AEC-Q101 SiC Power MOSFETs

ROHM Semiconductor AEC-Q101 SiC Power MOSFETs are ideal for automotive and switch-mode power supplies. The SiC Power MOSFETs can boost switching frequency, decreasing the volumes of capacitors, reactors, and other components required. AEC-Q101 SiC Power MOSFETs offer excellent reductions in size and weight within various drive systems, such as inverters and DC-DC converters in vehicles. Vehicle batteries are trending towards larger capacities with shorter charging times. This demands high power and efficiency on board chargers such as 11kW and 22kW. This leads to increased adoption of SiC MOSFETs. The AEC-Q101 SiC Power MOSFETs meet the needs of electronic vehicles and utilize a trench gate structure. The future design of ROHM's SiC MOSFETs endeavors to improve quality, strengthen its lineup to increase device performance, reduce power consumption, and achieve greater miniaturization.

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Qty. RoHS ECAD modelis Montavimo stilius
Pakuotė / Korpusas
Tranzistoriaus poliškumas
Kanalų skaičius
Vds - nutekėjimo-šaltinio pramušimo įtampa
svar. – nuolatinio išleidimo srovė
RDS On - Drain-Source Varža
Vgs - užtūros-šaltinio įtampa
Vgs th - užtūros-šaltinio slenkstinė įtampa
Qg – vartų krūvis
Minimali darbinė temperatūra
Didžiausia darbinė temperatūra
Pd - skaidos galia
Kanalas Mode
Kvalifikacija
ROHM Semiconductor SiC MOSFET TO263 750V 51A N-CH SIC
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2 010Prieinamumas
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Min.: 1
Daugkart.: 1
: 1 000

SMD/SMT TO-263-7 N-Channel 1 Channel 750 V 51 A 26 mOhms - 4 V, + 21 V 4.8 V 94 nC + 175 C 150 W Enhancement
ROHM Semiconductor SiC MOSFET TO247 750V 56A N-CH SIC
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787Prieinamumas
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Daugkart.: 1

Through Hole TO-247N-3 N-Channel 1 Channel 750 V 56 A 26 mOhms - 4 V, + 21 V 4.8 V 94 nC + 175 C 176 W Enhancement
ROHM Semiconductor SiC MOSFET TO247 1.2KV 26A N-CH SIC
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499Prieinamumas
Min.: 1
Daugkart.: 1

Through Hole TO-247N-3 N-Channel 1 Channel 1.2 kV 26 A 81 mOhms - 4 V, + 21 V 4.8 V 64 nC + 175 C 115 W Enhancement
ROHM Semiconductor SiC MOSFET TO247 1.2KV 26A N-CH SIC
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554Prieinamumas
Min.: 1
Daugkart.: 1

Through Hole TO-247-4 N-Channel 1 Channel 1.2 kV 26 A 81 mOhms - 4 V, + 21 V 4.8 V 64 nC + 175 C 115 W Enhancement
ROHM Semiconductor SiC MOSFET TO247 1.2KV 43A N-CH SIC
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671Prieinamumas
Min.: 1
Daugkart.: 1

Through Hole TO-247-4 N-Channel 1 Channel 1.2 kV 43 A 47 mOhms - 4 V, + 21 V 4.8 V 91 nC + 175 C 176 W Enhancement
ROHM Semiconductor SiC MOSFET TO247 750V 34A N-CH SIC
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810Prieinamumas
Min.: 1
Daugkart.: 1

Through Hole TO-247N-3 N-Channel 1 Channel 750 V 34 A 59 mOhms - 4 V, + 21 V 4.8 V 63 nC + 175 C 115 W Enhancement
ROHM Semiconductor SiC MOSFET TO247 750V 34A N-CH SIC
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750Prieinamumas
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Daugkart.: 1

Through Hole TO-247-4 N-Channel 1 Channel 750 V 34 A 59 mOhms - 4 V, + 21 V 4.8 V 63 nC + 175 C 115 W Enhancement
ROHM Semiconductor SiC MOSFET 1200V 72A 339W SIC 30mOhm TO-247N
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Produkto pastabos
352Prieinamumas
Min.: 1
Daugkart.: 1

Through Hole TO-247-3 N-Channel 1 Channel 1.2 kV 72 A 39 mOhms - 4 V, + 22 V 5.6 V 131 nC - 55 C + 175 C 339 W Enhancement AEC-Q101
ROHM Semiconductor SiC MOSFET TO247 1.2KV 81A N-CH SIC
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236Prieinamumas
Min.: 1
Daugkart.: 1

Through Hole TO-247-4 N-Channel 1 Channel 1.2 kV 81 A 23.4 mOhms - 4 V, + 21 V 4.8 V 170 nC + 175 C 312 W Enhancement
ROHM Semiconductor SiC MOSFET TO247 1.2KV 26A N-CH SIC
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718Prieinamumas
Min.: 1
Daugkart.: 1

Through Hole TO-247N-3 N-Channel 1 Channel 1.2 kV 26 A 81 mOhms - 4 V, + 21 V 4.8 V 64 nC + 175 C 115 W Enhancement
ROHM Semiconductor SiC MOSFET 650V 118A 427W SIC 17mOhm TO-247N
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Produkto pastabos
360Prieinamumas
Min.: 1
Daugkart.: 1

Through Hole TO-247N-3 N-Channel 1 Channel 650 V 118 A 22.1 mOhms - 4 V, + 22 V 5.6 V 172 nC - 55 C + 175 C 427 W Enhancement AEC-Q101
ROHM Semiconductor SiC MOSFET 650V 70A 262W SIC 30mOhm TO-247N
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Produkto pastabos
376Prieinamumas
Min.: 1
Daugkart.: 1

