STMicroelectronics LET RF Power Transistors
STMicroelectronics LET RF Power Transistors are a common source N-Channel enhancement-mode lateral field-effect RF power transistor. These transistors are based on the new advanced STH5P LDMOS technology and are targeted for operation up to 2.0GHz. STMicroelectronics LET RF Power Transistors are specifically designed for 28V (cellular base stations) and 32/36V (avionics) applications. These devices have a significant improvement in terms of RF performance (+3dB gain, +15% efficiency), ruggedness, and reliability makes this new product line ideal in applications such as private mobile radio, government communications, avionics systems, and L-band satellite uplink equipment.
Features
- > 80V breakdown voltage
- Up to 36V operating voltage
- Up to 2GHz operating frequency
- > 150W @ 32V output power
- 20:1 all phases load mismatch
- Enhanced efficiency, gain and power saturation
- Excellent thermal behavior
- High ruggedness
- Improved reliability
Applications
- Government wideband communications
- Avionics and radar systems
- Cellular repeaters
- Base stations
- L-band satellite communications
View Results ( 2 ) Page
| Dalies Numeris | Duomenų Lapas | Aprašymas | Išvesties Galia |
|---|---|---|---|
| RF3L05150CB4 |  |
RD MOSFET tranzistoriai 150 W, 28/32 V, HF to 1 GHz RF power LDMOS transistor | 150 W |
| ST9045C | |
RD MOSFET tranzistoriai RF Power LDMOS transistor HF up to 1.5 GHz |
Paskelbta: 2012-02-15
| Atnaujinta: 2022-06-02