EPCOS / TDK EP9 IGBT Gate Drive Transformers
EPCOS/TDK EP9 IGBT Gate Drive Transformers are compact devices built on an MnZn ferrite core with an SMD L-pin construction.These transformers offer excellent insulation, minimal coupling capacitance, and high thermal resilience. The EP9 IGBT gate drive transformers support half-bridge or push-pull topologies. These transformers feature a 2pF low coupling capacity and ≥5mm clearance distance (cumulative and core floating). The EP9 IGBT gate drive transformers operate within the 100kHz to 400kHz frequency range and -40°C to 150°C temperature range. These transformers are RoHS compliant and AEC-Q200 qualified. The EP9 IGBT gate drive transformers are designed specifically for IGBT and FET gate driver circuits. Typical applications include isolated DC-DC converters, isolated AC-DC converters, and gate driver circuits.
Features
- 2pF low coupling capacity
- 2500VAC high test voltage (50Hz, 1 second; VAC)
- 100kHz to 400kHz operating frequency range
- B82804E0164A200:
- Half-bridge topology
- 1:2.8:1.53 turns ratio
- B82804E0473A200:
- Push-pull topology
- 1:2.9:1 turns ratio
- ≥5mm creepage and clearance distance (cumulative and core floating)
- -40°C to 150°C operating temperature range
- 13mm x 11mm footprint
- Available in tape-and-reel package
- RoHS compliant
- AEC-Q200 qualified Rev.E
Applications
- IGBT/MOSFET gate drive transformers for inverter systems
- Push-pull converters
- E-mobility and industrial requirements with 500V system voltage
- Auxiliary transformer for DC-DC converters
- DC-DC power supplies
Sample Kit
The B82804X0001 sample kit is an EP9 L-pin kit for an IGBT gate drive transformer. This kit operates from -40°C to 150°C temperature range and is AEC-Q200 qualified. The B82804X0001 sample kit is used in general automotive applications.
Mechanical Diagram
Additional Resource
Paskelbta: 2024-12-10
| Atnaujinta: 2025-05-08