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Silicon Carbide Power MOSFETs

STMicroelectronics Silicon Carbide Power MOSFETs bring wide bandgap materials' advanced efficiency and reliability to a broader range of energy-conscious applications. These applications include inverters for electric/hybrid vehicles, solar or wind power generation, high-efficiency drives, power supplies, and smart-grid equipment. An extended voltage range from 650V to 1700V features excellent switching performance combined with very low on-state resistance R_DS(on) per area Figure Of Merit. ST SiC MOSFETs allow the design of more efficient and compact systems. The STMicro 1200V SiC MOSFETs exhibit an outstanding temperature rating of 200°C for improved thermal design of power electronics systems. Compared to silicon MOSFET, SiC MOSFET also features significantly reduced switching losses with minimal variation versus the temperature.

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Dalies Nr.

SiC MOSFET Automotive-grade silicon carbide Power MOSFET 1200 V, 19.2 mOhm typ., 90 A

SCT019HU120G3AG
STMicroelectronics
1: 17,27 €
12Prieinamumas
600Tikėtina 2027-02-08
Naujas Produktas

Gam. dalies Nr.
SCT019HU120G3AG

„Mouser“ Dalies Nr.
511-SCT019HU120G3AG

Naujas Produktas

STMicroelectronics

SiC MOSFET Automotive-grade silicon carbide Power MOSFET 1200 V, 19.2 mOhm typ., 90 A

Sužinokite Daugiau

Duomenų Lapas

12Prieinamumas

600Tikėtina 2027-02-08

Pjaunama Juosta

17,27 €

14,21 €

12,29 €

Ritė

10,86 €

Min.: 1
Daugkart.: 1

: 600

SiC MOSFETS

SiC MOSFET Automotive-grade silicon carbide Power MOSFET 1200 V, 75 mOhm typ., 33 A in an H

SCTW40N120G2VAG
STMicroelectronics
1: 15,83 €
551Prieinamumas

Gam. dalies Nr.
SCTW40N120G2VAG

„Mouser“ Dalies Nr.
511-SCTW40N120G2VAG

STMicroelectronics

SiC MOSFET Automotive-grade silicon carbide Power MOSFET 1200 V, 75 mOhm typ., 33 A in an H

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Duomenų Lapas

551Prieinamumas

15,83 €

9,82 €

8,51 €

8,33 €

Min.: 1
Daugkart.: 1

SiC MOSFETS

SiC

Through Hole

HiP-247-3

N-Channel

SiC MOSFET Silicon carbide Power MOSFET 650 V, 55 mOhm typ., 40 A in a PowerFLAT 8x8 HV pac

SCTL35N65G2V
STMicroelectronics
1: 13,78 €
2 311Prieinamumas

Gam. dalies Nr.
SCTL35N65G2V

„Mouser“ Dalies Nr.
511-SCTL35N65G2V

STMicroelectronics

SiC MOSFET Silicon carbide Power MOSFET 650 V, 55 mOhm typ., 40 A in a PowerFLAT 8x8 HV pac

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Duomenų Lapas

2 311Prieinamumas

Pjaunama Juosta

13,78 €

9,74 €

8,95 €

8,94 €

8,61 €

Ritė

7,61 €

„MouseReel“ galima

Min.: 1
Daugkart.: 1

: 3 000

SiC MOSFETS

SiC

SMD/SMT

PowerFLAT-5

N-Channel

SiC MOSFET Silicon carbide Power MOSFET 650 V, 18 mOhm typ., 40 A in a PowerFLAT 8x8 HV pac

SCTL90N65G2V
STMicroelectronics
1: 25,08 €
1 597Prieinamumas

Gam. dalies Nr.
SCTL90N65G2V

„Mouser“ Dalies Nr.
511-SCTL90N65G2V

STMicroelectronics

SiC MOSFET Silicon carbide Power MOSFET 650 V, 18 mOhm typ., 40 A in a PowerFLAT 8x8 HV pac

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Duomenų Lapas

1 597Prieinamumas

Pjaunama Juosta

25,08 €

19,18 €

19,14 €

19,13 €

Ritė

16,30 €

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Min.: 1
Daugkart.: 1

: 3 000

SiC MOSFETS

SiC

SMD/SMT

PowerFLAT-5

N-Channel

SiC MOSFET Automotive-grade silicon carbide Power MOSFET 1200 V, 16 mOhm typ., 112 A in an H2PAK-7 package

