Grįžti į Swissbit

Swissbit C-350 Industrial CompactFlash™ Cards

Swissbit C-350 Industrial CompactFlash™ Cards feature a highly integrated memory controller and equal wear leveling of static and dynamic data. The highly integrated memory controller is compatible with true IDE mode and supports up to UDMA4 / MDMA4 / PIO6 mode and PC card ATA interface. These memory cards offer S.M.A.R.T. support, controlled "locked" BOM, and life cycle management, and are hot-swappable in PCMCIA modes. Additional features include SLC NAND flash with long-term availability, sequential read up to 19.8MBytes/s, and random read IOPS up to 2,900. Swissbit C-350 cards offer sequential write up to 11.4MBytes/s and random write IOPS up to 20. The C-350 cards are available in 32MBytes, 64MBytes, 128MBytes, and 256MBytes capacities in a 36.4mm x 42.8mm x 3.3mm CompactFlash card type I form factor.

Features

  • SLC NAND flash with long-term availability
  • Highly-integrated memory controller
    • Up to UDMA4 / MDMA4 / PIO6 mode supported
    • PC Card ATA Interface supported
    • True IDE mode compatible
    • Fix drive (IDE mode) and removable drive (PCMCIA mode) as default in same card
  • Hot-swappable in PCMCIA modes
  • Power-saving mode (with automatic wake-up)
  • S.M.A.R.T. support
  • Equal wear leveling of static and dynamic data
  • Controlled "locked" BOM and life cycle management
  • Swissbit Life Time Monitoring (SBLTM) tool and SDK for SBLTM (on request)

Specifications

  • 32MBytes, 64MBytes, 128MBytes, and 256MBytes capacities
  • 36.4mm x 42.8mm x 3.3mm CompactFlash card type I form factor
  • CompactFlash™ specification 3.0 (4.1 compatible) compliance
  • CFA feature set, HPA, power management, and S.M.A.R.T command sets
  • Read performance
    • Sequential read up to 19.8MBytes/s and random read IOPS up to 2,900
  • Write performance
    • Sequential write up to 11.4MBytes/s and random write IOPS up to 20
  • 0°C to +70°C commercial operating temperature range
  • -40°C to +85°C industrial operating temperature range
  • 3.3V ± 10% / 5V ± 10% operating voltage
  • Endurance in TeraBytes written (TBW)
    • Up to 25TBW sequential WL
    • Up to 0.76TBW enterprise WL
  • 1,500g / 20g shock / vibration
  • High-performance 32-bit processor with integrated, parallel flash interface engines
    • Single-level cell (SLC) NAND flash
    • Hardware RS-code ECC (4Bytes/528Bytes correction)
  • High reliability:
    • >3Mhrs at +25°C mean time between failure (MTBF)
    • <1 non-recoverable error per 1014 bits read data reliability
Paskelbta: 2020-12-09 | Atnaujinta: 2024-08-12