Vishay / Siliconix Si3493DDV 20V P-Channel TrenchFET® Gen III MOSFET
Vishay / Siliconix Si3493DDV 20V P-Channel TrenchFET® Gen III MOSFET delivers low on-resistance of 0.05Ω (maximum) at -1.8VGS. This power MOSFET is available in a single-configuration TSOP-6 package size. Vishay / Siliconix Si3493DDV 20V P-Channel TrenchFET Gen III MOSFET operates in a -55°C to +150°C temperature range. The device provides an on-resistance rating that accommodates a wide range of applications, including load switches, battery switches, PA switches, and battery management in mobile devices.
Features
- TrenchFET Gen III p-channel power MOSFET
- RDS(on) rating at -1.8V VGS
- 100% Rg and UIS tested
- -55°C to +150°C operating temperature range
Applications
- Battery management in mobile devices
- Battery switches
- Load switches
- PA switches
Specifications
Circuit Diagram
Related MOSFETs
Vishay / Siliconix TrenchFET Gen III P-Channel Power MOSFETs
Features low on-resistance, low-voltage drops, increased efficiency, and battery time.
Paskelbta: 2017-06-09
| Atnaujinta: 2022-06-30