Rezultatai: 27
Pasirinkite Vaizdas Dalies Nr. Gam. Aprašymas Duomenų Lapas Prieinamumas Kainodara (EUR) Filtruokite lentelėje pateiktus rezultatus pagal vieneto kainą, remdamiesi kiekiu. Qty. RoHS ECAD modelis Technologijos Montavimo stilius Pakuotė / Korpusas Tranzistoriaus poliškumas Kanalų skaičius Vds - nutekėjimo-šaltinio pramušimo įtampa svar. – nuolatinio išleidimo srovė RDS On - Drain-Source Varža Vgs - užtūros-šaltinio įtampa Vgs th - užtūros-šaltinio slenkstinė įtampa Qg – vartų krūvis Minimali darbinė temperatūra Didžiausia darbinė temperatūra Pd - skaidos galia Kanalas Mode Prekinis pavadinimas Pakavimas
Infineon Technologies MOSFETs IFX FET > 60-80V 2 013Prieinamumas
Min.: 1
Daugkart.: 1
Reel: 6 000
Si SMD/SMT WHTFN-9 N-Channel 1 Channel 80 V 16 A 5 mOhms - 20 V, 20 V 3.8 V 44 nC - 55 C + 175 C 2.5 W Enhancement Reel, Cut Tape
Infineon Technologies MOSFETs IFX FET >80 - 100V 4 990Prieinamumas
Min.: 1
Daugkart.: 1
Reel: 6 000
Si SMD/SMT WHTFN-9 N-Channel 1 Channel 100 V 13 A 6.5 mOhms - 20 V, 20 V 3.8 V 43 nC - 55 C + 175 C 2.5 W Enhancement Reel, Cut Tape
Infineon Technologies MOSFETs IFX FET >80 - 100V 1 478Prieinamumas
Min.: 1
Daugkart.: 1
Reel: 2 000
Si SMD/SMT N-Channel 1 Channel 100 V 248 A 2.6 mOhms - 20 V, 20 V 3.8 V 89 nC - 55 C + 175 C 313 W Enhancement Reel, Cut Tape
Infineon Technologies MOSFETs IFX FET >80 - 100V 5 096Prieinamumas
Min.: 1
Daugkart.: 1
Reel: 5 000

Si SMD/SMT N-Channel 1 Channel 100 V 85 A 6.5 mOhms - 20 V, 20 V 3.8 V 34 nC - 55 C + 175 C 100 W Enhancement Reel, Cut Tape
Infineon Technologies MOSFETs IFX FET > 60-80V 3 266Prieinamumas
Min.: 1
Daugkart.: 1
Reel: 5 000

Si SMD/SMT N-Channel 1 Channel 80 V 101 A 5 mOhms - 20 V, 20 V 3.8 V 35 nC - 55 C + 175 C 100 W Enhancement Reel, Cut Tape, MouseReel
Infineon Technologies MOSFETs IFX FET > 60-80V 477Prieinamumas
Min.: 1
Daugkart.: 1
Reel: 2 000
Si SMD/SMT N-Channel 1 Channel 80 V 290 A 1.9 Ohms - 20 V, 20 V 3.8 V 94 nC - 55 C + 175 C 313 W Enhancement Reel, Cut Tape
Infineon Technologies MOSFETs IFX FET >80 - 100V 2 977Prieinamumas
Min.: 1
Daugkart.: 1
Reel: 3 000

Si SMD/SMT TFN-10 N-Channel 2 Channel 100 V 139 A 4 mOhms - 20 V, 20 V 3.8 V 52 nC - 55 C + 175 C 167 W Enhancement Reel, Cut Tape, MouseReel
Infineon Technologies MOSFETs IFX FET > 60-80V 3 819Prieinamumas
Min.: 1
Daugkart.: 1
Reel: 5 000

Si SMD/SMT TSON-8 N-Channel 1 Channel 80 V 99 A 4.6 mOhms - 20 V, 20 V 2.3 V 38 nC - 55 C + 175 C 100 W Enhancement Reel, Cut Tape
Infineon Technologies MOSFETs IFX FET > 60-80V 4 179Prieinamumas
Min.: 1
Daugkart.: 1
Reel: 1 800
Si SMD/SMT HDSOP-16 N-Channel 1 Channel 80 V 408 A 1.1 mOhms - 20 V, 20 V 3.8 V 223 nC - 55 C + 175 C 3.8 W Enhancement Reel, Cut Tape
Infineon Technologies MOSFETs IFX FET >80 - 100V 2 852Prieinamumas
3 600Tikėtina 2026-03-19
Min.: 1
Daugkart.: 1
Reel: 1 800

Si SMD/SMT HDSOP-16 N-Channel 1 Channel 100 V 365 A 1.4 mOhms - 20 V, 20 V 3.8 V 211 nC - 55 C + 175 C 3.8 W Enhancement Reel, Cut Tape, MouseReel
Infineon Technologies MOSFETs IFX FET > 60-80V 3 887Prieinamumas
Min.: 1
Daugkart.: 1
Reel: 5 000

Si SMD/SMT TTFN-9 N-Channel 1 Channel 80 V 323 A 1.57 mOhms - 20 V, 20 V 3.8 V 106 nC - 55 C + 175 C 333 W Enhancement OptiMOS Reel, Cut Tape
Infineon Technologies MOSFETs IFX FET >80 - 100V 4 353Prieinamumas
Min.: 1
Daugkart.: 1
Reel: 5 000