SCT016H120G3AG
STMicroelectronics
1: 20,05 €
597Prieinamumas
Naujas Produktas

Gam. dalies Nr.
SCT016H120G3AG

„Mouser“ Dalies Nr.
511-SCT016H120G3AG

Naujas Produktas

STMicroelectronics

SiC MOSFET Automotive-grade silicon carbide Power MOSFET 1200 V, 16 mOhm typ., 112 A in an H2PAK-7 package

Sužinokite Daugiau

Duomenų Lapas

597Prieinamumas

Pjaunama Juosta

20,05 €

14,51 €

14,48 €

14,47 €

Ritė

13,52 €

„MouseReel“ galima

Min.: 1
Daugkart.: 1

: 1 000

SiC MOSFETS

SiC

SMD/SMT

H2PAK-7

N-Channel

SiC MOSFET Automotive-grade silicon carbide Power MOSFET 1200 V, 18.5 mOhm typ., 100 A in an HU3PAK package

SCT020HU120G3AG
STMicroelectronics
1: 17,64 €
402Prieinamumas
Naujas Produktas

Gam. dalies Nr.
SCT020HU120G3AG

„Mouser“ Dalies Nr.
511-SCT020HU120G3AG

Naujas Produktas

STMicroelectronics

SiC MOSFET Automotive-grade silicon carbide Power MOSFET 1200 V, 18.5 mOhm typ., 100 A in an HU3PAK package

Sužinokite Daugiau

Duomenų Lapas

402Prieinamumas

Pjaunama Juosta

17,64 €

14,62 €

12,64 €

Ritė

11,74 €

Pasiūlymas

„MouseReel“ galima

Min.: 1
Daugkart.: 1

: 600

SiC MOSFETS

SiC

SMD/SMT

HU3PAK-7

N-Channel

SiC MOSFET Automotive-grade silicon carbide Power MOSFET 650 V, 29 mOhm typ., 60 A in an H2PAK-7 package

SCT027H65G3AG
STMicroelectronics
1: 10,92 €
964Prieinamumas
Naujas Produktas

Gam. dalies Nr.
SCT027H65G3AG

„Mouser“ Dalies Nr.
511-SCT027H65G3AG

Naujas Produktas

STMicroelectronics

SiC MOSFET Automotive-grade silicon carbide Power MOSFET 650 V, 29 mOhm typ., 60 A in an H2PAK-7 package

Sužinokite Daugiau

Duomenų Lapas

964Prieinamumas

Pjaunama Juosta

10,92 €

7,64 €

6,64 €

Ritė

6,20 €

Pasiūlymas

Min.: 1
Daugkart.: 1

: 1 000

SiC MOSFETS

SiC

SMD/SMT

H2PAK-7

N-Channel

SiC MOSFET Automotive-grade silicon carbide Power MOSFET 1200 V, 40 mOhm typ., 40 A in an HU3PAK package

SCT040HU120G3AG
STMicroelectronics
1: 12,12 €
602Prieinamumas
600Tikėtina 2026-08-10
Naujas Produktas

Gam. dalies Nr.
SCT040HU120G3AG

„Mouser“ Dalies Nr.
511-SCT040HU120G3AG

Naujas Produktas

STMicroelectronics

SiC MOSFET Automotive-grade silicon carbide Power MOSFET 1200 V, 40 mOhm typ., 40 A in an HU3PAK package

Sužinokite Daugiau

Duomenų Lapas

602Prieinamumas

600Tikėtina 2026-08-10

Pjaunama Juosta

12,12 €

8,70 €

8,05 €

Ritė

7,03 €

6,70 €

„MouseReel“ galima

Min.: 1
Daugkart.: 1

: 600

SiC MOSFETS

SiC

SMD/SMT

HU3PAK-7

N-Channel

SiC MOSFET Silicon carbide Power MOSFET 650 V, 58 mOhm typ., 30 A in a TO-LL package

SCT055TO65G3
STMicroelectronics
1: 7,34 €
1 764Prieinamumas
Naujas Produktas

Gam. dalies Nr.
SCT055TO65G3

„Mouser“ Dalies Nr.
511-SCT055TO65G3

Naujas Produktas

STMicroelectronics

SiC MOSFET Silicon carbide Power MOSFET 650 V, 58 mOhm typ., 30 A in a TO-LL package

Sužinokite Daugiau

Duomenų Lapas

1 764Prieinamumas

Pjaunama Juosta

7,34 €

5,03 €

4,44 €

4,03 €

3,69 €

Ritė

3,69 €

Min.: 1
Daugkart.: 1

: 1 800

SiC MOSFETS

SiC

SMD/SMT

TOLL-8

N-Channel

SiC MOSFET Silicon carbide Power MOSFET 650 V, 40 mOhm typ., 35 A in a TO-LL package

