onsemi NVMFS5C645N Single N-Channel Power MOSFETs
onsemi NVMFS5C645N Single N-Channel Power MOSFETs features a 92A continuous drain current, 4.6mΩ at 10V RDS(ON), and 60V drain-to-source voltage. The NVMFS5C645N is available in a 5mm x 6mm flat lead package developed for compact and efficient designs. The onsemi AEC-Q101 qualified MOSFET is PPAP-capable and ideal for automotive applications.
Features
- Small footprint (5mm x 6mm) for compact design
- Low RDS(on) to minimize conduction losses
- Low QG and capacitance to minimize driver losses
- AEC-Q101-qualified and PPAP-capable
- NVMFS5C645NWF - wettable flank option for enhanced optical inspection
- Pb-free and RoHS-compliant
Applications
- Reverse battery protection
- Switching power supplies
- Power switches (high-side driver, low-side driver, H-bridges, etc)
Specifications
- 92A maximum continuous drain current
- 4.6mΩ at 10V RDS(ON) maximum
- 60V Drain-to-Source voltage
- ±20V Gate-to-Source voltage
- 820A pulsed drain current
- -55°C to +175°C operating junction and storage temperature range
Associated Products
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Produced using an advanced Power Trench process that incorporates Shielded Gate technology.
Typical Application
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onsemi N-Channel 40V & 60V Automotive Power MOSFETs
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Paskelbta: 2024-01-03
| Atnaujinta: 2025-11-11