Silicon Carbide Power MOSFETs

STMicroelectronics Silicon Carbide Power MOSFETs bring wide bandgap materials' advanced efficiency and reliability to a broader range of energy-conscious applications. These applications include inverters for electric/hybrid vehicles, solar or wind power generation, high-efficiency drives, power supplies, and smart-grid equipment. An extended voltage range from 650V to 1700V features excellent switching performance combined with very low on-state resistance RDS(on) per area Figure Of Merit. ST SiC MOSFETs allow the design of more efficient and compact systems. The STMicro 1200V SiC MOSFETs exhibit an outstanding temperature rating of 200°C for improved thermal design of power electronics systems. Compared to silicon MOSFET, SiC MOSFET also features significantly reduced switching losses with minimal variation versus the temperature.  

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STMicroelectronics SiC MOSFET Automotive-grade silicon carbide Power MOSFET 1200 V, 19.2 mOhm typ., 90 A 252Prieinamumas
600Tikėtina 2026-11-16
Min.: 1
Daugkart.: 1
Reel: 600

SiC MOSFETS
STMicroelectronics SiC MOSFET Automotive-grade silicon carbide Power MOSFET 650 V 40 mOhm typ. 30 A 969Prieinamumas
Min.: 1
Daugkart.: 1
Reel: 1 000

SiC MOSFETS SiC SMD/SMT N-Channel
STMicroelectronics MOSFETs N-channel 40 V, 0.85 mOhm typ., 120 A STripFET F7 Power MOSFET in a PowerFLAT 5x 2 681Prieinamumas
Min.: 1
Daugkart.: 1
Reel: 3 000

MOSFETs Si SMD/SMT PowerFLAT5x6-8 N-Channel
STMicroelectronics SiC MOSFET Silicon carbide Power MOSFET 650 V, 55 mOhm typ., 40 A in a PowerFLAT 8x8 HV pac 2 329Prieinamumas
Min.: 1
Daugkart.: 1
Reel: 3 000

SiC MOSFETS SiC SMD/SMT PowerFLAT-5 N-Channel
STMicroelectronics SiC MOSFET Automotive-grade silicon carbide Power MOSFET 1200 V, 16 mOhm typ., 112 A in an H2PAK-7 package 922Prieinamumas
Min.: 1
Daugkart.: 1
Reel: 1 000

SiC MOSFETS SiC SMD/SMT H2PAK-7 N-Channel
STMicroelectronics SiC MOSFET Automotive-grade silicon carbide Power MOSFET 750 V, 11.4 mOhm typ., 110 A in an HU3PAK package 274Prieinamumas
600Tikėtina 2026-03-09
Min.: 1
Daugkart.: 1
Reel: 600

SiC MOSFETS SiC SMD/SMT HU3PAK-7 N-Channel
STMicroelectronics SiC MOSFET Automotive-grade silicon carbide Power MOSFET 1200 V, 18.5 mOhm typ., 100 A in an HU3PAK package 739Prieinamumas
Min.: 1
Daugkart.: 1
Reel: 600

SiC MOSFETS SiC SMD/SMT HU3PAK-7 N-Channel


STMicroelectronics SiC MOSFET Automotive-grade silicon carbide Power MOSFET 1200 V, 18.5 mOhm typ., 100 A in an HiP247-4 package 513Prieinamumas
Min.: 1
Daugkart.: 1

SiC MOSFETS SiC Through Hole Hip247-4 N-Channel

STMicroelectronics SiC MOSFET Automotive-grade silicon carbide Power MOSFET 1200 V, 27 mOhm typ., 56 A in an HiP247 package 502Prieinamumas
Min.: 1
Daugkart.: 1

SiC MOSFETS SiC Through Hole HiP247-3 N-Channel
STMicroelectronics SiC MOSFET Automotive-grade silicon carbide Power MOSFET 650 V, 29 mOhm typ., 60 A in an H2PAK-7 package 1 082Prieinamumas
Min.: 1
Daugkart.: 1
Reel: 1 000

SiC MOSFETS SiC SMD/SMT H2PAK-7 N-Channel
STMicroelectronics SiC MOSFET Automotive-grade silicon carbide Power MOSFET 1200 V, 40 mOhm typ., 40 A in an HU3PAK package 1 011Prieinamumas
600Tikėtina 2027-01-04
Min.: 1
Daugkart.: 1
Reel: 600