SCT040TO65G3
STMicroelectronics
1: 8,25 €
37Prieinamumas
1 800Tikėtina 2026-07-13
Naujas Produktas

Gam. dalies Nr.
SCT040TO65G3

„Mouser“ Dalies Nr.
511-SCT040TO65G3

Naujas Produktas

STMicroelectronics

SiC MOSFET Silicon carbide Power MOSFET 650 V, 40 mOhm typ., 35 A in a TO-LL package

Sužinokite Daugiau

Duomenų Lapas

37Prieinamumas

1 800Tikėtina 2026-07-13

Pjaunama Juosta

8,25 €

6,21 €

4,61 €

4,59 €

4,44 €

Ritė

4,30 €

Min.: 1
Daugkart.: 1

: 1 800

SiC MOSFETS

SiC

SMD/SMT

TOLL-8

N-Channel

SiC MOSFET Automotive-grade silicon carbide Power MOSFET 650 V, 20 mOhm typ., 55 A in an H2PAK-7 package

SCT018H65G3AG
STMicroelectronics
1: 14,20 €
157Prieinamumas

Gam. dalies Nr.
SCT018H65G3AG

„Mouser“ Dalies Nr.
511-SCT018H65G3AG

STMicroelectronics

SiC MOSFET Automotive-grade silicon carbide Power MOSFET 650 V, 20 mOhm typ., 55 A in an H2PAK-7 package

Sužinokite Daugiau

Duomenų Lapas

157Prieinamumas

Pjaunama Juosta

14,20 €

10,05 €

9,61 €

8,57 €

Ritė

7,27 €

„MouseReel“ galima

Min.: 1
Daugkart.: 1

: 1 000

SiC MOSFETS

SiC

SMD/SMT

H2PAK-7

N-Channel

SiC MOSFET Automotive-grade silicon carbide Power MOSFET 650 V, 20 mOhm typ., 55 A in an HiP247-4 package

SCT018W65G3-4AG
STMicroelectronics
1: 15,91 €
505Prieinamumas

Gam. dalies Nr.
SCT018W65G3-4AG

„Mouser“ Dalies Nr.
511-SCT018W65G3-4AG

STMicroelectronics

SiC MOSFET Automotive-grade silicon carbide Power MOSFET 650 V, 20 mOhm typ., 55 A in an HiP247-4 package

Sužinokite Daugiau

Duomenų Lapas

505Prieinamumas

15,91 €

12,18 €

9,31 €

8,49 €

7,36 €

Min.: 1
Daugkart.: 1

SiC MOSFETS

SiC

Through Hole

HiP-247-4

N-Channel

SiC MOSFET Automotive-grade silicon carbide Power MOSFET 1200 V, 18.5 mOhm typ., 100 A in an HiP247-4 package

SCT020W120G3-4AG
STMicroelectronics
1: 17,40 €
426Prieinamumas

Gam. dalies Nr.
SCT020W120G3-4AG

„Mouser“ Dalies Nr.
511-SCT020W120G3-4AG

STMicroelectronics

SiC MOSFET Automotive-grade silicon carbide Power MOSFET 1200 V, 18.5 mOhm typ., 100 A in an HiP247-4 package

Sužinokite Daugiau

Duomenų Lapas

426Prieinamumas

17,40 €

10,88 €

9,45 €

9,40 €

Min.: 1
Daugkart.: 1

SiC MOSFETS

SiC

Through Hole

Hip247-4

N-Channel

SiC MOSFET Automotive-grade silicon carbide Power MOSFET 1200 V, 27 mOhm typ., 56 A in an HiP247-4 package

SCT025W120G3-4AG
STMicroelectronics
1: 17,67 €
504Prieinamumas
1 200Tikėtina 2026-08-31

Gam. dalies Nr.
SCT025W120G3-4AG

„Mouser“ Dalies Nr.
511-SCT025W120G3-4AG

STMicroelectronics

SiC MOSFET Automotive-grade silicon carbide Power MOSFET 1200 V, 27 mOhm typ., 56 A in an HiP247-4 package

Sužinokite Daugiau

Duomenų Lapas

504Prieinamumas

1 200Tikėtina 2026-08-31

17,67 €

11,12 €

10,09 €

9,57 €

Min.: 1
Daugkart.: 1

SiC MOSFETS

SiC

Through Hole

HiP-247-4

N-Channel

SiC MOSFET Automotive-grade silicon carbide Power MOSFET 1200 V, 27 mOhm typ., 56 A in an HiP247 package

