Power MOSFETs

Diodes Incorporated offers a broad range of Power MOSFETs, enabling designers to select a device optimized for their end application, thus enabling next generation consumer, computer and communication product designs. The Diodes portfolio is ideally suited to meeting the circuit requirements of DC-DC conversion, load switching, motor control, backlighting, battery protection, battery chargers, audio circuits, and automotive applications.

Rezultatai: 1 444
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Diodes Incorporated MOSFETs Mosfet H-Bridge 60/-60V 1.8/-1.4A 32 077Prieinamumas
Min.: 1
Daugkart.: 1
: 2 500

Diodes Incorporated MOSFETs 20V N-Ch Enh Mode 12Vgss 80A .61W 63 887Prieinamumas
Min.: 1
Daugkart.: 1
: 3 000

Diodes Incorporated MOSFETs MOSFET N-CHANNEL P-CHANNEL SOT-563 228 200Prieinamumas
Min.: 1
Daugkart.: 1
Maks.: 3 000
: 3 000

Diodes Incorporated MOSFETs MOSFET P-CHANNEL SOT-523 1 498 701Prieinamumas
Min.: 1
Daugkart.: 1
Maks.: 3 000
: 3 000


Diodes Incorporated MOSFETs 70V P-Ch Enh FET 160Vgs 10V 250mOhm 17 641Prieinamumas
Min.: 1
Daugkart.: 1
Maks.: 1 000
: 1 000


Diodes Incorporated MOSFETs N-Chnl 60V
3 181Prieinamumas
Min.: 1
Daugkart.: 1
Maks.: 150
: 4 000


Diodes Incorporated MOSFETs 12V Enh Mode FET 32 178Prieinamumas
Min.: 1
Daugkart.: 1
Maks.: 550
: 3 000


Diodes Incorporated MOSFETs 30V N-Ch Enh Mode 26.5mOhm 12Vgs 570pF 46 342Prieinamumas
Min.: 1
Daugkart.: 1
Maks.: 950
: 10 000

Diodes Incorporated MOSFETs 40V N-Ch Enh Mode 30mOhm 10V 13.8A 11 043Prieinamumas
Min.: 1
Daugkart.: 1
Maks.: 440
: 2 500

Diodes Incorporated MOSFETs MOSFETBVDSS: 8V-24V Vykdymo Laikas 32 Savaičių
Min.: 1
Daugkart.: 1
: 3 000

Diodes Incorporated MOSFETs MOSFET BVDSS: 8V-24V U-DFN2523-6 T&R 3K 84 270Prieinamumas
Min.: 1
Daugkart.: 1
Maks.: 3 490
: 3 000


Diodes Incorporated MOSFETs MOSFET BVDSS: 8V 24V 231 871Prieinamumas
Min.: 1
Daugkart.: 1
Maks.: 3 000
: 3 000

Diodes Incorporated MOSFETs P-Ch Enh Mode FET 4 230Prieinamumas
Min.: 1
Daugkart.: 1
Maks.: 140
: 2 500

Diodes Incorporated MOSFETs Mosfet H-Bridge 100/-100 1.1/-0.9 22 821Prieinamumas
Min.: 1
Daugkart.: 1
: 2 500


Diodes Incorporated MOSFETs 30V P-Chnl UMOS 17 560Prieinamumas
Min.: 1
Daugkart.: 1
Maks.: 410
: 3 000

Diodes Incorporated MOSFETs 60V P-Channel 6.8A MOSFET 15 741Prieinamumas
Min.: 1
Daugkart.: 1
Maks.: 120
: 2 500

Diodes Incorporated MOSFETs MOSFET BVDSS: 25V-30V 20 000Prieinamumas
Min.: 1
Daugkart.: 1
: 10 000

Diodes Incorporated MOSFETs P-Ch Enh Mode FET 5 636Prieinamumas
Min.: 1
Daugkart.: 1
: 3 000

Diodes Incorporated MOSFETs MOSFET BVDSS: 61V-100V 7 028Prieinamumas
Min.: 1
Daugkart.: 1
: 2 500

Diodes Incorporated MOSFETs N-Ch Enh Mode Fet 60Vdss 20Vgss 60W 10 751Prieinamumas
Min.: 1
Daugkart.: 1
: 2 500


Diodes Incorporated MOSFETs 60V N-Ch FET FET 2A 480mJ Enh 5 049Prieinamumas
Min.: 1
Daugkart.: 1
Maks.: 450
: 1 000

Diodes Incorporated Dvipoliai tranzistoriai – BJT PNP Medium Power
4 950Prieinamumas
Min.: 1
Daugkart.: 1
Maks.: 230
: 4 000


Diodes Incorporated MOSFETs N-Chnl 200V
22 303Prieinamumas
Min.: 1
Daugkart.: 1
Maks.: 400
: 3 000


Diodes Incorporated MOSFETs 60V TRENCH MOSFET 20V VGS P-Channel 3 347Prieinamumas
Min.: 1
Daugkart.: 1
: 2 500


Diodes Incorporated MOSFETs 20V N-Ch 4.6 MOSFET w/low gate drive cap 4 645Prieinamumas
Min.: 1
Daugkart.: 1
: 3 000