ROHM Semiconductor RBRxxBGE Schottky Barrier Diodes
ROHM Semiconductor RBRxxBGE Schottky Barrier Diodes feature a silicon epitaxial planar structure and 30V, 40V, or 60V repetitive peak reverse voltage. The RBRxxBGE Schottky Barrier Diodes offer high reliability, a low VF, and cathode common dual type. The ROHM RBRxxBGE Diodes are designed for switching power supply applications.
Features
- High reliability
- Power mold type
- Cathode common dual type
- Low VF
Rohm's Power Diode Family
Package Style
Additional Resources
Associated Products
ROHM Semiconductor Schottky Barrier Diodes
High-reliability, low-loss devices available in a variety of packages.
Paskelbta: 2021-02-04
| Atnaujinta: 2022-03-11