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onsemi NVTFWS002N04XM MOSFET

onsemi NVTFWS002N04XM MOSFET features a low RDS(on) and capacitance in an AEC-Q101 qualified package. The MOSFET has a 40V drain-to-source voltage, 114A continuous drain current, and 2.45m at 10V drain-to-source resistance. The onsemi NVTFWS002N04XM MOSFET is available in a µ8FL 3.3mm x 3.3mm small footprint package and is ideal for motor drive, battery protection, and synchronous rectification applications.

Features

  • Low RDS(on) to minimize conduction losses
  • Low capacitance to minimize driver losses
  • Small footprint (3.3mm x 3.3mm) with compact design
  • AEC-Q101 qualified and PPAP capable
  • Pb-free, Halogen-free/BFR-free, and RoHS-compliant

Applications

  • Motor drive
  • Battery protection
  • Synchronous rectification

Specifications

  • 40V drain-to-source voltage
  • 2.45m at 10V drain-to-source on resistance
  • 114A continuous drain current

Transient Thermal Response

Performance Graph - onsemi NVTFWS002N04XM MOSFET

Package Style

Application Circuit Diagram - onsemi NVTFWS002N04XM MOSFET
Paskelbta: 2025-04-10 | Atnaujinta: 2025-04-17