Qorvo QPA2575 Ka-Band Power Amplifier
Qorvo QPA2575 Ka-Band Power Amplifier operates from 32GHz to 38GHz, providing 3W of saturated power with 16% power-added efficiency and 19dB small-signal gain. To simplify system integration, the QPA2575 is fully matched to 50Ω, with integrated DC blocking caps on both I/O ports. Fabricated on the Qorvo QPHT15 0.15µm power pHEMT (Pseudomorphic High-Electron-Mobility Transistor) process, the QPA2575 is ideally suited to support both commercial and defense-related applications. This device is 100% DC and RF tested on-wafer to ensure compliance with performance specifications.
The Qorvo QPA2575 Ka-Band Power Amplifier is offered in a compact 7.0mm x 8.0mm x 1.465mm SMD/SMT package with a -40°C to +85°C operating temperature range.
Features
- 32GHz to 38GHz frequency range
- 35dBm output power at saturation, PSAT
- 16% power added efficiency PAE
- 19dB small signal gain
- 12dB return loss
- Bias pulsed VD = +6V, IDQ = 2.1A
- -40°C to +85°C operating temperature range
- 7.0mm x 8.0mm x 1.465mm SMD/SMT package
Applications
- Radar
- Satellite communications
Development Tools
Qorvo QPA2575EVB Evaluation Board
Demonstration and development platform for the QPA2575 3W Ka-Band Power Amplifier.
Block Diagram
Paskelbta: 2021-01-11
| Atnaujinta: 2022-03-11