Rezultatai: 36
Pasirinkite Vaizdas Dalies Nr. Gam. Aprašymas Duomenų Lapas Prieinamumas Kainodara (EUR) Filtruokite lentelėje pateiktus rezultatus pagal vieneto kainą, remdamiesi kiekiu. Qty. RoHS ECAD modelis Technologijos Montavimo stilius Pakuotė / Korpusas Tranzistoriaus poliškumas Kanalų skaičius Vds - nutekėjimo-šaltinio pramušimo įtampa svar. – nuolatinio išleidimo srovė RDS On - Drain-Source Varža Vgs - užtūros-šaltinio įtampa Vgs th - užtūros-šaltinio slenkstinė įtampa Qg – vartų krūvis Minimali darbinė temperatūra Didžiausia darbinė temperatūra Pd - skaidos galia Kanalas Mode Kvalifikacija Prekinis pavadinimas Pakavimas
Infineon Technologies MOSFETs MOSFET N CH 60V 95A TO-220AB 57 904Prieinamumas
Min.: 1
Daugkart.: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 60 V 95 A 4.9 mOhms - 20 V, 20 V 3.7 V 75 nC - 55 C + 175 C 125 W Enhancement StrongIRFET Tube
Infineon Technologies MOSFETs IFX FET 60V 4 772Prieinamumas
Min.: 1
Daugkart.: 1
: 6 000
Si SMD/SMT WHTFN-9 N-Channel 1 Channel 60 V 21 A 3 mOhms - 20 V, 20 V 3.3 V 49 nC - 55 C + 175 C 2.5 W Enhancement Reel, Cut Tape
Infineon Technologies MOSFETs IFX FET 60V 2 869Prieinamumas
Min.: 1
Daugkart.: 1
: 2 000
Si SMD/SMT N-Channel 1 Channel 60 V 399 A 1.1 Ohms - 20 V, 20 V 3.3 V 110 nC - 55 C + 175 C 313 W Enhancement Reel, Cut Tape
Infineon Technologies MOSFETs IFX FET 60V 4 063Prieinamumas
Min.: 1
Daugkart.: 1
: 5 000

Si SMD/SMT N-Channel 1 Channel 60 V 137 A 3 mOhms - 20 V, 20 V 3.3 V 39 nC - 55 C + 175 C 107 W Enhancement Reel, Cut Tape, MouseReel
Infineon Technologies MOSFETs OptiMOS 5 60 V switching optimized power MOSFET in PQFN 5x6 Drain-Down package 3 490Prieinamumas
Min.: 1
Daugkart.: 1
: 5 000

Si SMD/SMT TDSON-8 N-Channel 1 Channel 60 V 259 A 1.5 mOhms 20 V 3.3 V 70 nC - 55 C + 175 C 188 W Enhancement OptiMOS Reel, Cut Tape
Infineon Technologies MOSFETs OptiMOS 5 Power-Transistor,60V 2 900Prieinamumas
Min.: 1
Daugkart.: 1
: 3 000

Si SMD/SMT TSON-12 N-Channel 1 Channel 60 V 510 A 1 mOhms - 20 V, 20 V 2.8 V 190 nC - 55 C + 175 C 300 W Enhancement OptiMOS Reel, Cut Tape
Infineon Technologies MOSFETs IFX FET 60V 3 484Prieinamumas
Min.: 1
Daugkart.: 1
: 3 000

Si SMD/SMT TFN-10 N-Channel 2 Channel 60 V 233 A 1.6 mOhms - 20 V, 20 V 3.3 V 68 nC - 55 C + 175 C 167 W Enhancement Reel, Cut Tape
Infineon Technologies MOSFETs 60 V, N-Ch, 2.2 m? max, Logic Level, Automotive MOSFET, SSO8 (5x6), OptiMOS-5 6 414Prieinamumas
Min.: 1
Daugkart.: 1
: 5 000

Si SMD/SMT TDSON-8 N-Channel 1 Channel 60 V 170 A 2.2 mOhms - 20 V, 20 V 1.7 V 77 nC - 55 C + 175 C 136 W Enhancement AEC-Q101 OptiMOS Reel, Cut Tape, MouseReel
Infineon Technologies MOSFETs 60 V, N-Ch, 3.2 m? max, Normal Level, Automotive MOSFET, SSO8 (5x6), OptiMOS-5 3 575Prieinamumas
Min.: 1
Daugkart.: 1
: 5 000

Si SMD/SMT TDSON-8 N-Channel 1 Channel 60 V 120 A 3.23 mOhms - 20 V, 20 V 2.8 V 47 nC - 55 C + 175 C 94 W Enhancement AEC-Q101 OptiMOS Reel, Cut Tape, MouseReel


Infineon Technologies MOSFETs IFX FET 60V 807Prieinamumas
1 800Tikėtina 2026-07-09
Min.: 1
Daugkart.: 1
: 1 800

Si SMD/SMT HDSOP-16 N-Channel 1 Channel 60 V 311 A 1.2 mOhms - 20 V, 20 V 2.1 V 106 nC - 55 C + 175 C 214 W Enhancement Reel, Cut Tape
Infineon Technologies MOSFETs IFX FET 60V 4 456Prieinamumas
Min.: 1
Daugkart.: 1
: 5 000

Si SMD/SMT TTFN-9 N-Channel 1 Channel 60 V 151 A 2.2 mOhms - 20 V, 20 V 2.3 V 53 nC - 55 C + 175 C 100 W Enhancement Reel, Cut Tape
Infineon Technologies MOSFETs IFX FET 60V 5 330Prieinamumas
Min.: 1
Daugkart.: 1
: 6 000