SCT025W120G3AG
STMicroelectronics
1: 16,30 €
453Prieinamumas

Gam. dalies Nr.
SCT025W120G3AG

„Mouser“ Dalies Nr.
511-SCT025W120G3AG

STMicroelectronics

SiC MOSFET Automotive-grade silicon carbide Power MOSFET 1200 V, 27 mOhm typ., 56 A in an HiP247 package

Sužinokite Daugiau

Duomenų Lapas

453Prieinamumas

16,30 €

10,14 €

8,79 €

8,65 €

Min.: 1
Daugkart.: 1

SiC MOSFETS

SiC

Through Hole

HiP247-3

N-Channel

SiC MOSFET Automotive-grade silicon carbide Power MOSFET 650 V, 29 mOhm typ., 60 A

SCT027W65G3-4AG
STMicroelectronics
1: 14,62 €
328Prieinamumas

Gam. dalies Nr.
SCT027W65G3-4AG

„Mouser“ Dalies Nr.
511-SCT027W65G3-4AG

STMicroelectronics

SiC MOSFET Automotive-grade silicon carbide Power MOSFET 650 V, 29 mOhm typ., 60 A

Sužinokite Daugiau

Duomenų Lapas

328Prieinamumas

14,62 €

13,98 €

6,34 €

Min.: 1
Daugkart.: 1

SiC MOSFETS

SiC

Through Hole

HiP-247-4

N-Channel

SiC MOSFET Automotive-grade silicon carbide Power MOSFET 1200 V, 40 mOhm typ., 40 A

SCT040W120G3-4AG
STMicroelectronics
1: 11,31 €
498Prieinamumas

Gam. dalies Nr.
SCT040W120G3-4AG

„Mouser“ Dalies Nr.
511-SCT040W120G3-4AG

STMicroelectronics

SiC MOSFET Automotive-grade silicon carbide Power MOSFET 1200 V, 40 mOhm typ., 40 A

Sužinokite Daugiau

Duomenų Lapas

498Prieinamumas

11,31 €

7,90 €

6,47 €

Min.: 1
Daugkart.: 1

SiC MOSFETS

SiC

Through Hole

HiP-247-4

N-Channel

SiC MOSFET Automotive-grade silicon carbide Power MOSFET 1200 V, 40 mOhm typ., 40 A in an HiP247 package

SCT040W120G3AG
STMicroelectronics
1: 11,22 €
530Prieinamumas

Gam. dalies Nr.
SCT040W120G3AG

„Mouser“ Dalies Nr.
511-SCT040W120G3AG

STMicroelectronics

SiC MOSFET Automotive-grade silicon carbide Power MOSFET 1200 V, 40 mOhm typ., 40 A in an HiP247 package

Sužinokite Daugiau

Duomenų Lapas

530Prieinamumas

11,22 €

7,84 €

6,40 €

Min.: 1
Daugkart.: 1

SiC MOSFETS

SiC

Through Hole

HiP-247-3

N-Channel

SiC MOSFET Silicon carbide Power MOSFET 650 V, 45 mOhm typ., 30 A in an HiP247-4 package

SCT040W65G3-4
STMicroelectronics
1: 9,31 €
537Prieinamumas

Gam. dalies Nr.
SCT040W65G3-4

„Mouser“ Dalies Nr.
511-SCT040W65G3-4

STMicroelectronics

SiC MOSFET Silicon carbide Power MOSFET 650 V, 45 mOhm typ., 30 A in an HiP247-4 package

Sužinokite Daugiau

Duomenų Lapas

537Prieinamumas

9,31 €

5,57 €

5,30 €

5,05 €

Min.: 1
Daugkart.: 1

SiC MOSFETS

SiC

Through Hole

HiP247-4

N-Channel

SiC MOSFET Automotive-grade silicon carbide Power MOSFET 650 V, 45 mOhm typ., 30 A in an HiP247-4 package

SCT040W65G3-4AG
STMicroelectronics
1: 10,78 €
481Prieinamumas

Gam. dalies Nr.
SCT040W65G3-4AG

„Mouser“ Dalies Nr.
511-SCT040W65G3-4AG

STMicroelectronics

SiC MOSFET Automotive-grade silicon carbide Power MOSFET 650 V, 45 mOhm typ., 30 A in an HiP247-4 package

