Gen-3 Fast (G3F) SiC MOSFETs

GeneSiC Semiconductor Gen-3 Fast (G3F) SiC MOSFETs are developed using a proprietary trench-assisted planar technology for high-speed performance. The technology enables an extremely low RDS(ON) increase vs. temperature, which results in low power losses across the full operating range. Available in 650V and 1200V variants, these MOSFETs are optimized for faster switching speeds, higher efficiency, and increased power density. GeneSiC G3F SiC MOSFETs offer high-speed, cool-running performance, with up to a +25°C lower case temperature. The thermally enhanced TOLL package for the 650V variant provides space and thermal management advantages. The 1200V models offer the power needed for next-generation EVs and industrial applications. Typical applications include AI data centers, EV roadside superchargers, onboard chargers (OBC), energy storage systems (ESS), and solar power solutions.

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Qty. RoHS ECAD modelis Montavimo stilius
Pakuotė / Korpusas
Tranzistoriaus poliškumas
Kanalų skaičius
Vds - nutekėjimo-šaltinio pramušimo įtampa
svar. – nuolatinio išleidimo srovė
RDS On - Drain-Source Varža
Kanalas Mode
GeneSiC Semiconductor SiC MOSFET 1200V 18mohm TO-263-7 G3F SiC MOSFET 790Prieinamumas
Min.: 1
Daugkart.: 1
Reel: 800

SMD/SMT TO-263-7 N-Channel 1 Channel 1.2 kV 18 mOhms Enhancement
GeneSiC Semiconductor SiC MOSFET 650V 20mohm TO-LL G3F SiC MOSFET 1 933Prieinamumas
Min.: 1
Daugkart.: 1
Reel: 1 200

SMD/SMT TO-LL N-Channel 650 V 20 mOhms Enhancement
GeneSiC Semiconductor SiC MOSFET 1200V 25mohm TO-263-7 G3F SiC MOSFET 1 191Prieinamumas
Min.: 1
Daugkart.: 1
Reel: 800

SMD/SMT TO-263-7 N-Channel 1 Channel 1.2 kV 25 mOhms Enhancement
GeneSiC Semiconductor SiC MOSFET 1200V 34mohm TO-263-7 G3F SiC MOSFET 1 552Prieinamumas
Min.: 1
Daugkart.: 1
Reel: 800

SMD/SMT TO-263-7 N-Channel 1 Channel 1.2 kV 34 mOhms Enhancement
GeneSiC Semiconductor SiC MOSFET 1200V 40mohm TO-247-4 G3F SiC MOSFET 1 642Prieinamumas
Min.: 1
Daugkart.: 1

Through Hole TO-247-4 N-Channel 1 Channel 1.2 kV 61 A 40 mOhms Enhancement
GeneSiC Semiconductor SiC MOSFET 1200V 135mohm TO-263-7 G3F SiC MOSFET 1 565Prieinamumas
Min.: 1
Daugkart.: 1
Reel: 800

SMD/SMT TO-263-7 N-Channel 1 Channel 1.2 kV 135 mOhms Enhancement
GeneSiC Semiconductor SiC MOSFET 1200V 18mohm TO-247-4 G3F SiC MOSFET
Duomenų Lapas
435Prieinamumas
Min.: 1
Daugkart.: 1

Through Hole TO-247-4 N-Channel 1 Channel 1.2 kV 18 mOhms Enhancement
GeneSiC Semiconductor SiC MOSFET 1200V 20mohm TO-263-7 G3F SiC MOSFET 424Prieinamumas
Min.: 1
Daugkart.: 1
Reel: 800

SMD/SMT TO-263-7 N-Channel 1 Channel 1.2 kV 123 A 20 mOhms Enhancement
GeneSiC Semiconductor SiC MOSFET 1200V 20mohm TO-247-4 G3F SiC MOSFET 565Prieinamumas
Min.: 1
Daugkart.: 1

Through Hole TO-247-4 N-Channel 1 Channel 1.2 kV 109 A 20 mOhms Enhancement
GeneSiC Semiconductor SiC MOSFET 650V 20mohm TO-263-7 G3F SiC MOSFET 648Prieinamumas
Min.: 1
Daugkart.: 1
Reel: 800

