Toshiba 150V N-Channel U-MOS X-H MOSFETs
Toshiba 150V N-Channel U-MOS X-H MOSFETs are advanced power semiconductor devices engineered for high-efficiency switching applications, particularly in demanding environments like telecommunication base stations and data center servers. These MOSFETs are part of Toshiba’s U-MOS X-H series, which leverages cutting-edge trench process technology to deliver superior performance in compact and cost-sensitive power supply designs. The U-MOS X-H series achieves significantly reduced on-resistance, minimizing conduction losses and improving overall power efficiency. An enhanced output charge (Qoss) and reverse recovery charge (Qrr) contribute to lower switching losses, making these MOSFETs ideal for high-frequency applications. Rated for operation at channel temperatures of up to +175°C, the Toshiba 150V N-Channel U-MOS X-H MOSFETs ensure reliability in thermally challenging environments.
Features
- Improved trade-off between on-resistance and charge characteristics by device structure optimization and fine process technology
- Reduced reverse recovery loss and spike voltage by built-in high-speed diode (HSD) with lifetime control technology
- High temperature operation capability by high channel temperature rating (Tch = +175°C)
- Low leakage current and drain-source on-resistance
- Enhancement mode
- Available useful contents that help efficient design, such as application notes, reference designs, and so on
Applications
- High-efficiency DC-DC converters
- Switching voltage regulators
- Motor drivers
- Telecommunication base stations
- Datacenter servers
Specifications
- 150V drain-source voltage
- ±20V gate-source voltage
- 18A to 120A drain current range
- 46W to 300W power dissipation range
- 800pF to 7820pF input capacitance range
- 11nC to 96nC gate charge range
On-Resistance
Output Charge
Reverse Recovery Charge
