Qorvo QPD2160D 1600µm Discrete GaAs pHEMT
Qorvo QPD2160D 1600µm Discrete GaAs pHEMT (Pseudomorphic High-Electron-Mobility-Transistor) features a DC to 20GHz operating frequency. The QPD2160D typically provides 32.5dBm of output power at P1dB with a gain of 10.4dB and 63% power-added efficiency at 1dB compression. This performance makes the QPD2160D appropriate for high-efficiency applications.
The QPD2160D is designed using a 0.25µm power pHEMT production process. This process features advanced techniques to optimize microwave power and efficiency at high drain bias operating conditions.
The Qorvo QPD2160D GaAs pHEMT is offered in a 0.41mm x 0.54mm x 0.10mm bare die. The device features a protective overcoat layer with silicon nitride providing high environmental robustness and scratch protection.
Features
- DC to 20GHz frequency range
- 32.5dBm typical output power P1dB
- 10.4dB typical gain at 12GHz
- 63% typical PAE at 12GHz
- 1dB typical noise factor at 12GHz
- 8V drain voltage
- 258mA drain current
- 0.25µm GaAs pHEMT technology
- 0.41mm x 0.54mm x 0.10mm bare die
- Halogen-free, lead-free, and RoHS compliant
Applications
- Communications
- Radar
- Point-to-point radio
- Satellite communications
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