Si SMD/SMT TTFN-9 N-Channel 1 Channel 100 V 273 A 2.05 mOhms - 20 V, 20 V 3.8 V 107 nC - 55 C + 175 C 333 W Enhancement OptiMOS Reel, Cut Tape
Infineon Technologies MOSFETs IFX FET > 60-80V 3 298Prieinamumas
Min.: 1
Daugkart.: 1
Reel: 5 000

Si SMD/SMT TTFN-9 N-Channel 1 Channel 80 V 99 A 4.6 mOhms - 20 V, 20 V 2.3 V 38 nC - 55 C + 175 C 100 W Enhancement Reel, Cut Tape
Infineon Technologies MOSFETs IFX FET > 60-80V 2 664Prieinamumas
Min.: 1
Daugkart.: 1
Reel: 6 000

Si SMD/SMT WHSON-8 N-Channel 1 Channel 80 V 99 A - 20 V, 20 V 2.3 V - 55 C + 175 C Enhancement OptiMOS Reel, Cut Tape
Infineon Technologies MOSFETs IFX FET > 60-80V 3 300Prieinamumas
Min.: 1
Daugkart.: 1
Reel: 6 000
Si SMD/SMT WHSON-8 N-Channel 1 Channel 80 V 16 A 5 mOhms - 20 V, 20 V 3.8 V 44 nC - 55 C + 175 C 2.5 W Enhancement Reel, Cut Tape
Infineon Technologies MOSFETs IFX FET > 60-80V 3 835Prieinamumas
Min.: 1
Daugkart.: 1
Reel: 5 000

Si SMD/SMT TDSON-8 N-Channel 1 Channel 80 V 198 A 2.55 mOhms - 20 V, 20 V 3.9 V - 55 C + 175 C 217 W Enhancement Reel, Cut Tape, MouseReel
Infineon Technologies MOSFETs OptiMOS 5 power MOSFET 100 V in a TO-220 package 209Prieinamumas
Min.: 1
Daugkart.: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 100 V 120 A 2.3 mOhms - 20 V, 20 V 3.8 V 168 nC - 55 C + 175 C 375 W Enhancement OptiMOS Tube
Infineon Technologies MOSFETs IFX FET >80 - 100V 500Prieinamumas
Min.: 1
Daugkart.: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 100 V 44 A 8.3 mOhms - 20 V, 20 V 3.8 V 30 nC - 55 C + 175 C 36 W Enhancement Tube
Infineon Technologies MOSFETs IFX FET > 60-80V 996Prieinamumas
Min.: 1
Daugkart.: 1
Reel: 2 000

Si SMD/SMT N-Channel 1 Channel 80 V 333 A 1.3 mOhms - 20 V, 20 V 4.1 V 158 nC - 55 C + 150 C 278 W Enhancement Reel, Cut Tape, MouseReel
Infineon Technologies IPP034N08N5XKSA1
Infineon Technologies MOSFETs IFX FET > 60-80V 141Prieinamumas
Min.: 1
Daugkart.: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 80 V 120 A 3.4 mOhms - 20 V, 20 V 3.8 V 69 nC - 55 C + 175 C 167 W Enhancement Tube
Infineon Technologies MOSFETs IFX FET >80 - 100V 158Prieinamumas
10 000Tikėtina 2026-10-15
Min.: 1
Daugkart.: 1
Reel: 5 000

Si SMD/SMT N-Channel 1 Channel 100 V 85 A 6.5 mOhms - 20 V, 20 V 3.8 V 34 nC - 55 C + 175 C 100 W Enhancement Reel, Cut Tape
Infineon Technologies MOSFETs IFX FET >80 - 100V 104Prieinamumas
6 000Tikėtina 2026-09-10
Min.: 1
Daugkart.: 1
Reel: 6 000
Si SMD/SMT WHSON-8 N-Channel 1 Channel 100 V 13 A 6.5 mOhms - 20 V, 20 V 3.8 V 43 nC - 55 C + 175 C 2.5 W Enhancement Reel, Cut Tape
Infineon Technologies MOSFETs IFX FET > 60-80V 102Prieinamumas
Min.: 1
Daugkart.: 1
Reel: 5 000

Si SMD/SMT N-Channel 1 Channel 80 V 101 A 5 mOhms - 20 V, 20 V 3.8 V 35 nC - 55 C + 175 C 100 W Enhancement Reel, Cut Tape, MouseReel
Infineon Technologies MOSFETs IFX FET > 60-80V
12 000Pagal užsakymą
Min.: 1
Daugkart.: 1
Reel: 6 000

Si SMD/SMT WHSON-8 N-Channel 1 Channel 80 V 99 A - 20 V, 20 V 2.3 V - 55 C + 175 C Enhancement OptiMOS Reel, Cut Tape, MouseReel
Infineon Technologies IPP027N08N5XKSA1
Infineon Technologies MOSFETs IFX FET > 60-80V Ne Sandėlyje Esančių Prekių Pristatymo Laikas 8 Savaičių
Min.: 500
Daugkart.: 500

Si Through Hole TO-220-3 N-Channel 1 Channel 80 V 120 A 2.7 mOhms - 20 V, 20 V 3.8 V 99 nC - 55 C + 175 C 214 W Enhancement Tube