Qorvo QPD0007 GaN RF Transistors
Qorvo QPD0007 GaN RF Transistors are single-path discrete GaN on SiC high-electron-mobility transistors (HEMTs) in a DFN package. These Qorvo RF transistors are single-stage, unmatched transistors capable of delivering a P3dB output power of 20W at +48V operation. The QPD0007 transistors operate in the DC to 5GHz frequency range and offer 73% drain efficiency at 3.5GHz. Typical applications include WCDMA/LTE, macrocell base station, microcell base station, general-purpose, small cell, active antenna, and 5G massive MIMO.
Features
- DC to 5GHz operating frequency range
- 48V operating drain voltage
- 20W maximum output power (P3dB) at 3.6GHz
- 73% maximum drain efficiency at 3.5GHz
- 19dB efficiency-tuned back off gain at 3.5GHz
- 4.5mm x 4mm DFN package
Applications
- WCDMA/LTE
- Macrocell base stations
- Microcell base stations
- Small cell
- Active antennas
- 5G massive MIMO
- General-purpose applications
Evaluation Board
Qorvo QPD0007 Evaluation Board
Designed to evaluate the features and functionalities of single-stage QPD0007 GaN RF transistors.
Related Transistors
Qorvo QPD0005 GaN RF Transistors
Single-stage, unmatched transistors capable of delivering PSAT of 8.7W at 48V operation.
Paskelbta: 2020-11-23
| Atnaujinta: 2024-08-27