ROHM Semiconductor RBR40NS Schottky Barrier Diodes
ROHM Semiconductor RBR40NS Schottky Barrier Diodes are designed for use in switching power supplies and feature 100A peak forward surge current. These diodes offer high reliability, low forward voltage, and 40A average rectified forward current. The RBR40NS Schottky barrier diodes are available in three variants with 30V, 40V, and 60V repetitive peak reverse voltages. These diodes are designed using silicon epitaxial planar type construction and come in a TO-263AB (D2PAK) package. The RBR40NS Schottky barrier diodes are RoHS compliant and operate within the -55°C to 150°C temperature range.
Features
- High reliability
- Power mold type
- Cathode common dual type
- Low forward voltage (VF)
- Silicon epitaxial planar structure
- 100A peak forward surge current (IFSM)
- 40A average rectified forward current (ID)
- RoHS compliant
- 150°C junction temperature
- -55°C to 150°C storage temperature range
Related Products
ROHM Semiconductor RBRxx30ATL Low VF Type Schottky Barrier Diodes
Cathode common dual type low VF diodes with 30V reverse direct voltage in D2PAK or DPAK packages.
ROHM Semiconductor RBRxx60ATL Low VF Type Schottky Barrier Diodes
Cathode common dual type low VF diodes with 60V reverse direct voltage in D²PAK or DPAK packages.
View Results ( 3 ) Page
| Dalies Numeris | Duomenų Lapas | Jei – tiesioginė srovė | Ifsm – tiesioginė viršįtampio srovė | IR - Atvirkštinė Srovė | Vf - tiesioginė įtampa | Vr - atvirkštinė įtampa | Vrrm - pasikartojanti atvirkštinė įtampa | Didžiausia darbinė temperatūra |
|---|---|---|---|---|---|---|---|---|
| RBR40NS30ATL |  |
40 A | 100 A | 600 uA | 520 mV | 30 V | 30 V | + 150 C |
| RBR40NS40ATL | |
40 A | 100 A | 430 uA | 550 mV | 40 V | 40 V | + 150 C |
| RBR40NS60ATL | |
40 A | 100 A | 800 uA | 600 mV | 60 V | 60 V | + 150 C |
Paskelbta: 2025-07-22
| Atnaujinta: 2025-08-04