Grįžti į ROHM Semiconductor

ROHM Semiconductor RF7x Automotive Power MOSFETs

ROHM Semiconductor RF7x Automotive Power MOSFETs (comprising the RF7G, RF7L, and RF7P variants) are high-performance Silicon Carbide (SiC) devices designed for demanding power applications. These MOSFETs feature a 1200V voltage rating, making the ROHM RF7x MOSFETs ideal for high-voltage environments such as automotive inverters, onboard chargers, and industrial power systems. The RF7G series offers balanced characteristics suitable for general-purpose use, while the RF7L series is optimized for low conduction losses, enhancing efficiency in continuous operation scenarios like battery management and energy storage. The RF7P series excels in high-speed switching, making it well-suited for applications requiring rapid response, such as telecom equipment and LED lighting. Across all variants, key features include low ON-resistance, fast switching performance, high reliability, and compact packaging, enabling efficient and robust power conversion in both automotive and industrial sectors.

Features

  • 1200V voltage rating
  • SiC MOSFET technology
  • Low ON-resistance [RDS(on)]
  • Fast switching performance
  • Enhancement mode
  • N- and P-channel options
  • High reliability
  • Compact surface-mount DFN2020-8 package
  • Optimized gate charge

Applications

  • General-purpose types (RF7Gx)
    • Automotive inverters
    • Onboard chargers (OBC)
    • DC/DC converters
    • Industrial power supplies
    • Motor drives
    • Renewable energy systems
    • UPS systems
    • EV charging stations
  • High-speed switching type (RF7Px)
    • Consumer electronics
    • LED lighting
    • Low-voltage power supplies
    • Portable devices
    • Internet of Things (IoT) applications
    • Telecom equipment
  • Low-loss type (RF7Lx)
    • Automotive electronics
    • Battery management systems
    • Powertrain control
    • Industrial automation
    • Robotics
    • Smart grid infrastructure
    • Energy storage systems

Specifications

  • 40V, 60V, and 100V drain-source breakdown voltage options
  • 12A continuous drain current
  • 18.5mΩ to 119mΩ drain-source resistance range
  • 2.5V or 4V gate-source threshold voltage options
  • 23W power dissipation
  • 6.8nC to 15.7nC gate charge range
  • 2.7S to 4S minimum forward transconductance range
  • 6ns to 13ns rise time range
  • 7ns to 9ns typical turn-on delay time range
  • 4.7ns to 18ns fall time range
  • 16ns to 52ns typical turn-off delay time range
  • -55°C to +150°C operating temperature range

Inner Circuits

Application Circuit Diagram - ROHM Semiconductor RF7x Automotive Power MOSFETs
Paskelbta: 2025-10-10 | Atnaujinta: 2025-10-17