Taiwan Semiconductor TESDA1L2B17P1Q1 ESD Protection Diode

Taiwan Semiconductor TESDA1L2B17P1Q1 ESD Protection Diode is a bidirectional ESD‑rated clamping device designed to safeguard power interfaces, control lines, or low‑speed data lines within electronic systems. Engineered to protect sensitive components connected to power and control paths, the Taiwan Semiconductor TESDA1L2B17P1Q1 helps prevent damage from electrostatic discharge (ESD) and lightning‑induced overvoltage events.

Housed in an ultra‑small DFN1006-2LW surface‑mount package, this device provides robust protection for two automotive in‑vehicle network bus lines against ESD and other transient disturbances. It supports ESD protection up to ±30kV (contact and air discharge) in compliance with IEC61000‑4‑2 and can withstand peak pulse currents up to 3A (8/20μs) according to IEC61000‑4‑5.

Features

  • AEC-Q101 qualified
  • Wettable flank
  • Provides ESD protection for each channel to IEC
    • 61000-4-2 (ESD) ±30kV (air), ±30kV (contact) IEC
    • 61000-4-5 (Lightning) 3A (8/20us) mininum
  • Suitable for 15V/24V and below, operating voltage applications
  • Ultra-small DFN1006-2LW package saves board space
  • Protects one I/O line or one power line
  • Moisture Sensitivity Level (MSL) 1 per J-STD-020
  • Lead-free, Halogen-free, and RoHS-compliant

Applications

  • ESD protection for in-vehicle network lines in automotive environments
  • LIN-bus protection
  • Automotive

Specifications

  • 15V or 24V reverse working voltage options
  • Reverse breakdown voltage ranges (IR = 1mA, TJ = +25°C)
    • 17.1V to 20.3V for 15V reverse working voltage
    • 25.5V to 35.5V for 24V reverse working voltage
  • 50nA maximum reverse leakage current (TJ = +25°C)
  • 25V to 70V maximum clamping voltage range
  • 17pF maximum junction capacitance, 14.3pF typical
  • Maximum differential resistances
    • 225Ω at IR = 1mA (15V)
    • 300Ω at IR = 1mA (24V)
  • 210W maximum peak pulse power
  • 3A maximum peak pulse current
  • -55°C to +150°C operating junction temperature range
Application Circuit Diagram - Taiwan Semiconductor TESDA1L2B17P1Q1 ESD Protection Diode

ESD Protection

Block Diagram - Taiwan Semiconductor TESDA1L2B17P1Q1 ESD Protection Diode
Paskelbta: 2026-02-18 | Atnaujinta: 2026-02-19