SiC MOSFETS SiC SMD/SMT HU3PAK-7 N-Channel


STMicroelectronics SiC MOSFET Silicon carbide Power MOSFET 650 V, 45 mOhm typ., 30 A in an HiP247-4 package 547Prieinamumas
Min.: 1
Daugkart.: 1

SiC MOSFETS SiC Through Hole HiP247-4 N-Channel


STMicroelectronics SiC MOSFET Automotive-grade silicon carbide Power MOSFET 650 V, 45 mOhm typ., 30 A in an HiP247-4 package 641Prieinamumas
Min.: 1
Daugkart.: 1

SiC MOSFETS SiC Through Hole HiP247-4 N-Channel
STMicroelectronics SiC MOSFET Silicon carbide Power MOSFET 650 V, 58 mOhm typ., 30 A in a TO-LL package 1 779Prieinamumas
Min.: 1
Daugkart.: 1
Reel: 1 800

SiC MOSFETS SiC SMD/SMT TOLL-8 N-Channel
STMicroelectronics SiC MOSFET Automotive-grade silicon carbide Power MOSFET 1200 V, 27 mOhm typ., 55 A in an H2PAK-7 package 14Prieinamumas
2 000Tikėtina 2026-10-12
Min.: 1
Daugkart.: 1
Reel: 1 000

SiC MOSFETS SiC SMD/SMT H2PAK-7 N-Channel
STMicroelectronics SiC MOSFET Silicon carbide Power MOSFET 650 V, 40 mOhm typ., 35 A in a TO-LL package 37Prieinamumas
Min.: 1
Daugkart.: 1
Reel: 1 800

SiC MOSFETS SiC SMD/SMT TOLL-8 N-Channel


STMicroelectronics SiC MOSFET Automotive-grade silicon carbide Power MOSFET 900 V, 12 mOhm typ., 110 A in an H2PAK-7 package 425Prieinamumas
Min.: 1
Daugkart.: 1
Reel: 1 000

SiC MOSFETS SiC SMD/SMT H2PAK-7 N-Channel


STMicroelectronics SiC MOSFET Automotive-grade silicon carbide Power MOSFET 650 V, 20 mOhm typ., 55 A in an H2PAK-7 package 202Prieinamumas
Min.: 1
Daugkart.: 1
Reel: 1 000

SiC MOSFETS SiC SMD/SMT H2PAK-7 N-Channel


STMicroelectronics SiC MOSFET Automotive-grade silicon carbide Power MOSFET 650 V, 20 mOhm typ., 55 A in an HiP247-4 package 552Prieinamumas
Min.: 1
Daugkart.: 1

SiC MOSFETS SiC Through Hole HiP-247-4 N-Channel


STMicroelectronics SiC MOSFET Automotive-grade silicon carbide Power MOSFET 650 V, 29 mOhm typ., 60 A 353Prieinamumas
Min.: 1
Daugkart.: 1

SiC MOSFETS SiC Through Hole HiP-247-4 N-Channel


STMicroelectronics SiC MOSFET Automotive-grade silicon carbide Power MOSFET 1200 V, 40 mOhm typ., 40 A 698Prieinamumas
Min.: 1
Daugkart.: 1

SiC MOSFETS SiC Through Hole HiP-247-4 N-Channel


STMicroelectronics SiC MOSFET Automotive-grade silicon carbide Power MOSFET 1200 V, 40 mOhm typ., 40 A in an HiP247 package 629Prieinamumas
Min.: 1
Daugkart.: 1

SiC MOSFETS SiC Through Hole HiP-247-3 N-Channel


STMicroelectronics SiC MOSFET Automotive-grade silicon carbide Power MOSFET 1200 V, 63 mOhm typ., 30 A in an HiP247-4 package 483Prieinamumas
1 200Tikėtina 2026-04-20
Min.: 1
Daugkart.: 1

SiC MOSFETS SiC Through Hole HiP-247-4 N-Channel
STMicroelectronics SiC MOSFET Automotive-grade silicon carbide Power MOSFET 650 V, 40 mOhm typ., 30 A 142Prieinamumas
Min.: 1
Daugkart.: 1
Reel: 600

SiC MOSFETS SiC SMD/SMT H2PAK-2 N-Channel


STMicroelectronics SiC MOSFET Automotive-grade silicon carbide Power MOSFET 650 V, 58 mOhm typ., 30 A 57Prieinamumas
Min.: 1
Daugkart.: 1

SiC MOSFETS SiC Through Hole HiP-247-4 N-Channel