Sužinokite Daugiau

Duomenų Lapas

481Prieinamumas

10,78 €

7,81 €

6,39 €

6,38 €

6,08 €

Min.: 1
Daugkart.: 1

SiC MOSFETS

SiC

Through Hole

HiP247-4

N-Channel

SiC MOSFET Automotive-grade silicon carbide Power MOSFET 650 V, 58 mOhm typ., 30 A

SCT055HU65G3AG
STMicroelectronics
1: 10,86 €
1 113Prieinamumas

Gam. dalies Nr.
SCT055HU65G3AG

„Mouser“ Dalies Nr.
511-SCT055HU65G3AG

STMicroelectronics

SiC MOSFET Automotive-grade silicon carbide Power MOSFET 650 V, 58 mOhm typ., 30 A

Sužinokite Daugiau

Duomenų Lapas

1 113Prieinamumas

Pjaunama Juosta

10,86 €

7,59 €

6,58 €

Ritė

6,14 €

„MouseReel“ galima

Min.: 1
Daugkart.: 1

: 600

SiC MOSFETS

SiC

SMD/SMT

HU3PAK-7

N-Channel

SiC MOSFET Automotive-grade silicon carbide Power MOSFET 1200 V, 63 mOhm typ., 30 A in an HiP247-4 package

SCT070W120G3-4AG
STMicroelectronics
1: 10,87 €
351Prieinamumas
1 200Tikėtina 2026-08-10

Gam. dalies Nr.
SCT070W120G3-4AG

„Mouser“ Dalies Nr.
511-SCT070W120G3-4AG

STMicroelectronics

SiC MOSFET Automotive-grade silicon carbide Power MOSFET 1200 V, 63 mOhm typ., 30 A in an HiP247-4 package

Sužinokite Daugiau

Duomenų Lapas

351Prieinamumas

1 200Tikėtina 2026-08-10

10,87 €

9,10 €

6,87 €

6,14 €

Min.: 1
Daugkart.: 1

SiC MOSFETS

SiC

Through Hole

HiP-247-4

N-Channel

SiC MOSFET Automotive-grade silicon carbide Power MOSFET 900 V, 12 mOhm typ., 110 A in an H2PAK-7 package

SCT012H90G3AG
STMicroelectronics
1: 17,68 €
78Prieinamumas
1 000Tikėtina 2026-08-17

Gam. dalies Nr.
SCT012H90G3AG

„Mouser“ Dalies Nr.
511-SCT012H90G3AG

STMicroelectronics

SiC MOSFET Automotive-grade silicon carbide Power MOSFET 900 V, 12 mOhm typ., 110 A in an H2PAK-7 package

Sužinokite Daugiau

Duomenų Lapas

78Prieinamumas

1 000Tikėtina 2026-08-17

Pjaunama Juosta

17,68 €

12,69 €

12,33 €

Ritė

11,51 €

Min.: 1
Daugkart.: 1

: 1 000

SiC MOSFETS

SiC

SMD/SMT

H2PAK-7

N-Channel

SiC MOSFET Automotive-grade silicon carbide Power MOSFET 650 V, 40 mOhm typ., 30 A

SCT040HU65G3AG
STMicroelectronics
1: 11,32 €
130Prieinamumas

Gam. dalies Nr.
SCT040HU65G3AG

„Mouser“ Dalies Nr.
511-SCT040HU65G3AG

STMicroelectronics

SiC MOSFET Automotive-grade silicon carbide Power MOSFET 650 V, 40 mOhm typ., 30 A

Sužinokite Daugiau

Duomenų Lapas

130Prieinamumas

Pjaunama Juosta

11,32 €

8,18 €

6,65 €

Ritė

5,64 €

„MouseReel“ galima

Min.: 1
Daugkart.: 1

: 600

SiC MOSFETS

SiC

SMD/SMT

H2PAK-2

N-Channel

SiC MOSFET Automotive-grade silicon carbide Power MOSFET 650 V, 58 mOhm typ., 30 A

SCT055W65G3-4AG
STMicroelectronics
1: 12,74 €
30Prieinamumas
600Pagal užsakymą

Gam. dalies Nr.
SCT055W65G3-4AG

„Mouser“ Dalies Nr.
511-SCT055W65G3-4AG

STMicroelectronics

SiC MOSFET Automotive-grade silicon carbide Power MOSFET 650 V, 58 mOhm typ., 30 A

Sužinokite Daugiau

Duomenų Lapas

30Prieinamumas

600Pagal užsakymą

12,74 €

10,14 €

9,20 €

6,07 €

Min.: 1
Daugkart.: 1

SiC MOSFETS

SiC

Through Hole

HiP-247-4

N-Channel

Silicon Carbide Power MOSFETs

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