M1 EliteSiC MOSFETs

onsemi M1 EliteSiC MOSFETs feature voltage ratings of 1200V and 1700V. The onsemi M1 MOSFETs are designed to meet the requirements of high-power applications that demand reliability and efficiency. The M1 EliteSiC MOSFETs are available in various package options, including D2PAK7, TO-247-3LD, TO-247-4LD, and bare die.

Rezultatai: 27
Pasirinkite Vaizdas Dalies Nr. Gam. Aprašymas Duomenų Lapas Prieinamumas Kainodara (EUR) Filtruokite lentelėje pateiktus rezultatus pagal vieneto kainą, remdamiesi kiekiu. Qty. RoHS ECAD modelis Montavimo stilius Pakuotė / Korpusas Tranzistoriaus poliškumas Kanalų skaičius Vds - nutekėjimo-šaltinio pramušimo įtampa svar. – nuolatinio išleidimo srovė RDS On - Drain-Source Varža Vgs - užtūros-šaltinio įtampa Vgs th - užtūros-šaltinio slenkstinė įtampa Qg – vartų krūvis Minimali darbinė temperatūra Didžiausia darbinė temperatūra Pd - skaidos galia Kanalas Mode Kvalifikacija Prekinis pavadinimas

onsemi SiC MOSFET SIC MOS TO247-3L 160MOHM 1200V 2 549Prieinamumas
Min.: 1
Daugkart.: 1

Through Hole TO-247-3 N-Channel 1 Channel 1.2 kV 17 A 224 mOhms - 15 V, + 25 V 4.3 V 34 nC - 55 C + 175 C 119 W Enhancement EliteSiC

onsemi SiC MOSFET SIC MOS TO247-4L 40MOHM 1200V 1 511Prieinamumas
Min.: 1
Daugkart.: 1

Through Hole TO-247-4 N-Channel 1 Channel 1.2 kV 58 A 56 mOhms - 15 V, + 25 V 4.3 V 106 nC - 55 C + 175 C 319 W Enhancement EliteSiC
onsemi SiC MOSFET SIC MOS D2PAK-7L 40MOHM 1200V 1 014Prieinamumas
Min.: 1
Daugkart.: 1
Reel: 800

SMD/SMT D2PAK-7 N-Channel 1 Channel 1.2 kV 60 A 56 mOhms - 15 V, + 25 V 4.3 V 106 nC - 55 C + 175 C 357 W Enhancement EliteSiC

onsemi SiC MOSFET 20MW 1200V 996Prieinamumas
Min.: 1
Daugkart.: 1

Through Hole TO-247-3 N-Channel 1 Channel 1.2 kV 103 A 28 mOhms - 15 V, + 25 V 4.3 V 203 nC - 55 C + 175 C 535 W Enhancement AEC-Q101 EliteSiC
onsemi SiC MOSFET SIC MOS D2PAK-7L 160MOHM 1200V 2 060Prieinamumas
Min.: 1
Daugkart.: 1
Reel: 800

SMD/SMT D2PAK-7 N-Channel 1 Channel 1.2 kV 19.5 A 224 mOhms - 15 V, + 25 V 4.3 V 33.8 nC - 55 C + 175 C 136 W Enhancement EliteSiC

onsemi SiC MOSFET SIC MOS TO247-4L 1200V 160MOHM INDUSTRY PART 2 176Prieinamumas
Min.: 1
Daugkart.: 1

Through Hole TO-247-4 N-Channel 1 Channel 1.2 kV 17.3 A 224 mOhms - 15 V, + 25 V 4.3 V 34 nC - 55 C + 175 C 111 W Enhancement EliteSiC
onsemi SiC MOSFET SIC MOS D2PAK-7L 80MOHM 1200V 686Prieinamumas
Min.: 1
Daugkart.: 1
Reel: 800

SMD/SMT D2PAK-7 N-Channel 1 Channel 1.2 kV 30 A 110 mOhms - 15 V, + 25 V 4.3 V 56 nC - 55 C + 175 C 179 W Enhancement EliteSiC

onsemi SiC MOSFET SIC MOS TO247-3L 80MOHM 1200V 1 326Prieinamumas
Min.: 1
Daugkart.: 1

Through Hole TO-247-3 N-Channel 1 Channel 1.2 kV 31 A 110 mOhms - 15 V, + 25 V 4.3 V 56 nC - 55 C + 175 C 178 W Enhancement EliteSiC

onsemi SiC MOSFET SIC MOS TO247-4L 20MOHM 1200V 257Prieinamumas
Min.: 1
Daugkart.: 1

Through Hole TO-247-4 N-Channel 1 Channel 1.2 kV 102 A 28 mOhms - 15 V, + 25 V 4.3 V 220 nC - 55 C + 175 C 510 W Enhancement EliteSiC

onsemi SiC MOSFET SIC MOS 80MW 1200 V 80 mOhms 44A 1 182Prieinamumas
Min.: 1
Daugkart.: 1

Through Hole TO-247-3 N-Channel 1 Channel 1.2 kV 31 A 110 mOhms - 15 V, + 25 V 4.3 V 56 nC - 55 C + 175 C 178 W Enhancement AEC-Q101 EliteSiC
onsemi SiC MOSFET SIC MOS D2PAK-7L 80MOHM 1200V 1 973Prieinamumas
Min.: 1
Daugkart.: 1
Reel: 800

SMD/SMT D2PAK-7 N-Channel 1 Channel 1.2 kV 30 A 110 mOhms - 15 V, + 25 V 4.3 V 56 nC - 55 C + 175 C 179 W Enhancement AEC-Q101 EliteSiC

onsemi SiC MOSFET SIC MOS TO247-4L 1200V 160MOHM AUTO PART 181Prieinamumas
Min.: 1
Daugkart.: 1

