Experience the Difference in Power

Infineon is the leader in the power semiconductor market. With more than 20 years of experience and as the innovator of the revolutionary CoolMOS™ super junction MOSFET technology, Infineon continues pioneering in the power management field. Customers can select based on individual design/system requirements from the industry's broadest silicon-based SJ MOSFET portfolio. As one of the few manufacturers mastering all three main power technologies, Infineon complements this assortment with a groundbreaking wide bandgap (WBG) offering. This offering comprises silicon-carbide-based CoolSiC™ MOSFETs, matching diodes, and gallium-nitride-based CoolGaN™ e-mode HEMTs. Solutions are available, ranging from exceptional price performance through unrivaled robustness to best-in-class devices. This enables customers to build more efficient, environmentally friendly, sustainable applications.

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Infineon Technologies Gate Tvarkyklės ISOLATED DRIVER 15 823Prieinamumas
Min.: 1
Daugkart.: 1
: 1 000

Infineon Technologies Gate Tvarkyklės 600V half-brdg,2.8A BSD, OCP, EN & FAULT 1 423Prieinamumas
2 500Tikėtina 2027-01-28
Min.: 1
Daugkart.: 1
: 2 500


Infineon Technologies Gate Tvarkyklės 600V half-brdg,2.8A BSD, OCP, EN & FAULT 2 075Prieinamumas
Min.: 1
Daugkart.: 1
: 2 500

Infineon Technologies Gate Tvarkyklės 600V half-bridge 0.7A,integrated BSD 381Prieinamumas
Min.: 1
Daugkart.: 1
: 2 500

Infineon Technologies MOSFETs HIGH POWER_NEW 1 735Prieinamumas
Min.: 1
Daugkart.: 1
: 2 000

Infineon Technologies Gate Tvarkyklės DRIVER-IC 3 607Prieinamumas
Min.: 1
Daugkart.: 1
: 1 000

Infineon Technologies MOSFETs LOW POWER_NEW 8 715Prieinamumas
Min.: 1
Daugkart.: 1
: 2 500

Infineon Technologies Gate Tvarkyklės 600V half-bridge 0.7A,integrated BSD 2 290Prieinamumas
Min.: 1
Daugkart.: 1
: 2 500

Infineon Technologies Gate Tvarkyklės 1200V Isolated 1-CH, 9.4A, SEP Output 3 368Prieinamumas
Min.: 1
Daugkart.: 1
: 2 500


Infineon Technologies Gate Tvarkyklės 600V 3-Phase,0.375A BSD, OCP, EN & FAULT 1 047Prieinamumas
Min.: 1
Daugkart.: 1
: 1 000

Infineon Technologies MOSFETs CONSUMER 3 184Prieinamumas
Min.: 1
Daugkart.: 1
: 2 500

Infineon Technologies MOSFETs HIGH POWER_NEW 2 990Prieinamumas
Min.: 1
Daugkart.: 1
: 3 000

Infineon Technologies MOSFETs HIGH POWER_NEW 2 061Prieinamumas
Min.: 1
Daugkart.: 1
: 1 000

Infineon Technologies Gate Tvarkyklės 600V half-bridge 0.7A,integrated BSD 3 159Prieinamumas
Min.: 1
Daugkart.: 1
: 2 500

Infineon Technologies MOSFETs CONSUMER 4 880Prieinamumas
Min.: 1
Daugkart.: 1

Infineon Technologies MOSFETs CONSUMER 19 321Prieinamumas
Min.: 1
Daugkart.: 1
: 2 500

Infineon Technologies MOSFETs LOW POWER_NEW 4 483Prieinamumas
Min.: 1
Daugkart.: 1
: 2 500

Infineon Technologies MOSFETs HIGH POWER_NEW 917Prieinamumas
Min.: 1
Daugkart.: 1
: 3 000

Infineon Technologies MOSFETs HIGH POWER_NEW 772Prieinamumas
Min.: 1
Daugkart.: 1


Infineon Technologies Gate Tvarkyklės 600V 3-Phase,0.375A BSD, OCP, EN & FAULT 752Prieinamumas
Min.: 1
Daugkart.: 1
: 1 000

Infineon Technologies MOSFETs HIGH POWER_NEW 1 462Prieinamumas
Min.: 1
Daugkart.: 1
: 1 700

Infineon Technologies MOSFETs HIGH POWER_NEW 3 361Prieinamumas
Min.: 1
Daugkart.: 1
: 3 000

Infineon Technologies Gate Tvarkyklės 1200V Isolated 1-CH, 6A, UL, Miller clam 2 579Prieinamumas
Min.: 1
Daugkart.: 1
: 2 500

Infineon Technologies Gate Tvarkyklės 600V half-bridge 0.7A,integrated BSD 1 853Prieinamumas
Min.: 1
Daugkart.: 1
: 2 500


Infineon Technologies Gate Tvarkyklės 600V half-brdg,2.8A BSD, OCP, EN & FAULT 2 302Prieinamumas
Min.: 1
Daugkart.: 1
: 2 500