Experience the Difference in Power

Infineon is the leader in the power semiconductor market. With more than 20 years of experience and as the innovator of the revolutionary CoolMOS™ super junction MOSFET technology, Infineon continues pioneering in the power management field. Customers can select based on individual design/system requirements from the industry's broadest silicon-based SJ MOSFET portfolio. As one of the few manufacturers mastering all three main power technologies, Infineon complements this assortment with a groundbreaking wide bandgap (WBG) offering. This offering comprises silicon-carbide-based CoolSiC™ MOSFETs, matching diodes, and gallium-nitride-based CoolGaN™ e-mode HEMTs. Solutions are available, ranging from exceptional price performance through unrivaled robustness to best-in-class devices. This enables customers to build more efficient, environmentally friendly, sustainable applications.

Rezultatai: 340
Pasirinkite Vaizdas Dalies Nr. Gam. Aprašymas Duomenų Lapas Prieinamumas Kainodara (EUR) Filtruokite lentelėje pateiktus rezultatus pagal vieneto kainą, remdamiesi kiekiu. Qty. RoHS

Infineon Technologies Gate Tvarkyklės 1200V Isolated 1-CH, 3.5A,Separate Outpu 2 785Prieinamumas
Min.: 1
Daugkart.: 1
: 2 500

Infineon Technologies SiC SCHOTTKY diodai SIC CHIP/DISCRETE 720Prieinamumas
Min.: 1
Daugkart.: 1

Infineon Technologies MOSFETs LOW POWER_NEW 22 707Prieinamumas
Min.: 1
Daugkart.: 1
: 2 500


Infineon Technologies MOSFETs HIGH POWER_NEW 2 826Prieinamumas
Min.: 1
Daugkart.: 1

Infineon Technologies MOSFETs HIGH POWER_NEW 2 061Prieinamumas
Min.: 1
Daugkart.: 1
: 1 000

Infineon Technologies MOSFETs CONSUMER 4 860Prieinamumas
Min.: 1
Daugkart.: 1

Infineon Technologies MOSFETs CONSUMER 19 274Prieinamumas
Min.: 1
Daugkart.: 1
: 2 500

Infineon Technologies MOSFETs LOW POWER_NEW 4 463Prieinamumas
Min.: 1
Daugkart.: 1
: 2 500

Infineon Technologies Gate Tvarkyklės 600V half-bridge 0.7A,integrated BSD 3 159Prieinamumas
Min.: 1
Daugkart.: 1
: 2 500

Infineon Technologies MOSFETs AUTOMOTIVE_COOLMOS 826Prieinamumas
Min.: 1
Daugkart.: 1
: 1 000
Infineon Technologies SiC SCHOTTKY diodai SIC DIODES 1 798Prieinamumas
Min.: 1
Daugkart.: 1
: 2 500

Infineon Technologies Gate Tvarkyklės 1200V Isolated 1-CH, 9.4A, SEP Output 1 274Prieinamumas
Min.: 1
Daugkart.: 1
: 1 000

Infineon Technologies SiC SCHOTTKY diodai SIC DIODES 6 715Prieinamumas
Min.: 1
Daugkart.: 1
: 1 700

Infineon Technologies Gate Tvarkyklės 1200V Isolated 1-CH, 3.5A, UL, SEP Outpu 2 250Prieinamumas
Min.: 1
Daugkart.: 1
: 1 000

Infineon Technologies Gate Tvarkyklės 1200V Isolated 1-CH, 9.4A, SEP Output 4 994Prieinamumas
Min.: 1
Daugkart.: 1
: 1 000

Infineon Technologies SiC SCHOTTKY diodai SIC DIODES 5 041Prieinamumas
Min.: 1
Daugkart.: 1
: 2 500

Infineon Technologies MOSFETs HIGH POWER_NEW 831Prieinamumas
Min.: 1
Daugkart.: 1
: 1 000

Infineon Technologies MOSFETs LOW POWER_NEW 1 441Prieinamumas
Min.: 1
Daugkart.: 1

Infineon Technologies Gate Tvarkyklės DRIVER-IC 898Prieinamumas
Min.: 1
Daugkart.: 1
: 1 000

Infineon Technologies Gate Tvarkyklės Dual Channel IGBT Driver IC +/-1200V 823Prieinamumas
Min.: 1
Daugkart.: 1
: 1 000

Infineon Technologies Gate Tvarkyklės 1200V Isolated 1-CH, 3.5A,Separate Outpu 1 245Prieinamumas
Min.: 1
Daugkart.: 1
: 1 000

Infineon Technologies SiC SCHOTTKY diodai SIC DIODES 2 695Prieinamumas
Min.: 1
Daugkart.: 1
: 2 500

Infineon Technologies MOSFETs LOW POWER_NEW 4 532Prieinamumas
Min.: 1
Daugkart.: 1
: 3 000

Infineon Technologies 6ED003L02-F2
Infineon Technologies Gate Tvarkyklės 200V 3-Phase,0.375A OCP, Enable & FAULT 2 360Prieinamumas
Min.: 1
Daugkart.: 1
: 3 000

Infineon Technologies MOSFETs LOW POWER_NEW 2 495Prieinamumas
Min.: 1
Daugkart.: 1
: 2 500