Experience the Difference in Power

Infineon is the leader in the power semiconductor market. With more than 20 years of experience and as the innovator of the revolutionary CoolMOS™ super junction MOSFET technology, Infineon continues pioneering in the power management field. Customers can select based on individual design/system requirements from the industry's broadest silicon-based SJ MOSFET portfolio. As one of the few manufacturers mastering all three main power technologies, Infineon complements this assortment with a groundbreaking wide bandgap (WBG) offering. This offering comprises silicon-carbide-based CoolSiC™ MOSFETs, matching diodes, and gallium-nitride-based CoolGaN™ e-mode HEMTs. Solutions are available, ranging from exceptional price performance through unrivaled robustness to best-in-class devices. This enables customers to build more efficient, environmentally friendly, sustainable applications.

Rezultatai: 340
Pasirinkite Vaizdas Dalies Nr. Gam. Aprašymas Duomenų Lapas Prieinamumas Kainodara (EUR) Filtruokite lentelėje pateiktus rezultatus pagal vieneto kainą, remdamiesi kiekiu. Qty. RoHS
Infineon Technologies Gate Tvarkyklės 600V half-brdg,2.8A BSD, OCP, EN & FAULT 1 444Prieinamumas
2 500Tikėtina 2027-01-28
Min.: 1
Daugkart.: 1
: 2 500

Infineon Technologies Gate Tvarkyklės ISOLATED DRIVER 16 422Prieinamumas
Min.: 1
Daugkart.: 1
: 1 000


Infineon Technologies Gate Tvarkyklės 600V half-brdg,2.8A BSD, OCP, EN & FAULT 2 075Prieinamumas
Min.: 1
Daugkart.: 1
: 2 500

Infineon Technologies Gate Tvarkyklės DRIVER-IC 3 602Prieinamumas
Min.: 1
Daugkart.: 1
: 1 000

Infineon Technologies SiC SCHOTTKY diodai SIC DIODES 8 415Prieinamumas
Min.: 1
Daugkart.: 1
: 1 700

Infineon Technologies MOSFETs LOW POWER_NEW 2 793Prieinamumas
Min.: 1
Daugkart.: 1
: 1 000

Infineon Technologies MOSFETs LOW POWER_NEW 5 788Prieinamumas
Min.: 1
Daugkart.: 1

Infineon Technologies MOSFETs LOW POWER_NEW 4 508Prieinamumas
Min.: 1
Daugkart.: 1
: 2 500

Infineon Technologies MOSFETs LOW POWER_NEW 22 746Prieinamumas
Min.: 1
Daugkart.: 1
: 2 500

Infineon Technologies Gate Tvarkyklės 600V half-bridge 0.7A,integrated BSD 381Prieinamumas
Min.: 1
Daugkart.: 1
: 2 500

Infineon Technologies Gate Tvarkyklės 600V half-bridge 0.7A,integrated BSD 2 290Prieinamumas
Min.: 1
Daugkart.: 1
: 2 500


Infineon Technologies Gate Tvarkyklės 600V 3-Phase,0.375A BSD, OCP, EN & FAULT 1 047Prieinamumas
Min.: 1
Daugkart.: 1
: 1 000

Infineon Technologies MOSFETs CONSUMER 3 184Prieinamumas
Min.: 1
Daugkart.: 1
: 2 500

Infineon Technologies MOSFETs LOW POWER_NEW 8 720Prieinamumas
Min.: 1
Daugkart.: 1
: 2 500

Infineon Technologies MOSFETs HIGH POWER_NEW 1 482Prieinamumas
Min.: 1
Daugkart.: 1
: 1 700

Infineon Technologies MOSFETs HIGH POWER_NEW 5 608Prieinamumas
Min.: 1
Daugkart.: 1

Infineon Technologies Gate Tvarkyklės 1200V Isolated 1-CH, 6A, UL, Miller clam 2 604Prieinamumas
Min.: 1
Daugkart.: 1
: 2 500

Infineon Technologies Gate Tvarkyklės 600V half-bridge 0.7A,integrated BSD 1 853Prieinamumas
Min.: 1
Daugkart.: 1
: 2 500


Infineon Technologies Gate Tvarkyklės 600V half-brdg,2.8A BSD, OCP, EN & FAULT 2 302Prieinamumas
Min.: 1
Daugkart.: 1
: 2 500

Infineon Technologies Gate Tvarkyklės 600V 3-Phase,0.375A BSD, OCP, EN & FAULT 1 585Prieinamumas
Min.: 1
Daugkart.: 1
: 1 000

Infineon Technologies MOSFETs HIGH POWER_NEW 2 989Prieinamumas
Min.: 1
Daugkart.: 1
: 3 000

Infineon Technologies MOSFETs HIGH POWER_NEW 1 683Prieinamumas
Min.: 1
Daugkart.: 1


Infineon Technologies MOSFETs HIGH POWER_NEW 388Prieinamumas
Min.: 1
Daugkart.: 1


Infineon Technologies MOSFETs HIGH POWER_NEW 703Prieinamumas
Min.: 1
Daugkart.: 1

Infineon Technologies MOSFETs CONSUMER 4 880Prieinamumas
Min.: 1
Daugkart.: 1