Through Hole TO-247-4 N-Channel 1 Channel 1.2 kV 17.3 A 224 mOhms - 15 V, + 25 V 4.3 V 34 nC - 55 C + 175 C 111 W Enhancement EliteSiC

onsemi SiC MOSFET SIC MOS TO247-3L 40MOHM 1200V 221Prieinamumas
Min.: 1
Daugkart.: 1

Through Hole TO-247-3 N-Channel 1 Channel 1.2 kV 60 A 56 mOhms - 15 V, + 25 V 4.3 V 106 nC - 55 C + 175 C 348 W Enhancement EliteSiC

onsemi SiC MOSFET SIC MOS TO247-4L 80MOHM 1200V 689Prieinamumas
Min.: 1
Daugkart.: 1

Through Hole TO-247-4 N-Channel 1 Channel 1.2 kV 29 A 80 mOhms - 15 V, + 25 V 4.3 V 56 nC - 55 C + 175 C 170 W Enhancement EliteSiC
onsemi SiC MOSFET SIC MOS D2PAK-7L 20MOHM 1 234Prieinamumas
Min.: 1
Daugkart.: 1
Reel: 800
SMD/SMT D2PAK-7 N-Channel 1 Channel 1.2 kV 98 A 28 mOhms - 15 V, + 25 V 4.3 V 220 nC - 55 C + 175 C 468 W Enhancement AEC-Q101 EliteSiC

onsemi SiC MOSFET SIC MOS TO247-4L 20MOHM 1200V 282Prieinamumas
Min.: 1
Daugkart.: 1

Through Hole TO-247-4 N-Channel 1 Channel 1.2 kV 102 A 28 mOhms - 15 V, + 25 V 4.3 V 220 nC - 55 C + 175 C 510 W Enhancement EliteSiC

onsemi SiC MOSFET SIC MOS TO247-4L 1200V 40MOHM AUTO PART 224Prieinamumas
Min.: 1
Daugkart.: 1

Through Hole TO-247-4 N-Channel 1 Channel 1.2 kV 58 A 56 mOhms - 15 V, + 25 V 4.3 V 106 nC - 55 C + 175 C 319 W Enhancement EliteSiC
onsemi SiC MOSFET Silicon Carbide (SiC) MOSFET - EliteSiC, 28 mohm, 1700 V, M1, D2PAK-7L 155Prieinamumas
Min.: 1
Daugkart.: 1
Reel: 800

SMD/SMT D2PAK-7 N-Channel 1 Channel 1.7 kV 71 A 40 mOhms - 15 V, + 25 V 4.3 V 222 nC - 55 C + 175 C 428 W Enhancement EliteSiC

onsemi SiC MOSFET Silicon Carbide (SiC) MOSFET - EliteSiC, 28 mohm, 1700 V, M1, TO-247-4L 118Prieinamumas
450Tikėtina 2026-02-20
Min.: 1
Daugkart.: 1

Through Hole TO-247-4 N-Channel 1 Channel 1.7 kV 81 A 40 mOhms - 15 V, + 25 V 4.3 V 200 nC - 55 C + 175 C 535 W Enhancement EliteSiC
onsemi SiC MOSFET SIC MOS 20MW 1200V 1 471Prieinamumas
Min.: 1
Daugkart.: 1
Reel: 800

SMD/SMT D2PAK-7 N-Channel 1 Channel 1.2 kV 98 A 28 mOhms - 15 V, + 25 V 4.3 V 220 nC - 55 C + 175 C 468 W Enhancement EliteSiC

onsemi SiC MOSFET 20MW 1200V 603Prieinamumas
Min.: 1
Daugkart.: 1

Through Hole TO-247-3 N-Channel 1 Channel 1.2 kV 103 A 28 mOhms - 15 V, + 25 V 4.3 V 203 nC - 55 C + 175 C 535 W Enhancement EliteSiC
onsemi SiC MOSFET SIC MOS D2PAK-7L 160MOHM 1200V 981Prieinamumas
Min.: 1
Daugkart.: 1
Reel: 800

SMD/SMT D2PAK-7 N-Channel 1 Channel 1.2 kV 19.5 A 224 mOhms - 15 V, + 25 V 4.3 V 33.8 nC - 55 C + 175 C 136 W Enhancement AEC-Q101 EliteSiC

onsemi SiC MOSFET SIC MOS TO247-4L 80MOHM 1200V 253Prieinamumas
Min.: 1
Daugkart.: 1

Through Hole TO-247-4 N-Channel 1 Channel 1.2 kV 29 A 110 mOhms - 15 V, + 25 V 4.3 V 56 nC - 55 C + 175 C 170 W Enhancement EliteSiC

onsemi SiC MOSFET SIC MOS TO247-3L 40MOHM 1200V 635Prieinamumas
Min.: 1
Daugkart.: 1

Through Hole TO-247-3 N-Channel 1 Channel 1.2 kV 60 A 56 mOhms - 15 V, + 25 V 4.3 V 106 nC - 55 C + 175 C 348 W Enhancement EliteSiC

onsemi SiC MOSFET SIC MOS TO247-3L 160MOHM 1200V 990Prieinamumas
Min.: 1
Daugkart.: 1

Through Hole TO-247-3 N-Channel 1 Channel 1.2 kV 17 A 224 mOhms - 15 V, + 25 V 4.3 V 34 nC - 55 C + 175 C 119 W Enhancement EliteSiC