, 18.5 mOhm typ., 100 A in an HiP247-4 package
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362Prieinamumas
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SiC MOSFETS SiC Through Hole Hip247-4 N-Channel


STMicroelectronics SiC MOSFET Automotive-grade silicon carbide Power MOSFET 1200 V, 27 mOhm typ., 56 A in an HiP247-4 package
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296Prieinamumas
1 200Tikėtina 2026-08-31
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SiC MOSFETS SiC Through Hole HiP-247-4 N-Channel


STMicroelectronics SiC MOSFET Automotive-grade silicon carbide Power MOSFET 1200 V, 27 mOhm typ., 56 A in an HiP247 package
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409Prieinamumas
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SiC MOSFETS SiC Through Hole HiP247-3 N-Channel


STMicroelectronics SiC MOSFET Automotive-grade silicon carbide Power MOSFET 650 V, 29 mOhm typ., 60 A
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261Prieinamumas
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Daugkart.: 1

SiC MOSFETS SiC Through Hole HiP-247-4 N-Channel


STMicroelectronics SiC MOSFET Automotive-grade silicon carbide Power MOSFET 1200 V, 40 mOhm typ., 40 A
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367Prieinamumas
600Tikėtina 2026-07-31
Min.: 1
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SiC MOSFETS SiC Through Hole HiP-247-4 N-Channel


STMicroelectronics SiC MOSFET Automotive-grade silicon carbide Power MOSFET 1200 V, 40 mOhm typ., 40 A in an HiP247 package
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499Prieinamumas
Min.: 1
Daugkart.: 1

SiC MOSFETS SiC Through Hole HiP-247-3 N-Channel


STMicroelectronics SiC MOSFET Silicon carbide Power MOSFET 650 V, 45 mOhm typ., 30 A in an HiP247-4 package
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517Prieinamumas
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SiC MOSFETS SiC Through Hole HiP247-4 N-Channel


STMicroelectronics SiC MOSFET Automotive-grade silicon carbide Power MOSFET 650 V, 45 mOhm typ., 30 A in an HiP247-4 package
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481Prieinamumas
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SiC MOSFETS SiC Through Hole HiP247-4 N-Channel


STMicroelectronics SiC MOSFET Automotive-grade silicon carbide Power MOSFET 1200 V, 63 mOhm typ., 30 A in an HiP247-4 package
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287Prieinamumas
1 200Tikėtina 2026-08-10
Min.: 1
Daugkart.: 1

SiC MOSFETS SiC Through Hole HiP-247-4 N-Channel


STMicroelectronics SiC MOSFET Automotive-grade silicon carbide Power MOSFET 900 V, 12 mOhm typ., 110 A in an H2PAK-7 package
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52Prieinamumas
1 000Tikėtina 2026-08-17
Min.: 1
Daugkart.: 1
: 1 000

SiC MOSFETS SiC SMD/SMT H2PAK-7 N-Channel


STMicroelectronics SiC MOSFET Automotive-grade silicon carbide Power MOSFET 650 V, 20 mOhm typ., 55 A in an H2PAK-7 package
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57Prieinamumas
1 000Tikėtina 2027-03-12
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SiC MOSFETS SiC SMD/SMT H2PAK-7 N-Channel
STMicroelectronics SiC MOSFET Automotive-grade silicon carbide Power MOSFET 650 V, 40 mOhm typ., 30 A
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72Prieinamumas
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Min.: 1
Daugkart.: 1
: 600

SiC MOSFETS SiC SMD/SMT H2PAK-2 N-Channel


STMicroelectronics SiC MOSFET Automotive-grade silicon carbide Power MOSFET 1200 V, 63 mOhm typ., 30 A in an H2PAK-7 package
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64Prieinamumas
Min.: 1
Daugkart.: 1
: 1 000

SiC MOSFETS SiC SMD/SMT H2PAK-7 N-Channel
STMicroelectronics SiC MOSFET Automotive-grade silicon carbide Power MOSFET 650 V 40 mOhm typ. 30 A
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855Prieinamumas
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SiC MOSFETS SiC SMD/SMT N-Channel
STMicroelectronics SiC MOSFET Silicon carbide Power MOSFET 1700 V, 1.0 Ohm typ., 7 A in an HiP247 package
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496Prieinamumas
Min.: 1
Daugkart.: 1

SiC MOSFETS SiC Through Hole HiP-247-3 N-Channel
STMicroelectronics SiC MOSFET Automotive-grade silicon carbide Power MOSFET 1200 V, 169 mOhm typ., 20 A in an
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394Prieinamumas
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SiC MOSFETS SiC Through Hole N-Channel