Through Hole TO-247-3 N-Channel 1 Channel 650 V 70 A 39 mOhms - 4 V, + 22 V 5.6 V 104 nC - 55 C + 175 C 262 W Enhancement AEC-Q101
ROHM Semiconductor SiC MOSFET TO247 750V 56A N-CH SIC
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804Prieinamumas
Min.: 1
Daugkart.: 1

Through Hole TO-247-4 N-Channel 1 Channel 750 V 56 A 26 mOhms - 4 V, + 21 V 4.8 V 94 nC + 175 C 176 W Enhancement
ROHM Semiconductor SiC MOSFET TO247 750V 34A N-CH SIC
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321Prieinamumas
Min.: 1
Daugkart.: 1

Through Hole TO-247-4 N-Channel 1 Channel 750 V 34 A 59 mOhms - 4 V, + 21 V 4.8 V 63 nC + 175 C 115 W Enhancement
ROHM Semiconductor SiC MOSFET 1200V 55A 262W SIC 40mOhm TO-247N
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Produkto pastabos
467Prieinamumas
Min.: 1
Daugkart.: 1

Through Hole TO-247-3 N-Channel 1 Channel 1.2 kV 55 A 52 mOhms - 4 V, + 22 V 5.6 V 107 nC - 55 C + 175 C 262 W Enhancement AEC-Q101
ROHM Semiconductor SiC MOSFET 1200V 95A 427W SIC 22mOhm TO-247N
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Produkto pastabos
199Prieinamumas
Min.: 1
Daugkart.: 1

Through Hole TO-247N-3 N-Channel 1 Channel 1.2 kV 95 A 28.6 mOhms - 4 V, + 22 V 5.6 V 178 nC - 55 C + 175 C 427 W Enhancement AEC-Q101
ROHM Semiconductor SiC MOSFET 1200V 24A 134W SIC 105mOhm TO-247N
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Produkto pastabos
1 629Prieinamumas
Min.: 1
Daugkart.: 1

Through Hole TO-247-3 N-Channel 1 Channel 1.2 kV 24 A 137 mOhms - 4 V, + 22 V 5.6 V 51 nC + 175 C 134 W Enhancement AEC-Q101
ROHM Semiconductor SiC MOSFET TO247 1.2KV 43A N-CH SIC
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115Prieinamumas
Min.: 1
Daugkart.: 1

Through Hole TO-247N-3 N-Channel 1 Channel 1.2 kV 43 A 47 mOhms - 4 V, + 21 V 4.8 V 91 nC + 175 C 176 W Enhancement
ROHM Semiconductor SiC MOSFET TO263 750V 31A N-CH SIC
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301Prieinamumas
„MouseReel“ galima
Min.: 1
Daugkart.: 1
: 1 000

SMD/SMT TO-263-7 N-Channel 1 Channel 750 V 31 A 59 mOhms - 4 V, + 21 V 4.8 V 63 nC + 175 C 93 W Enhancement AEC-Q101
ROHM Semiconductor SiC MOSFET 1200V 17A 103W SIC 160mOhm TO-247N
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Produkto pastabos
506Prieinamumas
Min.: 1
Daugkart.: 1

Through Hole TO-247-3 N-Channel 1 Channel 1.2 kV 17 A 208 mOhms - 4 V, + 22 V 5.6 V 42 nC + 175 C 103 W Enhancement AEC-Q101
ROHM Semiconductor SiC MOSFET TO247 1.2KV 26A N-CH SIC
Duomenų Lapas
369Prieinamumas
Min.: 1
Daugkart.: 1

Through Hole TO-247-4 N-Channel 1 Channel 1.2 kV 26 A 81 mOhms - 4 V, + 21 V 4.8 V 64 nC + 175 C 115 W Enhancement
ROHM Semiconductor SiC MOSFET 650V 39A 165W SIC 60mOhm TO-247N
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Produkto pastabos
428Prieinamumas
Min.: 1
Daugkart.: 1

Through Hole TO-247-3 N-Channel 1 Channel 650 V 39 A 78 mOhms - 4 V, + 22 V 5.6 V 58 nC + 175 C 165 W Enhancement AEC-Q101
ROHM Semiconductor SiC MOSFET 650V 30A 134W SIC 80mOhm TO-247N
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Produkto pastabos
376Prieinamumas
Min.: 1
Daugkart.: 1

Through Hole TO-247N-3 N-Channel 1 Channel 650 V 30 A 104 mOhms - 4 V, + 22 V 5.6 V 48 nC + 175 C 134 W Enhancement AEC-Q101
ROHM Semiconductor SiC MOSFET TO263 750V 51A N-CH SIC
Duomenų Lapas
547Prieinamumas
„MouseReel“ galima
Min.: 1
Daugkart.: 1
: 1 000

SMD/SMT TO-263-7 N-Channel 1 Channel 750 V 51 A 26 mOhms - 4 V, + 21 V 4.8 V 94 nC + 175 C 150 W Enhancement
ROHM Semiconductor SiC MOSFET TO263 750V 31A N-CH SIC
Duomenų Lapas
1 996Prieinamumas
Min.: 1
Daugkart.: 1
: 1 000

SMD/SMT TO-263-7 N-Channel 1 Channel 750 V 31 A 59 mOhms - 4 V, + 21 V 4.8 V 63 nC + 175 C 93 W Enhancement