Si SMD/SMT WHSON-8 N-Channel 1 Channel 60 V 151 A - 20 V, 20 V 2.3 V - 55 C + 175 C Enhancement OptiMOS Reel, Cut Tape
Infineon Technologies MOSFETs IFX FET 60V 1 603Prieinamumas
Min.: 1
Daugkart.: 1
: 6 000
Si SMD/SMT WHSON-8 N-Channel 1 Channel 60 V 21 A 3 mOhms - 20 V, 20 V 3.3 V 49 nC - 55 C + 175 C 2.5 W Enhancement Reel, Cut Tape, MouseReel
Infineon Technologies MOSFETs N-Ch 40V 100A TDSON-8 FL OptiMOS 49 265Prieinamumas
Min.: 1
Daugkart.: 1
: 5 000

Si SMD/SMT TDSON-8 N-Channel 1 Channel 40 V 100 A 1 mOhms - 20 V, 20 V 1.2 V 133 nC - 55 C + 150 C 139 W Enhancement OptiMOS Reel, Cut Tape, MouseReel
Infineon Technologies MOSFETs IFX FET 40V 33 858Prieinamumas
95 000Tikėtina 2026-07-02
Min.: 1
Daugkart.: 1
: 5 000

Si SMD/SMT TDSON-FL-8 N-Channel 1 Channel 40 V 100 A 2.2 mOhms - 20 V, 20 V 1.3 V 28 nC - 55 C + 175 C 79 W Enhancement OptiMOS Reel, Cut Tape, MouseReel
Infineon Technologies MOSFETs OptiMOS 5 Power-Transistor,60V 290Prieinamumas
Min.: 1
Daugkart.: 1
: 3 000

Si SMD/SMT TSON-12 N-Channel 1 Channel 60 V 394 A 1.47 mOhms - 20 V, 20 V 2.8 V 137 nC - 55 C + 175 C 250 W Enhancement OptiMOS Reel, Cut Tape
Infineon Technologies MOSFETs OptiMOS 5 Power-Transistor,60V 300Prieinamumas
Min.: 1
Daugkart.: 1
: 3 000

Si SMD/SMT TSON-12 N-Channel 1 Channel 60 V 339 A 1.72 mOhms - 20 V, 20 V 2.8 V 115 nC - 55 C + 175 C 214 W Enhancement OptiMOS Reel, Cut Tape
Infineon Technologies MOSFETs IFX FET 60V 69Prieinamumas
4 000Pagal užsakymą
Min.: 1
Daugkart.: 1
: 2 000

Si SMD/SMT HSOF-8 N-Channel 1 Channel 60 V 427 A 1.2 mOhms - 20 V, 20 V 2.8 V 171 nC - 55 C + 175 C 300 W Enhancement Reel, Cut Tape
Infineon Technologies MOSFETs IFX FET 60V 87Prieinamumas
6 000Tikėtina 2027-05-27
Min.: 1
Daugkart.: 1
: 6 000

Si SMD/SMT WHSON-8 N-Channel 1 Channel 60 V 151 A - 20 V, 20 V 2.3 V - 55 C + 175 C Enhancement OptiMOS Reel, Cut Tape
Infineon Technologies MOSFETs MOSFET_)40V 60V) 10 981Prieinamumas
10 000Tikėtina 2027-05-27
Min.: 1
Daugkart.: 1
: 5 000

Si SMD/SMT TSDSON-8-33 N-Channel 1 Channel 60 V 40 A 5 mOhms - 16 V, 16 V 2.2 V 28 nC - 55 C + 175 C 71 W Enhancement AEC-Q101 OptiMOS Reel, Cut Tape, MouseReel
Infineon Technologies MOSFETs IFX FET 60V 2 279Prieinamumas
2 000Tikėtina 2026-07-02
Min.: 1
Daugkart.: 1
: 2 000

Si SMD/SMT N-Channel 1 Channel 60 V 454 A 800 uOhms - 20 V, 20 V 3.6 V 185 nC - 55 C + 150 C 278 W Enhancement Reel, Cut Tape, MouseReel
Infineon Technologies MOSFETs IFX FET 60V 3 063Prieinamumas
Min.: 1
Daugkart.: 1
: 5 000

Si SMD/SMT N-Channel 1 Channel 60 V 330 A 1.05 mOhms - 20 V, 20 V 3.3 V 115 nC - 55 C + 175 C 214 W Enhancement Reel, Cut Tape
Infineon Technologies IPP029N06NXKSA1
Infineon Technologies MOSFETs OptiMOS Power-Transistor,60V 336Prieinamumas
500Tikėtina 2026-07-09
Min.: 1
Daugkart.: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 60 V 84 A 2.9 mOhms - 20 V, 20 V 3.3 V 56 nC - 55 C + 175 C 38 W Enhancement OptiMOS Tube
Infineon Technologies MOSFETs N-Ch 60V 46A TDSON-8 374Prieinamumas
Min.: 1
Daugkart.: 1
: 5 000

Si SMD/SMT TDSON-8 N-Channel 1 Channel 60 V 46 A 8 mOhms - 20 V, 20 V 2.1 V 15 nC - 55 C + 150 C 36 W Enhancement OptiMOS Reel, Cut Tape, MouseReel
Infineon Technologies MOSFETs MOSFET_)40V 60V) 2 812Prieinamumas
5 000Tikėtina 2026-07-09
Min.: 1
Daugkart.: 1
: 5 000

Si SMD/SMT TDSON-8 N-Channel 1 Channel 60 V 41 A 10.2 mOhms - 20 V, 20 V 3.4 V 12.5 nC - 55 C + 175 C 42 W Enhancement AEC-Q101 OptiMOS Reel, Cut Tape, MouseReel