Rezultatai: 24
Pasirinkite Vaizdas Dalies Nr. Gam. Aprašymas Duomenų Lapas Prieinamumas Kainodara (EUR) Filtruokite lentelėje pateiktus rezultatus pagal vieneto kainą, remdamiesi kiekiu. Qty. RoHS ECAD modelis Technologijos Montavimo stilius Pakuotė / Korpusas Tranzistoriaus poliškumas Kanalų skaičius Vds - nutekėjimo-šaltinio pramušimo įtampa svar. – nuolatinio išleidimo srovė RDS On - Drain-Source Varža Vgs - užtūros-šaltinio įtampa Vgs th - užtūros-šaltinio slenkstinė įtampa Qg – vartų krūvis Minimali darbinė temperatūra Didžiausia darbinė temperatūra Pd - skaidos galia Kanalas Mode Prekinis pavadinimas Pakavimas

Infineon Technologies MOSFETs MOSFT 200V 49A 40mOhm 156nCAC 25 087Prieinamumas
Min.: 1
Daugkart.: 1

Si Through Hole TO-247-3 N-Channel 1 Channel 200 V 50 A 40 mOhms - 20 V, 20 V 4 V 156 nC - 55 C + 175 C 300 W Enhancement Tube
Infineon Technologies MOSFETs MOSFT 200V 18A 150mOhm 44.7nC 26 934Prieinamumas
Min.: 1
Daugkart.: 1
Reel: 800
Si SMD/SMT D2PAK-3 (TO-263-3) N-Channel 1 Channel 200 V 18 A 150 mOhms - 20 V, 20 V 2 V 44.7 nC - 55 C + 175 C 150 W Enhancement Reel, Cut Tape, MouseReel
Infineon Technologies MOSFETs MOSFT 200V 18A 150mOhm 44.7nC 5 748Prieinamumas
8 975Tikėtina 2026-02-25
Min.: 1
Daugkart.: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 200 V 18 A 150 mOhms - 20 V, 20 V 2 V 44.7 nC - 55 C + 175 C 150 W Enhancement Tube

Infineon Technologies MOSFETs MOSFT 200V 49A 40mOhm 156nCAC 4 761Prieinamumas
Min.: 1
Daugkart.: 1

Si Through Hole TO-247-3 N-Channel 1 Channel 200 V 50 A 40 mOhms - 20 V, 20 V 1.8 V 156 nC - 55 C + 175 C 300 W Enhancement Tube
Infineon Technologies MOSFETs MOSFT 200V 24A 78mOhm 25nC Qg 12 878Prieinamumas
Min.: 1
Daugkart.: 1
Reel: 3 000
Si SMD/SMT DPAK-3 (TO-252-3) N-Channel 1 Channel 200 V 24 A 78 mOhms - 20 V, 20 V 1.8 V 25 nC - 55 C + 175 C 144 W Enhancement Reel, Cut Tape, MouseReel
Infineon Technologies MOSFETs MOSFT 200V 62A 26mOhm 70nC Qg 4 850Prieinamumas
Min.: 1
Daugkart.: 1
Reel: 800
Si SMD/SMT D2PAK-3 (TO-263-3) N-Channel 1 Channel 200 V 62 A 26 mOhms - 30 V, 30 V 5 V 70 nC - 40 C + 175 C 330 W Enhancement Reel, Cut Tape, MouseReel
Infineon Technologies MOSFETs MOSFT 250V 45A 48mOhm 72nC Qg 6 794Prieinamumas
Min.: 1
Daugkart.: 1
Reel: 800
Si SMD/SMT D2PAK-3 (TO-263-3) N-Channel 1 Channel 250 V 45 A 48 mOhms - 30 V, 30 V 5 V 72 nC - 40 C + 175 C 330 W Enhancement Reel, Cut Tape, MouseReel
Infineon Technologies MOSFETs 20V DUAL N-CH LOGIC LEVEL HEXFET 11 660Prieinamumas
Min.: 1
Daugkart.: 1
Reel: 4 000

Si SMD/SMT PQFN 2x2 (DFN2020) N-Channel 2 Channel 20 V 4.5 A 45 mOhms - 12 V, 12 V 1.8 V 3.1 nC - 55 C + 150 C 1.5 W Enhancement StrongIRFET Reel, Cut Tape, MouseReel
Infineon Technologies MOSFETs MOSFT 40V 280A 2.3mOhm 160nC Qg 2 351Prieinamumas
Min.: 1
Daugkart.: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 40 V 280 A 2 mOhms - 20 V, 20 V 2 V 160 nC - 55 C + 175 C 330 W Enhancement Tube
Infineon Technologies MOSFETs MOSFT 200V 0.6A 2200mOhm 3.9nC 12 266Prieinamumas
Min.: 1
Daugkart.: 1
Reel: 3 000

Si SMD/SMT TSOP-6 N-Channel 1 Channel 200 V 600 mA 2.2 Ohms - 30 V, 30 V 2 V 3.9 nC - 55 C + 150 C 2 W Enhancement Reel, Cut Tape, MouseReel
Infineon Technologies MOSFETs MOSFT 200V 44A 54mOhm 60nC 1 356Prieinamumas
Min.: 1
Daugkart.: 1
Reel: 800
Si SMD/SMT D2PAK-3 (TO-263-3) N-Channel 1 Channel 200 V 44 A 54 mOhms - 30 V, 30 V 5 V 60 nC - 55 C + 175 C 320 W Enhancement Reel, Cut Tape, MouseReel
Infineon Technologies MOSFETs MOSFT 200V 24A 78mOhm 25nC Qg 4 369Prieinamumas
2 400Tikėtina 2026-03-04
Min.: 1
Daugkart.: 1
Reel: 800
Si SMD/SMT D2PAK-3 (TO-263-3) N-Channel 1 Channel 200 V 24 A 77.5 mOhms - 20 V, 20 V 5 V 38 nC - 55 C + 175 C 144 W Enhancement Reel, Cut Tape, MouseReel
Infineon Technologies MOSFETs 30V 1 N-CH HEXFET 2.8nC 8 186Prieinamumas
Min.: 1
Daugkart.: 1
Reel: 4 000