SMD/SMT TO-263-7 N-Channel 1 Channel 650 V 100 A 20 mOhms Enhancement
GeneSiC Semiconductor SiC MOSFET 650V 20mohm TO-247-4 G3F SiC MOSFET 1 112Prieinamumas
Min.: 1
Daugkart.: 1

Through Hole TO-247-4 N-Channel 1 Channel 650 V 90 A 20 mOhms Enhancement
GeneSiC Semiconductor SiC MOSFET 1200V 25mohm TO-247-4 G3F SiC MOSFET 247Prieinamumas
Min.: 1
Daugkart.: 1

Through Hole TO-247-4 N-Channel 1 Channel 1.2 kV 25 mOhms Enhancement
GeneSiC Semiconductor SiC MOSFET 650V 27mohm TO-263-7 G3F SiC MOSFET 778Prieinamumas
Min.: 1
Daugkart.: 1
Reel: 800

SMD/SMT TO-263-7 N-Channel 1 Channel 650 V 78 A 27 mOhms Enhancement
GeneSiC Semiconductor SiC MOSFET 650V 27mohm TO-247-4 G3F SiC MOSFET 1 129Prieinamumas
Min.: 1
Daugkart.: 1

Through Hole TO-247-4 N-Channel 1 Channel 650 V 70 A 27 mOhms Enhancement
GeneSiC Semiconductor SiC MOSFET 650V 27mohm TO-LL G3F SiC MOSFET 1 200Prieinamumas
Min.: 1
Daugkart.: 1
Reel: 1 200

SMD/SMT TO-LL N-Channel 650 V 27 mOhms Enhancement
GeneSiC Semiconductor SiC MOSFET 1200V 34mohm TO-247-4 G3F SiC MOSFET 461Prieinamumas
Min.: 1
Daugkart.: 1

Through Hole TO-247-4 N-Channel 1 Channel 1.2 kV 34 mOhms Enhancement
GeneSiC Semiconductor SiC MOSFET 1200V 40mohm TO-263-7 G3F SiC MOSFET 786Prieinamumas
Min.: 1
Daugkart.: 1
Reel: 800

SMD/SMT TO-263-7 N-Channel 1 Channel 1.2 kV 68 A 40 mOhms Enhancement
GeneSiC Semiconductor SiC MOSFET 650V 40mohm TO-247-3 G3F SiC MOSFET 1 163Prieinamumas
Min.: 1
Daugkart.: 1

Through Hole TO-247-3 N-Channel 1 Channel 650 V 52 A 40 mOhms Enhancement
GeneSiC Semiconductor SiC MOSFET 650V 40mohm TO-263-7 G3F SiC MOSFET 775Prieinamumas
Min.: 1
Daugkart.: 1
Reel: 800

SMD/SMT TO-263-7 N-Channel 1 Channel 650 V 57 A 40 mOhms Enhancement
GeneSiC Semiconductor SiC MOSFET 650V 40mohm TO-247-4 G3F SiC MOSFET 1 058Prieinamumas
Min.: 1
Daugkart.: 1

Through Hole TO-247-4 N-Channel 1 Channel 650 V 52 A 40 mOhms Enhancement
GeneSiC Semiconductor SiC MOSFET 650V 40mohm TO-LL G3F SiC MOSFET 1 055Prieinamumas
Min.: 1
Daugkart.: 1
Reel: 1 200

SMD/SMT TO-LL N-Channel 650 V 40 mOhms Enhancement
GeneSiC Semiconductor SiC MOSFET 650V 55mohm TO-247-3 G3F SiC MOSFET 1 129Prieinamumas
Min.: 1
Daugkart.: 1

Through Hole TO-247-3 N-Channel 1 Channel 650 V 42 A 55 mOhms Enhancement
GeneSiC Semiconductor SiC MOSFET 650V 55mohm TO-263-7 G3F SiC MOSFET 755Prieinamumas
Min.: 1
Daugkart.: 1
Reel: 800

GeneSiC Semiconductor SiC MOSFET 650V 55mohm TO-247-4 G3F SiC MOSFET 1 056Prieinamumas
Min.: 1
Daugkart.: 1

Through Hole TO-247-4 N-Channel 1 Channel 650 V 42 A 55 mOhms Enhancement
GeneSiC Semiconductor SiC MOSFET 650V 55mohm TO-LL G3F SiC MOSFET 1 200Prieinamumas
Min.: 1
Daugkart.: 1
Reel: 1 200