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Vishay / Siliconix SISH892BDN N-Channel 100V MOSFET

Vishay / Siliconix SISH892BDN N-Channel 100V MOSFET is a TrenchFET® Gen IV power MOSFET featuring 100% Rg and UIS tested. The SISH892BDN MOSFET offers a 100V VDS, 20A ID, and 8nC Qg. The Vishay / Siliconix SISH892BDN MOSFET is available in a PowerPAK® 1212-8SH package and has an operating junction and storage temperature range of -55°C to +150°C.

The SISH892BDN N-Channel 100V MOSFET is ideal for high power density DC/DC, synchronous rectification, and LED lighting applications.

Features

  • TrenchFET® Gen IV power MOSFET
  • 100% Rg and UIS tested

Applications

  • High power density DC/DC
  • Synchronous rectification
  • LED Lighting

Associated Products

Vishay / Siliconix TrenchFET® Gen IV MOSFETs

Offers an industry-low on-resistance down to 1.35mΩ at 4.5V.

Learn Moreabout Vishay / Siliconix TrenchFET® Gen IV MOSFETs View Productsrelated to Vishay / Siliconix TrenchFET® Gen IV MOSFETs

Package Style

Vishay / Siliconix SISH892BDN N-Channel 100V MOSFET
Paskelbta: 2021-04-12 | Atnaujinta: 2022-03-11