Si SMD/SMT PQFN 2x2 (DFN2020) N-Channel 2 Channel 30 V 3.6 A 63 mOhms - 12 V, 12 V 1.8 V 2.8 nC - 55 C + 150 C 1.5 W Enhancement StrongIRFET Reel, Cut Tape, MouseReel
Infineon Technologies MOSFETs MOSFT 150V 0.9A 1200mOhm 4.5nC 8 495Prieinamumas
Min.: 1
Daugkart.: 1
Reel: 3 000

Si SMD/SMT TSOP-6 N-Channel 1 Channel 150 V 900 mA 1.2 Ohms - 30 V, 30 V 5.5 V 4.5 nC - 55 C + 150 C 2 W Enhancement Reel, Cut Tape, MouseReel
Infineon Technologies MOSFETs 30V 8.3A 17.5mOhm 2.5V drive capable 3 324Prieinamumas
3 000Tikėtina 2026-03-04
Min.: 1
Daugkart.: 1
Reel: 3 000

Si SMD/SMT TSOP-6 N-Channel 1 Channel 30 V 8.3 A 17.5 mOhms - 12 V, 12 V 1.8 V 11 nC - 55 C + 150 C 2 W Enhancement HEXFET Reel, Cut Tape, MouseReel

Infineon Technologies MOSFETs MOSFT 200V 30A 75mOhm 82nCAC 699Prieinamumas
3 200Tikėtina 2026-02-25
Min.: 1
Daugkart.: 1

Si Through Hole TO-247-3 N-Channel 1 Channel 200 V 30 A 75 mOhms - 20 V, 20 V 4 V 82 nC - 55 C + 175 C 214 W Enhancement Tube
Infineon Technologies MOSFETs MOSFT 200V 9.5A 300mOhm 23.3nC 1 470Prieinamumas
Min.: 1
Daugkart.: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 200 V 9.3 A 300 mOhms - 20 V, 20 V 2 V 23.3 nC - 55 C + 175 C 82 W Enhancement Tube
Infineon Technologies MOSFETs MOSFT 200V 44A 54mOhm 60nC 112Prieinamumas
2 000Pagal užsakymą
Min.: 1
Daugkart.: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 200 V 44 A 54 mOhms - 30 V, 30 V 1.8 V 91 nC - 55 C + 175 C 3.8 W Enhancement Tube
Infineon Technologies MOSFETs MOSFT 200V 100mOhm 18A 18nC Qg for Aud 2 340Prieinamumas
2 000Tikėtina 2026-02-25
Min.: 1
Daugkart.: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 200 V 18 A 100 mOhms - 20 V, 20 V 1.8 V 18 nC - 55 C + 175 C 100 W Enhancement Tube
Infineon Technologies MOSFETs MOSFT 200V 76A 23.2mOhm 100nC Qg 139Prieinamumas
9 600Pagal užsakymą
Min.: 1
Daugkart.: 1
Reel: 800

Si SMD/SMT D2PAK-3 (TO-263-3) N-Channel 1 Channel 200 V 72 A 22 mOhms - 20 V, 20 V 1.8 V 100 nC - 55 C + 175 C 375 W Enhancement Reel, Cut Tape, MouseReel
Infineon Technologies MOSFETs 20V 1 N-CH HEXFET 11.7mOhms 14nC 709Prieinamumas
4 000Tikėtina 2026-03-19
Min.: 1
Daugkart.: 1
Reel: 4 000

Si SMD/SMT PQFN 2x2 (DFN2020) N-Channel 1 Channel 20 V 22 A 11.7 mOhms - 12 V, 12 V 1.1 V 14 nC - 55 C + 150 C 9.6 W Enhancement StrongIRFET Reel, Cut Tape, MouseReel

Infineon Technologies MOSFETs MOSFT 200V 30A 75mOhm 82nCAC Vykdymo Laikas 18 Savaičių
Min.: 1
Daugkart.: 1

Si Through Hole TO-247-3 N-Channel 1 Channel 200 V 30 A 75 mOhms - 20 V, 20 V 1.8 V 82 nC - 55 C + 175 C 214 W Enhancement Tube

Infineon Technologies MOSFETs MOSFT 200V 94A 23mOhm 180nCAC
2 792Pagal užsakymą
Min.: 1
Daugkart.: 1

Si Through Hole TO-247-3 N-Channel 1 Channel 200 V 94 A 23 mOhms - 30 V, 30 V 1.8 V 180 nC - 55 C + 175 C 580 W Enhancement Tube
Infineon Technologies MOSFETs MOSFT 250V 60A 33mOhm 99nC Qg
5 967Pagal užsakymą
Min.: 1
Daugkart.: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 250 V 60 A 33 mOhms - 30 V, 30 V 1.8 V 99 nC - 55 C + 175 C 390 W Enhancement Tube