Grįžti į ROHM Semiconductor

ROHM Semiconductor Super Fast Recovery Diodes

ROHM Semiconductor Super Fast Recovery Diodes are designed to improve the efficiency of switching power supplies. These diodes feature silicon epitaxial planar, low forward voltage, and low switching loss. These RFNxLBxS are ideal for general rectification applications.

Features

  • Repetitive peak reverse voltage:
    • 400V (RFN2LB4S and RFN3LB4S)
    • 600V (RFN2LB6S and RFN3LB6S)
  • Average rectified forward current:
    • 2A (RFN2LB4S and RFN2LB6S)
    • 3A (RFN3LB4S and RFN3LB6S)
  • Peak forward surge current:
    • 35A (RFN2LB6S and RFN3LB6S)
    • 55A (RFN2LB4S and RFN3LB4S)
  • Small power mold type
  • Low forward voltage
  • Low switching loss
  • Ideal for general rectification

Mechanical Diagram

Mechanical Drawing - ROHM Semiconductor Super Fast Recovery Diodes

Associated Diode

ROHM Semiconductor RF302LB2S Super Fast Recovery Diode

Offers low forward voltage and switching losses in a DO-214AA package.

Learn Moreabout ROHM Semiconductor RF302LB2S Super Fast Recovery Diode View Productsrelated to ROHM Semiconductor RF302LB2S Super Fast Recovery Diode
View Results ( 5 ) Page
Dalies Numeris Duomenų Lapas Jei – tiesioginė srovė Didžiausia viršįtampio srovė Vf - tiesioginė įtampa Vr - atvirkštinė įtampa Atkūrimo Laikas
RF302LB2STBR1 RF302LB2STBR1 Duomenų Lapas 3 A 80 A 840 mV 16 ns
RFN2LB4STBR1 RFN2LB4STBR1 Duomenų Lapas 2 A 55 A 930 mV 400 V 22 ns
RFN2LB6STBR1 RFN2LB6STBR1 Duomenų Lapas 2 A 35 A 1.3 V 600 V 16 ns
RFN3LB4STBR1 RFN3LB4STBR1 Duomenų Lapas 3 A 55 A 980 mV 400 V 22 ns
RFN3LB6STBR1 RFN3LB6STBR1 Duomenų Lapas 3 A 35 A 1.4 V 600 V 16 ns
Paskelbta: 2025-06-12 | Atnaujinta: 2025-07-14