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onsemi Silicon Carbide Schottky Diodes

onsemi Silicon Carbide (SiC) Schottky Diodes provide superior switching performance and higher reliability to silicon-based devices. SiC Schottky Diodes feature no reverse recovery current, temperature-independent switching, and excellent thermal performance. System benefits include high efficiency, fast operating frequency, high power density, low EMI, and reduced system size and cost.  onsemi offers 650V and 1200V devices in a range of current and package options, ideal for next-generation power system designs.

Features

  • No reverse QRRrecovery
  • No forward recovery
  • Low VF (lower conduction losses)
  • Leakage stability over temperature range
  • Switching characteristics independent of temperature
  • Higher surge and avalanche capacity
  • Positive temperature coefficient
  • Higher operating temperature (TJMAX=175ºC)

Applications

  • Solar Photo-Voltaic Inverters (PV)
  • Power Factor Correctors (PFC)
  • Electric and Hybrid Vehicle Chargers
  • Power Distribution
  • Uninterruptible Power Supplies (UPS)
  • Telecom and Server Power Supplies

Schottky Diode Series

onsemi FFSP SiC Schottky Diodes

Silicon Carbide devices in an industry standard TO-220-2L package.

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onsemi FFSH SiC Schottky Diodes

Silicon Carbide devices in an industry standard TO-247 package.

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onsemi Silicon Carbide Schottky Diodes
Paskelbta: 2018-04-24 | Atnaujinta: 2022-10-20